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1. 发明授权

US07759209B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07759209B2
公开(公告)日：2010-07-20
申请号：US11700865
申请日：2007-02-01
申请人： Satoru Machida , Yasushi Ishii , Toshio Kudo , Masato Takahashi , Yukihiro Suzuki
发明人： Satoru Machida , Yasushi Ishii , Toshio Kudo , Masato Takahashi , Yukihiro Suzuki
IPC分类号： H01L29/76
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/105 , H01L27/11573 , H01L29/42344
摘要： A memory cell has a control gate electrode disposed on a main surface of a semiconductor substrate through a gate insulating film, an ONO film disposed along a side surface of the control gate electrode and the main surface of semiconductor substrate, a memory gate electrode disposed on a side surface of the control gate electrode and also on the main surface of the semiconductor substrate through the ONO film. The control gate electrode and the memory gate electrode are formed, over the upper portions thereof, with a silicide film and an insulating film formed by oxidation of the surface of the silicide film, respectively.
摘要翻译：存储单元具有通过栅极绝缘膜设置在半导体衬底的主表面上的控制栅极电极，沿着控制栅电极的侧表面和半导体衬底的主表面设置的ONO膜，设置在栅极绝缘膜上的存储栅电极控制栅电极的侧表面以及通过ONO膜在半导体衬底的主表面上。控制栅电极和存储栅电极在其上部分别形成有硅化物膜和通过硅化物膜的表面氧化形成的绝缘膜。

2. 发明申请

US20070215930A1 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070215930A1
公开(公告)日：2007-09-20
申请号：US11700865
申请日：2007-02-01
申请人： Satoru Machida , Yasushi Ishii , Toshio Kudo , Masato Takahashi , Yukihiro Suzuki
发明人： Satoru Machida , Yasushi Ishii , Toshio Kudo , Masato Takahashi , Yukihiro Suzuki
IPC分类号： H01L29/76
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/105 , H01L27/11573 , H01L29/42344
摘要： A memory cell has a control gate electrode disposed on a main surface of a semiconductor substrate through a gate insulating film, an ONO film disposed along a side surface of the control gate electrode and the main surface of semiconductor substrate, a memory gate electrode disposed on a side surface of the control gate electrode and also on the main surface of the semiconductor substrate through the ONO film. The control gate electrode and the memory gate electrode are formed, over the upper portions thereof, with a silicide film and an insulating film formed by oxidation of the surface of the silicide film, respectively.
摘要翻译：存储单元具有通过栅极绝缘膜设置在半导体衬底的主表面上的控制栅极电极，沿着控制栅电极的侧表面和半导体衬底的主表面设置的ONO膜，设置在栅极绝缘膜上的存储栅电极控制栅电极的侧表面以及通过ONO膜在半导体衬底的主表面上。控制栅电极和存储栅电极在其上部分别形成有硅化物膜和通过硅化物膜的表面氧化形成的绝缘膜。

3. 发明申请

US20110205132A1 WIDEBAND ANTENNA 失效
标题翻译：宽带天线
公开(公告)号：US20110205132A1
公开(公告)日：2011-08-25
申请号：US13124267
申请日：2009-10-14
申请人： Toshio Kudo , Shoji Nasu , Kazuyuki Kashihara , Toshiyuki Baba
发明人： Toshio Kudo , Shoji Nasu , Kazuyuki Kashihara , Toshiyuki Baba
IPC分类号： H01Q1/36 , H01Q1/32 , H01Q5/00
CPC分类号： H01Q1/1271 , H01Q1/3291 , H01Q9/285
摘要： Disclosed is an antenna capable of receiving a very wide band of frequencies. The antenna includes a pair of antenna elements and a pair of feeding legs, which are arranged symmetrically with respect to a line L, with a narrow space G in between.
摘要翻译：公开了能够接收非常宽的频带的天线。天线包括一对天线元件和一对相对于线L对称布置的馈电支脚，其间具有窄空间G.

4. 发明授权

US07635475B2 Diabody-type bispecific antibody 失效
标题翻译：双抗体型双特异性抗体
公开(公告)号：US07635475B2
公开(公告)日：2009-12-22
申请号：US10642284
申请日：2003-08-18
申请人： Izumi Kumagai , Toshio Kudo , Kouhei Tsumoto , Ryutaro Asano
发明人： Izumi Kumagai , Toshio Kudo , Kouhei Tsumoto , Ryutaro Asano
IPC分类号： A61K39/395 , C12P21/08
CPC分类号： C07K16/2863 , A61K2039/505 , C07K16/2809 , C07K2317/24 , C07K2317/56 , C07K2317/626
摘要： The purpose of the present invention is to provide a diabody-type bispecific antibody, which is characterized by having low immunogenicity and high infiltrating activity into tumor tissues, and by being easily mass-produced at a low cost with use of microorganisms, and by being easily altered in function by means of genetic engineering. The diabody-type bispecific antibody shows a more remarkable effect than the conventional diabody-type bispecific antibodies and chemically synthesized bispecific antibodies even in a very low concentration and in the absence of the super antigen. The present invention is related to a diabody-type bispecific antibody, having a first specificity to a human epidermal growth factor (EGF) receptor and a second specificity to a surface antigen expressed by a cell having phagocytosis or cytotoxic activity, a single-chain polypeptide constituting the antibody or each region contained therein, a nucleic acid encoding the polypeptide, a replicable cloning vector or expression vector comprising the nucleic acid, a host cell transformed with the vector, and a pharmaceutical preparation comprising thereof.
摘要翻译：本发明的目的是提供一种双抗体型双特异性抗体，其特征在于对肿瘤组织具有低的免疫原性和高的渗透活性，并且通过使用微生物容易地以低成本批量生产，并且通过通过遗传工程容易地改变功能。双抗体双特异性抗体比常规的双抗体型双特异性抗体和化学合成的双特异性抗体甚至在非常低的浓度和不存在超抗原的情况下显示出更显着的效果。本发明涉及对人表皮生长因子（EGF）受体具有第一特异性的双抗体型双特异性抗体和由具有吞噬作用或细胞毒活性的细胞表达的表面抗原的第二特异性，单链多肽构成抗体或其中包含的每个区域，编码多肽的核酸，可复制的克隆载体或包含该核酸的表达载体，用该载体转化的宿主细胞及其包含的药物制剂。

5. 发明授权

US5681729A Methods for producing human lymphocytes and human monoclonal antibodies, and human monoclonal antibodies produced thereby 失效
标题翻译：用于产生人淋巴细胞和人单克隆抗体的方法以及由此产生的人单克隆抗体
公开(公告)号：US5681729A
公开(公告)日：1997-10-28
申请号：US969336
申请日：1992-10-30
申请人： Toshio Kudo , Shuichi Hiyamuta , Toshiyuki Tanedani , Akihiko Kadota
发明人： Toshio Kudo , Shuichi Hiyamuta , Toshiyuki Tanedani , Akihiko Kadota
IPC分类号： A01K67/027 , A61K38/00 , C07K16/00 , C07K16/18 , C07K16/30 , C12N5/08 , C12N5/28 , C12N15/85 , C12P21/08 , G01N33/574 , C12N15/07
CPC分类号： A01K67/0271 , C07K16/00 , C07K16/18 , C07K16/30 , C12N15/8509 , A01K2217/05 , A01K2227/105 , A01K2267/01 , A01K2267/0381 , A61K38/00 , C07K2317/21
摘要： A method for isolating a human lymphocyte producing an antibody specific to a desired antigen, a method for isolating a monoclonal antibody, as well as monoclonal antibodies produced by the method, are described. The present invention provides a method for isolating a human lymphocyte producing an antibody comprising, in the order mentioned, the steps of: transplanting human lymphocytes into an immunodeficient animal so that the human lymphocytes take in the animal body; immunizing the animal with a desired antigen so as to generate human lymphocytes producing an antibody specific to the antigen; recovering lymphocytes producing antibody by incubating with anti-mouse antibody; and separating human lymphocytes from mouse by centrifugation. The present invention also provides a method for producing a monoclonal antibody comprising, in the order mentioned, the steps of: immortalizing the human lymphocytes producing the antibody which were obtained by the above-mentioned method of the present invention; cloning the obtained immortalized human-derived lymphocytes producing the antibody; and recovering a monoclonal antibody specific to the desired antigen from the cloned immortalized human-derived lymphocytes.
摘要翻译：描述了分离产生对所需抗原特异性抗体的人淋巴细胞的方法，分离单克隆抗体的方法以及通过该方法产生的单克隆抗体。本发明提供一种用于分离产生抗体的人淋巴细胞的方法，其包括以下步骤：将人淋巴细胞移植到免疫缺陷型动物中，使得人淋巴细胞摄入动物体内; 用所需抗原免疫动物，以产生产生抗原特异性抗体的人淋巴细胞; 通过与抗小鼠抗体孵育来回收产生抗体的淋巴细胞; 并通过离心从小鼠分离人淋巴细胞。本发明还提供一种单克隆抗体的制备方法，其特征在于，按照上述顺序，通过上述本发明方法获得的产生抗体的人淋巴细胞的永生化步骤; 克隆获得的产生抗体的永生化的人源性淋巴细胞; 并从克隆的永生化人源性淋巴细胞中回收对所需抗原特异性的单克隆抗体。

6. 发明申请

US20070058179A1 Image processing apparatus and method for image resizing matching data supply speed 审中-公开
公开(公告)号：US20070058179A1
公开(公告)日：2007-03-15
申请号：US11360603
申请日：2006-02-24
申请人： Kenichiro Kuroki , Toshio Kudo
发明人： Kenichiro Kuroki , Toshio Kudo
IPC分类号： G06K15/02
CPC分类号： H04N1/3935 , G06T3/4007 , H04N5/23296 , H04N5/2628
摘要： An image processing apparatus includes a data supply node to receive line data scanned in a main scan direction of an image, an image enlargement unit coupled to the data supply node to apply to the line data an enlargement process for enlarging the image by an enlargement factor equal to an integer so as to produce enlarged data at an output node, and an image reduction unit coupled to the output node of the image enlargement unit to apply to the enlarged data a reduction process for reducing the enlarged image by a desired reduction factor so as to produce reduced data at an output node.

7. 发明申请

US20060210564A1 Novel diabody-type bispecific antibody 失效
标题翻译：新型双抗体型双特异性抗体
公开(公告)号：US20060210564A1
公开(公告)日：2006-09-21
申请号：US10642284
申请日：2003-08-18
申请人： Izumi Kumagai , Toshio Kudo , Kouhei Tsumoto , Ryutaro Asano
发明人： Izumi Kumagai , Toshio Kudo , Kouhei Tsumoto , Ryutaro Asano
IPC分类号： A61K39/395 , C07H21/04 , C12P21/06 , C12N15/74 , C12N1/21 , C07K16/24
CPC分类号： C07K16/2863 , A61K2039/505 , C07K16/2809 , C07K2317/24 , C07K2317/56 , C07K2317/626
摘要： The purpose of the present invention is to provide a diabody-type bispecific antibody, which is characterized by having low immunogenicity and high infiltrating activity into tumor tissues, and by being easily mass-produced at a low cost with use of microorganisms, and by being easily altered in function by means of genetic engineering. The diabody-type bispecific antibody shows a more remarkable effect than the conventional diabody-type bispecific antibodies and chemically synthesized bispecific antibodies even in a very low concentration and in the absence of the super antigen. The present invention is related to a diabody-type bispecific antibody, having a first specificity to a human epidermal growth factor (EGF) receptor and a second specificity to a surface antigen expressed by a cell having phagocytosis or cytotoxic activity, a single-chain polypeptide constituting the antibody or each region contained therein, a nucleic acid encoding the polypeptide, a replicable cloning vector or expression vector comprising the nucleic acid, a host cell transformed with the vector, and a pharmaceutical preparation comprising thereof.
摘要翻译：本发明的目的是提供一种双抗体型双特异性抗体，其特征在于对肿瘤组织具有低的免疫原性和高的渗透活性，并且通过使用微生物容易地以低成本批量生产，并且通过通过遗传工程容易地改变功能。双抗体双特异性抗体比常规的双抗体型双特异性抗体和化学合成的双特异性抗体甚至在非常低的浓度和不存在超抗原的情况下显示出更显着的效果。本发明涉及对人表皮生长因子（EGF）受体具有第一特异性的双抗体型双特异性抗体和由具有吞噬作用或细胞毒活性的细胞表达的表面抗原的第二特异性，单链多肽构成抗体或其中包含的每个区域，编码多肽的核酸，可复制的克隆载体或包含该核酸的表达载体，用该载体转化的宿主细胞及其包含的药物制剂。

8. 发明申请

US20060183350A1 Process for fabricating semiconductor device 有权
标题翻译：半导体器件制造工艺
公开(公告)号：US20060183350A1
公开(公告)日：2006-08-17
申请号：US11292072
申请日：2005-12-02
申请人： Toshio Kudo , Bunji Mizuno , Yuichiro Sasaki , Cheng Jin
发明人： Toshio Kudo , Bunji Mizuno , Yuichiro Sasaki , Cheng Jin
IPC分类号： H01L21/20 , H01L21/324
CPC分类号： H01L21/26506 , H01L21/2236 , H01L21/26513 , H01L21/268 , H01L29/6659
摘要： A laser annealing process capable of suppressing a variation in sheet resistance. A surface layer formed shallower than 100 nm in a substrate of semiconductor material is added with impurities. The substrate is irradiated with a laser beam or its harmonic beam emitted from a laser diode pumped to solid-state laser to activate the impurities.
摘要翻译：能够抑制薄层电阻变化的激光退火工艺。在半导体材料的衬底中形成的比100nm浅的表面层添加有杂质。用从激光二极管发射到激光二极管的激光束或其谐波束照射衬底以激活杂质。

9. 发明授权

US5708435A Multilayer wave absorber 失效
标题翻译：多层波浪吸收器
公开(公告)号：US5708435A
公开(公告)日：1998-01-13
申请号：US589945
申请日：1996-01-23
申请人： Toshio Kudo , Hideaki Tamura , Kenichi Noda
发明人： Toshio Kudo , Hideaki Tamura , Kenichi Noda
IPC分类号： H05K9/00 , H01Q17/00
CPC分类号： H01Q17/00
摘要： A wave absorber comprising a sintered ferrite tile wave absorber as a base substrate lowermost relative to the incident wave, and one or more laminates comprising two layers as one set, with a dielectric layer as a lower layer and a dielectric loss-causing layer as an upper layer, laminated on the base substrate. The wave absorber of the present invention is thin, but is capable of absorbing waves over wide frequency bands of from tens of megahertz to a dozen or so gigahertz. By making the absorber thin, the absorber weighs less and is easy to handle, which in turn leads to fine workability and low construction cost.
摘要翻译：一种波形吸收体，其特征在于，包括作为基底基板的烧结铁氧体磁阻波浪吸收体相对于入射波最低的一个波长吸收体，以及一个或多个层叠体，其包含两层作为一组，其中介电层为下层，介电损耗层为上层，层压在基底上。本发明的吸波体较薄，但能够在数十兆赫兹到十几千兆赫兹的宽频带上吸收波。通过使吸收体变薄，吸收体重量少，易于处理，反而导致加工性能好，施工成本低。

10. 发明授权

US5635310A ZnS dielectric thin film and magnetic recording medium 失效
标题翻译： ZnS介电薄膜和磁记录介质
公开(公告)号：US5635310A
公开(公告)日：1997-06-03
申请号：US296872
申请日：1994-08-26
申请人： Toshio Kudo , Kunio Ichiji , Hiroyasu Jobetto
发明人： Toshio Kudo , Kunio Ichiji , Hiroyasu Jobetto
IPC分类号： C09D5/23 , G11B7/254 , G11B7/257 , G11B11/105 , C09D1/00 , G11B5/66 , G11B5/70
CPC分类号： G11B7/2578 , G11B11/10584 , G11B11/10586 , G11B7/2548 , G11B2007/25411 , G11B2007/25706 , G11B2007/25713 , G11B2007/25715 , G11B2007/25716 , G11B7/2534 , Y10S428/90
摘要： A zinc sulfide thin film containing oxygen or oxygen and nitrogen has a high refractive index, a high transmittance, and a high Kerr rotation angle enhancing performance. The zinc sulfide thin film is manufactured by sputtering a zinc sulfide sintered product containing oxygen in an argon gas atmosphere or a gas mixture atmosphere of argon gas and nitrogen gas.
摘要翻译：含有氧或氧和氮的硫化锌薄膜具有高折射率，高透射率和高克尔旋转角增强性能。硫化锌薄膜通过在氩气气氛或氩气和氮气的气体混合气氛中溅射含有氧的硫化锌烧结体来制造。

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