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    • 1. 发明授权
    • Split-gate non-volatile semiconductor memory device
    • 分闸非易失性半导体存储器件
    • US06075267A
    • 2000-06-13
    • US806447
    • 1997-02-26
    • Satoru TajiHiroaki Nakanishi
    • Satoru TajiHiroaki Nakanishi
    • H01L21/8247H01L27/115H01L29/788H01L29/792
    • H01L27/11521H01L27/115
    • A non-volatile semiconductor memory device includes a substrate and a continuously formed drain diffusion layer and a continuously formed source diffusion layer which are alternately arranged within the substrate. Floating gates are disposed via a tunnel insulating film on the substrate so that they are adjacent to the drain diffusion layer. The floating gates are opposed to each other with the drain diffusion layer therebetween, and spaced away from the source diffusion layer. A control gate extends in a direction orthogonal with a direction in which the source and drain diffusion layers extend, the control gate being formed on the floating gates and the substrate via an insulating film. A select channel is provided between the floating gate closest to the source diffusion layer and the source diffusion layer. A thick insulating film is provided between the drain diffusion layer and the control gate between the floating gates which are opposed to each other with the drain diffusion layer therebetween.
    • 非易失性半导体存储器件包括基板和连续形成的漏极扩散层和连续形成的源极扩散层,其交替地布置在基板内。 浮动栅极通过衬底上的隧道绝缘膜设置,使得它们与漏极扩散层相邻。 浮置栅极彼此相对,其间具有漏极扩散层,并且与源极扩散层间隔开。 控制栅极在与源极和漏极扩散层延伸的方向正交的方向上延伸,控制栅极通过绝缘膜形成在浮动栅极和衬底上。 在最靠近源极扩散层的浮置栅极和源极扩散层之间提供选择沟道。 在漏极扩散层和控制栅极之间的漏极扩散层之间彼此相对的浮置栅极之间设置厚的绝缘膜。
    • 2. 发明授权
    • Semiconductor memory device with improved read speed
    • 半导体存储器件具有改进的读取速度
    • US5966325A
    • 1999-10-12
    • US31001
    • 1998-02-26
    • Hiroaki NakanishiSatoru Taji
    • Hiroaki NakanishiSatoru Taji
    • G11C16/02G11C16/04H01L21/8247H01L27/10H01L27/115H01L29/788H01L29/792G11C13/00
    • H01L27/11519G11C16/0433H01L27/115
    • A memory cell of a memory device is constructed such that a source diffusion layer is divided into blocks each containing 16 word lines, and such that a drain diffusion layer is not divided. Each segment of the source diffusion layer is connected to a metal bit line via a block selection MOS transistor. The metal bit line is formed on an insulating film provided on the source diffusion layer so as to be parallel with the source diffusion layer. The block selection MOS transistor is connected to the metal bit line via a contact hole. A gate electrode of the block selection MOS transistor is formed of a polysilicon film for providing a selection gate used to form a word line of the memory cell. A source diffusion layer and a drain diffusion layer of the block selection MOS transistor are formed of the same material as the source diffusion layer of the memory cell and the drain diffusion layer of the memory cell.
    • 存储器件的存储单元被构造成使得源极扩散层被分成包含16个字线的块,并且使得漏极扩散层不被划分。 源极扩散层的每个段通过块选择MOS晶体管连接到金属位线。 金属位线形成在设置在源极扩散层上的绝缘膜上,以与源极扩散层平行。 块选择MOS晶体管经由接触孔与金属位线连接。 块选择MOS晶体管的栅电极由多晶硅膜形成,用于提供用于形成存储单元的字线的选择栅极。 块选择MOS晶体管的源极扩散层和漏极扩散层由与存储单元的源极扩散层和存储单元的漏极扩散层相同的材料形成。
    • 4. 发明授权
    • Sensor using radiation pulses
    • 传感器使用辐射脉冲
    • US06759644B2
    • 2004-07-06
    • US10100225
    • 2002-03-14
    • Susumu MizuharaArata NakamuraHiroaki Nakanishi
    • Susumu MizuharaArata NakamuraHiroaki Nakanishi
    • H01J4014
    • G01J1/44G01S7/493G01S7/527
    • A sensor has an emitting device for emitting radiation pulses repeatedly and a receiving device for receiving these pulses. The receiving device includes a converter such as a photoelectric converter to convert the received radiation pulses into electrical pulses. On the basis of a known waveform characteristic or characteristics of true electrical pulse it is judged if a pulse which appears on the output line of the converter is a true electrical pulse caused by receiving the radiation pulse emitted from the emitting device or a false electrical pulse caused by noise. The result of this judgment is outputted from an output device. The emitting device may serve to emit the pulses according to a specified bit pattern and the receiving device may serve to compare the pattern of received pulses with a standard bit pattern and to thereby distinguish between true and false electrical pulses.
    • 传感器具有用于重复发射辐射脉冲的发射装置和用于接收这些脉冲的接收装置。 接收装置包括诸如光电转换器的转换器,以将接收到的辐射脉冲转换成电脉冲。 基于已知的波形特性或真电脉冲的特性,判断出现在转换器的输出线上的脉冲是否是由接收从发射装置发射的辐射脉冲或假电脉冲引起的真电脉冲 造成噪音 该判断结果从输出装置输出。 发射装置可以用于根据指定的位模式发射脉冲,并且接收装置可以用于将接收的脉冲的模式与标准位模式进行比较,从而区分真假电脉冲。
    • 5. 发明授权
    • Photoelectric sensor using radiation pulses
    • 光电传感器使用辐射脉冲
    • US06717129B1
    • 2004-04-06
    • US10617570
    • 2003-07-11
    • Susumu MizuharaArata NakamuraHiroaki Nakanishi
    • Susumu MizuharaArata NakamuraHiroaki Nakanishi
    • H01J4014
    • G01S17/026G01S7/487H03K17/941
    • A photoelectric sensor has an emitting device for emitting radiation pulses repeatedly and a receiving device for receiving these pulses. The receiving device includes a converter such as a photoelectric converter to convert the received radiation pulses into electrical pulses. On the basis of a known waveform characteristic or characteristics of true electrical pulse it is judged if a pulse which appears on the output line of the converter is a true electrical pulse caused by receiving the radiation pulse emitted from the emitting device or a false electrical pulse caused by noise. The result of this judgment is outputted from an output device. The emitting device may serve to emit the pulses according to a specified bit pattern and the receiving device may serve to compare the pattern of received pulses simultaneously with two or more standard bit patterns and to thereby distinguish between true and false electrical pulses.
    • 光电传感器具有重复发射辐射脉冲的发射装置和用于接收这些脉冲的接收装置。 接收装置包括诸如光电转换器的转换器,以将接收到的辐射脉冲转换成电脉冲。 基于已知的波形特性或真电脉冲的特性,判断出现在转换器的输出线上的脉冲是否是由接收从发射装置发射的辐射脉冲或假电脉冲引起的真电脉冲 造成噪音 该判断结果从输出装置输出。 发射装置可以用于根据指定的位模式发射脉冲,并且接收装置可以用于将接收到的脉冲的模式与两个或更多个标准位模式同时比较,从而区分真实和错误的电脉冲。