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1. 发明申请

US20060044707A1 Magnetic tunnel junction with in stack biasing layer providing orthogonal exchange coupling 失效
标题翻译：具有堆叠偏置层的磁隧道结，提供正交交换耦合
公开(公告)号：US20060044707A1
公开(公告)日：2006-03-02
申请号：US10931677
申请日：2004-08-31
申请人： Satoru Araki , Jeffrey Childress , Stefan Maat , Daniele Mauri
发明人： Satoru Araki , Jeffrey Childress , Stefan Maat , Daniele Mauri
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/098 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive sensor having an in stack bias structure. The sensor includes a bias spacer that allows biasing of free layer magnetic moment in a direction orthogonal to the magnetic moment of the biasing layer.
摘要翻译：具有堆叠偏压结构的磁阻传感器。传感器包括偏置间隔件，其允许在与偏压层的磁矩正交的方向上偏置自由层磁矩。

2. 发明授权

US07446986B2 Magnetic tunnel junction with in stack biasing layer providing orthogonal exchange coupling 失效
标题翻译：具有堆叠偏置层的磁隧道结，提供正交交换耦合
公开(公告)号：US07446986B2
公开(公告)日：2008-11-04
申请号：US10931677
申请日：2004-08-31
申请人： Satoru Araki , Jeffrey Robinson Childress , Stefan Maat , Daniele Mauri , Matthew Joseph Carey
发明人： Satoru Araki , Jeffrey Robinson Childress , Stefan Maat , Daniele Mauri , Matthew Joseph Carey
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/098 , G11B5/3909 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive sensor having an in stack bias structure. The sensor includes a bias spacer that allows biasing of free layer magnetic moment in a direction orthogonal to the magnetic moment of the biasing layer.
摘要翻译：具有堆叠偏压结构的磁阻传感器。传感器包括偏置间隔件，其允许在与偏压层的磁矩正交的方向上偏置自由层磁矩。

3. 发明授权

US08675316B2 Magnetoresistive sensor with sub-layering of pinned layers 有权
标题翻译：磁阻传感器，分层钉扎层
公开(公告)号：US08675316B2
公开(公告)日：2014-03-18
申请号：US12101761
申请日：2008-04-11
申请人： Wen-yaung Lee , Daniele Mauri , Alexander M. Zeltser
发明人： Wen-yaung Lee , Daniele Mauri , Alexander M. Zeltser
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F41/307 , H01L43/08
摘要： Methods and apparatus provide magnetoresistance sensors. A tunneling magnetoresistance (TMR) sensor may include configurations that are arranged as a top TMR stack. One of two antiparallel layers of pinned layers within the TMR stack may be subdivided by a spacer layer. Tantalum may form the spacer layer that is inserted in a reference layer, which is one of the pinned layers and is located between a barrier layer and an antiparallel coupling layer that enables antiparallel coupling between the reference layer and a keeper layer of the pinned layers. The barrier layer deposited on a free layer of the TMR stacks separates the pinned layers from the free layer such that TMR effects are detectable with the sensors.
摘要翻译：方法和装置提供磁阻传感器。隧道磁阻（TMR）传感器可以包括被布置为顶部TMR堆叠的配置。 TMR堆叠中的钉扎层的两个反平行层之一可以被间隔层细分。钽可以形成插入到参考层中的间隔层，该参考层是被钉扎层之一，并且位于阻挡层和反平行耦合层之间，其使参考层和被钉扎层的保持层之间能够反平行耦合。沉积在TMR堆叠的自由层上的阻挡层将被钉扎层与自由层分离，使得TMR效应可以用传感器检测。

4. 发明授权

US08611054B1 Antiferromagnetically-coupled soft bias magnetoresistive read head, and fabrication method therefore 有权
标题翻译：反铁磁耦合软偏置磁阻读头，因此制造方法
公开(公告)号：US08611054B1
公开(公告)日：2013-12-17
申请号：US13444723
申请日：2012-04-11
申请人： Changhe Shang , Daniele Mauri , Kuok San Ho , Anup G. Roy , Ming Mao
发明人： Changhe Shang , Daniele Mauri , Kuok San Ho , Anup G. Roy , Ming Mao
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , G01R33/093 , G11B5/3909 , G11B2005/3996 , H01F10/3218 , H01F10/3254
摘要： A magnetic read transducer is described with a magnetoresistive sensor that has a free layer, and an antiferromagnetically-coupled (AFC) soft bias layer for magnetically biasing the free layer. The free layer has a first edge in a track width direction along an air-bearing surface (ABS). At least a portion of the AFC soft bias layer is conformal to at least a portion of a second edge of the free layer, and situated to form a magnetic moment at an angle with respect to a center line of the free layer. The center line of the free layer extends in the same direction as the free layer first edge that is in the track width direction along the ABS.
摘要翻译：用具有自由层的磁阻传感器和用于磁偏置自由层的反铁磁耦合（AFC）软偏置层来描述磁读取传感器。自由层具有沿空气轴承表面（ABS）的轨道宽度方向上的第一边缘。 AFC柔性偏置层的至少一部分与自由层的第二边缘的至少一部分共形，并且位于相对于自由层的中心线形成一个角度的磁矩。自由层的中心线沿与ABS沿轨道宽度方向的自由层第一边缘相同的方向延伸。

5. 发明授权

US08493695B1 Method and system for providing a magnetic read transducer having an improved signal to noise ratio 有权
标题翻译：用于提供具有改善的信噪比的磁读取换能器的方法和系统
公开(公告)号：US08493695B1
公开(公告)日：2013-07-23
申请号：US13170506
申请日：2011-06-28
申请人： Christian Kaiser , Qunwen Leng , Mahendra Pakala , Daniele Mauri
发明人： Christian Kaiser , Qunwen Leng , Mahendra Pakala , Daniele Mauri
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , G01R33/093 , G01R33/098 , G11B5/3929 , H01F10/3272 , H01F41/325 , H01L43/08 , H01L43/12
摘要： A method and system for providing a magnetic read transducer is described. The magnetic read transducer includes a magnetoresistive sensor a shield, and a spin pumping barrier layer. The magnetoresistive sensor includes a pinned layer, a spacer layer, and a free layer. The spacer layer is nonmagnetic and resides between the pinned layer and the free layer. The free layer is between the pinned layer and the shield. The spin pumping barrier layer is between the shield and the free layer.
摘要翻译：描述了一种用于提供磁读取换能器的方法和系统。磁读取传感器包括屏蔽层的磁阻传感器和自旋泵浦阻挡层。磁阻传感器包括钉扎层，间隔层和自由层。间隔层是非磁性的并且位于被钉扎层和自由层之间。自由层位于钉扎层和屏蔽层之间。自旋泵浦阻挡层位于屏蔽层和自由层之间。

6. 发明授权

US08037593B2 Method for manufacturing an ultra narrow gap magnetoresistive sensor 有权
标题翻译：制造超窄间隙磁阻传感器的方法
公开(公告)号：US08037593B2
公开(公告)日：2011-10-18
申请号：US11966106
申请日：2007-12-28
申请人： Kuok San Ho , Ying Hong , Wipul Pemsiri Jayasekara , Daniele Mauri
发明人： Kuok San Ho , Ying Hong , Wipul Pemsiri Jayasekara , Daniele Mauri
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/398 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method for manufacturing a magnetoresistive sensor that decreases the stack height of the sensor. The method includes forming a sensor structure having at its top, a Ru layer and a Ta layer over the Ru layer. An annealing process is performed to set the magnetization of the pinned layer of the sensor structure. After the annealing process has been completed and the Ta layer is no longer needed, an ion milling process is performed to remove the Ta layer.
摘要翻译：一种降低传感器堆叠高度的磁阻传感器的制造方法。该方法包括形成传感器结构，其顶部具有在Ru层上的Ru层和Ta层。执行退火处理以设置传感器结构的钉扎层的磁化。在完成退火处理并且不再需要Ta层之后，执行离子铣削处理以去除Ta层。

7. 发明申请

US20090168254A1 Test device and method for measurement of tunneling magnetoresistance properties of a manufacturable wafer by the current-in-plane-tunneling technique 有权
标题翻译：用于通过平面内隧道技术测量可制造晶片的隧道磁阻特性的测试装置和方法
公开(公告)号：US20090168254A1
公开(公告)日：2009-07-02
申请号：US12006322
申请日：2007-12-31
申请人： Ying Hong , Wipul P. Jayasekara , Daniele Mauri , David J. Seagle
发明人： Ying Hong , Wipul P. Jayasekara , Daniele Mauri , David J. Seagle
IPC分类号： G11B5/33
CPC分类号： G11B5/3166 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3173 , G11B5/3906 , G11B5/3909
摘要： A combined manufacturable wafer and test device for measuring a tunneling-magnetoresistance property of a tunneling-magnetoresistance, sensor-layer structure. The combined manufacturable wafer and test device comprises a tunneling-magnetoresistance, sensor-layer structure disposed on a substrate. The combined manufacturable wafer and test device also comprises a plurality of partially fabricated tunneling-magnetoresistance sensors; at least one of the partially fabricated tunneling-magnetoresistance sensors is disposed at one of a plurality of first locations. The test device is disposed on the substrate at a second location different from the plurality of first locations. The test device allows measurement of the tunneling-magnetoresistance property of the tunneling-magnetoresistance, sensor-layer structure using a current-in-plane-tunneling technique.
摘要翻译：用于测量隧道 - 磁阻，传感器层结构的隧道 - 磁阻特性的组合制造晶片和测试装置。组合的可制造晶片和测试装置包括设置在基板上的隧道 - 磁阻，传感器层结构。组合的可制造晶片和测试装置还包括多个部分制造的隧道 - 磁阻传感器; 部分制造的隧道 - 磁阻传感器中的至少一个设置在多个第一位置中的一个位置。测试装置在不同于多个第一位置的第二位置处设置在基板上。测试装置允许使用平面内隧道技术测量隧道 - 磁阻，传感器层结构的隧道 - 磁阻特性。

8. 发明申请

US20070246761A1 ELECTRICAL LAPPING GUIDES MADE FROM TUNNELING MAGNETORESISTIVE (TMR) MATERIAL 失效
标题翻译：隧道磁铁（TMR）材料制成的电气导线
公开(公告)号：US20070246761A1
公开(公告)日：2007-10-25
申请号：US11379321
申请日：2006-04-19
申请人： Robert Beach , Daniele Mauri , David Seagle , Jila Tabib
发明人： Robert Beach , Daniele Mauri , David Seagle , Jila Tabib
IPC分类号： H01L29/94
CPC分类号： G11B5/3173 , B82Y10/00 , B82Y25/00 , G11B5/3169 , G11B5/3906 , G11B5/3909 , H01L43/12
摘要： Tunneling magnetoresistive (TMR) electrical lapping guides (ELG) are disclosed for use in wafer fabrication of magnetic sensing devices, such as magnetic recording heads using TMR read elements. A TMR ELG includes a TMR stack comprising a first conductive layer, a barrier layer, and a second conductive layer of TMR material. The TMR ELG also includes a first lead and a second lead that connect to conductive pads used for applying a sense current to the TMR ELG in a current in plane (CIP) fashion. The first lead contacts one side of the TMR stack so that the first lead contacts both the first conductive layer and the second conductive layer of the TMR stack. The second lead contacts the other side of the TMR stack so that the second lead contacts both the first conductive layer and the second conductive layer of the TMR stack.
摘要翻译：公开了隧道磁阻（TMR）电研磨引导件（ELG），用于磁感测装置的晶片制造，例如使用TMR读取元件的磁记录头。 TMR ELG包括TMR堆叠，其包括第一导电层，阻挡层和TMR材料的第二导电层。 TMR ELG还包括连接到用于以当前平面（CIP）方式向TMR ELG施加感测电流的导电焊盘的第一引线和第二引线。第一引线接触TMR堆叠的一侧，使得第一引线接触TMR堆叠的第一导电层和第二导电层。第二引线接触TMR堆叠的另一侧，使得第二引线接触TMR堆叠的第一导电层和第二导电层。

9. 发明授权

US07161771B2 Dual spin valve sensor with a longitudinal bias stack 失效
标题翻译：具有纵向偏置叠层的双自旋阀传感器
公开(公告)号：US07161771B2
公开(公告)日：2007-01-09
申请号：US10115825
申请日：2002-04-02
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3935 , G11B5/3954 , G11B5/3967 , G11B2005/0008
摘要： A dual spin valve (SV) sensor is provided with a longitudinal bias stack sandwiched between a first SV stack and a second SV stack. The longitudinal bias stack comprises an antiferromagnetic (AFM) layer sandwiched between first and second ferromagnetic layers. The first and second SV stacks comprise antiparallel (AP)-pinned layers pinned by AFM layers made of an AFM material having a higher blocking temperature than the AFM material of the bias stack allowing the AP-pinned layers to be pinned in a transverse direction and the bias stack to be pinned in a longitudinal direction. The demagnetizing fields of the two AP-pinned layers cancel each other and the bias stack provides flux closures for the sense layers of the first and second SV stacks.
摘要翻译：双自旋阀（SV）传感器设置有夹在第一SV堆叠和第二SV堆叠之间的纵向偏置堆叠。纵向偏置堆叠包括夹在第一和第二铁磁层之间的反铁磁（AFM）层。第一和第二SV堆叠包括由具有比偏置堆叠的AFM材料更高的阻挡温度的AFM材料制成的AFM层钉住的反平行（AP） - 镀层，其允许AP钉扎层在横向上被钉扎，偏置堆叠沿纵向方向固定。两个AP钉扎层的去磁场彼此抵消，并且偏置堆叠为第一和第二SV堆叠的感测层提供磁通闭合。

10. 发明授权

US06780524B2 In-situ oxidized films for use as gap layers for a spin-valve sensor and methods of manufacture 失效
标题翻译：用作自旋阀传感器的间隙层的原位氧化膜和制造方法
公开(公告)号：US06780524B2
公开(公告)日：2004-08-24
申请号：US10066835
申请日：2002-02-04
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , Y10T29/49044 , Y10T428/1129 , Y10T428/1164 , Y10T428/1171 , Y10T428/12549 , Y10T428/1259 , Y10T428/12611 , Y10T428/12646 , Y10T428/12667 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/12937 , Y10T428/24967 , Y10T428/265
摘要： Disclosed is a spin-valve sensor disposed between first and second gap layers and formed of one or more in-situ oxidized films. The improved spin valve sensor helps eliminate electrical shorting between the spin-valve sensor and shield layers. A fabrication method of the gap layers comprises repeatedly depositing a metallic films on a wafer in a DC-magnetron sputtering module of a sputtering system, and then transferring the wafer in a vacuum to an oxidation module where in-situ oxidation is conducted. This deposition/in-situ oxidation process is repeated until a designed thicknesses of gap layers is attained. Smaller, more sensitive spin-valve sensors may be sandwiched between thinner gap layers formed of in-situ oxidized films, thus allowing for greater recording data densities in disk drive systems.
摘要翻译：公开了一种设置在第一和第二间隙层之间并由一个或多个原位氧化膜形成的自旋阀传感器。改进的自旋阀传感器有助于消除自旋阀传感器和屏蔽层之间的电气短路。间隙层的制造方法包括在溅射系统的DC-磁控溅射模块中在晶片上重复沉积金属膜，然后将晶片真空转移到进行原位氧化的氧化模块。重复该沉积/原位氧化处理，直到达到设计的间隙层的厚度。较小的，更灵敏的自旋阀传感器可以夹在由原位氧化膜形成的较薄间隙层之间，从而允许磁盘驱动系统中更大的记录数据密度。

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