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1. 发明授权

US5690893A Analyzer having sensor with memory device 失效
标题翻译：分析仪具有带存储器件的传感器
公开(公告)号：US5690893A
公开(公告)日：1997-11-25
申请号：US461160
申请日：1995-06-05
申请人： Satoshi Ozawa , Takafumi Kikuchi , Yoshiki Murakami , Masaaki Nakai , Koutarou Yamashita , Toshiko Fujii , Yuji Miyahara , Yoshio Watanabe
发明人： Satoshi Ozawa , Takafumi Kikuchi , Yoshiki Murakami , Masaaki Nakai , Koutarou Yamashita , Toshiko Fujii , Yuji Miyahara , Yoshio Watanabe
IPC分类号： G01N35/00 , G01N27/333
CPC分类号： G01N35/00732 , G01N2035/00683 , G01N2035/00782 , G01N35/00663 , Y10T436/11 , Y10T436/115831 , Y10T436/2575
摘要： An analyzer includes an exchangeable and consumable element such as a sensor, column or reagent the characteristic of which specifies an analyzing condition. The element is provided with a non-volatile semiconductor memory which holds an analyzing condition adapted for the element as data. When the element is mounted on an analyzer body, a controller of the analyzer reads the analyzing condition from the memory to update an analyzing condition inherently provided in the analyzer body. The result of analysis and/or operational history information of use of the element may be written into the memory with which the element is provided.
摘要翻译：分析仪包括可交换和可消耗元件，例如传感器，色谱柱或试剂，其特性指定分析条件。该元件设置有非易失性半导体存储器，其将适合该元件的分析条件保持为数据。当元件安装在分析器本体上时，分析器的控制器从存储器读取分析条件，以更新分析器主体中固有地提供的分析条件。可以将元素的使用的分析和/或操作历史信息的结果写入到提供元件的存储器中。

2. 发明授权

US07897509B2 Semiconductor wafer and method of manufacturing the same and method of manufacturing semiconductor device 有权
标题翻译：半导体晶片及其制造方法以及制造半导体器件的方法
公开(公告)号：US07897509B2
公开(公告)日：2011-03-01
申请号：US12823913
申请日：2010-06-25
申请人： Naotaka Tanaka , Kenji Kanemitsu , Takafumi Kikuchi , Takashi Akazawa
发明人： Naotaka Tanaka , Kenji Kanemitsu , Takafumi Kikuchi , Takashi Akazawa
IPC分类号： H01L21/4763
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/90 , H01L2224/0554 , H01L2224/05556 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13144 , H01L2224/16237 , H01L2224/81141 , H01L2224/81191 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/30107 , H01L2224/13099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.
摘要翻译：一种半导体晶片，包括：在形成晶片的通孔电极的位置处形成的管状沟槽; 绝缘构件，其被埋置在所述沟槽内部和所述沟槽的上表面上; 形成在所述绝缘构件的上表面上的栅电极膜和金属膜; 形成在金属膜的上表面上的多层柱状布线孔; 以及通过多层柱状布线通孔与金属膜电连接形成的外部连接电极。以这种方式，在薄晶片和设备开发之后，不需要具有干法蚀刻的新工艺来形成通孔电极。此外，引入特定设计可以形成通孔电极，同时显着降低了各个工艺的难度。

3. 发明申请

US20090189268A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090189268A1
公开(公告)日：2009-07-30
申请号：US12419357
申请日：2009-04-07
申请人： Yoshiyuki KADO , Takahiro Naito , Hikaru Ikegami , Takafumi Kikuchi , Toshihiko Sato
发明人： Yoshiyuki KADO , Takahiro Naito , Hikaru Ikegami , Takafumi Kikuchi , Toshihiko Sato
IPC分类号： H01L23/498
CPC分类号： H01L24/14 , H01L23/28 , H01L23/3128 , H01L23/50 , H01L23/5386 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L25/0652 , H01L25/18 , H01L2224/1134 , H01L2224/13144 , H01L2224/16 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/97 , H01L2225/06558 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/15173 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/20752 , H01L2924/30105 , H01L2924/00014 , H01L2224/85 , H01L2224/81 , H01L2224/83 , H01L2224/92247 , H01L2224/13099 , H01L2924/00 , H01L2924/00012 , H01L2924/00011
摘要： Of three chips (2A), (2B), and (2C) mounted on a main surface of a package substrate (1) in a multi-chip module (MCM), a chip (2A) with a DRAM formed thereon and a chip (2B) with a flash memory formed thereon are electrically connected to wiring lines (5) of the package substrate (1) through Au bumps (4), and a gap formed between main surfaces (lower surfaces) of the chips (2A), (2B) and a main surface of the package substrate (1) is filled with an under-fill resin (6). A chip (2C) with a high-speed microprocessor formed thereon is mounted over the two chips (2A) and (2B) and is electrically connected to bonding pads (9) of the package substrate (1) through Au wires (8).
摘要翻译：在多芯片模块（MCM）中安装在封装基板（1）的主表面上的三个芯片（2A），（2B）和（2C）中，形成有DRAM的芯片（2A）和芯片（2B），其上形成有闪速存储器，通过Au凸块（4）与封装基板（1）的布线（5）电连接，并且在芯片（2A）的主表面（下表面）之间形成间隙，（2B）和封装基板（1）的主表面填充有未填充树脂（6）。其上形成有高速微处理器的芯片（2C）安装在两个芯片（2A）和（2B）上，并且通过Au导线（8）电连接到封装衬底（1）的焊盘（9）。

4. 发明授权

US07559090B2 Memory, information apparatus for access to the memory, and method for the information apparatus 有权
标题翻译：存储器，用于访问存储器的信息装置，以及信息装置的方法
公开(公告)号：US07559090B2
公开(公告)日：2009-07-07
申请号：US10527820
申请日：2004-07-15
申请人： Yoshihiko Takagi , Takafumi Kikuchi
发明人： Yoshihiko Takagi , Takafumi Kikuchi
IPC分类号： G06F7/04 , G06F17/30 , G06K9/00 , H04L9/00 , H04L9/32
CPC分类号： G07F7/1008 , G06F21/62 , G06F21/78 , G06Q20/341 , G06Q20/357 , G06Q20/4097
摘要： With commands from a terminal divided into a command to designate an access area and a command to gain access, the terminal adds verification data of the terminal to an argument of the command to gain access, and it is thereby possible to verify the identity of a terminal application that issues the command to designate an access area, a terminal application that issues the command to gain access, and a terminal application that holds a verification key.
摘要翻译：通过将来自终端的命令分成指定访问区域的命令和获取访问命令，终端将终端的验证数据添加到命令的参数以获得访问，从而可以验证发出指定访问区域的命令的终端应用程序，发出访问命令的终端应用程序以及保存验证密钥的终端应用程序。

5. 发明授权

US07531441B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07531441B2
公开(公告)日：2009-05-12
申请号：US11399365
申请日：2006-04-07
申请人： Yoshiyuki Kado , Takahiro Naito , Toshihiko Sato , Hikaru Ikegami , Takafumi Kikuchi
发明人： Yoshiyuki Kado , Takahiro Naito , Toshihiko Sato , Hikaru Ikegami , Takafumi Kikuchi
IPC分类号： H01L21/44
CPC分类号： H01L24/14 , H01L23/28 , H01L23/3128 , H01L23/50 , H01L23/5386 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L25/0652 , H01L25/18 , H01L2224/1134 , H01L2224/13144 , H01L2224/16 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/97 , H01L2225/06558 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/15173 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/20752 , H01L2924/30105 , H01L2924/00014 , H01L2224/85 , H01L2224/81 , H01L2224/83 , H01L2224/92247 , H01L2224/13099 , H01L2924/00 , H01L2924/00012 , H01L2924/00011
摘要： Of three chips (2A), (2B), and (2C) mounted on a main surface of a package substrate (1) in a multi-chip module (MCM), a chip (2A) with a DRAM formed thereon and a chip (2B) with a flash memory formed thereon are electrically connected to wiring lines (5) of the package substrate (1) through Au bumps (4), and a gap formed between main surfaces (lower surfaces) of the chips (2A), (2B) and a main surface of the package substrate (1) is filled with an under-fill resin (6). A chip (2C) with a high-speed microprocessor formed thereon is mounted over the two chips (2A) and (2B) and is electrically connected to bonding pads (9) of the package substrate (1) through Au wires (8).
摘要翻译：在多芯片模块（MCM）中安装在封装基板（1）的主表面上的三个芯片（2A），（2B）和（2C）中，形成有DRAM的芯片（2A）和芯片（2B），其上形成有闪速存储器，通过Au凸块（4）与封装基板（1）的布线（5）电连接，并且在芯片（2A）的主表面（下表面）之间形成间隙，（2B）和封装基板（1）的主表面填充有未填充树脂（6）。其上形成有高速微处理器的芯片（2C）安装在两个芯片（2A）和（2B）上，并且通过Au导线（8）电连接到封装衬底（1）的焊盘（9）。

6. 发明授权

US07042073B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US07042073B2
公开(公告)日：2006-05-09
申请号：US10479785
申请日：2002-04-05
申请人： Yoshiyuki Kado , Takahiro Naito , Toshihiko Sato , Hikaru Ikegami , Takafumi Kikuchi
发明人： Yoshiyuki Kado , Takahiro Naito , Toshihiko Sato , Hikaru Ikegami , Takafumi Kikuchi
IPC分类号： H01L23/02
CPC分类号： H01L24/14 , H01L23/28 , H01L23/3128 , H01L23/50 , H01L23/5386 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/97 , H01L25/0652 , H01L25/18 , H01L2224/1134 , H01L2224/13144 , H01L2224/16 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/49171 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2224/97 , H01L2225/06558 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/15173 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/20752 , H01L2924/30105 , H01L2924/00014 , H01L2224/85 , H01L2224/81 , H01L2224/83 , H01L2224/92247 , H01L2224/13099 , H01L2924/00 , H01L2924/00012 , H01L2924/00011
摘要： Of three chips (2A), (2B), and (2C) mounted on a main surface of a package substrate (1) in a multi-chip module (MCM), a chip (2A) with a DRAM formed thereon and a chip (2B) with a flash memory formed thereon are electrically connected to wiring lines (5) of the package substrate (1) through Au bumps (4), and a gap formed between main surfaces (lower surfaces) of the chips (2A), (2B) and a main surface of the package substrate (1) is filled with an under-fill resin (6). A chip (2C) with a high-speed microprocessor formed thereon is mounted over the two chips (2A) and (2B) and is electrically connected to bonding pads (9) of the package substrate (1) through Au wires (8).

7. 发明授权

US5719646A Method of and apparatus for decoding coded moving picture and outputting same with suppressed error 失效
标题翻译：解码编码运动图像并以抑制误差输出的方法和装置
公开(公告)号：US5719646A
公开(公告)日：1998-02-17
申请号：US560018
申请日：1995-11-17
申请人： Takafumi Kikuchi , Tadashi Saitoh , Yutaka Okunoki
发明人： Takafumi Kikuchi , Tadashi Saitoh , Yutaka Okunoki
IPC分类号： H04N19/50 , G06T9/00 , H03M7/36 , H03M13/00 , H04N19/102 , H04N19/159 , H04N19/172 , H04N19/186 , H04N19/42 , H04N19/423 , H04N19/44 , H04N19/46 , H04N19/503 , H04N19/577 , H04N19/61 , H04N19/625 , H04N19/65 , H04N19/67 , H04N19/70 , H04N19/85 , H04N19/89 , H04N19/91 , H04N7/12
CPC分类号： H04N19/89
摘要： A train of coded input picture data carrying moving picture information includes at least one picture data which need to refer to another picture data and at least one coded picture data containing an error. Such a train of input picture data is decoded with the influence of the error minimized and outputted in predetermined order by using a method including the steps of (a) upon detection of an error in a first input picture data in the train of input picture data, skipping the first input picture data and succeeding input picture data without decoding them until a second input picture data which need to refer to no reference to another picture data for decoding appears, and outputting consecutively a third picture data inputted before the first input picture data and already decoded, (b) decoding the second input picture data and outputting the decoded picture data after the third decoded picture data outputted consecutively, and (c) skipping picture data succeeding said second input picture data without decoding them until a fourth input picture data which need to refer to no reference to another picture data for decoding or a fourth input picture data which need to refer to the second decoded picture data for decoding appears, and outputting consecutively a picture data obtained by decoding the second input picture data.
摘要翻译：携带运动图像信息的编码输入图像数据串包括需要参考另一图像数据的至少一个图像数据和包含误差的至少一个编码图像数据。这样的输入图像数据序列以最小化的误差的影响被解码，并以预定顺序输出，通过使用包括以下步骤的方法进行解码：（a）在检测到输入图像数据的列中的第一输入图像数据中的错误时跳过第一输入图像数据和后续输入图像数据，而不对它们进行解码，直到出现需要参考不参考另一图像数据的第二输入图像数据，并连续输出在第一输入图像数据之前输入的第三图像数据（b）对第二输入图像数据进行解码，并输出连续输出的第三解码图像数据之后的解码图像数据，（c）跳过第二输入图像数据后的图像数据，而不进行解码，直到第四输入图像数据它们不需要参考用于解码的另一图像数据或需要参考第二个的第四输入图像数据出现用于解码的解码图像数据，并连续输出通过解码第二输入图像数据而获得的图像数据。

8. 发明申请

US20110133336A1 Semiconductor Wafer and Method of Manufacturing the Same and Method of Manufacturing Semiconductor Device 审中-公开
标题翻译：半导体晶片及其制造方法及制造半导体器件的方法
公开(公告)号：US20110133336A1
公开(公告)日：2011-06-09
申请号：US13030098
申请日：2011-02-17
申请人： Naotaka Tanaka , Kenji Kanemitsu , Takafumi Kikuchi , Takashi Akazawa
发明人： Naotaka Tanaka , Kenji Kanemitsu , Takafumi Kikuchi , Takashi Akazawa
IPC分类号： H01L23/538 , H01L21/768
CPC分类号： H01L21/76898 , H01L23/481 , H01L24/11 , H01L24/13 , H01L24/90 , H01L2224/0554 , H01L2224/05556 , H01L2224/05567 , H01L2224/05573 , H01L2224/05624 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/13144 , H01L2224/16237 , H01L2224/81141 , H01L2224/81191 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/30107 , H01L2224/13099 , H01L2924/00 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A semiconductor wafer comprising: a tubular trench formed at a position to form a through-hole electrode of a wafer; an insulating member buried inside the trench and on an upper surface of the trench; a gate electrode film and a metal film formed on an upper surface of the insulating member; a multilevel columnar wiring via formed on an upper surface of the metal film; and an external connection electrode formed electrically connected to the metal film via the multilevel columnar wiring via. In this manner, it is unnecessary to have a new process of dry etching to form a through-hole electrode after thinning the wafer and equipment development. Moreover, introduction of a specific design enables formation of through-hole electrodes with significantly reduced difficulties of respective processes.
摘要翻译：一种半导体晶片，包括：在形成晶片的通孔电极的位置处形成的管状沟槽; 绝缘构件，其被埋置在所述沟槽内部和所述沟槽的上表面上; 形成在所述绝缘构件的上表面上的栅电极膜和金属膜; 形成在金属膜的上表面上的多层柱状布线孔; 以及通过多层柱状布线通孔与金属膜电连接形成的外部连接电极。以这种方式，在薄晶片和设备开发之后，不需要具有干法蚀刻的新工艺来形成通孔电极。此外，引入特定设计可以形成通孔电极，同时显着降低了各个工艺的难度。

9. 发明授权

US07355272B2 Semiconductor device with stacked semiconductor chips of the same type 有权
标题翻译：具有相同类型的堆叠半导体芯片的半导体器件
公开(公告)号：US07355272B2
公开(公告)日：2008-04-08
申请号：US11049993
申请日：2005-02-04
申请人： Hiroshi Kuroda , Noriaki Sakamoto , Takafumi Kikuchi
发明人： Hiroshi Kuroda , Noriaki Sakamoto , Takafumi Kikuchi
IPC分类号： H01L23/48 , H01L23/495 , H01L23/12 , H01L25/065 , H01L25/07
CPC分类号： H01L24/06 , H01L23/49816 , H01L23/5386 , H01L24/48 , H01L25/0657 , H01L2223/5442 , H01L2223/54473 , H01L2224/0401 , H01L2224/05554 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48227 , H01L2224/73204 , H01L2225/0651 , H01L2225/06517 , H01L2225/06555 , H01L2225/06562 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01055 , H01L2924/01056 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10161 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes a wiring board, a first semiconductor chip (e.g. DRAM) that is flip-chip connected on the wiring board, a second semiconductor chip (e.g. DRAM) that is of the same type as the first semiconductor chip and is mounted face up on the first semiconductor chip such that the orientation of the arrangement of the pads is at 90° from that of the first semiconductor chip, a third semiconductor chip (e.g. microcomputer chip) disposed on the second semiconductor chip, wires, and a sealing medium. The wiring board has a plurality of common wiring patterns for electrically connecting first electrodes for the first semiconductor chip and second electrodes for the second semiconductor chip. The common wiring patterns can be disposed without crossing on the surface wire layer of the wiring board.
摘要翻译：半导体器件包括布线板，倒装芯片连接在布线板上的第一半导体芯片（例如DRAM），与第一半导体芯片具有相同类型的第二半导体芯片（例如DRAM）使得第一半导体芯片的布置方向与第一半导体芯片的取向成90°，设置在第二半导体芯片上的第三半导体芯片（例如微计算机芯片），导线和密封介质。布线板具有用于电连接第一半导体芯片的第一电极和第二半导体芯片的第二电极的多个公共布线图案。公共布线图案可以布置成不与布线板的表面布线层交叉。

10. 发明申请

US20060206343A1 Information storage device and information processing device 审中-公开
标题翻译：信息存储装置和信息处理装置
公开(公告)号：US20060206343A1
公开(公告)日：2006-09-14
申请号：US10567878
申请日：2004-09-08
申请人： Yoshiaki Nakanishi , Takafumi Kikuchi , Yoshihiko Takagi
发明人： Yoshiaki Nakanishi , Takafumi Kikuchi , Yoshihiko Takagi
IPC分类号： G06Q99/00
CPC分类号： G06K19/07769 , G06K7/10297 , G06K19/07
摘要： The present application is to make an information storage device (card) with a plurality of communication functions perform a process by one of the communication functions in cooperation with another process performed by the other communication function. A card 30 includes contactless communication means and contact communication means so as to execute only one of a process using contactless communication and a process using contact communication at one and the same time. The card 30 further includes processing means 33 and status change means 31. The processing means 33 executes processes by contactless communication and contact communication. The status change means 31 gives a response, in terms of an execution status of a contactless communication process, when the status change means 31 receives a check request command for inquiring a condition of the contactless communication process from a card supervision portion 12 through the contact communication means. The status change means 31 sends the processing means 33 an instruction to change the process of the processing means 33 to a contact communication process if the processing means 33 is not engaging in execution of the contactless communication process when the status change means 31 receives a change request command for giving an instruction to change the process of the processing means 33 to the contact communication process from the card supervision portion 12. It is therefore possible to make the card perform the process by contact communication in cooperation with the process using contactless communication.
摘要翻译：本申请是使具有多个通信功能的信息存储装置（卡）与由另一通信功能执行的另一处理协同执行通信功能之一的处理。卡30包括非接触式通信装置和接触通信装置，以便仅使用非接触式通信的处理和使用接触通信的处理同时执行其中之一。卡30还包括处理装置33和状态改变装置31.处理装置33通过非接触式通信和接触通信来执行处理。当状态改变装置31通过联系人从卡监督部分12接收到用于询问非接触式通信处理的状况的检查请求命令时，状态改变装置31给出关于非接触式通信处理的执行状态的响应沟通方式。如果处理装置33在状态改变装置31接收到改变时处理装置33没有参与无接触通信处理的执行，则状态改变装置31向处理装置33发送改变处理装置33的处理的指令到接触通信处理请求命令，用于给出将处理装置33的处理改变为来自卡监视部分12的联系通信处理的指令。因此，可以通过与使用非接触式通信的处理协作的联系通信来使卡执行该处理。

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