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    • 3. 发明申请
    • ALIGNMENT APPARATUS FOR SEMICONDUCTOR WAFER
    • 半导体波形对准装置
    • US20100171823A1
    • 2010-07-08
    • US12649120
    • 2009-12-29
    • Masayuki YamamotoSatoshi Ikeda
    • Masayuki YamamotoSatoshi Ikeda
    • H04N7/18G01B11/26
    • H01L21/681
    • A wafer has an annular ridge formed along an outer periphery thereof to serve as a reinforcing portion, and a circuit pattern surrounded with the reinforcing portion. The wafer is placed on a wafer placement plane of a holding stage in a state that the circuit pattern is directed downward. The wafer placement plane is larger in size than the wafer. On the holding stage, a center of the wafer is aligned with a center of the holding stage in such a manner that a plurality of guide pins are engaged with relevant cutout portions formed on the reinforcing portion. Then, the holding stage rotates while suction-holding the reinforcing portion of the wafer, and simultaneously a photosensor detects a portion for alignment formed on the outer periphery of the wafer.
    • 晶片具有沿其外周形成的环形脊,用作加强部分,以及由加强部分包围的电路图案。 将晶片放置在电路图案向下的状态下的保持台的晶片放置平面上。 晶片放置平面的尺寸大于晶片。 在保持台上,将晶片的中心与保持台的中心对准,使得多个引导销与形成在加强部上的相关切口部接合。 然后,在保持晶片的加强部分的同时,保持台旋转,同时光电传感器检测形成在晶片的外周上的对准部分。
    • 7. 发明授权
    • Thin film forming apparatus and method
    • 薄膜成膜装置及方法
    • US07033461B2
    • 2006-04-25
    • US10284287
    • 2002-10-31
    • Noriaki TaniToshihiro SuzukiSatoshi IkedaHiroaki KawamuraSatoru IshibashiKouichi HanzawaTakafumi Matsumoto
    • Noriaki TaniToshihiro SuzukiSatoshi IkedaHiroaki KawamuraSatoru IshibashiKouichi HanzawaTakafumi Matsumoto
    • C23C14/35C23C16/00
    • C23C14/044C23C14/545
    • The present invention provides an efficient thin film forming apparatus which is capable of correcting a film thickness so as to take care of a variation in distribution in the film thickness and to take care of the circumferential distribution of the film thickness, as well as a method for forming a thin film using this film forming apparatus. The method comprises the first step of first forming a thin film to a predetermined percentage out of thickness through an opening 8a in a shutter 8, the second step of then using a film thickness monitor 10 to measure the distribution of the thickness of the thin film formed in the first step, and the third step of reducing a film formation rate by an opening 8b in the shutter 8 between a substrate 4 and a sputtering cathode 6 as compared to that of the first step and correcting the thickness of the thin film by an opening 13a in the first film thickness correcting plate 13 between the substrate 4 and the sputtering cathode 6 corresponding to the distribution of the film thickness measured by the film thickness monitor 10 in the second step. Then, the second step is carried out again, during which the film thickness monitor 10 is used to measure the distribution of the thickness of the thin film formed in the third step. Further, the third and second steps are repeatedly carried out.
    • 本发明提供了一种有效的薄膜形成装置,该薄膜形成装置能够校正膜厚度,以便保证薄膜厚度分布的变化,并且能够保证薄膜厚度的周向分布,以及方法 用于使用该成膜装置形成薄膜。 该方法包括首先通过快门8中的开口8a将薄膜首先形成预定百分比的厚度的第一步骤,然后使用薄膜厚度监测器10来测量薄膜厚度的分布的第二步骤 在第一步骤中形成的薄膜,以及第三步骤,通过与第一步骤相比在基板4和溅射阴极6之间的快门8中的开口8b降低成膜速率,并且校正薄膜的厚度 在第二步骤中,由基板4和溅射阴极6之间的第一膜厚校正板13的开口部分13a对应于由膜厚度监视器10测量的膜厚度的分布。 然后,再次进行第二步骤,在此期间,膜厚度监测器10用于测量在第三步骤中形成的薄膜的厚度分布。 此外,重复执行第三和第二步骤。