专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5652079A Carrier for dry two-component developer and method of producing the same 失效
标题翻译：用于干燥双组分显影剂的载体及其制备方法
公开(公告)号：US5652079A
公开(公告)日：1997-07-29
申请号：US568429
申请日：1995-12-06
申请人： Satoshi Mochizuki , Fumihiro Sasaki , Hidefumi Gohhara , Norio Yokoyama , Yutaka Sakai , Takahisa Kato , Tohru Suganuma , Susumu Kawakami , Hironori Hata
发明人： Satoshi Mochizuki , Fumihiro Sasaki , Hidefumi Gohhara , Norio Yokoyama , Yutaka Sakai , Takahisa Kato , Tohru Suganuma , Susumu Kawakami , Hironori Hata
IPC分类号： G03G9/113
CPC分类号： G03G9/1136
摘要： A carrier for a dry two-component developer, includes a core material and a silicone-modified acrylic resin layer coated on the surface of the core material, the silicone-modified acrylic resin layer including a silicone-modified acrylic resin, with the ratio of the percentage transmission of infrared spectrum Si--O stretching vibrations (T.sub.Si) of the silicone-modified acrylic resin layer to the percentage transmission of infrared spectrum C.dbd.O stretching vibrations (T.sub.C) thereof, T.sub.Si /T.sub.C, being at least 1.0. The silicone-modified acrylic resin layer can be made from a water-soluble synthetic resin solution containing a silicone macromonomer (A) with a vinyl group being introduced into one terminal thereof, and a vinyl monomer (B) which is copolymerizable with the silicone macromonomer (A), with the molecular weight of the silicone macromonomer (A) of the silicone-modified acrylic resin being in the range of 1,000 to 10,000. Methods of producing such carriers are provided.
摘要翻译：用于干燥双组分显影剂的载体包括芯材和涂覆在芯材表面上的硅氧烷改性丙烯酸树脂层，硅氧烷改性丙烯酸树脂层包含硅氧烷改性的丙烯酸树脂，其比例为硅氧烷改性丙烯酸树脂层的红外光谱Si-O伸缩振动（TSi）与红外光谱C = O伸缩振动（TC），TSi / TC的透射率百分比透射百分比至少为1.0。硅氧烷改性的丙烯酸树脂层可以由含有乙烯基的硅氧烷大分子单体（A）的一个末端的水溶性合成树脂溶液和与硅氧烷大分子单体共聚的乙烯基单体（B）（A），硅氧烷改性丙烯酸树脂的硅氧烷大分子单体（A）的分子量在1,000〜10,000的范围内。提供制造这种载体的方法。

2. 发明授权

US06440572B1 Composition, antisticking agents, and thermal transfer recording films 有权
标题翻译：组合物，抗粘剂和热转印记录膜
公开(公告)号：US06440572B1
公开(公告)日：2002-08-27
申请号：US09403852
申请日：1999-10-25
申请人： Norio Yokoyama , Hironori Hata
发明人： Norio Yokoyama , Hironori Hata
IPC分类号： B32B904
CPC分类号： B41M5/443 , B41M5/44 , B41M5/52 , B41M5/5254 , C09D183/04 , Y10T428/31663 , C08L2666/26 , C08L2666/04 , C08L2666/14
摘要： The object of the present invention is to prevent the sticking of the heat sensitive transfer recording film without generating head refuse and further to prevent transfer obstruction. More particlarly, the present invention provides a compound comprising a polydimethylsiloxane copolymer and one or more synthetic resin(s) selected from a group consisting of polyvinyl acetate derivatives, polyamide, acrylic resin, epoxy resin, unsaturated polyester resin and precursor of unsaturated polyester and/or cellulose derivatives; and sticking proof agents containing said compound; and a heat sensitive transfer film having a sticking proof layer formed by using the agents.
摘要翻译：本发明的目的是防止热敏转印记录膜的粘附而不产生头部垃圾，并且进一步防止转印阻塞。更具体地，本发明提供一种包含聚二甲基硅氧烷共聚物和一种或多种选自聚乙酸乙烯酯衍生物，聚酰胺，丙烯酸树脂，环氧树脂，不饱和聚酯树脂和不饱和聚酯前体的合成树脂和/ 或纤维素衍生物; 和含有所述化合物的防粘剂; 以及具有通过使用这些试剂形成的防粘层的热敏转印膜。

3. 发明申请

US20070180953A1 HIGH PURITY COBALT, METHOD OF MANUFACTURING THEREOF, AND HIGH PURITY COBALT TARGETS 有权
标题翻译：高纯度钴，其制造方法和高纯度钴钴靶
公开(公告)号：US20070180953A1
公开(公告)日：2007-08-09
申请号：US10803506
申请日：2004-03-17
申请人： Masahito Uchikoshi , Norio Yokoyama , Tamas Kekesi , Minoru Isshiki
发明人： Masahito Uchikoshi , Norio Yokoyama , Tamas Kekesi , Minoru Isshiki
IPC分类号： B22F9/24 , C22B23/00
CPC分类号： C22B23/0423 , C22B3/42 , C22B23/0461 , Y02P10/234
摘要： High purity cobalt with a very few content of impurities such as copper, a method of manufacturing thereof, and high purity cobalt targets are provided. The cobalt containing impurities such as copper is dissolved in a hydrochloric acid solution, and the concentration of the hydrochloric acid of the aqueous solution of cobalt chloride is adjusted to 0.1 kmol/m3 to 3 kmol/m3. Then, cobalt is added in the aqueous solution of cobalt chloride, and an inert gas is injected into the solution with agitating, in order to convert the divalent copper ions contained in the aqueous solution of cobalt chloride to monovalent copper ions. Then, the aqueous solution of cobalt chloride is fed into a column filled up with the anion exchange resins. Cobalt is not absorbed on the anion exchange resins although the monovalent copper ions are absorbed on the anion exchange resins. Therefore, copper can be separated from the aqueous solution of cobalt chloride. And then, the aqueous solution of cobalt chloride is evaporated to dryness and heated to 623 K to 873 K in a hydrogen atmosphere to generate cobalt.
摘要翻译：提供了非常少量杂质如铜的高纯度钴，其制造方法和高纯度钴靶。将含钴杂质如铜溶解在盐酸溶液中，氯化钴水溶液的盐酸浓度调节至0.1kmol / m 3至3kmol / m 3， SUP> 3 。然后，将钴加入到氯化钴水溶液中，并将惰性气体搅拌注入溶液中，以将氯化钴水溶液中所含的二价铜离子转化为一价铜离子。然后，将氯化钴水溶液加入填充有阴离子交换树脂的柱中。尽管单价铜离子被吸收在阴离子交换树脂上，但是钴不会吸收在阴离子交换树脂上。因此，可以从氯化钴水溶液中分离出铜。然后，将氯化钴水溶液蒸发至干，并在氢气氛中加热至623K至873K，以产生钴。

4. 发明申请

US20070082147A1 Heat-resistant lubricity imparting coating agent, and thermal transfer recording medium 审中-公开
标题翻译：耐热润滑性赋予涂层剂和热转印记录介质
公开(公告)号：US20070082147A1
公开(公告)日：2007-04-12
申请号：US10578666
申请日：2005-01-24
申请人： Shigekazu Teranishi , Norio Yokoyama
发明人： Shigekazu Teranishi , Norio Yokoyama
IPC分类号： B41M5/40
CPC分类号： B41M5/40 , B41M5/443 , B41M2205/32 , C08F283/12 , C08F293/005 , C08G77/442 , C08L51/085 , C08L53/00 , C09D151/085 , C09D153/00 , C09D183/04 , C09D183/10 , C08L2666/02
摘要： To provide a heat-resistant lubricity imparting coating agent that can form a heat-resistant lubricous protective layer with good heat resistance and lubricity which will hardly cause chips due to contact with the thermal head, and which will hardly allow the chips to stick to and be fusion-bonded to the head, and a thermal transfer recording medium having the heat-resistant lubricous protective layer. The heat-resistant lubricity imparting coating agent of the invention contains a polydimethylsiloxane copolymer which includes a long chain alkyl group having a carbon number of 12 or more.
摘要翻译：为了提供耐热润滑性赋予涂层剂，能够形成具有良好的耐热性和润滑性的耐热润滑保护层，这几乎不会与热敏头接触而导致芯片，并且几乎不能使芯片粘附到与头部熔合，以及具有耐热润滑保护层的热转印记录介质。本发明的耐热润滑性赋予剂含有包含碳数为12以上的长链烷基的聚二甲基硅氧烷共聚物。

5. 发明申请

US20090039997A1 Metal Terminal, Coil Component, and Method for Holding and Fixing Conductive Wire 审中-公开
标题翻译：金属端子，线圈部件和保持和固定导电线的方法
公开(公告)号：US20090039997A1
公开(公告)日：2009-02-12
申请号：US12282639
申请日：2007-02-22
申请人： Hideoki Nakashima , Koji Niino , Kenji Takano , Norio Yokoyama
发明人： Hideoki Nakashima , Koji Niino , Kenji Takano , Norio Yokoyama
IPC分类号： H01F27/29 , H01R4/10 , H01R4/18
CPC分类号： H01F5/04 , H01F41/076 , H01F41/10 , H01R4/14 , H01R4/18
摘要： The present invention provides a metal terminal that can hold and fix a conductive wire thereto without excessive deformation. In the metal terminal of this invention, a predetermined relationship is set between a length in the lengthwise direction and a width in the widthwise direction of a conductive wire winding portion and a diameter of the conductive wire wound around the conductive wire winding portion to reduce force applied to the conductive wire when holding and fixing the conductive wire.
摘要翻译：本发明提供一种金属端子，其能够将导电线保持固定而不会过度变形。在本发明的金属端子中，在导线绕组部分的长度方向的长度和宽度方向的宽度以及缠绕在导线绕组部分上的导线的直径之间设定预定的关系以减小力当保持和固定导线时，施加到导线上。

6. 发明授权

US06740290B2 High purity cobalt, method of manufacturing thereof, and high purity cobalt targets 有权
标题翻译：高纯钴，其制造方法和高纯度钴靶
公开(公告)号：US06740290B2
公开(公告)日：2004-05-25
申请号：US09966861
申请日：2001-09-28
申请人： Masahito Uchikoshi , Norio Yokoyama , Tamas Kekesi , Minoru Isshiki
发明人： Masahito Uchikoshi , Norio Yokoyama , Tamas Kekesi , Minoru Isshiki
IPC分类号： C22C1907
CPC分类号： C22B23/0423 , C22B3/42 , C22B23/0461 , Y02P10/234
摘要： High purity cobalt with a very few content of impurities such as copper, a method of manufacturing thereof, and high purity cobalt targets are provided. The cobalt containing impurities such as copper is dissolved in a hydrochloric acid solution, and the concentration of the hydrochloric acid of the aqueous solution of cobalt chloride is adjusted to 0.1 kmol/m3 to 3 kmol/m3. Then, cobalt is added in the aqueous solution of cobalt chloride, and an inert gas is injected into the solution with agitating, in order to convert the divalent copper ions contained in the aqueous solution of cobalt chloride to monovalent copper ions. Then, the aqueous solution of cobalt chloride is fed into a column filled up with the anion exchange resins. Cobalt is not absorbed on the anion exchange resins although the monovalent copper ions are absorbed on the anion exchange resins. Therefore, copper can be separated from the aqueous solution of cobalt chloride. And then, the aqueous solution of cobalt chloride is evaporated to dryness and heated to 623 K to 873 K in a hydrogen atmosphere to generate cobalt.
摘要翻译：提供了非常少量杂质如铜的高纯度钴，其制造方法和高纯度钴靶。将含钴杂质如铜溶解在盐酸溶液中，氯化钴水溶液的盐酸浓度调节至0.1kmol / m 3至3kmol / m 3。然后，将钴加入到氯化钴水溶液中，并将惰性气体搅拌注入溶液中，以将氯化钴水溶液中所含的二价铜离子转化为一价铜离子。然后，将氯化钴水溶液加入填充有阴离子交换树脂的柱中。尽管单价铜离子被吸收在阴离子交换树脂上，但是钴不会吸收在阴离子交换树脂上。因此，可以从氯化钴水溶液中分离出铜。然后，将氯化钴水溶液蒸发至干，并在氢气氛中加热至623K至873K，以产生钴。

7. 发明授权

US06409965B1 Sputtering target and its manufacturing method 有权
标题翻译：溅射靶及其制造方法
公开(公告)号：US06409965B1
公开(公告)日：2002-06-25
申请号：US09666241
申请日：2000-09-21
申请人： Takahiro Nagata , Manabu Sasaki , Hitoshi Kimura , Norio Yokoyama
发明人： Takahiro Nagata , Manabu Sasaki , Hitoshi Kimura , Norio Yokoyama
IPC分类号： C22C3200
CPC分类号： C23C14/3414
摘要： An ingot is made from a used target of 30 weight % or more, and new metals of the same components, and recycled alloy powder is made by a gas atomizing process. Magnetic permeability is controlled not to exceed 2 by adjusting the content of rare earth metals in rare earth alloy powder to be at least 35 weight %. By blending the recycled alloy powder with other powder to produce alloy powder containing at least 50 weight % of rare earth alloy powder having a magnetic permeability not higher than 2 and containing at least 65 weight % of rare earth alloy powder. By sintering the alloy powder under pressure and thereafter cutting top, bottom and side surfaces of the sintered material, a target having a magnetic permeability not higher than 2 and having a thickness not less than 8 mm is fabricated.
摘要翻译：铸锭由30重量％以上的使用靶材制成，相同成分的新金属，再生合金粉末由气体雾化法制成。通过将稀土类合金粉末中的稀土金属的含量调整至少35重量％，将磁导率控制在2以下。通过将再循环合金粉末与其它粉末混合，制造含有至少50重量％的磁导率不高于2的稀土合金粉末并含有至少65重量％的稀土合金粉末的合金粉末。通过在压力下烧结合金粉末，然后切割烧结材料的顶部，底部和侧面，制造具有不高于2的磁导率并且厚度不小于8mm的靶。

8. 发明授权

US6024852A Sputtering target and production method thereof 失效
标题翻译：溅射靶材及其制备方法
公开(公告)号：US6024852A
公开(公告)日：2000-02-15
申请号：US984132
申请日：1997-12-03
申请人： Hidemasa Tamura , Norio Yokoyama , Eiichi Shimizu , Fumio Sasaki
发明人： Hidemasa Tamura , Norio Yokoyama , Eiichi Shimizu , Fumio Sasaki
IPC分类号： C22C14/00 , C23C14/34 , C23C14/00
CPC分类号： C22C14/00 , C23C14/3407
摘要： The present invention provides a sputtering target which generates a reduced quantity of particles during a sputtering and a method for producing such a sputtering target.Mirror treatment is carried out to a sputter surface 2 which is sputtered when forming a thin film, so that the sputter surface 2 has an arithmetic mean roughness Ra of 0.01 .mu.m or below. A sputtering target 1 with such a smooth sputter surface 2 having a small surface roughness enables to reduce a number of particles generated during a sputtering.
摘要翻译：本发明提供溅射时产生粒子减少的溅射靶，以及溅射靶的制造方法。对溅射表面2进行镜面处理，溅射表面2在形成薄膜时溅射，使得溅射表面2具有0.01μm或更小的算术平均粗糙度Ra。具有这种具有小表面粗糙度的光滑溅射表面2的溅射靶1能够减少在溅射期间产生的颗粒数量。

9. 发明授权

US07279024B2 High purity cobalt, method of manufacturing thereof, and high purity cobalt targets 有权
标题翻译：高纯钴，其制造方法和高纯度钴靶
公开(公告)号：US07279024B2
公开(公告)日：2007-10-09
申请号：US10803506
申请日：2004-03-17
申请人： Masahito Uchikoshi , Norio Yokoyama , Tamas Kekesi , Minoru Isshiki
发明人： Masahito Uchikoshi , Norio Yokoyama , Tamas Kekesi , Minoru Isshiki
IPC分类号： C22B23/00
CPC分类号： C22B23/0423 , C22B3/42 , C22B23/0461 , Y02P10/234
摘要： High purity cobalt with a very few content of impurities such as copper, a method of manufacturing thereof, and high purity cobalt targets are provided. The cobalt containing impurities such as copper is dissolved in a hydrochloric acid solution, and the concentration of the hydrochloric acid of the aqueous solution of cobalt chloride is adjusted to 0.1 kmol/m3 to 3 kmol/m3. Then, cobalt is added in the aqueous solution of cobalt chloride, and an inert gas is injected into the solution with agitating, in order to convert the divalent copper ions contained in the aqueous solution of cobalt chloride to monovalent copper ions. Then, the aqueous solution of cobalt chloride is fed into a column filled up with the anion exchange resins. Cobalt is not absorbed on the anion exchange resins although the monovalent copper ions are absorbed on the anion exchange resins. Therefore, copper can be separated from the aqueous solution of cobalt chloride. And then, the aqueous solution of cobalt chloride is evaporated to dryness and heated to 623 K to 873 K in a hydrogen atmosphere to generate cobalt.
摘要翻译：提供了非常少量杂质如铜的高纯度钴，其制造方法和高纯度钴靶。将含钴杂质如铜溶解在盐酸溶液中，氯化钴水溶液的盐酸浓度调节至0.1kmol / m 3至3kmol / m 3， SUP> 3 。然后，将钴加入到氯化钴水溶液中，并将惰性气体搅拌注入溶液中，以将氯化钴水溶液中所含的二价铜离子转化为一价铜离子。然后，将氯化钴水溶液加入填充有阴离子交换树脂的柱中。尽管单价铜离子被吸收在阴离子交换树脂上，但是钴不会吸收在阴离子交换树脂上。因此，可以从氯化钴水溶液中分离出铜。然后，将氯化钴水溶液蒸发至干，并在氢气氛中加热至623K至873K，以产生钴。

10. 发明授权

US06391081B1 Metal purification method and metal refinement method 有权
标题翻译：金属净化方法和金属细化方法
公开(公告)号：US06391081B1
公开(公告)日：2002-05-21
申请号：US09533537
申请日：2000-03-23
申请人： Masahito Uchikoshi , Norio Yokoyama , Minoru Isshiki , Kouji Mimura
发明人： Masahito Uchikoshi , Norio Yokoyama , Minoru Isshiki , Kouji Mimura
IPC分类号： C22B905
CPC分类号： C22B4/005 , C22B9/226 , C22B23/06
摘要： A metal purification method and a metal refinement method in which metals of high purity can be easily refined and recovered without increasing the size of the purification and refining devices or complicating the operation. To this end, metals containing impurities are molten in a plasma arc containing active hydrogen to remove the impurities. If the metals contain ceramics inclusions, the metals are molten in a plasma arc containing active hydrogen and the ceramics inclusions are caused to float over the molten metal by exploiting the difference of density between the molten metal and the ceramics inclusions. The floating ceramics inclusions are decomposed and removed. For application to refining, the metal oxides are molten in a plasma arc containing active hydrogen so as to be reduced to metals.
摘要翻译：金属净化方法和金属精制方法，其中可以容易地精炼和回收高纯度的金属，而不增加净化和精制装置的尺寸或使操作变得复杂。为此，含有杂质的金属在含有活性氢的等离子弧中熔融以除去杂质。如果金属含有陶瓷夹杂物，则金属在含有活性氢的等离子体电弧中熔融，并且通过利用熔融金属和陶瓷夹杂物之间的密度差，使陶瓷夹杂物漂浮在熔融金属上。浮选的陶瓷夹杂物被分解和去除。为了应用于精炼，金属氧化物在含有活性氢的等离子体电弧中熔化，从而还原成金属。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式