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    • 4. 发明授权
    • Method and apparatus for performing dark field double dipole lithography (DDL)
    • 用于进行暗场双偶极子光刻(DDL)的方法和装置
    • US07981576B2
    • 2011-07-19
    • US12890494
    • 2010-09-24
    • Duan-Fu Stephen HsuSangbong ParkDouglas Van Den BroekeJang Fung Chen
    • Duan-Fu Stephen HsuSangbong ParkDouglas Van Den BroekeJang Fung Chen
    • G03F1/00G03F1/14G06F17/50
    • G03F1/36G03F1/70G03F7/70125G03F7/70466
    • A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
    • 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。
    • 8. 发明授权
    • Method and apparatus for performing dark field double dipole lithography (DDL)
    • 用于进行暗场双偶极子光刻(DDL)的方法和装置
    • US08632930B2
    • 2014-01-21
    • US13155259
    • 2011-06-07
    • Duan-Fu Stephen HsuSangbong ParkDouglas Van Den BroekeJang Fung Chen
    • Duan-Fu Stephen HsuSangbong ParkDouglas Van Den BroekeJang Fung Chen
    • G03F1/36
    • G03F1/36G03F1/70G03F7/70125G03F7/70466
    • A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
    • 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤:识别具有多个特征的目标图案,包括水平和垂直特征; 基于目标图案生成水平掩模,其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模,其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。
    • 9. 发明授权
    • Method, program product and apparatus for obtaining short-range flare model parameters for lithography simulation tool
    • 用于获得光刻模拟工具的短程火炬模型参数的方法,程序产品和设备
    • US07818151B2
    • 2010-10-19
    • US11415423
    • 2006-05-02
    • Tamer CoskunSangbong ParkJang Fung ChenBernd Geh
    • Tamer CoskunSangbong ParkJang Fung ChenBernd Geh
    • G06F17/50
    • G03F7/70941G03F7/705
    • A process of obtaining short-range flare model parameters representing a short-range flare which degrades a contrast of an image generated by a lithography tool, is disclosed. Short-range flare is measured from the image to obtain measured short-range flare data. A simulation is performed based on short-range flare model parameters to obtain simulated short-range flare data. The simulated short-range flare data is compared with the measured short range flare data. It is determined whether the short-range flare model parameters used in the simulation is appropriate based on the comparison result. The short-range flare model parameters is optimized according to the measured short-range data and the simulated short-range flare data if the short-range flare model parameters used for the simulation is not appropriate.
    • 公开了一种获得表示短距离火炬的短距离火炬模型参数的过程,其降低了由光刻工具产生的图像的对比度。 从图像中测量短程光晕,以获得测量的短距离闪光数据。 基于短距离火炬模型参数进行模拟,以获得模拟的短距离火炬数据。 将模拟的短程火炬数据与测量的短距离火炬数据进行比较。 根据比较结果确定模拟中使用的短程火炬模型参数是否合适。 如果用于模拟的短距离火炬模型参数不合适,则根据测得的短距离数据和模拟的短距离火炬数据优化短距离火炬模型参数。