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    • 6. 发明授权
    • Apparatus and method for driving MEMS structure and detecting motion of the driven MEMS structure using a single electrode
    • 用于驱动MEMS结构并使用单个电极检测所驱动的MEMS结构的运动的装置和方法
    • US07178397B2
    • 2007-02-20
    • US11018830
    • 2004-12-22
    • Sang-woo LeeJong-pal KimByeung-leul Lee
    • Sang-woo LeeJong-pal KimByeung-leul Lee
    • G01P9/04G01P15/125
    • G01C19/5776
    • Apparatus and a method for driving and detecting a motion of MEMS structure using single electrode. Apparatus includes a driving signal generation part driving MEMS structure; a motion detection part detecting motion of MEMS structure and outputting a motion current signal; an amplification part amplifying motion current signal and outputting a motion voltage signal; a gain adjustment part amplifying driving signal and outputting an amplified driving signal; a differential circuit part adding and subtracting with respect to signals output from the amplifying part and the gain adjustment part and outputting a motion signal without the driving signal; and a motion signal detection part selecting and outputting a motion signal of a predetermined frequency from the motion signal output from the differential circuit part. The variable capacitor is configured by a movable electrode plate integrally formed with MEMS structure and a fixed electrode plate disposed opposite to the movable electrode plate.
    • 使用单个电极驱动和检测MEMS结构的运动的装置和方法。 装置包括驱动MEMS结构的驱动信号产生部分; 检测MEMS结构的运动并输出运动电流信号的运动检测部件; 放大部分放大运动电流信号并输出​​运动电压信号; 增益调整部分,放大驱动信号并输出​​放大的驱动信号; 差分电路部分相对于从放大部分和增益调整部分输出的信号相加和减去,并输出没有驱动信号的运动信号; 以及运动信号检测部分,从从差分电路部分输出的运动信号中选择并输出预定频率的运动信号。 可变电容器由与MEMS结构一体形成的可动电极板和与可动电极板相对设置的固定电极板构成。
    • 7. 发明申请
    • Method for fabricating vertical offset structure
    • 垂直偏移结构的制作方法
    • US20050266598A1
    • 2005-12-01
    • US11134521
    • 2005-05-23
    • Jong-pal KimSang-woo LeeByeung-Leul Lee
    • Jong-pal KimSang-woo LeeByeung-Leul Lee
    • B81B3/00B81C1/00G01P15/08G01P15/125G02B26/08H01L21/00
    • B81C1/00626B81B2201/0235B81B2201/0242B81B2201/045B81B2203/0109B81B2203/0118B81C2201/014G01P15/0802G01P15/125G02B26/0841
    • A method for fabricating a vertical offset structure that forms a complete vertical offset on a wafer includes a first trench forming step of forming first trenches on a wafer; a first etching step of performing a first patterning for determining etching positions of second and third trenches by depositing a first thin film on the wafer, performing a second patterning for temporarily protecting the etching position of the third trench by depositing a second thin film on the first thin film and the wafer, and then forming the second trenches by etching the wafer; a second etching step of forming a protection layer on side surfaces of the second trenches and then vertically extending the second trenches by etching the wafer; a third etching step of removing the second thin film and then forming the third trench by etching a position from which the second thin film is removed; and a fourth etching step of horizontally extending the second trenches vertically extended at the second etching step and the third trench by etching the wafer.
    • 用于制造在晶片上形成完整的垂直偏移的垂直偏移结构的方法包括在晶片上形成第一沟槽的第一沟槽形成步骤; 第一蚀刻步骤,通过在晶片上沉积第一薄膜来执行用于确定第二和第三沟槽的蚀刻位置的第一图案化,执行用于暂时保护第三沟槽的蚀刻位置的第二图案化, 第一薄膜和晶片,然后通过蚀刻晶片形成第二沟槽; 第二蚀刻步骤,在所述第二沟槽的侧表面上形成保护层,然后通过蚀刻所述晶片垂直延伸所述第二沟槽; 第三蚀刻步骤,通过蚀刻除去第二薄膜的位置来去除第二薄膜,然后形成第三沟槽; 以及第四蚀刻步骤,通过蚀刻晶片水平延伸在第二蚀刻步骤和第三沟槽处垂直延伸的第二沟槽。
    • 8. 发明授权
    • Method for fabricating vertical offset structure
    • 垂直偏移结构的制作方法
    • US07214559B2
    • 2007-05-08
    • US11134521
    • 2005-05-23
    • Jong-pal KimSang-woo LeeByeung-leul Lee
    • Jong-pal KimSang-woo LeeByeung-leul Lee
    • H01L21/00
    • B81C1/00626B81B2201/0235B81B2201/0242B81B2201/045B81B2203/0109B81B2203/0118B81C2201/014G01P15/0802G01P15/125G02B26/0841
    • A method for fabricating a vertical offset structure that forms a complete vertical offset on a wafer includes a first trench forming step of forming first trenches on a wafer; a first etching step of performing a first patterning for determining etching positions of second and third trenches by depositing a first thin film on the wafer, performing a second patterning for temporarily protecting the etching position of the third trench by depositing a second thin film on the first thin film and the wafer, and then forming the second trenches by etching the wafer; a second etching step of forming a protection layer on side surfaces of the second trenches and then vertically extending the second trenches by etching the wafer; a third etching step of removing the second thin film and then forming the third trench by etching a position from which the second thin film is removed; and a fourth etching step of horizontally extending the second trenches vertically extended at the second etching step and the third trench by etching the wafer.
    • 用于制造在晶片上形成完整的垂直偏移的垂直偏移结构的方法包括在晶片上形成第一沟槽的第一沟槽形成步骤; 第一蚀刻步骤,通过在晶片上沉积第一薄膜来执行用于确定第二和第三沟槽的蚀刻位置的第一图案化,执行用于暂时保护第三沟槽的蚀刻位置的第二图案化, 第一薄膜和晶片,然后通过蚀刻晶片形成第二沟槽; 第二蚀刻步骤,在所述第二沟槽的侧表面上形成保护层,然后通过蚀刻所述晶片垂直延伸所述第二沟槽; 第三蚀刻步骤,通过蚀刻除去第二薄膜的位置来去除第二薄膜,然后形成第三沟槽; 以及第四蚀刻步骤,通过蚀刻晶片水平延伸在第二蚀刻步骤和第三沟槽处垂直延伸的第二沟槽。
    • 10. 发明申请
    • Apparatus and method for driving MEMS structure and detecting motion of the driven MEMS structure using a single electrode
    • 用于驱动MEMS结构并使用单个电极检测所驱动的MEMS结构的运动的装置和方法
    • US20050132806A1
    • 2005-06-23
    • US11018830
    • 2004-12-22
    • Sang-woo LeeJong-pal KimByeung-Ieul Lee
    • Sang-woo LeeJong-pal KimByeung-Ieul Lee
    • B81B7/02G01C19/56G01P15/14
    • G01C19/5776
    • Apparatus and a method for driving and detecting a motion of MEMS structure using single electrode. Apparatus includes a driving signal generation part driving MEMS structure; a motion detection part detecting motion of MEMS structure and outputting a motion current signal; an amplification part amplifying motion current signal and outputting a motion voltage signal; a gain adjustment part amplifying driving signal and outputting an amplified driving signal; a differential circuit part adding and subtracting with respect to signals output from the amplifying part and the gain adjustment part and outputting a motion signal without the driving signal; and a motion signal detection part selecting and outputting a motion signal of a predetermined frequency from the motion signal output from the differential circuit part. The variable capacitor is configured by a movable electrode plate integrally formed with MEMS structure and a fixed electrode plate disposed opposite to the movable electrode plate.
    • 使用单个电极驱动和检测MEMS结构的运动的装置和方法。 装置包括驱动MEMS结构的驱动信号产生部分; 检测MEMS结构的运动并输出运动电流信号的运动检测部件; 放大部分放大运动电流信号并输出​​运动电压信号; 增益调整部分,放大驱动信号并输出​​放大的驱动信号; 差分电路部分相对于从放大部分和增益调整部分输出的信号相加和减去,并输出没有驱动信号的运动信号; 以及运动信号检测部分,从从差分电路部分输出的运动信号中选择并输出预定频率的运动信号。 可变电容器由与MEMS结构一体形成的可动电极板和与可动电极板相对设置的固定电极板构成。