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1. 发明授权

US06399520B1 Semiconductor manufacturing method and semiconductor manufacturing apparatus 失效
标题翻译：半导体制造方法和半导体制造装置
公开(公告)号：US06399520B1
公开(公告)日：2002-06-04
申请号：US09521601
申请日：2000-03-09
申请人： Satoru Kawakami , Shigemi Murakawa , Mitsuhiro Yuasa , Toshiaki Hongoh
发明人： Satoru Kawakami , Shigemi Murakawa , Mitsuhiro Yuasa , Toshiaki Hongoh
IPC分类号： H01L2131
CPC分类号： H01J37/32192 , H01L21/0214 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02238 , H01L21/02249 , H01L21/02252 , H01L21/02255 , H01L21/02274 , H01L21/02332 , H01L21/02337 , H01L21/3144 , H01L21/31662 , H01L21/3185
摘要： In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA 60 having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film 2 of a thickness of 1 nm or less in terms of oxide film. A manufacturing method and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.
摘要翻译：在处理气体的气氛中，在主要由硅构成的晶片W上，通过具有多个狭缝的平面阵列天线RLSA 60，照射微波以产生含有氧或氮或氧和氮的等离子体并与其一起实施在晶片W的表面上直接进行氧化，氮化或氧氮化，从而以氧化物膜形成厚度为1nm以下的绝缘膜2。可以获得能够成功地调节硅衬底和SiN膜之间的界面的膜质量并且可以在短时间内形成高质量的SiN膜的半导体的制造方法和装置。

2. 发明授权

US06470824B2 Semiconductor manufacturing apparatus 失效
标题翻译：半导体制造装置
公开(公告)号：US06470824B2
公开(公告)日：2002-10-29
申请号：US10123485
申请日：2002-04-17
申请人： Satoru Kawakami , Shigemi Murakawa , Mitsuhiro Yuasa , Toshiaki Hongoh
发明人： Satoru Kawakami , Shigemi Murakawa , Mitsuhiro Yuasa , Toshiaki Hongoh
IPC分类号： C23C1600
CPC分类号： H01J37/32192 , H01L21/0214 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02238 , H01L21/02249 , H01L21/02252 , H01L21/02255 , H01L21/02274 , H01L21/02332 , H01L21/02337 , H01L21/3144 , H01L21/31662 , H01L21/3185
摘要： In an atmosphere of processing gas, on a wafer W consisting mainly of silicon, through a planar-array antenna RLSA 60 having a plurality of slits, microwaves are irradiated to generate plasma containing oxygen, or nitrogen, or oxygen and nitrogen and to implement therewith on the surface of the wafer W direct oxidizing, nitriding, or oxy-nitriding to deposit an insulator film 2 of a thickness of 1 nm or less in terms of oxide film. A manufacturing method to and apparatus of semiconductors that can successfully regulate film quality of the interface between a silicon substrate and a SiN film and can form SiN film of high quality in a short time can be obtained.
摘要翻译：在处理气体的气氛中，在主要由硅构成的晶片W上，通过具有多个狭缝的平面阵列天线RLSA 60，照射微波以产生含有氧或氮或氧和氮的等离子体并与其一起实施在晶片W的表面上直接进行氧化，氮化或氧氮化，从而以氧化物膜形成厚度为1nm以下的绝缘膜2。可以获得能够成功地调节硅衬底和SiN膜之间的界面的膜质量并且可以在短时间内形成高质量的SiN膜的半导体的制造方法和装置。

3. 发明授权

US06358324B1 Microwave plasma processing apparatus having a vacuum pump located under a susceptor 有权
标题翻译：具有位于基座下方的真空泵的微波等离子体处理装置
公开(公告)号：US06358324B1
公开(公告)日：2002-03-19
申请号：US09559750
申请日：2000-04-27
申请人： Toshiaki Hongoh , Tetsu Oosawa , Satoru Kawakami , Mitsuhiro Yuasa
发明人： Toshiaki Hongoh , Tetsu Oosawa , Satoru Kawakami , Mitsuhiro Yuasa
IPC分类号： C23C1600
CPC分类号： H01J37/32834 , C23C16/0209 , C23C16/4583 , C23C16/511 , H01J37/32192 , H01J37/3222
摘要： A microwave plasma processing apparatus has a process chamber in which an object to be processed is subjected to plasma processing under a predetermined negative pressure environment. A susceptor holding the object thereon is provided in the process chamber. The susceptor is moved by a susceptor moving member which is moved by a susceptor moving mechanism located outside the process chamber. The susceptor moving member extends from the process chamber via a bellows provided to a bottom of the process chamber. The bellows allows a vertical movement of the susceptor moving member while providing a hermetic seal to the process chamber to maintain the predetermined negative pressure environment in the process chamber. A vacuum pump is provided to the bottom of the process chamber so that an inlet opening of the vacuum pump aligns with the susceptor in the vertical direction.
摘要翻译：微波等离子体处理装置具有处理室，在该处理室中，在预定的负压环境下对被处理物进行等离子体处理。在处理室中设置有保持物体的基座。基座由基座移动构件移动，基座移动构件由位于处理室外的基座移动机构移动。基座移动构件通过设置在处理室底部的波纹管从处理室延伸。波纹管允许基座移动构件的垂直移动，同时向处理室提供气密密封，以保持处理室中的预定负压环境。真空泵设置在处理室的底部，使得真空泵的入口在垂直方向上与基座对准。

4. 发明授权

US08010228B2 Process monitoring apparatus and method for monitoring process 有权
标题翻译：过程监控设备及监控过程方法
公开(公告)号：US08010228B2
公开(公告)日：2011-08-30
申请号：US11819928
申请日：2007-06-29
申请人： Mitsuhiro Yuasa
发明人： Mitsuhiro Yuasa
IPC分类号： G06F7/66
CPC分类号： H01L21/67253 , H01L22/32 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： A sensor on a semiconductor wafer is used as a process monitor and a capacitor is employed as a power supply for the sensor. The capacitor can be formed by stacking a poly-silicon layer and a silicon nitride layer on the wafer. A timer can be used to specify an operation time or an operation timing, etc. Furthermore, unauthorized use is prevented by storing a keyword in an ROM of the process monitor.
摘要翻译：将半导体晶片上的传感器用作过程监视器，并且使用电容器作为用于传感器的电源。可以通过在晶片上堆叠多晶硅层和氮化硅层来形成电容器。可以使用定时器来指定操作时间或操作定时等。此外，通过将关键字存储在处理监视器的ROM中来防止未经授权的使用。

5. 发明授权

US07303928B2 Process monitor and system for producing semiconductor 有权
标题翻译：半导体生产过程监控和系统
公开(公告)号：US07303928B2
公开(公告)日：2007-12-04
申请号：US10532991
申请日：2003-09-30
申请人： Mitsuhiro Yuasa
发明人： Mitsuhiro Yuasa
IPC分类号： H01L21/00 , H01L21/66 , G01R31/26
CPC分类号： H01L21/67253 , H01L22/32 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： A sensor on a semiconductor wafer is used as a process monitor and a capacitor is employed as a power supply for the sensor. The capacitor can be formed by stacking a poly-silicon layer and a silicon nitride layer on the wafer. A timer can be used to specify an operation time or an operation timing, etc. Furthermore, unauthorized use is prevented by storing a keyword in an ROM of the process monitor.
摘要翻译：将半导体晶片上的传感器用作过程监视器，并且使用电容器作为用于传感器的电源。可以通过在晶片上堆叠多晶硅层和氮化硅层来形成电容器。可以使用定时器来指定操作时间或操作定时等。此外，通过将关键字存储在处理监视器的ROM中来防止未经授权的使用。

6. 发明授权

US07112926B2 Matching unit and plasma processing system 有权
标题翻译：匹配单元和等离子体处理系统
公开(公告)号：US07112926B2
公开(公告)日：2006-09-26
申请号：US10120526
申请日：2002-04-12
申请人： Shinji Himori , Mitsuhiro Yuasa , Kazuyoshi Watanabe , Jun'ichi Shimada
发明人： Shinji Himori , Mitsuhiro Yuasa , Kazuyoshi Watanabe , Jun'ichi Shimada
IPC分类号： H05H1/24
CPC分类号： H01J37/32174 , H01J37/32082 , H01J37/32183 , H05H1/46
摘要： There are provided a matching unit capable of sufficiently matching the impedance of a high frequency load to a transmission path impedance without increasing its size and matching time even if a high frequency power of 70 MHz or higher is supplied thereto, and a plasma processing system using the same. A matching unit 41 comprises: a resonance rod 61 for transmitting a high frequency energy from a high frequency power supply 40 to a plasma producing electrode; a variable capacitor 62, connected to the resonance rod 61 and an electrode 21 in series, for adjusting the imaginary part of an impedance complex number; a housing 63 which is provided outside of the resonance rod 61 and which is grounded; a link coil 64 for exciting a high frequency energy to the resonance rod 61 and for adjusting the real part of the impedance complex number; and a controller 69 for controlling a driving part for the variable capacitor 62 and the link coil 64 so that a series resonance circuit is formed between the high frequency power supply 40 and the ground via plasma in a matching state.
摘要翻译：提供了一种能够将高频负载的阻抗充分地匹配到传输路径阻抗而不增加其尺寸和匹配时间的匹配单元，即使提供70MHz或更高的高频功率，以及使用等离子体处理系统一样。匹配单元41包括：用于将高频能量从高频电源40传输到等离子体产生电极的共振杆61; 连接到共振杆61的可变电容器62和串联的电极21，用于调节阻抗复数的虚部; 壳体63，其设置在共振杆61的外部并接地; 用于激励共振杆61的高频能量并用于调整阻抗复数的实部的链路线圈64; 以及用于控制可变电容器62和链接线圈64的驱动部分的控制器69，使得在匹配状态下通过等离子体在高频电源40和接地之间形成串联谐振电路。

7. 发明授权

US07237606B2 Wafer supporter 失效
标题翻译：晶圆支架
公开(公告)号：US07237606B2
公开(公告)日：2007-07-03
申请号：US10480460
申请日：2002-06-12
申请人： Mitsuhiro Yuasa , Keiichi Enjoji , Koji Homma
发明人： Mitsuhiro Yuasa , Keiichi Enjoji , Koji Homma
IPC分类号： F28F7/20 , F28D15/00
CPC分类号： H01L21/68757 , C23C16/4581 , C30B25/12 , C30B31/14 , H01L21/67103 , H01L21/67294 , H01L21/6835 , H01L2221/68313
摘要： A wafer supporting unit (10) includes a base (12) and a thermally conductive member (14). The base is formed by nickel material. The thermally conductive member is formed in the shape of a lamina, includes silicone rubber (16) serving as the main material, and Ag fine powder (18) is blended with the silicone rubber. The Ag fine powder is blended with high density in part of the thermally conductive member, and a plurality of pillar-shaped regions (20) is formed with one end facing the bottom, and with the other end facing the top. The wafer supporting unit does not produce curvature in a wafer, and provides efficient cooling of the wafer, and does not cause heat degradation in a thermally conductive member prepared on the rear side of the wafer during processing.
摘要翻译：晶片支撑单元（10）包括基座（12）和导热构件（14）。基体由镍材料形成。导热构件形成为薄片形状，包括用作主要材料的硅橡胶（16），和Ag细粉末（18）与硅橡胶共混。在导热部件的一部分中，Ag细粉末以高密度混合，并且形成多个柱状区域（20），其一端面向底部，另一端面向顶部。晶片支撑单元在晶片中不产生曲率，并且提供晶片的有效冷却，并且不会在加工期间在晶片的后侧准备的导热部件中导致热劣化。

8. 发明授权

US07180425B2 Drop detection device or abnormality detection device and portable apparatus equipped with said device 失效
标题翻译：跌落检测装置或异常检测装置以及配备有所述装置的便携式装置
公开(公告)号：US07180425B2
公开(公告)日：2007-02-20
申请号：US10942812
申请日：2004-09-17
申请人： Mitsuhiro Yuasa
发明人： Mitsuhiro Yuasa
IPC分类号： G08B21/00
CPC分类号： G01P15/123 , G01P1/127 , G01P15/0891 , G01P15/18 , G01P2015/084 , H04M1/72522 , H04M2250/12
摘要： The invention is aimed at preventing apparatus damage, loss of data, accidental firing of a firearm due to dropping or subjection to an impact, and other mishaps caused by accidental dropping or improper handling of the apparatus, firearm, etc. due to carelessness on the side of users. To achieve this, a drop detecting means is provided that detects the dropping of the apparatus when the apparatus is dropped, and control is performed so as to set the apparatus in a safe condition in response to a drop detection signal supplied by the drop detecting means.
摘要翻译：本发明的目的在于防止装置的损坏，数据的丢失，由于掉落或受到冲击而引起的火器的意外点火，以及由于意外掉落或由于不正当的装置，枪支等引起的其他事故用户侧为了实现这一点，提供了一种液滴检测装置，用于当装置掉落时检测装置的掉落，并且执行控制以便根据由液滴检测装置提供的液滴检测信号将装置设置在安全状态。

9. 发明申请

US20060234512A1 Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20060234512A1
公开(公告)日：2006-10-19
申请号：US11453887
申请日：2006-06-16
申请人： Mitsuhiro Yuasa , Koji Homma
发明人： Mitsuhiro Yuasa , Koji Homma
IPC分类号： H01L21/302
CPC分类号： H01L21/6836 , H01J37/32192 , H01J37/32357 , H01J37/32366 , H01L21/304 , H01L21/3065 , H01L21/6835 , H01L21/78 , H01L2221/68327
摘要： A plasma processing apparatus and method preferably used when processing a wafer by means of plasma etching, able to prevent contamination of a wafer or a chamber. The plasma processing apparatus converts a process gas into plasma, sprays the process gas from a spray nozzle 24a to a wafer 2 installed on an XYZ table 28, and processes the wafer 2. As the process gas, use is made of a mixture of SF6 (sulfur hexafluoride) gas, Ar (Argon) gas, and O2 (oxygen) gas, and the volume ratio of the O2 (oxygen) gas to the SF6 gas is in a range from 11% to 25%.
摘要翻译：在通过等离子体蚀刻处理晶片时优选使用等离子体处理装置和方法，能够防止晶片或室的污染。等离子体处理装置将处理气体转换成等离子体，将处理气体从喷嘴24a喷射到安装在XYZ台28上的晶片2，并处理晶片2。作为工艺气体，使用SF 6（六氟化硫）气体，Ar（氩）气体和O 2（氧）气体的混合物，并且 O 2（氧）气体与SF 6气体的体积比在11％至25％的范围内。

10. 发明授权

US06737812B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06737812B2
公开(公告)日：2004-05-18
申请号：US10192564
申请日：2002-07-11
申请人： Mitsuhiro Yuasa , Koji Homma
发明人： Mitsuhiro Yuasa , Koji Homma
IPC分类号： H05B3126
CPC分类号： H01J37/32192 , H01J37/32357 , H01J37/32366
摘要： A plasma processing apparatus processing a surface of a substrate by spraying a process gas in a plasma state from a gas spray opening of a spray nozzle onto the substrate includes: an exhaust opening for exhausting residual gas generated at the time of processing the surface of the substrate, the exhaust opening being provided at a position close to the periphery of the gas spray opening; and an air jet opening generating airflow, the air jet opening being provided surrounding the exhaust opening so as to prevent the residual gas from flowing out.
摘要翻译：一种等离子体处理装置，其通过从喷雾器的气体喷射口喷射等离子体状态的处理气体而对基板的表面进行处理，其特征在于，包括：排出开口，用于排出在处理所述基板的表面时产生的残留气体基板，排气口设置在靠近气体喷射口周边的位置; 以及产生气流的空气喷射口，所述空气喷射口设置在所述排气口周围，以防止残留气体流出。

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