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    • 2. 发明授权
    • Electrophotographic light-receiving member
    • 电子照相光接收元件
    • US06379852B2
    • 2002-04-30
    • US08927414
    • 1997-09-10
    • Shinji TsuchidaHiroaki NiinoSatoshi Kojima
    • Shinji TsuchidaHiroaki NiinoSatoshi Kojima
    • G03G508
    • G03G5/082G03G5/08221G03G5/08228G03G5/08235G03G5/08242G03G5/0825G03G5/08257
    • An electrophotographic light-receiving member comprising a conductive support and provided thereon a photoconductive layer formed of a non-single-crystal material mainly composed of silicon atom and containing hydrogen atom and an element belonging to Group IIIb of the periodic table; wherein the photoconductive layer has hydrogen atom content, an optical band gap and a characteristic energy obtained from the exponential tail of light absorption spectra, all in specific ranges, and has on the surface side thereof a second layer region that absorbs a prescribed amount of light incident on the photoconductive layer and on the support side thereof the other first layer region; the element belonging to Group IIIb of the periodic table being contained in the second layer region in an amount made smaller than that in the first layer region. This can provide an electrophotographic light-receiving member that has achieved all the improvement in chargeability, the improvement in temperature characteristics thereof and the decrease in photomemory, and has been dramatically improved in image quality, and can provide an electrophotographic light-receiving member improved in temperature characteristics of sensitivity and linearity of sensitivity especially in the case where semiconductor lasers or LEDs are used.
    • 一种电子摄影光接收元件,包括导电支撑并在其上提供由主要由硅原子组成并含有氢原子的非单晶材料和属于周期表第IIIb族元素的光电导层; 其中光电导层具有氢原子含量,光学带隙和从光吸收光谱的指数尾部获得的特征能量,均在特定范围内,并且在其表面侧具有吸收规定量的光的第二层区域 入射在光电导层上并在其支撑侧上的另一个第一层区域; 属于周期表的IIIb族的元素以比第一层区域小的量包含在第二层区域中。 这可以提供一种已经实现了充电性,其温度特性的改善和光存储器的减少的全部改进的电子成象受光部件,并且显着提高了图像质量,并且可以提供一种改进的电子成象受光部件 特别是在使用半导体激光器或LED的情况下,灵敏度和灵敏度的线性度的温度特性。
    • 3. 发明授权
    • Electrophotographic light-receiving member
    • 电子照相光接收元件
    • US06294299B2
    • 2001-09-25
    • US09137081
    • 1998-08-20
    • Shinji TsuchidaHiroaki NiinoSatoshi KojimaDaisuke Tazawa
    • Shinji TsuchidaHiroaki NiinoSatoshi KojimaDaisuke Tazawa
    • G03G1502
    • G03G5/08235G03G5/08242
    • An electrophotographic light-receiving member has a conductive support and a photoconductive layer composed of a non-monocrystalline material comprising silicon atoms as a matrix, hydrogen and/or halogen atoms, and an element belonging to Group IIIb of the periodic table. The photoconductive layer has from the surface side toward the conductive support side, a third layer region that absorbs 50-90% of incident image exposure light and a second layer region that absorbs 60-90% of pre-exposure light incident on the photoconductive layer. The Group IIIb element is present such that its content decreases from the conductive support side to the surface side. In three embodiments the photoconductive layer has, respectively: 10-30 at. % H; 10-20 at. % H and 25-40 at % H; an optical band gap of 1.75-1.85 eV, 1.65-1.75 eV and 1.80-1.90 eV and a characteristic energy of each of 50-55 meV.
    • 电子照相受光部件具有导电性支持体和由包含硅原子作为基体的非单晶材料,氢和/或卤素原子以及属于元素周期表IIIb族的元素构成的光电导层。 光电导层从表面侧朝向导电支撑侧,吸收50-90%的入射图像曝光光的第三层区域和吸收入射在光电导层上的60-90%的预曝光光的第二层区域 。 IIIb族元素的存在使得其含量从导电性支持侧减少到表面侧。 在三个实施例中,光电导层分别具有:10-30英寸 % H; 10-20在 %H和25-40at%H; 1.75〜85 eV,1.65〜1.75 eV,1.80〜1.90 eV的光学带隙,50〜55 meV的特征能量。
    • 5. 发明授权
    • Light receiving member for electrophotography and fabrication process
thereof
    • 电子摄影用光接收元件及其制造方法
    • US5945241A
    • 1999-08-31
    • US919347
    • 1997-08-28
    • Hiroaki NiinoSatoshi KojimaShinji Tsuchida
    • Hiroaki NiinoSatoshi KojimaShinji Tsuchida
    • G03G5/08G03G5/082G03G5/147G03G5/043
    • G03G5/08214G03G5/08221G03G5/14704
    • For providing a light receiving member for electrophotography improved in chargeability, temperature characteristic of sensitivity, and optical memory characteristic and presenting excellent quality of image, the light receiving member for electrophotography comprises an electrically conductive substrate and a photoconductive layer of a non-monocrystal material containing hydrogen atoms in the matrix of silicon atoms, wherein the photoconductive layer has regions formed under such conditions as to obtain a first layer region and a second layer region both having characteristic energy (Eu) of not more than 55 meV obtained from a linear portion (an exponential tail) of a function expressed by Equation (I) defined below with photon energy (h.nu.) as an independent variable and absorption coefficient (.alpha.) of photoabsorption spectrum as a dependent variable:ln.alpha.=(1/Eu).multidot.h.nu.+.alpha..sub.1 (I)and having mutually different contents of hydrogen atoms and optical band gaps in respectively specific ranges, and wherein the ratio of the thickness of the second layer region to the thickness of the photoconductive layer is in a fixed range.
    • 为了提供用于电荷照相的光接收元件,提高了充电性,灵敏度的温度特性和光学记忆特性,并呈现出优异的图像质量,用于电子照相的光接收元件包括导电基底和非单晶材料的光电导层, 硅原子的基质中的氢原子,其中光电导层具有在获得第一层区域和第二层区域形成的区域,所述第一层区域和第二层区域都具有从直线部分获得的特征能量(Eu)不大于55meV( 作为自变量的光子能量(h nu)和吸收光谱的吸收系数(α)作为因变量,由下面定义的等式(I)表示的函数的指数尾):lnα=(1 / Eu)xh nu +α1(I),分别具有相互不同的氢原子和光学带隙的含量 特定范围,并且其中第二层区域的厚度与光电导层的厚度的比率处于固定范围内。
    • 6. 发明授权
    • Eclectrophotographic light-receiving member and process for its
production
    • 光电感光元件及其制作方法
    • US6090513A
    • 2000-07-18
    • US999839
    • 1997-03-27
    • Hiroaki NiinoKoji HitsuishiSatoshi Kojima
    • Hiroaki NiinoKoji HitsuishiSatoshi Kojima
    • G03G5/082G03G5/085
    • G03G5/08242G03G5/08235
    • An electrophotographic light-receiving member comprising a conductive support and a light-receiving layer having a photoconductive layer showing a photoconductivity, formed on the conductive support and formed of a non-monocrystalline material mainly composed of a silicon atom and containing at least one of a hydrogen atom and a halogen atom, wherein said photoconductive layer contains from 10 atomic % to 30 atomic % of hydrogen, the characteristic energy of exponential tail obtained from light absorption spectra at light-incident portions at least of the photoconductive layer is from 50 meV to 60 meV, and the density of states of localization in the photoconductive layer is from 1.times.10.sup.14 cm.sup.-3 to 1.times.10.sup.16 cm.sup.-3. Since the in-gap levels of the photoconductive layer has been controlled, the light-receiving member can be improved in environmental stability and exposure memory at the same time and have superior potential characteristics and image characteristics.
    • 一种电子摄影光接收元件,包括导电支撑体和具有光电导率的光电导层的光接收层,该光电导层形成在导电支撑体上并由主要由硅原子组成的非单晶材料形成,并且包含至少一个 氢原子和卤素原子,其中所述光电导层含有10原子%至30原子%的氢,由至少光电导层的光入射部分处的光吸收光谱获得的指数尾部的特征能量为50meV至 60meV,光电导层中的定位状态密度为1×10 14 cm -3至1×10 16 cm -3。 由于光电导层的间隙间电平已被控制,所以可以同时改善光接收元件的环境稳定性和曝光存储器,并具有优异的电位特性和图像特性。