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    • 1. 发明申请
    • INK-JET HEAD AND INK-JET RECORDING APPARATUS
    • 喷墨头和喷墨记录装置
    • US20120212545A1
    • 2012-08-23
    • US13396830
    • 2012-02-15
    • Satoshi MIZUKAMIMasaki KatoTakahiko KurodaYoshikazu AkiyamaKanshi Abe
    • Satoshi MIZUKAMIMasaki KatoTakahiko KurodaYoshikazu AkiyamaKanshi Abe
    • B41J2/14
    • B41J2/14233B41J2002/14491B41J2202/08
    • An ink-jet head includes a nozzle plate having nozzles, a vibrating plate on the nozzle plate, liquid chambers formed of spaces partitioned by division walls, a piezoelectric element having a common electrode, a piezoelectric body and an individual electrode layered in this order on a surface of the vibrating plate, a first insulator film having a first opening and a second insulator film having a second opening layered in this order on the first surface, a first wire drawn from the individual electrode via the first opening and the second opening, a third insulator film having a third opening on the first wire; and a second wire drawn via the third opening, where the third insulator film is formed in a first region of the second insulator film and is not formed in a second region excluding a region including the first wire formed above the liquid chamber.
    • 喷墨头包括具有喷嘴的喷嘴板,喷嘴板上的振动板,由分隔壁隔开的空间形成的液体室,具有公共电极的压电元件,压电体和单独的电极,按此顺序分层 所述振动板的表面,具有第一开口的第一绝缘膜和在所述第一表面上依次层叠的第二开口的第二绝缘膜,经由所述第一开口和所述第二开口从所述单独电极拉出的第一电线, 第三绝缘膜,在第一导线上具有第三开口; 以及经由所述第三开口拉出的第二导线,其中所述第三绝缘体膜形成在所述第二绝缘膜的第一区域中,并且不形成在除了在所述液体室之上形成的所述第一线的区域之外的第二区域中。
    • 3. 发明授权
    • Ink-jet head and ink-jet recording apparatus
    • 喷墨头和喷墨记录装置
    • US08602530B2
    • 2013-12-10
    • US13396830
    • 2012-02-15
    • Satoshi MizukamiMasaki KatoTakahiko KurodaYoshikazu AkiyamaKanshi Abe
    • Satoshi MizukamiMasaki KatoTakahiko KurodaYoshikazu AkiyamaKanshi Abe
    • B41J2/14
    • B41J2/14233B41J2002/14491B41J2202/08
    • An ink-jet head includes a nozzle plate having nozzles, a vibrating plate on the nozzle plate, liquid chambers formed of spaces partitioned by division walls, a piezoelectric element having a common electrode, a piezoelectric body and an individual electrode layered in this order on a surface of the vibrating plate, a first insulator film having a first opening and a second insulator film having a second opening layered in this order on the first surface, a first wire drawn from the individual electrode via the first opening and the second opening, a third insulator film having a third opening on the first wire; and a second wire drawn via the third opening, where the third insulator film is formed in a first region of the second insulator film and is not formed in a second region excluding a region including the first wire formed above the liquid chamber.
    • 喷墨头包括具有喷嘴的喷嘴板,喷嘴板上的振动板,由分隔壁隔开的空间形成的液体室,具有公共电极的压电元件,压电体和单独的电极,按此顺序分层 所述振动板的表面,具有第一开口的第一绝缘膜和在所述第一表面上依次层叠的第二开口的第二绝缘膜,经由所述第一开口和所述第二开口从所述单独电极拉出的第一电线, 第三绝缘膜,在第一导线上具有第三开口; 以及经由所述第三开口拉出的第二导线,其中所述第三绝缘体膜形成在所述第二绝缘膜的第一区域中,并且不形成在除了在所述液体室之上形成的所述第一线的区域之外的第二区域中。
    • 10. 发明申请
    • Method for manufacturig a semiconductor device including a shallow trench isolation
    • 制造包括浅沟槽隔离的半导体器件的方法
    • US20070252222A1
    • 2007-11-01
    • US11824763
    • 2007-07-02
    • Kanshi Abe
    • Kanshi Abe
    • H01L29/94
    • H01L29/0847H01L21/26513H01L21/266H01L21/76237H01L29/66575
    • A method of manufacturing a semiconductor device having a semiconductor substrate that includes an active region for forming transistor elements, which includes a gate, and an element isolation region for isolating the transistor elements separately each other, which has a STI structure, the method comprises; first—ion implanting first ions onto the surface of the semiconductor substrate in a region other than a stress region in the active region, which is located at the interface with the element isolation region, in the stress region, a potential stress is generated by forming the element isolation region and/or the difference between a material of the element isolation region and a material of the semiconductor substrate, so that a first impurity region for a source and/or a drain is formed in the active region in which the gate is not formed; and second-ion implanting second ions each of which mass is smaller than that of each of the first ions so that a second ion impurity region is formed in the stress region.
    • 一种具有半导体器件的半导体器件的制造方法,该半导体器件包括用于形成晶体管元件的有源区,其包括栅极,以及用于将晶体管元件彼此分离的元件隔离区域,所述元件隔离区域具有STI结构。 在位于应力区域的与元件隔离区的界面处的有源区域以外的应力区域之外的第一离子注入到半导体衬底的表面上的第一离子通过成形产生电位应力 元件隔离区域和/或元件隔离区域的材料与半导体衬底的材料之间的差异,使得在栅极和/或漏极的有源区域中形成用于源极和/或漏极的第一杂质区域 未形成 以及二次离子注入第二离子,其质量小于每个第一离子的质量,使得在应力区域中形成第二离子杂质区。