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1. 发明申请

US20110294445A1 Semiconductor Antenna Switch 有权
标题翻译：半导体天线开关
公开(公告)号：US20110294445A1
公开(公告)日：2011-12-01
申请号：US13113743
申请日：2011-05-23
申请人： Satoshi Goto , Masao Kondo
发明人： Satoshi Goto , Masao Kondo
IPC分类号： H04B1/44
CPC分类号： H01P1/15 , H01P1/213
摘要： A semiconductor antenna switch has an antenna terminal, a transmission terminal and a reception terminal. The antenna switch is capable of reducing harmonic distortion even though it includes field effect transistors formed over a silicon substrate. A shunt transistor including a plurality of series-connected field effect transistors is connected between he transmission terminal and a common terminal, such as a common terminal, which may be an electrical ground. Off capacitances and/or gate widths of a plurality of the series-connected field effect transistors increase monotonically in the direction from the common terminal to the transmission terminal, or equivalently, decrease monotonically in the direction from the transmission terminal to the common terminal.
摘要翻译：半导体天线开关具有天线端子，发送端子和接收端子。天线开关即使包括形成在硅衬底上的场效应晶体管也能够减少谐波失真。包括多个串联连接的场效应晶体管的并联晶体管连接在传输终端和诸如可以是电接地的公共端子的公共端子之间。多个串联场效应晶体管的关断电容和/或栅极宽度在从公共端子到发送端子的方向上单调增加，或者等效地在从发送端子到公共端子的方向上单调减小。

2. 发明授权

US08786002B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08786002B2
公开(公告)日：2014-07-22
申请号：US13151306
申请日：2011-06-02
申请人： Masao Kondo , Masatoshi Morikawa , Satoshi Goto
发明人： Masao Kondo , Masatoshi Morikawa , Satoshi Goto
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L29/93 , H04B1/48
摘要： In terms of achieving a reduction in the cost of an antenna switch, there is provided a technology capable of minimizing harmonic distortion generated in the antenna switch even when the antenna switch is particularly formed of field effect transistors formed over a silicon substrate. Between the source region and the drain region of each of a plurality of MISFETs coupled in series, a distortion compensating capacitance circuit is coupled which has a voltage dependency such that, in either of the cases where a positive voltage is applied to the drain region based on the potential of the source region and where a negative voltage is applied to the drain region based on the potential of the source region, the capacitance decreases to a value smaller than that in a state where the potential of the source region and the potential of the drain region are at the same level.
摘要翻译：在实现天线开关的成本降低方面，提供了一种能够最小化在天线开关中产生的谐波失真的技术，即使天线开关特别地由形成在硅衬底上的场效应晶体管形成。在串联耦合的多个MISFET的源极区域和漏极区域之间，耦合失真补偿电容电路，其具有电压依赖性，使得在基于漏极区域施加正电压的情况下，基于源极区域的电位，并且基于源极区域的电位将负电压施加到漏极区域，电容降低到比源极区域的电位和电位区域的电位小的值漏极区域处于相同的电平。

3. 发明授权

US08244199B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08244199B2
公开(公告)日：2012-08-14
申请号：US12695192
申请日：2010-01-28
申请人： Satoshi Goto , Tomoyuki Miyake , Masao Kondo
发明人： Satoshi Goto , Tomoyuki Miyake , Masao Kondo
IPC分类号： H04B1/28
CPC分类号： H01L21/823425 , H01L21/823456 , H01L21/823462 , H01L27/088
摘要： In view of achieving a cost reduction of an antenna switch, a technique is provided which can reduce harmonic distortion generated in the antenna switch as much as possible in particular even when the antenna switch is comprised of a field effect transistor formed over a silicon substrate.Each of a TX series transistor, an RX series transistor, and an RX shunt transistor is comprised of a low voltage MISFET, while a TX shunt transistor is comprised of a high voltage MISFET. Thus, by reducing the number of serial connections of the high voltage MISFETs constituting the TX shunt transistor, the nonuniformity of the voltage amplitudes applied to the respective serially-coupled high voltage MISFETs is suppressed. As a result, the generation of high-order harmonics can be suppressed.
摘要翻译：考虑到实现天线开关的成本降低，提供了即使当天线开关由在硅衬底上形成的场效应晶体管构成时，也可以尽可能地减少天线开关中产生的谐波失真的技术。 TX系列晶体管，RX系列晶体管和RX分流晶体管中的每一个由低电压MISFET组成，而TX并联晶体管由高电压MISFET组成。因此，通过减少构成TX并联晶体管的高电压MISFET的串联连接数，可抑制施加到各串联耦合的高电压MISFET的电压幅度的不均匀性。结果，可以抑制高次谐波的产生。

4. 发明授权

US08401496B2 Semiconductor antenna switch 有权
标题翻译：半导体天线开关
公开(公告)号：US08401496B2
公开(公告)日：2013-03-19
申请号：US13113743
申请日：2011-05-23
申请人： Satoshi Goto , Masao Kondo
发明人： Satoshi Goto , Masao Kondo
IPC分类号： H04B1/44
CPC分类号： H01P1/15 , H01P1/213
摘要： A semiconductor antenna switch has an antenna terminal, a transmission terminal and a reception terminal. The antenna switch is capable of reducing harmonic distortion even though it includes field effect transistors formed over a silicon substrate. A shunt transistor including a plurality of series-connected field effect transistors is connected between he transmission terminal and a common terminal, such as a common terminal, which may be an electrical ground. Off capacitances and/or gate widths of a plurality of the series-connected field effect transistors increase monotonically in the direction from the common terminal to the transmission terminal, or equivalently, decrease monotonically in the direction from the transmission terminal to the common terminal.
摘要翻译：半导体天线开关具有天线端子，发送端子和接收端子。天线开关即使包括形成在硅衬底上的场效应晶体管也能够减少谐波失真。包括多个串联连接的场效应晶体管的并联晶体管连接在传输终端和诸如可以是电接地的公共端子的公共端子之间。多个串联场效应晶体管的关断电容和/或栅极宽度在从公共端子到发送端子的方向上单调增加，或者等效地在从发送端子到公共端子的方向上单调减小。

5. 发明授权

US08385876B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08385876B2
公开(公告)日：2013-02-26
申请号：US13562380
申请日：2012-07-31
申请人： Satoshi Goto , Tomoyuki Miyake , Masao Kondo
发明人： Satoshi Goto , Tomoyuki Miyake , Masao Kondo
IPC分类号： H04B1/28
CPC分类号： H01L21/823425 , H01L21/823456 , H01L21/823462 , H01L27/088
摘要： In view of achieving a cost reduction of an antenna switch, a technique is provided which can reduce harmonic distortion generated in the antenna switch as much as possible in particular even when the antenna switch is comprised of a field effect transistor formed over a silicon substrate. Each of a TX series transistor, an RX series transistor, and an RX shunt transistor is comprised of a low voltage MISFET, while a TX shunt transistor is comprised of a high voltage MISFET. Thus, by reducing the number of serial connections of the high voltage MISFETs constituting the TX shunt transistor, the nonuniformity of the voltage amplitudes applied to the respective serially-coupled high voltage MISFETs is suppressed. As a result, the generation of high-order harmonics can be suppressed.
摘要翻译：考虑到实现天线开关的成本降低，提供了即使当天线开关由在硅衬底上形成的场效应晶体管构成时，也可以尽可能地减少天线开关中产生的谐波失真的技术。 TX系列晶体管，RX系列晶体管和RX分流晶体管中的每一个由低电压MISFET组成，而TX并联晶体管由高电压MISFET组成。因此，通过减少构成TX并联晶体管的高电压MISFET的串联连接数，可抑制施加到各串联耦合的高电压MISFET的电压幅度的不均匀性。结果，可以抑制高次谐波的产生。

6. 发明授权

US08838044B2 Attenuating antenna switch and communication device 有权
标题翻译：衰减天线开关和通讯装置
公开(公告)号：US08838044B2
公开(公告)日：2014-09-16
申请号：US13610237
申请日：2012-09-11
申请人： Satoshi Goto , Kazuaki Hori , Satoshi Sakurai
发明人： Satoshi Goto , Kazuaki Hori , Satoshi Sakurai
IPC分类号： H04B1/44 , H04B1/10
CPC分类号： H04B1/109 , Y02D70/00
摘要： An attenuating antenna switch may be used to suppress increase in the scale and power consumption of an RFIC. The antenna switch has a first terminal, a second terminal, and an antenna terminal coupled to the first and second terminals and configured to be connected to an antenna. The first switch switches between a first state in which a high frequency signal is propagated between the first terminal and the antenna terminal, and a second state in which the high frequency signal is interrupted. A second switch switches between the first and second states between the second terminal and the antenna terminal. The first and second switches are controlled in a mutually exclusive manner such that only one of the two switches can be in the first state at any given time. When in the first state, each switch adjusts an attenuation amount of the high frequency signal.
摘要翻译：可以使用衰减天线开关来抑制RFIC的规模和功耗的增加。天线开关具有耦合到第一和第二端子并被配置为连接到天线的第一端子，第二端子和天线端子。第一开关在高频信号在第一端子和天线端子之间传播的第一状态和高频信号被中断的第二状态之间切换。第二开关在第二端子和天线端子之间的第一和第二状态之间切换。第一和第二开关以相互排斥的方式进行控制，使得两个开关中只有一个可以在任何给定时间处于第一状态。当处于第一状态时，每个开关调节高频信号的衰减量。

7. 发明授权

US08704489B2 Battery system, vehicle, and battery mounted device 有权
标题翻译：电池系统，车辆和电池安装装置
公开(公告)号：US08704489B2
公开(公告)日：2014-04-22
申请号：US12532204
申请日：2009-01-20
申请人： Hiroshi Hamaguchi , Satoshi Goto
发明人： Hiroshi Hamaguchi , Satoshi Goto
IPC分类号： H02J7/00
CPC分类号： H01M10/44 , H01M10/0525 , H01M10/484 , H02J7/0075 , Y02E60/122 , Y02T10/7011
摘要： A battery system (SV1) comprises a lithium ion secondary battery (101), charge and discharge control means (S2, S6-S8), and internal resistance detecting means (M1). The charge and discharge control means comprises: mode control means including increasing mode control means (S2) for increasing the internal resistance of the lithium ion secondary battery and decreasing mode control means (S8) for decreasing the internal resistance; and mode selecting means (S6, S7) for selecting the decreasing mode control means (S8) or the increasing mode control means (S2) when a level of the internal resistance is estimated by the internal resistance detecting means.
摘要翻译：电池系统（SV1）包括锂离子二次电池（101），充放电控制装置（S2，S6-S8）和内部电阻检测装置（M1）。充放电控制装置包括：模式控制装置，包括用于增加锂离子二次电池的内阻的增加模式控制装置（S2）和用于降低内阻的减少模式控制装置（S8）; 以及当通过内部电阻检测装置估计内部电阻的电平时，用于选择减小模式控制装置（S8）或增加模式控制装置（S2）的模式选择装置（S6，S7）。

8. 发明授权

US08668839B2 Mn-Zn-co ferrite 有权
标题翻译： Mn-Zn-Co铁氧体
公开(公告)号：US08668839B2
公开(公告)日：2014-03-11
申请号：US13146808
申请日：2010-01-29
申请人： Hirofumi Yoshida , Yukiko Nakamura , Satoshi Goto
发明人： Hirofumi Yoshida , Yukiko Nakamura , Satoshi Goto
IPC分类号： C04B35/38 , H01F1/34 , C01G49/00
CPC分类号： C01G51/006 , C01G49/0018 , C01G49/009 , C01P2002/52 , C01P2004/03 , C01P2004/61 , C01P2006/12 , C01P2006/42 , C01P2006/80 , C04B35/265 , C04B35/6262 , C04B35/62655 , C04B35/62675 , C04B35/62695 , C04B2235/3208 , C04B2235/3244 , C04B2235/3251 , C04B2235/3262 , C04B2235/3275 , C04B2235/3284 , C04B2235/3418 , C04B2235/5409 , C04B2235/604 , C04B2235/6567 , C04B2235/72 , C04B2235/724 , C04B2235/726 , C04B2235/727 , C04B2235/786 , C04B2235/94 , C04B2235/95 , H01F1/344
摘要： Disclosed is a MnZnCo-based ferrite consisting of base constituents, accessory constituents, and inevitable impurities, which MnZnCo-based ferrite is characterized by adding silicon oxide (SiO2 conversion): 50-400 mass ppm and calcium oxide (CaO conversion): 1000-4000 mass ppm as secondary constituents to base constituents consisting of iron oxide (Fe2O3 conversion): 51.0-53.0 mol %, zinc oxide (ZnO conversion): greater than 12.0 mol % and less than 18.0 mol %, cobalt oxide (CoO conversion): 0.04-0.60 mol %, and manganese oxide (MnO conversion): remainder, and keeping phosphorus, boron, sulfur, and chlorine of the inevitable impurities to phosphorous: less than 3 mass ppm, boron: less than 3 mass ppm, sulfur: less than 5 mass ppm, and chlorine: less than 10 mass ppm. This MnZnCo-based ferrite has the superior characteristics of always having incremental permeability [mu]? of 2000 or greater across a wide temperature range of −40 DEG C. to 85 DEG C. when a 33 A/m direct current magnetic field is applied, even in cases when formed into a small core with outside diameter of approximately 2-6 mm.
摘要翻译：本发明公开了一种MnZnCo系铁氧体，其由碱成分，辅助成分和不可避免的杂质构成，MnZnCo系铁氧体的特征在于，添加氧化硅（SiO 2转化率）：50〜400质量ppm，氧化钙（CaO转化率）：1000〜 4000质量ppm作为由氧化铁（Fe 2 O 3转化率）组成的基质成分的二次成分：51.0-53.0摩尔％，氧化锌（ZnO转化率）：大于12.0摩尔％且小于18.0摩尔％，氧化钴（CoO转化率）： 0.04-0.60摩尔％和氧化锰（MnO转化率）：余量，并将不可避免的杂质的磷，硼，硫和氯保持为磷：小于3质量ppm，硼：小于3质量ppm，硫：少 5质量ppm以下，氯：小于10质量ppm。该MnZnCo基铁氧体具有总是具有增量磁导率μ 在-40A至85℃的宽温度范围内，当施加33A / m直流磁场时，即使在形成具有约2-6的外径的小芯体的情况下 mm。

9. 发明申请

US20120105621A1 MIXED INJECTION INSPECTION SYSTEM 有权
公开(公告)号：US20120105621A1
公开(公告)日：2012-05-03
申请号：US13289831
申请日：2011-11-04
申请人： Hirokazu Nakanishi , Hiroyuki Yuyama , Satoshi Goto
发明人： Hirokazu Nakanishi , Hiroyuki Yuyama , Satoshi Goto
IPC分类号： H04N7/18
CPC分类号： G06Q10/00 , G06F19/00 , G06Q50/22
摘要： A mixed injection inspection system is provided for inspecting mixed injection work for mixing an injection drug by an inspector different from a mixed injection worker. The mixed injection inspection system includes: a mixed injection work photographing device provided in a mixed injection work place and used to photograph the mixed injection work; an inspector side mixed injection work monitor provided in a place remote from the mixed injection work place and used to display the mixed injection work photographed by the mixed injection work photographing device; an inspector side input device provided in a place remote from the mixed injection work place and used to input instructions for the worker working at the mixed injection work place; and a mixed injection worker side display for displaying to the mixed injection worker what has been input by the inspector side input device.

10. 发明申请

US20110279217A1 MN-ZN FERRITE CORE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译： MN-ZN FERRITE CORE及其制造方法
公开(公告)号：US20110279217A1
公开(公告)日：2011-11-17
申请号：US13146839
申请日：2010-01-29
申请人： Hirofumi Yoshida , Yukiko Nakamura , Satoshi Goto
发明人： Hirofumi Yoshida , Yukiko Nakamura , Satoshi Goto
IPC分类号： H01F27/24 , B22F3/12 , B22F1/00
CPC分类号： H01F41/0246 , C01G49/0072 , C04B35/2658 , C04B35/6262 , C04B35/62645 , C04B35/62655 , C04B35/62695 , C04B35/64 , C04B2235/3208 , C04B2235/3244 , C04B2235/3251 , C04B2235/3275 , C04B2235/3418 , C04B2235/604 , C04B2235/6567 , C04B2235/72 , C04B2235/724 , C04B2235/726 , C04B2235/727 , C04B2235/78 , C04B2235/786 , C04B2235/94 , C04B2235/945 , C04B2235/963 , C04B2235/9638 , H01F1/344 , H01F1/36 , H01F3/08
摘要： A Mn—Zn ferrite core includes a basic component, sub-components, and unavoidable impurities, wherein, as the sub-components, silicon oxide (in terms of SiO2): 50 to 400 mass ppm and calcium oxide (in terms of CaO): 50 to 4000 mass ppm are added to the basic component consisting of iron oxide (in terms of Fe2O3): 51.0 to 54.5 moil, zinc oxide (in terms of ZnO): 8.0 to 12.0 moil, and manganese oxide (in terms of MnO): balance; amounts of phosphorus, boron, sulfur, and chlorine in the unavoidable impurities are reduced as follows, phosphorus: less than 3 mass ppm, boron: less than 3 mass ppm, sulfur: less than 5 mass ppm, and chlorine: less than 10 mass ppm; and a ratio of a measured specific surface of the Mn—Zn ferrite core to an ideal specific surface of the Mn—Zn ferrite core satisfies: Measured specific surface/ideal specific surface
摘要翻译： Mn-Zn铁氧体磁芯包括碱性组分，亚组分和不可避免的杂质，其中，作为副组分，氧化硅（以SiO 2换算）：50〜400质量ppm，氧化钙（以CaO计）：由铁氧化物（Fe 2 O 3）构成的碱性成分中添加50〜4000质量ppm：51.0〜54.5Mil，氧化锌（ZnO换算）：8.0〜12.0Mi，氧化锰（MnO ）：余额不可避免的杂质中的磷，硼，硫和氯的量如下降低：磷：小于3质量ppm，硼：小于3质量ppm，硫：小于5质量ppm，氯：小于10质量 ppm; 并且Mn-Zn铁氧体磁心的测得的比表面与Mn-Zn铁氧体磁心的理想比表面积的比率满足：测量的比表面积/理想比表面积<1500 - - - （1）。

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