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1. 发明授权

US5305080A Apparatus for inspecting surface of a face plate for a cathode ray tube 失效
标题翻译：用于检查阴极射线管面板表面的装置
公开(公告)号：US5305080A
公开(公告)日：1994-04-19
申请号：US901888
申请日：1992-06-19
申请人： Sangsoo Lee , Nagkeun Seong , Sangkeun Jeong , Boghyeon Yoo , Koonseon Oh , Jeongin Seo , Jaekyeong Rho
发明人： Sangsoo Lee , Nagkeun Seong , Sangkeun Jeong , Boghyeon Yoo , Koonseon Oh , Jeongin Seo , Jaekyeong Rho
IPC分类号： G01B11/30 , G01N21/84 , H01J9/42 , G01N21/00 , B65B37/00
CPC分类号： H01J9/42
摘要： An inspection apparatus is provided to permit an inspector to easily inspect a face plate which has passed through a grinding process for flaws, an alien substance or an unground portion on the face plate surface. The apparatus includes a gate conveyor on which the face plate is conveyed. When the face plate is stopped on the gate conveyor, the sides of the face plate are engaged via padded piston rods and the gate conveyor swung open so as to permit the engaged face plate to be rotated for inspection purposes. Light sources may be positioned above and below the gate conveyor to aid in the inspection of a face plate.
摘要翻译：提供检查装置以允许检查者容易地检查已经通过磨削过程的面板，面板表面上的缺陷，外来物质或未接地部分。该装置包括输送面板的门传送带。当面板在门输送机上停止时，面板的侧面通过填充的活塞杆接合，并且门式输送机摆动打开，以允许接合的面板旋转以进行检查。光源可以位于门输送机上方和下方，以帮助检查面板。

2. 发明授权

US5223731A EPROM cell using trench isolation to provide leak current immunity 失效
标题翻译： EPROM单元采用沟槽隔离提供漏电流抗扰度
公开(公告)号：US5223731A
公开(公告)日：1993-06-29
申请号：US804478
申请日：1991-12-09
申请人： Sangsoo Lee
发明人： Sangsoo Lee
IPC分类号： H01L21/28 , H01L21/336 , H01L27/115 , H01L29/06 , H01L29/788
CPC分类号： H01L29/66825 , H01L21/28273 , H01L27/115 , H01L29/0653 , H01L29/7886
摘要： Disclosed is a floating gate EPROM cell wherein a trench is formed in and divides the semiconductor substrate into two portions. Separated source and drain regions are formed in one portion and contact one side of the trench region, and a control gate region is formed in the second portion and contacts the opposite side of the trench. A first insulating film covers the source, drain, trench regions and part of the control gate region, a portion of which is covered by a first polycrystalline silicon film which forms the floating gate. A second insulating layer covers the first polycrystalline silicon film and also a portion of the control gate region, which, in turn, is covered by a second polycrystalline silicon layer which extends beyond the second insulating layer into electrical contact with the control gate region. Thus, a control gate is provided both above and below the floating gate. The coupling efficiency between the control gate and the floating gate is primarily determined by the thickness of the first insulating film, which allows the second insulating film to be thicker to insure against current leakage from the floating gate and at the same time easier to deposit.
摘要翻译：公开了一种浮栅EPROM单元，其中沟槽形成在半导体衬底中并分成两部分。分离的源极和漏极区域形成在一个部分中并且接触沟槽区域的一侧，并且控制栅极区域形成在第二部分中并且接触沟槽的相对侧。第一绝缘膜覆盖源极，漏极，沟槽区域和控制栅极区域的一部分，其一部分由形成浮动栅极的第一多晶硅膜覆盖。第二绝缘层覆盖第一多晶硅膜以及覆盖控制栅极区域的一部分，其又被延伸超过第二绝缘层的第二多晶硅层覆盖，以与控制栅极区域电接触。因此，在浮动栅极的上方和下方设置控制栅极。控制栅极和浮置栅极之间的耦合效率主要由第一绝缘膜的厚度确定，这允许第二绝缘膜更厚以确保来自浮动栅极的电流泄漏，并且同时更容易沉积。

3. 发明申请

US20170135863A1 Water Activated Cast Sock 审中-公开
公开(公告)号：US20170135863A1
公开(公告)日：2017-05-18
申请号：US14940293
申请日：2015-11-13
申请人： Byeongsu Cheon , Sangsoo Lee
发明人： Byeongsu Cheon , Sangsoo Lee
IPC分类号： A61F13/04 , A61L15/08 , A61L15/12 , A61F5/01 , A61F5/058
CPC分类号： A61F13/04 , A61F5/0109 , A61F5/0111 , A61F5/0118 , A61F5/0585 , A61F5/05858 , A61L15/12 , C08L75/04
摘要： A breathable orthopedic cast having a variable width along its length is provided. The cast is formed of a breathable netting impregnated with a moisture activated hardener. Along the length the cast has a reduced width portion to aid in conforming over a joint such as an ankle.

4. 发明授权

US5296397A Method for manufacturing an EPROM cell 失效
标题翻译： EPROM单元的制造方法
公开(公告)号：US5296397A
公开(公告)日：1994-03-22
申请号：US051621
申请日：1993-04-22
申请人： Sangsoo Lee
发明人： Sangsoo Lee
IPC分类号： H01L21/28 , H01L21/336 , H01L27/115 , H01L29/06 , H01L29/788 , H01L21/265
CPC分类号： H01L29/66825 , H01L21/28273 , H01L27/115 , H01L29/0653 , H01L29/7886
摘要： Disclosed is a floating gate EPROM cell wherein a trench is formed in and divides the semiconductor substrate into two portions. Separated source and drain regions are formed in one portion and contact one side of the trench region, and a control gate region is formed in the second portion and contacts the opposite side of the trench. A first insulating film covers the source, drain, trench regions and part of the control gate region, a portion of which is covered by a first polycrystalline silicon film which forms the floating gate. A second insulating layer covers the first polycrystalline silicon film and also a portion of the control gate region, which, in turn, is covered by a second polycrystalline silicon layer which extends beyond the second insulating layer into electrical contact with the control gate region. Thus, a control gate is provided both above and below the floating gate. The coupling efficiency between the control gate and the floating gate is primarily determined by the thickness of the first insulating film, which allows the second insulating film to be thicker to insure against current leakage from the floating gate and at the same time easier to deposit.
摘要翻译：公开了一种浮栅EPROM单元，其中沟槽形成在半导体衬底中并分成两部分。分离的源极和漏极区域形成在一个部分中并且接触沟槽区域的一侧，并且控制栅极区域形成在第二部分中并且接触沟槽的相对侧。第一绝缘膜覆盖源极，漏极，沟槽区域和控制栅极区域的一部分，其一部分由形成浮动栅极的第一多晶硅膜覆盖。第二绝缘层覆盖第一多晶硅膜以及覆盖控制栅极区域的一部分，其又被延伸超过第二绝缘层的第二多晶硅层覆盖，以与控制栅极区域电接触。因此，在浮动栅极的上方和下方设置控制栅极。控制栅极和浮置栅极之间的耦合效率主要由第一绝缘膜的厚度确定，这允许第二绝缘膜更厚以确保来自浮动栅极的电流泄漏，并且同时更容易沉积。

5. 发明授权

US08207341B2 Process or synthesizing substituted isoquinolines 有权
标题翻译：合成取代异喹啉的方法
公开(公告)号：US08207341B2
公开(公告)日：2012-06-26
申请号：US12547158
申请日：2009-08-25
申请人： Shawn A. Springfield , Wendel W. Doubleday , Percy Sarwood Manchand , Hyungcheol Kim , Sangsoo Lee , Chunyoung Kim , Soonha Yang , Eunhee Choi
发明人： Shawn A. Springfield , Wendel W. Doubleday , Percy Sarwood Manchand , Hyungcheol Kim , Sangsoo Lee , Chunyoung Kim , Soonha Yang , Eunhee Choi
IPC分类号： C07D217/24
CPC分类号： C07D217/24
摘要： The present disclosure generally relates to a process for synthesizing optionally substituted 1-chloro-4-methoxyisoquinolines. The present disclosure also relates to intermediates useful in this process.
摘要翻译：本公开内容一般涉及合成任选取代的1-氯-4-甲氧基异喹啉的方法。本公开还涉及在该方法中有用的中间体。

6. 发明申请

US20100056792A1 Process for Synthesizing Substituted Isoquinolines 有权
标题翻译：合成取代的异喹啉的方法
公开(公告)号：US20100056792A1
公开(公告)日：2010-03-04
申请号：US12547158
申请日：2009-08-25
申请人： Shawn A. Springfield , Wendel W. Doubleday , Frederic Buono , Michel A. Couturier , Yvonne Lear , Denis Favreau , Kathia Levesque , Percy Sarwood Manchand , Markus Frieser , Anthony J. Cocuzza , Hyungcheol Kim , Sangsoo Lee , Chunyoung Kim , Soonha Yang , Eunhee Choi
发明人： Shawn A. Springfield , Wendel W. Doubleday , Frederic Buono , Michel A. Couturier , Yvonne Lear , Denis Favreau , Kathia Levesque , Percy Sarwood Manchand , Markus Frieser , Anthony J. Cocuzza , Hyungcheol Kim , Sangsoo Lee , Chunyoung Kim , Soonha Yang , Eunhee Choi
IPC分类号： C07D217/24 , A61P31/14
CPC分类号： C07D217/24
摘要： The present disclosure generally relates to a process for synthesizing optionally substituted 1-chloro-4-methoxyisoquinolines. The present disclosure also relates to intermediates useful in this process.
摘要翻译：本公开内容一般涉及合成任选取代的1-氯-4-甲氧基异喹啉的方法。本公开还涉及在该方法中有用的中间体。

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