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1. 发明授权

US06916543B2 Copolymer, photoresist compositions thereof and deep UV bilayer system thereof 失效
标题翻译：共聚物，其光致抗蚀剂组合物和深UV双层体系
公开(公告)号：US06916543B2
公开(公告)日：2005-07-12
申请号：US10699298
申请日：2003-10-31
申请人： Binod B. De , Sanjay Malik , Stephanie J. Dilocker , Ognian N. Dimov
发明人： Binod B. De , Sanjay Malik , Stephanie J. Dilocker , Ognian N. Dimov
IPC分类号： B32B9/04 , C08F34/00 , C08F130/08 , C08F220/30 , C08F230/08 , C08G77/20 , G03C1/492 , G03C1/73 , G03C5/08 , G03F20060101 , G03F7/039 , G03F7/075 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/0758 , C08F220/30 , C08F230/08 , Y10T428/31663
摘要： Novel copolymers suitable for forming the top layer photoimagable coating in a deep U V. particularly a 193 nm and 248 nm, bilayer resist system providing high resolution photolithography. Chemically amplified photoresist composition and organosilicon moieties suitable for use in the binder resin for photoimagable etching resistant photoresist composition that is suitable as a material for use in ArF and KrF photolithography using the novel copolymers.
摘要翻译：新颖的共聚物适用于在深U V（特别是193nm和248nm）双层抗蚀剂体系中形成顶层可光成像涂层，提供高分辨率光刻。化学扩增的光致抗蚀剂组合物和适用于粘合剂树脂的有机硅部分，用于光可光刻抗蚀光致抗蚀剂组合物，其适用于使用新型共聚物的ArF和KrF光刻中的材料。

2. 发明授权

US06830870B2 Acetal protected polymers and photoresists compositions thereof 失效
标题翻译：乙缩醛保护的聚合物及其光致抗蚀剂组合物
公开(公告)号：US06830870B2
公开(公告)日：2004-12-14
申请号：US10446540
申请日：2003-05-28
申请人： Sanjay Malik , Stephanie J. Dilocker , Binod B. De
发明人： Sanjay Malik , Stephanie J. Dilocker , Binod B. De
IPC分类号： G03F7004
CPC分类号： G03F7/0046 , C08F8/00 , C08F8/12 , C08F8/18 , C08F8/42 , C08F2800/20 , G03F7/0392 , G03F7/0395 , G03F7/0758 , Y10S430/106 , Y10S430/111 , C08F212/14
摘要： A polymer comprises an acetal-containing monomer unit having the general structure I and at least one of the fluorine-containing monomer units having the general structures II and III: wherein R1, R4, R5 and R6 are each independently H, lower alkyl, CH2CO2R10, cyano, CH2CN, or halogen, wherein R10 is any alkyl, cycloalkyl, aryl, arylalkyl, alkylenecycloalkyl, silyl or siloxy or linear or cyclic polysiloxane group; R2 is CHR11R12 where R11 and R12 are each independently H, lower alkyl, cycloalkyl or aryl; A is a substituted or unsubstituted alkylene, cycloalkylene, alkylenecycloalkylene, or alkylenearylene; and R3 is linear, branched or cyclic fluoroalkyl group or SiR13R14R15 where R13, R14, and R15 are each independently alkyl, cycloalkyl, aryl, arylalkyl, alkylenecycloalkyl, silyl, siloxy, linear or cyclic polysiloxane or silsesquioxane alkyl group; B is an aryl, C(═O)—O—(CH2)x where x=0-4, lower alkyl, cycloalkyl, alkene cycloalkyl, silyl, siloxyl, or linear or cyclic polysiloxane group. R7 is H or an acid sensitive group; R8 and R9 are each independently H or —CN group; and y=0-4 and the use of these polymers in radiation sensitive compositions for exposure to actinic radiation, especially radiation of 157 nm.
摘要翻译：聚合物包括具有通式结构I的含缩醛单体单元和至少一种具有通式结构II和III的含氟单体单元：其中R 1，R 4，R 5和R 5 其中R 10是任何烷基，环烷基，芳基，芳烷基，亚烷基环烷基，甲硅烷基或甲硅烷氧基或直链或环状的聚硅氧烷基团;其中R 10独立地为H，低级烷基，CH 2 CO 2 R 10，氰基，CH 2 CN或卤素。 R 2是CHR 11 R 12，其中R 11和R 12各自独立地为H，低级烷基，环烷基或芳基; A是取代或未取代的亚烷基，亚环烷基，亚烷基亚环烷基或亚烷基亚芳基; 并且R 3是直链，支链或环状氟代烷基或SiR 13 R 14 R 15，其中R 13，R 14和R 15各自独立地为烷基，环烷基，芳基芳基烷基，亚烷基环烷基，甲硅烷基，甲硅烷氧基，直链或环状聚硅氧烷或倍半硅氧烷烷基; B是芳基，C（= O）-O-（CH 2）x，其中x = 0-4，低级烷基，环烷基，烯烃环烷基，甲硅烷基，硅氧烷基或直链或环状聚硅氧烷基团。 R 7是H或酸敏感基团; R 8和R 9各自独立地为H或-CN基; 和y = 0-4，以及这些聚合物在辐射敏感组合物中用于暴露于光化辐射，特别是157nm辐射的用途。

3. 发明申请

US20120178871A1 THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION 有权
标题翻译：热固化底层用于光刻应用
公开(公告)号：US20120178871A1
公开(公告)日：2012-07-12
申请号：US13426194
申请日：2012-03-21
申请人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
发明人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
IPC分类号： C08L55/00
CPC分类号： G03F7/091 , G03F7/094
摘要： An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composirion being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.
摘要翻译：一种用于制造光刻双层涂布基材的多层平版印刷方法中的耐蚀刻热可固化底层组合物，所述组合物是以下组合物：（a）包含结构I，II和III的重复单元的聚合物（b）至少一种交联剂; （c）至少一个热酸发生器; 和（d）至少一种溶剂。

4. 发明授权

US08153346B2 Thermally cured underlayer for lithographic application 有权
标题翻译：用于光刻应用的热固化底层
公开(公告)号：US08153346B2
公开(公告)日：2012-04-10
申请号：US12033923
申请日：2008-02-20
申请人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
发明人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
IPC分类号： G03F7/09 , G03F7/11
CPC分类号： G03F7/091 , G03F7/094
摘要： An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composition being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.
摘要翻译：一种用于制造光刻双层涂布基材的多层平版印刷方法中的耐蚀刻可热固化底层组合物，该组合物是以下组合物：（a）包含结构I，II和III的重复单元的聚合物（b）至少一种交联剂; （c）至少一个热酸发生器; 和（d）至少一种溶剂。

5. 发明授权

US08535872B2 Thermally cured underlayer for lithographic application 有权
标题翻译：用于光刻应用的热固化底层
公开(公告)号：US08535872B2
公开(公告)日：2013-09-17
申请号：US13426194
申请日：2012-03-21
申请人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
发明人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
IPC分类号： G03F7/004 , G03F7/028
CPC分类号： G03F7/091 , G03F7/094
摘要： An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composition being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.
摘要翻译：一种用于制造光刻双层涂布基材的多层平版印刷方法中的耐蚀刻可热固化底层组合物，该组合物是以下组合物：（a）包含结构I，II和III的重复单元的聚合物（b）至少一种交联剂; （c）至少一个热酸发生器; 和（d）至少一种溶剂。

6. 发明申请

US20080206676A1 THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION 有权
标题翻译：热固化底层用于光刻应用
公开(公告)号：US20080206676A1
公开(公告)日：2008-08-28
申请号：US12033923
申请日：2008-02-20
申请人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
发明人： Binod B. De , Ognian N. Dimov , Stephanie J. Dilocker
IPC分类号： G03F7/26 , G03F5/00 , G03F7/004
CPC分类号： G03F7/091 , G03F7/094
摘要： An etch resistant thermally curable Underlayer composition for use in a multiplayer lithographic process for producing a photolithographic bilayer coated substrate, the composition being a composition of: (a) a polymer comprising repeating units of Structure I, II and III (b) at least one crosslinking agent; (c) at least one thermal acid generator; and (d) at least one solvent.
摘要翻译：一种用于制造光刻双层涂布基材的多层平版印刷方法中的耐蚀刻可热固化底层组合物，该组合物是以下组合物：（a）包含结构I，II和III的重复单元的聚合物（b）至少一种交联剂; （c）至少一个热酸发生器; 和（d）至少一种溶剂。

7. 发明授权

US07727705B2 High etch resistant underlayer compositions for multilayer lithographic processes 有权
标题翻译：用于多层光刻工艺的高抗蚀蚀底层组合物
公开(公告)号：US07727705B2
公开(公告)日：2010-06-01
申请号：US12033915
申请日：2008-02-20
申请人： Binod B. De , Sanjay Malik , Raj Sakamuri , Chisun Hong
发明人： Binod B. De , Sanjay Malik , Raj Sakamuri , Chisun Hong
IPC分类号： G03F7/09 , G03F7/20 , G03F7/30 , G03F7/36 , G03C1/76
CPC分类号： G03F7/11 , G03F7/091 , Y10S430/106
摘要： An etch resistant thermally curable Underlayer for use in a multiplayer liyhographic process to produce a photolithographic bilayer coated substrate, the composition having: (a) at least one cycloolefin polymer comprising at least one repeating unit of Structure (I), and at least one repeating unit of Structure (II), and optionally at least one repeating unit of Structure (III) with the proviso that neither Structure (I) nor Structure (II) nor Structure (III) contains acid sensitive groups. b) at least one cross-linking agent selected from the group consisting of an amino or phenolic cross-linking agent; c) a least one thermal acid generator (TAG); d) at lest one solvent; and e) optionally, at least one surfactant.
摘要翻译：一种用于制造光刻双层涂布基材的多层离子印刷方法中的耐蚀刻热固化底层，所述组合物具有：（a）至少一种包含至少一个结构（I）的重复单元的环烯烃聚合物和至少一个重复结构（II）单元和任选的结构（III）的至少一个重复单元，条件是结构（I），结构（II）和结构（III）都不含酸敏感基团。 b）至少一种选自氨基或酚交换剂的交联剂; c）至少一个热酸生成器（TAG）; d）至少一种溶剂; 和e）任选的至少一种表面活性剂。

8. 发明授权

US06610808B2 Thermally cured underlayer for lithographic application 失效
标题翻译：用于光刻应用的热固化底层
公开(公告)号：US06610808B2
公开(公告)日：2003-08-26
申请号：US10093079
申请日：2002-03-07
申请人： Binod B. De , Sanjay Malik , Gregory Spaziano , John Joseph Biafore , Patrick Foster , Sidney George Slater , Thomas Steinhausler , Andrew J. Blakeney
发明人： Binod B. De , Sanjay Malik , Gregory Spaziano , John Joseph Biafore , Patrick Foster , Sidney George Slater , Thomas Steinhausler , Andrew J. Blakeney
IPC分类号： C08F21214
CPC分类号： G03F7/11 , C09D133/14
摘要： Thermally cured undercoat for use in lithography of a thermally cured composition comprising a hydroxyl-containing polymer, an amino cross-linking agent and a thermal acid generator, wherein the hydroxyl containing polymer is a polymer comprising units m, n and o of the following formula: wherein R1 is H or methyl; R2 is a substituted or unsubstituted C6-C14 aryl acrylate or C6-C14 aryl methacrylate group wherein the substituted groups may be phenyl, C1-4 alkyl or C1-4 alkoxy; R3 is a hydroxyl functionalized C1-C8 alkyl acrylate, methacrylate or C6-C14 aryl group, R4 is a C1-C10 linear or branched alkylene; p is an integer of from 1 to 5 with the proviso that there are no more than thirty carbon atoms in the [—R4O—]p; R5 is a C1-C10 linear, branched or cyclic alkyl, substituted or unsubstituted C6-C14 aryl, or substituted or unsubstituted C7-C15 alicyclic hydrocarbon; and m is about 40 to 70, n is about 15 to 35 and o is about 15 to 25.
摘要翻译：包含含羟基聚合物，氨基交联剂和热酸发生剂的热固化组合物的光刻用热固化底涂层，其中含羟基聚合物是包含下式的单元m，n和o的聚合物其中R1是H或甲基; R2是取代或未取代的C6-C14芳基丙烯酸酯或C6-C14芳基甲基丙烯酸酯基，其中取代基可以是苯基，C 1-4烷基或C 1-4烷氧基; R3是丙烯酸羟基官能化C1-C8烷基酯，甲基丙烯酸酯或C6-C14芳基，R4是C1-C10直链或支链亚烷基; p是1至5的整数，条件是在[-R4O-] p中不超过三十个碳原子; R5是C1-C10直链，支链或环状烷基，取代或未取代的C6-C14芳基或取代或未取代的C7-C15脂环族烃; m为约40至70，n为约15至35，o为约15至25。

9. 发明授权

US07491783B2 Process for highly purified polyhedral oligomeric silsesquioxane monomers 失效
标题翻译：高纯度多面体低聚倍半硅氧烷单体的方法
公开(公告)号：US07491783B2
公开(公告)日：2009-02-17
申请号：US11297190
申请日：2005-12-07
申请人： Joseph J. Schwab , Yi-Zhong An , Sanjay Malik , Binod B. De
发明人： Joseph J. Schwab , Yi-Zhong An , Sanjay Malik , Binod B. De
IPC分类号： C08G77/08
CPC分类号： C08G77/08 , C08G77/04 , C08G77/045 , C08G77/20 , G03F7/0757
摘要： A synthesis process for polyhedral oligomeric silsesquioxanes that produces in high yield a low resin content, solvent free, and trace metal free monomer suitable for use in microelectronic applications. POSS silanols are reacted with a silane coupling agent in the presence of a solvent and a superbase.
摘要翻译：用于多面体低聚倍半硅氧烷的合成方法，其以高产率生产低树脂含量，无溶剂和无痕量的单体，适用于微电子应用。 POSS硅烷醇与硅烷偶联剂在溶剂和超级碱存在下反应。

10. 发明申请

US20080206667A1 HIGH ETCH RESISTANT UNDERLAYER COMPOSITIONS FOR MULTILAYER LITHOGRAPHIC PROCESSES 有权
标题翻译：用于多层次光刻工艺的高耐蚀性底层组合物
公开(公告)号：US20080206667A1
公开(公告)日：2008-08-28
申请号：US12033915
申请日：2008-02-20
申请人： Binod B. De , Sanjay Malik , Raj Sakamuri , Chisun Hong
发明人： Binod B. De , Sanjay Malik , Raj Sakamuri , Chisun Hong
IPC分类号： G03F7/004 , G03F7/00 , C08F12/24
CPC分类号： G03F7/11 , G03F7/091 , Y10S430/106
摘要： An etch resistant thermally curable Underlayer for use in a multiplayer liyhographic process to produce a photolithographic bilayer coated substrate, the composition having: (a) at least one cycloolefin polymer comprising at least one repeating unit of Structure (I), and at least one repeating unit of Structure (II), and optionally at least one repeating unit of Structure (III) with the proviso that neither Structure (I) nor Structure (II) nor Structure (III) contains acid sensitive groups. b) at least one cross-linking agent selected from the group consisting of an amino or phenolic cross-linking agent; c) a least one thermal acid generator (TAG); d) at lest one solvent; and e) optionally, at least one surfactant.
摘要翻译：一种用于制造光刻双层涂布基材的多层离子印刷方法中的耐蚀刻热固化底层，所述组合物具有：（a）至少一种包含至少一个结构（I）的重复单元的环烯烃聚合物和至少一个重复结构（II）单元和任选的结构（III）的至少一个重复单元，条件是结构（I），结构（II）和结构（III）都不含酸敏感基团。 b）至少一种选自氨基或酚交换剂的交联剂; c）至少一个热酸生成器（TAG）; d）至少一种溶剂; 和e）任选的至少一种表面活性剂。

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