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1. 发明授权

US07332787B2 Structure for realizing integrated circuit having schottky biode and method of fabricating the same 有权
标题翻译：用于实现具有肖特基生物体的集成电路的结构及其制造方法
公开(公告)号：US07332787B2
公开(公告)日：2008-02-19
申请号：US11147164
申请日：2005-06-08
申请人： Ja-nam Ku , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
发明人： Ja-nam Ku , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
IPC分类号： H01L29/732
CPC分类号： H01L29/872 , H01L27/0788
摘要： An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
摘要翻译：一体形成多个肖特基二极管和电容器的集成电路结构。集成电路结构包括：衬底，其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层，使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层，使得第二导电层与第一导电层和电介质层一起形成电容器。因此，当在整流电路中使用集成电路结构时，可以减小整个电路的尺寸。

2. 发明授权

US07268685B2 Radio frequency identification tag for transmitting temperature data and method therefor 有权
标题翻译：用于传输温度数据的射频识别标签及其方法
公开(公告)号：US07268685B2
公开(公告)日：2007-09-11
申请号：US11147163
申请日：2005-06-08
申请人： Sang-wook Kwon , Ja-nam Ku , Il-jong Song , Young-hoon Min
发明人： Sang-wook Kwon , Ja-nam Ku , Il-jong Song , Young-hoon Min
IPC分类号： G08B13/14
CPC分类号： G06K19/0701 , G06K19/0723
摘要： A radio frequency identification tag, used in a radio frequency identification system, includes an antenna unit for receiving an external magnetic wave to generate an induced current; a driving voltage generating unit for converting the induced current into a constant voltage and outputting the constant voltage; and a state detecting unit for detecting information about a change in an operational state of the driving voltage generating unit. The tag further includes a memory for storing temperature data corresponding to the information about the change in the operational state and data needed for identification; and a controlling unit for reading out, from the memory, the temperature data dependent on the information about the change in the operational state detected by the state detecting unit and the identification data. The read temperature and identification data are transmitted via an antenna unit.
摘要翻译：在射频识别系统中使用的射频识别标签包括用于接收外部磁波以产生感应电流的天线单元; 驱动电压产生单元，用于将感应电流转换成恒定电压并输出该恒定电压; 以及状态检测单元，用于检测关于驱动电压产生单元的操作状态的变化的信息。标签还包括用于存储对应于关于操作状态的变化和识别所需的数据的信息的温度数据的存储器; 以及控制单元，用于从存储器读出取决于由状态检测单元检测到的操作状态变化的信息和识别数据的温度数据。读取温度和识别数据通过天线单元传输。

3. 发明授权

US07503690B2 Temperature measurement apparatus and method for measuring temperatures by using RF signals of different frequencies 失效
标题翻译：通过使用不同频率的RF信号测量温度的温度测量装置和方法
公开(公告)号：US07503690B2
公开(公告)日：2009-03-17
申请号：US11148304
申请日：2005-06-09
申请人： Il-jong Song , Ja-nam Ku , Young-hoon Min , Sang-wook Kwon
发明人： Il-jong Song , Ja-nam Ku , Young-hoon Min , Sang-wook Kwon
IPC分类号： G01J5/00
CPC分类号： G01K13/00 , G01K1/024 , G01K7/01
摘要： Disclosed are a temperature measurement apparatus and method for measuring temperature by using RF signals having different frequencies. The temperature measurement apparatus includes a parameter generation unit for generating a first parameter based on a radio frequency (RF) signal having a first frequency and a second parameter based on an RF signal having a second frequency; a parameter detection unit for detecting the generated first and second parameters; and a control unit for calculating a temperature value based on the detected first and second parameters. Accordingly, the temperature measurement apparatus can measure temperature by use of existing components and received RF signals without any addition of a temperature sensor, as well as measure temperature precisely without having any influence on the intensities of RF signals that can vary due to the changes of transmission distances and signal-receiving environments.
摘要翻译：公开了通过使用具有不同频率的RF信号来测量温度的温度测量装置和方法。温度测量装置包括参数产生单元，用于基于具有第二频率的RF信号的具有第一频率和第二参数的射频（RF）信号产生第一参数; 参数检测单元，用于检测所生成的第一和第二参数; 以及控制单元，用于基于检测到的第一和第二参数来计算温度值。因此，温度测量装置可以通过使用现有部件和接收的RF信号来测量温度，而不需要任何温度传感器的添加，以及精确地测量温度，而不会对RF信号的强度产生任何影响，RF信号的强度可能由于传输距离和信号接收环境。

4. 发明申请

US20070237204A1 Capacitive type temperature sensor 审中-公开
标题翻译：电容式温度传感器
公开(公告)号：US20070237204A1
公开(公告)日：2007-10-11
申请号：US11217433
申请日：2005-09-02
申请人： Sang-wook Kwon , Young-hoon Min
发明人： Sang-wook Kwon , Young-hoon Min
IPC分类号： G01K7/00
CPC分类号： G01K7/34 , G01K5/02 , G01K5/16 , G01K5/28
摘要： A capacitive type temperature sensor includes a first electrode layer, a second electrode layer, a dielectric layer positioned between the first and second electrode layers and having a dielectric of which a volume is changed in response to a temperature change, and a temperature calculation unit calculating a temperature corresponding to an electric potential difference between the first and second electrode layers. Accordingly, the capacitive type temperature sensor has a good sensitivity of measuring the temperature and a good accuracy, does not consume a large amount of power, and allows a process of fabricating the same to be simplified.
摘要翻译：电容式温度传感器包括第一电极层，第二电极层，位于第一和第二电极层之间的电介质层，并且具有响应于温度变化而体积变化的电介质，温度计算单元计算对应于第一和第二电极层之间的电位差的温度。因此，电容型温度传感器具有良好的测量温度和良好的精度的灵敏度，不消耗大量的功率，并且允许简化其制造工艺。

5. 发明申请

US20080096361A1 STRUCTURE FOR REALIZING INTEGRATED CIRCUIT HAVING SCHOTTKY DIODE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：用于实现具有肖特基二极管的集成电路的结构及其制造方法
公开(公告)号：US20080096361A1
公开(公告)日：2008-04-24
申请号：US11963354
申请日：2007-12-21
申请人： Ja-nam KU , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
发明人： Ja-nam KU , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
IPC分类号： H01L21/20
CPC分类号： H01L29/872 , H01L27/0788
摘要： An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
摘要翻译：一体形成多个肖特基二极管和电容器的集成电路结构。集成电路结构包括：衬底，其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层，使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层，使得第二导电层与第一导电层和电介质层一起形成电容器。因此，当在整流电路中使用集成电路结构时，可以减小整个电路的尺寸。

6. 发明申请

US20050269658A1 Structure for realizing integrated circuit having schottky biode and method of fabricating the same 有权
标题翻译：用于实现具有肖特基生物体的集成电路的结构及其制造方法
公开(公告)号：US20050269658A1
公开(公告)日：2005-12-08
申请号：US11147164
申请日：2005-06-08
申请人： Ja-nam Ku , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
发明人： Ja-nam Ku , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
IPC分类号： H01L29/872 , G06K19/07 , G06K19/077 , H01L21/28 , H01L21/822 , H01L27/04 , H01L27/07 , H01L29/47 , H01L29/732
CPC分类号： H01L29/872 , H01L27/0788
摘要： An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
摘要翻译：一体形成多个肖特基二极管和电容器的集成电路结构。集成电路结构包括：衬底，其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层，使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层，使得第二导电层与第一导电层和电介质层一起形成电容器。因此，当在整流电路中使用集成电路结构时，可以减小整个电路的尺寸。

7. 发明授权

US07625804B2 Structure for realizing integrated circuit having Schottky diode and method of fabricating the same 有权
标题翻译：用于实现具有肖特基二极管的集成电路的结构及其制造方法
公开(公告)号：US07625804B2
公开(公告)日：2009-12-01
申请号：US11963354
申请日：2007-12-21
申请人： Ja-nam Ku , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
发明人： Ja-nam Ku , Seong-hearn Lee , Il-jong Song , Young-hoon Min , Sang-wook Kwon
IPC分类号： H01L21/20
CPC分类号： H01L29/872 , H01L27/0788
摘要： An integrated circuit structure in which a plurality of Schottky diodes and a capacitor are integrally formed. The integrated circuit structure includes a substrate including an N-type semiconductor doped with N-type impurities and a P-type semiconductor doped with P-type impurities; a first conductive layer laminated on the substrate so that the first conductive layer is electrically connected to the N-type semiconductor and the P-type semiconductor; a dielectric layer laminated on an upper surface of the first conductive layer; and a second conductive layer laminated on an upper surface of the dielectric layer so that the second conductive layer forms a capacitor together with the first conductive layer and the dielectric layer. Accordingly, when the integrated circuit structure is used in a rectification circuit, the size of an entire circuit can be reduced.
摘要翻译：一体形成多个肖特基二极管和电容器的集成电路结构。集成电路结构包括：衬底，其包括掺杂有N型杂质的N型半导体和掺杂有P型杂质的P型半导体; 层叠在所述基板上的第一导电层，使得所述第一导电层与所述N型半导体和所述P型半导体电连接; 层压在所述第一导电层的上表面上的电介质层; 以及层叠在电介质层的上表面上的第二导电层，使得第二导电层与第一导电层和电介质层一起形成电容器。因此，当在整流电路中使用集成电路结构时，可以减小整个电路的尺寸。

8. 发明申请

US20050276307A1 Temperature measurement apparatus and method for measuring temperatures by using RF signals of different frequencies 失效
标题翻译：通过使用不同频率的RF信号测量温度的温度测量装置和方法
公开(公告)号：US20050276307A1
公开(公告)日：2005-12-15
申请号：US11148304
申请日：2005-06-09
申请人： Il-jong Song , Ja-nam Ku , Young-hoon Min , Sang-wook Kwon
发明人： Il-jong Song , Ja-nam Ku , Young-hoon Min , Sang-wook Kwon
IPC分类号： G01K1/02 , G01J5/00 , G01K7/01 , G01K13/00 , G06K17/00 , G06K19/00 , G06K19/07
CPC分类号： G01K13/00 , G01K1/024 , G01K7/01
摘要： Disclosed are a temperature measurement apparatus and method for measuring temperature by using RF signals having different frequencies. The temperature measurement apparatus includes a parameter generation unit for generating a first parameter based on a radio frequency (RF) signal having a first frequency and a second parameter based on an RF signal having a second frequency; a parameter detection unit for detecting the generated first and second parameters; and a control unit for calculating a temperature value based on the detected first and second parameters. Accordingly, the temperature measurement apparatus can measure temperature by use of existing components and received RF signals without any addition of a temperature sensor, as well as measure temperature precisely without having any influence on the intensities of RF signals that can vary due to the changes of transmission distances and signal-receiving environments.
摘要翻译：公开了通过使用具有不同频率的RF信号来测量温度的温度测量装置和方法。温度测量装置包括参数产生单元，用于基于具有第二频率的RF信号的具有第一频率和第二参数的射频（RF）信号产生第一参数; 参数检测单元，用于检测所生成的第一和第二参数; 以及控制单元，用于基于检测到的第一和第二参数来计算温度值。因此，温度测量装置可以通过使用现有部件和接收的RF信号而不加温度传感器来测量温度，并且可以精确地测量温度，而不会对RF信号的强度产生任何影响，RF信号的强度可能由于传输距离和信号接收环境。

9. 发明申请

US20050270153A1 Radio frequency identification tag for transmitting temperature data and method therefor 有权
标题翻译：用于传输温度数据的射频识别标签及其方法
公开(公告)号：US20050270153A1
公开(公告)日：2005-12-08
申请号：US11147163
申请日：2005-06-08
申请人： Sang-wook Kwon , Ja-nam Ku , Il-jong Song , Young-hoon Min
发明人： Sang-wook Kwon , Ja-nam Ku , Il-jong Song , Young-hoon Min
IPC分类号： G06K19/10 , G06K19/07 , G08B1/08 , H04B5/02
CPC分类号： G06K19/0701 , G06K19/0723
摘要： A radio frequency identification tag, used in a radio frequency identification system, includes an antenna unit for receiving an external magnetic wave to generate an induced current; a driving voltage generating unit for converting the induced current into a constant voltage and outputting the constant voltage; and a state detecting unit for detecting information about a change in an operational state of the driving voltage generating unit. The tag further includes a memory for storing temperature data corresponding to the information about the change in the operational state and data needed for identification; and a controlling unit for reading out, from the memory, the temperature data dependent on the information about the change in the operational state detected by the state detecting unit and the identification data. The read temperature and identification data are transmitted via an antenna unit.
摘要翻译：在射频识别系统中使用的射频识别标签包括用于接收外部磁波以产生感应电流的天线单元; 驱动电压产生单元，用于将感应电流转换成恒定电压并输出该恒定电压; 以及状态检测单元，用于检测关于驱动电压产生单元的操作状态的变化的信息。标签还包括用于存储对应于关于操作状态的变化和识别所需的数据的信息的温度数据的存储器; 以及控制单元，用于从存储器读出取决于由状态检测单元检测到的操作状态变化的信息和识别数据的温度数据。读取温度和识别数据通过天线单元传输。

10. 发明授权

US07728703B2 RF MEMS switch and method for fabricating the same 失效
标题翻译： RF MEMS开关及其制造方法
公开(公告)号：US07728703B2
公开(公告)日：2010-06-01
申请号：US11396573
申请日：2006-04-04
申请人： Jong-seok Kim , Sang-wook Kwon , Dong-kyun Kim , Che-heung Kim , Sang-hun Lee , Young-tack Houng , Chang-seung Lee , In-sang Song
发明人： Jong-seok Kim , Sang-wook Kwon , Dong-kyun Kim , Che-heung Kim , Sang-hun Lee , Young-tack Houng , Chang-seung Lee , In-sang Song
IPC分类号： H01P1/10 , H01H11/04 , H01H9/00 , H01H57/00
CPC分类号： H01P1/127 , H01H59/0009 , H01H2057/006 , Y10T29/49002 , Y10T29/49016 , Y10T29/4913 , Y10T29/49144 , Y10T29/49155
摘要： An RF MEMS switch and a method for fabricating the same are disclosed, in which the RF MEMS device is down driven at a low voltage using a piezoelectric effect. The RF MEMS switch includes a substrate provided with RF signal lines and a cavity, a cantilever positioned on the cavity, having one end fixed to the substrate, and a contact pad connecting the RF signal lines with the cantilever in contact with the RF signal lines when the cantilever is down driven.
摘要翻译：公开了一种RF MEMS开关及其制造方法，其中使用压电效应将RF MEMS器件以低电压下降驱动。 RF MEMS开关包括设置有RF信号线和空腔的基板，位于空腔上的悬臂，其一端固定到基板，以及将RF信号线与与RF信号线接触的悬臂连接的接触垫当悬臂下降驱动时。

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