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1. 发明授权

US4149142A Signal transmission system with an error control technique 失效
标题翻译：具有误差控制技术的信号传输系统
公开(公告)号：US4149142A
公开(公告)日：1979-04-10
申请号：US826053
申请日：1977-08-19
申请人： Satoshi Kageyama , Keiji Takeuchi , Keisuke Ogi
发明人： Satoshi Kageyama , Keiji Takeuchi , Keisuke Ogi
IPC分类号： H03M7/00 , H04J1/00 , H04L1/16 , H04L1/18 , H04N1/32 , H04N7/00 , H04N19/00 , G08C25/02
CPC分类号： H04L1/16 , H04N1/32619 , H04L1/1809
摘要： A signal transmission system embodying this invention which can control errors comprises a selective automatic repeat request (ARQ) system for controlling errors occurring in transmission of data on telephone data communication channels. With this selective ARQ system, an error-controlling signal conducted through a backward channel does not contain a check bit for detection or correction of errors, thereby preventing a time loss which might occur if a error-control signal was repeatedly issued between the transmission and receiving sides. The subject signal-transmitting apparatus is adapted to be used in a static image transmission having a large amount of data and has such a circuit arrangement as attains the efficient transmission of data and the display of an error-free image of good picture quality.
摘要翻译：体现本发明的可以控制误差的信号传输系统包括一个选择性自动重复请求（ARQ）系统，用于控制电话数据通信信道上的数据传输中发生的错误。利用这种选择性ARQ系统，通过反向信道传输的误差控制信号不包含用于检测或校正错误的校验位，从而防止在传输和传输之间重复发出错误控制信号时可能发生的时间损失接收方。主体信号发送装置适用于具有大量数据的静态图像传输，并且具有实现数据的有效传输和良好图像质量的无差错图像的显示的电路结构。

2. 发明授权

US08618634B2 Semiconductor device manufacturing method and semiconductor device 有权
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US08618634B2
公开(公告)日：2013-12-31
申请号：US13364574
申请日：2012-02-02
申请人： Satoshi Kageyama
发明人： Satoshi Kageyama
IPC分类号： H01L27/06 , H01L27/08 , H01L21/02 , H01L21/768
CPC分类号： H01L28/75 , H01L21/76816 , H01L27/0207 , H01L28/60
摘要： A semiconductor device manufacturing method includes forming a first capacitance film formed on the lower electrode; forming an intermediate electrode in a first region on the first capacitance film, wherein the first capacitance is interposed between the intermediate electrode and the lower electrode; forming a second capacitance film on the intermediate electrode to be interposed between the first capacitance film and the second capacitance film; and forming an upper electrode, wherein at least a portion of the second capacitance film is interposed between the upper electrode and the intermediate electrode; the upper electrode extending to a second region outside the first region, and having at least the first capacitance film interposed between the upper electrode and the lower electrode in the second region.
摘要翻译：一种半导体器件制造方法，包括形成在下电极上形成的第一电容膜; 在所述第一电容膜上的第一区域中形成中间电极，其中所述第一电容介于所述中间电极和所述下电极之间; 在介于所述第一电容膜和所述第二电容膜之间的所述中间电极上形成第二电容膜; 以及形成上电极，其中所述第二电容膜的至少一部分插入在所述上电极和所述中间电极之间; 所述上电极延伸到所述第一区域外的第二区域，并且在所述第二区域中至少具有介于所述上电极和所述下电极之间的所述第一电容膜。

3. 发明授权

US08164197B2 Semiconductor device having multilayer interconnection structure 有权
标题翻译：具有多层互连结构的半导体器件
公开(公告)号：US08164197B2
公开(公告)日：2012-04-24
申请号：US12222309
申请日：2008-08-06
申请人： Yuichi Nakao , Satoshi Kageyama
发明人： Yuichi Nakao , Satoshi Kageyama
IPC分类号： H01L23/535
CPC分类号： H01L23/522 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to the present invention includes: a first interlayer dielectric film; a lower wire formed on the first interlayer dielectric film; a second interlayer dielectric film formed on the first interlayer dielectric film and the lower wire; and an upper wire formed on the second interlayer dielectric film to intersect with a prescribed portion of the lower wire in plan view. The first interlayer dielectric film is provided with a groove dug from the upper surface thereof in a region including the prescribed portion in plan view. The prescribed portion enters the groove. At least a portion of the second interlayer dielectric film formed on the lower wire has a planar upper surface.
摘要翻译：根据本发明的半导体器件包括：第一层间电介质膜; 形成在所述第一层间电介质膜上的下线; 形成在第一层间电介质膜和下导线上的第二层间绝缘膜; 以及形成在第二层间电介质膜上的上部线，在平面图中与下部电线的规定部分相交。第一层间电介质膜在平面图中包括从规定部分的区域中从其上表面挖出的沟槽。规定部分进入凹槽。形成在下导线上的第二层间绝缘膜的至少一部分具有平坦的上表面。

4. 发明授权

US07974670B2 Method of measuring superficial chemical species and apparatus for measuring the same 有权
标题翻译：测量表面化学物质的方法及其测量装置
公开(公告)号：US07974670B2
公开(公告)日：2011-07-05
申请号：US10590407
申请日：2005-02-22
申请人： Takayuki Souta , Katsuo Aizawa , Atsushi Nakamura , Satoshi Kageyama , Shinya Ohtsubo , Fumihiko Ichikawa
发明人： Takayuki Souta , Katsuo Aizawa , Atsushi Nakamura , Satoshi Kageyama , Shinya Ohtsubo , Fumihiko Ichikawa
IPC分类号： A61B5/1455
CPC分类号： A61B5/444 , A61B5/0059 , A61B5/0075
摘要： A method of processing skin surface observation measuring data which is able to address various sicknesses and reduce an error in sickness detection, and a measuring apparatus requiring no filter. The measuring apparatus an irradiator applying a white light to a biological surface as a sample, a detector detecting the spectra of the white light reflected off a plurality of positions on the biological surface, a plotter plotting the absorbances of the above spectra to a light spectrum multi-dimensional space, an analyzer subjecting data in the spectrum multi-dimension space obtained from the plurality of positions to multivariate analysis to determine the eigenvectors of at least first, second and third principal components, and a display projecting data at respective positions in respective eigenvector directions to display their magnitudes on a two-dimension display screen on a gray scale or in colors corresponding to the magnitudes; and a measuring method by the apparatus.
摘要翻译：一种能够处理各种疾病并减少疾病检测误差的皮肤表面观察测量数据的处理方法以及不需要过滤器的测量装置。测量装置是将白光施加到作为样品的生物体表面的照射器，检测从生物体表面上的多个位置反射的白光的光谱的检测器，绘制器将上述光谱的吸光度绘制成光谱多维空间的分析器，将从多个位置获得的光谱多维空间中的数据进行多元分析的分析器，以确定至少第一，第二和第三主要分量的特征向量，以及在相应的位置上的显示投影数据特征向量方向，以二维显示屏幕上的灰度或相应于数值的颜色显示其幅度; 以及该装置的测量方法。

5. 发明授权

US07750480B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07750480B2
公开(公告)日：2010-07-06
申请号：US12230618
申请日：2008-09-02
申请人： Satoshi Kageyama
发明人： Satoshi Kageyama
IPC分类号： H01L23/52
CPC分类号： H01L23/53295 , H01L23/522 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device according to the present invention includes: a first wire made of a material mainly composed of Cu; a second wire made of a material mainly composed of Cu; an interlayer dielectric film formed between the first wire and the second wire; a via, made of a material mainly composed of Cu, penetrating through the intermediate dielectric film to be connected to the first wire and the second wire; and a dummy via, made of a material mainly composed of Cu, smaller in via diameter than the via and connected to the first wire while not contributing to electrical connection between the first wire and the second wire.
摘要翻译：根据本发明的半导体器件包括：由主要由Cu构成的材料制成的第一线; 由主要由Cu构成的材料制成的第二线; 形成在第一线和第二线之间的层间绝缘膜; 由主要由Cu构成的材料制成的通孔，穿过中间电介质膜连接到第一线和第二线; 以及由主要由Cu组成的材料制成的虚拟通孔，其通孔直径小于通孔，并连接到第一导线，而不对第一线和第二线之间的电连接起作用。

6. 发明申请

US20100032837A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20100032837A1
公开(公告)日：2010-02-11
申请号：US12445168
申请日：2007-10-11
申请人： Ryosuke Nakagawa , Takahisa Yamaha , Yuichi Nakao , Katsumi Sameshima , Satoshi Kageyama
发明人： Ryosuke Nakagawa , Takahisa Yamaha , Yuichi Nakao , Katsumi Sameshima , Satoshi Kageyama
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L21/76808 , H01L21/2855 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to the present invention includes: a semiconductor substrate; a first copper interconnection provided on the semiconductor substrate; an insulating layer provided over the first copper interconnection and having a hole extending therethrough to the first copper interconnection; a barrier layer composed of a tantalum-containing material and covering at least a sidewall of the hole and a part of the first copper interconnection exposed in the hole; and a second copper interconnection provided in intimate contact with the barrier layer and electrically connected to the first copper interconnection via the barrier layer; wherein the barrier layer has a nitrogen concentration profile such that the concentration of nitrogen contained in the material varies to be lower in a boundary portion of the barrier layer adjacent to the first copper interconnection and in a boundary portion of the barrier layer adjacent to the second copper interconnection and higher in an intermediate portion of the barrier layer defined between the boundary portions.
摘要翻译：根据本发明的半导体器件包括：半导体衬底; 设置在半导体衬底上的第一铜互连; 绝缘层，设置在所述第一铜互连上并且具有穿过其延伸到所述第一铜互连的孔; 由含钽材料构成并且覆盖所述孔的至少一个侧壁和暴露在所述孔中的所述第一铜互连的一部分的阻挡层; 以及第二铜互连，其与阻挡层紧密接触并且经由阻挡层电连接到第一铜互连; 其中所述阻挡层具有氮浓度分布，使得所述材料中包含的氮的浓度在与所述第一铜互连相邻的所述阻挡层的边界部分中以及在与所述第二铜互连相邻的所述势垒层的边界部分中变低铜互连并且在边界部分之间限定的阻挡层的中间部分中较高。

7. 发明申请

US20080251929A1 Semiconductor Device and Semiconductor Device Manufacturing Method 有权
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20080251929A1
公开(公告)日：2008-10-16
申请号：US11579339
申请日：2005-10-21
申请人： Satoshi Kageyama
发明人： Satoshi Kageyama
IPC分类号： H01L23/522
CPC分类号： H01L21/76838 , H01L21/76816 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An inventive semiconductor device includes at least three interconnection layers sequentially stacked without intervention of a via layer. At least one of the interconnection layers includes an interconnection and a via which connects interconnections provided in interconnection layers underlying and overlying the one interconnection layer.
摘要翻译：本发明的半导体器件包括至少三个相互层叠的互连层，而不介入通孔层。互连层中的至少一个包括互连和通孔，其连接提供在一个互连层下面和上方的互连层中的互连。

8. 发明授权

US5850460A Bass speaker 失效
标题翻译：低音扬声器
公开(公告)号：US5850460A
公开(公告)日：1998-12-15
申请号：US793339
申请日：1997-02-26
申请人： Shoji Tanaka , Kazuaki Tamura , Satoshi Kageyama
发明人： Shoji Tanaka , Kazuaki Tamura , Satoshi Kageyama
IPC分类号： H04R1/22 , H04R1/26 , H04R1/28 , H04R25/00
CPC分类号： H04R1/2834 , H04R1/2873 , H04R1/227 , H04R2209/027
摘要： Passive radiators of the same effective vibration area and the same effective vibration mass disposed in mutual opposition, and driver units of the same effective vibration area and the same effective vibration mass disposed in mutual opposition, are mounted to a bandpass type enclosure. The vibration-reaction forces of the opposing passive radiators and opposing driver units on the enclosure are thereby mutually cancelled, and enclosure vibrations are thus greatly reduced. Powerful bass output can be achieved because the diameter of the passive radiators can be increased at will and the use of two passive radiators achieves an extremely large vibration area.
摘要翻译： PCT No.PCT / JP95 / 01728 Sec。 371日期1997年2月26日 102（e）日期1997年2月26日PCT提交1995年8月31日PCT公布。公开号WO96 / 07291 日期1996年3月7日具有相同有效振动区域和相互相对设置的相同有效振动质量的相位散热器和相同有效振动区域的驱动单元和相互相对设置的相同有效振动质量被安装到带通型外壳。因此，相对的被动辐射器和外壳上的相对的驱动器单元的振动反作用力相互抵消，从而大大降低了外壳的振动。可以实现强大的低音输出，因为无源辐射器的直径可以随意增加，并且使用两个无源辐射器实现极大的振动面积。

9. 发明授权

US4791496A System for presenting audiovisual information to an audience 失效
标题翻译：用于向观众呈现视听信息的系统
公开(公告)号：US4791496A
公开(公告)日：1988-12-13
申请号：US849823
申请日：1986-04-09
申请人： Satoshi Kageyama , Yasushi Nakamura , Takashi Kondo , Shozo Abe , Kazuhiro Mori
发明人： Satoshi Kageyama , Yasushi Nakamura , Takashi Kondo , Shozo Abe , Kazuhiro Mori
IPC分类号： G06Q50/00 , G06Q50/10 , G06Q50/20 , H04N1/21 , H04N5/765 , H04N9/802 , H04N9/82 , H04N5/76
CPC分类号： H04N9/8233 , H04N1/32117 , H04N5/765 , H04N9/802 , H04N2201/3264
摘要： With an audiovisual information presentation system, pictorial image data, drawn on paper sheets in advance and to be optically projected on a screen using an optical projector, is sequentially sensed by a TV camea. Speech corresponding to the image data is input through a microphone. A data storage unit stores the image data and corresponding audio data together with code data for identifying pairs of image and audio data. When a search mode is designated, a desired pair of image and audio data is automatically searched from the data storage unit under the control of a CPU, and is reproduced by electrical monitor display units and a loudspeaker unit independent of image display on the projection screen.
摘要翻译：利用视听信息呈现系统，通过电视机依次感测到使用光学投影仪预先绘制在纸张上并且被光学投影在屏幕上的图形图像数据。通过麦克风输入与图像数据对应的语音。数据存储单元将图像数据和对应的音频数据与用于识别图像和音频数据对的代码数据一起存储。当指定搜索模式时，在CPU的控制下，从数据存储单元自动搜索期望的一对图像和音频数据，并且由电子监视器显示单元和与投影屏幕上的图像显示无关的扬声器单元再现。

10. 发明授权

US08198732B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08198732B2
公开(公告)日：2012-06-12
申请号：US12153587
申请日：2008-05-21
申请人： Satoshi Kageyama
发明人： Satoshi Kageyama
IPC分类号： H01L23/48
CPC分类号： H01L23/53295 , H01L21/76831 , H01L21/76843 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of the present invention includes an insulating film made of a low dielectric constant material having a smaller specific dielectric constant than SiO2, a wiring trench formed in the insulating film, a first barrier film made of SiO2 or SiCO formed at least on the side surface of the wiring trench, Cu wiring mainly composed of Cu embedded in the wiring trench, and a second barrier film made of a compound containing Si, O and a predetermined metallic element covering the surface of the Cu wiring opposed to the wiring trench.
摘要翻译：本发明的半导体器件包括由比介电常数小于SiO 2的低介电常数材料制成的绝缘膜，在该绝缘膜中形成的布线沟槽，至少形成在该绝缘膜上的由SiO 2或SiCO形成的第一阻挡膜布线沟槽的侧表面，主要由嵌入布线沟槽中的Cu的Cu布线和由包含Si，O的化合物制成的第二阻挡膜和覆盖与布线沟槽相对的Cu布线的表面的预定金属元件。

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