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    • 4. 发明授权
    • Method of manufacturing microdevice utilizing combined alignment mark
    • 利用组合对准标记制造微型装置的方法
    • US06416912B1
    • 2002-07-09
    • US09699154
    • 2000-10-27
    • Mitsuru KobayashiRyoichi Kaneko
    • Mitsuru KobayashiRyoichi Kaneko
    • G03F900
    • G03F9/7084G03F9/7076
    • An exposure apparatus for accurately and quickly transferring mask patterns to a substrate on which a plurality of pattern layers are formed, and a method of manufacturing microdevices that uses the exposure apparatus. A wafer mark (or substitute wafer mark ) of a gate electrode layer and a wafer mark of a second interlayer insulating layer are formed on a street line of a wafer. Mark bars WMnm (n=1, 2, M−1 to 4) of the wafer marks are alternately arranged, and combined marks are formed. The combined marks are simultaneously detected with an alignment system, and positional information of the wafer marks is computed based on the detection results. Then, the circuit patterns on a reticle are aligned with a shot region on the wafer based on the computed positional information.
    • 一种用于将掩模图形准确且快速地转印到其上形成有多个图案层的基板上的曝光装置,以及使用该曝光装置的微型装置的制造方法。 在晶片的街道线上形成栅电极层的晶片标记(或替代晶片标记)和第二层间绝缘层的晶片标记。 标记条交替排列晶片标记的WMnm(n = 1,2,M-1至4),形成组合标记。 利用对准系统同时检测组合标记,并根据检测结果计算晶片标记的位置信息。 然后,基于所计算的位置信息,将掩模版上的电路图案与晶片上的照射区域对齐。