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1. 发明授权

US07265040B2 Cleaning solution and method for selectively removing layer in a silicidation process 有权
标题翻译：用于在硅化过程中选择性去除层的清洁溶液和方法
公开(公告)号：US07265040B2
公开(公告)日：2007-09-04
申请号：US10728517
申请日：2003-12-05
申请人： Sang-Yong Kim , Kun-Tack Lee
发明人： Sang-Yong Kim , Kun-Tack Lee
IPC分类号： H01L21/4763
CPC分类号： H01L21/32134 , C11D3/3956 , C11D7/08 , C11D11/0047 , H01L21/31111
摘要： A cleaning solution selectively removes a titanium nitride layer and a non-reacting metal layer. The cleaning solution includes an acid solution and an oxidation agent with iodine. The cleaning solution also effectively removes a photoresist layer and organic materials. Moreover, the cleaning solution can be employed in tungsten gate electrode technologies that have been spotlighted because of the capability to improve device operation characteristics.
摘要翻译：清洁溶液选择性地除去氮化钛层和非反应性金属层。清洗液包括酸溶液和碘的氧化剂。清洁溶液还有效地除去光致抗蚀剂层和有机材料。此外，由于能够提高器件工作特性，所以清洗液可以用于已被聚光的钨栅电极技术中。

2. 发明申请

US20070243715A1 CLEANING SOLUTION AND METHOD FOR SELECTIVELY REMOVING LAYER IN A SILICIDATION PROCESS 审中-公开
标题翻译：清洁方法和在硅酸盐过程中选择性去除层的方法
公开(公告)号：US20070243715A1
公开(公告)日：2007-10-18
申请号：US11769238
申请日：2007-06-27
申请人： Sang-Yong Kim , Kun-Tack Lee
发明人： Sang-Yong Kim , Kun-Tack Lee
IPC分类号： H01L21/302
CPC分类号： H01L21/32134 , C11D3/3956 , C11D7/08 , C11D11/0047 , H01L21/31111
摘要： A cleaning solution selectively removes a titanium nitride layer and a non-reacting metal layer. The cleaning solution includes an acid solution and an oxidation agent with iodine. The cleaning solution also effectively removes a photoresist layer and organic materials. Moreover, the cleaning solution can be employed in tungsten gate electrode technologies that have been spotlighted because of the capability to improve device operation characteristics.
摘要翻译：清洁溶液选择性地除去氮化钛层和非反应性金属层。清洗液包括酸溶液和碘的氧化剂。清洁溶液还有效地除去光致抗蚀剂层和有机材料。此外，由于能够提高器件工作特性，所以清洗液可以用于已被聚光的钨栅电极技术中。

3. 发明申请

US20060270575A1 Cleaning solution and cleaning method of a semiconductor device 失效
公开(公告)号：US20060270575A1
公开(公告)日：2006-11-30
申请号：US11502011
申请日：2006-08-10
申请人： Sang-Yong Kim , Sang-Jun Choi , Chang-Ki Hong
发明人： Sang-Yong Kim , Sang-Jun Choi , Chang-Ki Hong
IPC分类号： G03F7/42
CPC分类号： C23F1/16 , C11D3/042 , C11D7/08 , C11D11/0047 , H01L21/02063 , H01L21/02074 , H01L21/32134 , H01L21/76805 , H01L21/76814
摘要： A cleaning method for removing foreign bodies during the fabrication of semiconductor devices including treating a substrate with a cleaning solution including an oxidizer to form a chemical oxide layer and then removing the chemical oxide layer, thereby removing foreign bodies from a surface of the semiconductor substrate. Accordingly, the foreign bodies can be substantially removed from the surface of the substrate without corroding a metal.

4. 发明申请

US20060097322A1 Electrostatic discharge (ESD) protection circuit 审中-公开
标题翻译：静电放电（ESD）保护电路
公开(公告)号：US20060097322A1
公开(公告)日：2006-05-11
申请号：US11272570
申请日：2005-11-09
申请人： Kook-Whee Kwak , Sang-Yong Kim
发明人： Kook-Whee Kwak , Sang-Yong Kim
IPC分类号： H01L23/62
CPC分类号： H01L29/7436 , H01L27/0262 , H01L29/87
摘要： An electrostatic discharge (ESD) protection circuit is provided. The ESD protection circuit includes: a first conductivity type substrate; a second conductivity type well region formed in a predetermined portion of the substrate; a gate structure including a gate insulation layer and a gate electrode stacked on a selected surface portion of the substrate and separated from the well region with a predetermined distance; a first conductivity type first diffusion region formed in the well region; a second conductivity type second diffusion region formed beneath another selected surface portion of the substrate contacting one side edge of the gate structure; and a second conductivity type third diffusion region, extending from the other side edge of the gate structure into the well region, and electrically connected to the first diffusion region through a resistor.
摘要翻译：提供静电放电（ESD）保护电路。 ESD保护电路包括：第一导电型基板; 形成在基板的预定部分中的第二导电类型阱区; 栅极结构，其包括层叠在所述基板的所选择的表面部分上并以预定距离与所述阱区分离的栅极绝缘层和栅极电极; 形成在所述阱区中的第一导电型第一扩散区; 第二导电类型的第二扩散区，形成在接触栅极结构的一个侧边缘的衬底的另一个选择的表面部分之下; 以及第二导电类型的第三扩散区域，从栅极结构的另一侧边缘延伸到阱区域中，并通过电阻器电连接到第一扩散区域。

5. 发明申请

US20060042722A1 Apparatus for drying substrate and method thereof 失效
标题翻译：干燥基材的设备及其方法
公开(公告)号：US20060042722A1
公开(公告)日：2006-03-02
申请号：US11158912
申请日：2005-06-22
申请人： Sang-Yong Kim , Chang-Ki Hong , Sang-Jun Choi , Woo-Gwan Shim
发明人： Sang-Yong Kim , Chang-Ki Hong , Sang-Jun Choi , Woo-Gwan Shim
IPC分类号： B65B1/04
CPC分类号： H01L21/67051 , H01L21/67034
摘要： An apparatus for drying a substrate using the Marangoni effect is disclosed. The apparatus includes a rotatable supporting portion on which a substrate is placed. A first nozzle for supplying de-ionized water and a second nozzle for supplying isopropyl alcohol vapor are provided on the supporting portion. When the isopropyl alcohol vapor is supplied to the center of the substrate at the initial stage, the amount of alcohol that reaches the substrate is controlled by a controlling portion such that the amount of the second liquid gradually increases.
摘要翻译：公开了一种使用Marangoni效应对基板进行干燥的装置。该装置包括可旋转的支撑部分，放置基板。用于提供去离子水的第一喷嘴和用于提供异丙醇蒸气的第二喷嘴设置在支撑部分上。当在初始阶段将异丙醇蒸汽供应到基材的中心时，通过控制部分控制到达基板的醇的量，使得第二液体的量逐渐增加。

6. 发明授权

US06921919B2 Semiconductor device and method of forming the same 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US06921919B2
公开(公告)日：2005-07-26
申请号：US10633048
申请日：2003-07-31
申请人： Ji-Young Kim , Sang-Yong Kim
发明人： Ji-Young Kim , Sang-Yong Kim
IPC分类号： H01L29/78 , H01L21/8234 , H01L23/31 , H01L29/04 , H01L31/036
CPC分类号： H01L29/6656 , H01L21/823437 , H01L21/823468 , H01L23/3171 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device protecting the ends of a gate line and a method of forming the same are disclosed. The semiconductor device includes a semiconductor substrate, a gate line crossing over the semiconductor substrate, and a protecting pattern covering ends of the gate line. According to the method, a gate line is formed at a semiconductor substrate. A spacer is formed to cover sidewalls of the gate line. A protecting pattern is formed to cover the ends of the gate line. The protecting pattern may be formed of silicon nitride or silicon oxide. Since the protecting pattern protects ends of a gate line, it is possible to prevent gate electrodes from being damaged by a cleaning solution such as SC1 in a subsequent process.
摘要翻译：公开了保护栅极线的端部的半导体器件及其形成方法。半导体器件包括半导体衬底，跨越半导体衬底的栅极线和覆盖栅极线的端部的保护图案。根据该方法，在半导体衬底上形成栅极线。形成间隔件以覆盖栅极线的侧壁。形成保护图案以覆盖栅极线的端部。保护图案可以由氮化硅或氧化硅形成。由于保护图案保护栅极线的端部，因此可以防止在随后的工艺中栅电极被诸如SC1的清洁溶液损坏。

7. 发明授权

US08871958B2 Method for preparing 5-chloromethyl-2-furfural using galactan derived from seaweed in two component phase 有权
标题翻译：使用来自海藻的半乳聚糖在两相组分相中制备5-氯甲基-2-糠醛的方法
公开(公告)号：US08871958B2
公开(公告)日：2014-10-28
申请号：US13985019
申请日：2012-02-16
申请人： Jin-Ku Cho , Sang-Yong Kim , Do-Hoon Lee , Bo Ra Kim , Jae-Won Jung
发明人： Jin-Ku Cho , Sang-Yong Kim , Do-Hoon Lee , Bo Ra Kim , Jae-Won Jung
IPC分类号： C07D307/46 , B01J31/02
CPC分类号： C07D307/46 , B01J31/0231
摘要： The present disclosure relates to an acid catalyst composition for producing 5-chloromethyl-2-furfural from galactan derived from seaweed and a method for producing 5-chloromethyl-2-furfural from galactan derived from seaweed on a two component phase using the acid catalyst, the acid catalyst composition for producing 5-chloromethyl-2-furfural from galactan derived from seaweed including organic solvent and dilute hydrochloric acid, a concentration of the dilute hydrochloric acid being 4N to 8N (normal).According to the present disclosure, there is an advantage of converting 5-chloromethyl-2-furfural from galactan derived from seaweed by means of a single process by mixing dilute hydrochloric acid and organic solvent by an optimal ratio, unlike conventional methods for producing 5-chloromethyl-2-furfural that had to go through a multi-phase process of preconditioning and saccharification.
摘要翻译：本公开内容涉及用于从海藻衍生的半乳聚糖制备5-氯甲基-2-糠醛的酸催化剂组合物，以及使用酸催化剂在双组分相上从海藻衍生的半乳聚糖制备5-氯甲基-2-糠醛的方法，由衍生自海藻的半乳聚糖（包括有机溶剂和稀盐酸）生产5-氯甲基-2-糠醛的酸催化剂组合物，稀盐酸的浓度为4N至8N（正常）。根据本公开内容，与常规的制备5-氯甲基-2-糠醛的方法相比，通过以单一方法通过混合稀盐酸和有机溶剂以最佳比例将来自海藻的半乳聚糖转化为5-氯甲基-2-糠醛的优点，氯甲基-2-糠醛，必须经过预处理和糖化的多相过程。

8. 发明申请

US20120053355A1 Method for Producing Biofuel Using Marine Algae-Derived Galactan 有权
标题翻译：使用海藻衍生的半乳聚糖生产生物燃料的方法
公开(公告)号：US20120053355A1
公开(公告)日：2012-03-01
申请号：US13320058
申请日：2010-04-15
申请人： Jin-Ku Cho , Sang-Yong Kim , Do-Hoon Lee , Bo-Ra Kim , Jae-Won Jung
发明人： Jin-Ku Cho , Sang-Yong Kim , Do-Hoon Lee , Bo-Ra Kim , Jae-Won Jung
IPC分类号： C07D307/50 , C07C69/738 , C07C69/716
CPC分类号： C07D233/24 , C07D307/48 , C07D307/50 , C10G2300/1014 , C10G2300/44 , C10L1/02 , C10L1/026 , Y02E50/13 , Y02P30/20
摘要： Disclosed is a method of preparing a petroleum-alternative bio fuel material such as 5-hydroxymethyl-2-furfural (HMF), 5-alkoxymethyl-2-furfural, levulinic acid alkil ester, etc. through a single process without saccharification, using a catalyst conversion reaction, from galactan that can be massively supplied at low costs and extracted from macroalgae of marine reusable resources.Thus, the macroalgae of the marine biomass resources is used so that a carbon source can be more easily extracted than that of a lignocellulosic biomass resource without a problem of having an effect on grain price like a crop-based biomass.
摘要翻译：公开了一种通过没有糖化的单一方法制备石油替代生物燃料材料如5-羟甲基-2-糠醛（HMF），5-烷氧基甲基-2-糠醛，乙酰丙酸烷基酯等的方法，使用催化剂转化反应，可以以低成本大量供应并从海洋可再利用资源的大型藻类中提取的半乳聚糖。因此，使用海洋生物质资源的大型藻类，使得碳源比木质纤维素生物质资源更容易提取，而不会对谷物价格产生影响，如作物生物量。

9. 发明授权

US07435644B2 Method of manufacturing capacitor of semiconductor device 有权
标题翻译：制造半导体器件电容器的方法
公开(公告)号：US07435644B2
公开(公告)日：2008-10-14
申请号：US11329577
申请日：2006-01-11
申请人： Woo-Gwan Shim , Jung-Min Oh , Chang-Ki Hong , Sang-Jun Choi , Sang-Yong Kim
发明人： Woo-Gwan Shim , Jung-Min Oh , Chang-Ki Hong , Sang-Jun Choi , Sang-Yong Kim
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10852
摘要： Provided is a method of manufacturing a capacitor of a semiconductor device, which can prevent tilting or an electrical short of a lower electrode. In the method, a mesh-type bridge insulating layer is formed above the contact plug on a mold oxide layer. The mold oxide layer and the bridge insulating layer are etched to define an electrode region. The mold oxide layer is removed using an etching gas having an etch selectivity of 500 or greater for the mold oxide layer with respect to the bridge insulating layer.
摘要翻译：提供一种制造半导体器件的电容器的方法，其可以防止下电极的倾斜或电短路。在该方法中，在模具氧化物层上的接触插塞上方形成网状桥接绝缘层。蚀刻模具氧化物层和桥接绝缘层以限定电极区域。使用相对于桥接绝缘层的模具氧化物层的蚀刻选择性为500以上的蚀刻气体去除模具氧化物层。

10. 发明申请

US20060189148A1 Transistor having a metal nitride layer pattern, etchant and methods of forming the same 有权
标题翻译：具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法
公开(公告)号：US20060189148A1
公开(公告)日：2006-08-24
申请号：US11358082
申请日：2006-02-22
申请人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
发明人： Sang-Yong Kim , Ji-Hoon Cha , Woo-Gwan Shim , Chang-Ki Hong , Sang-Jun Choi
IPC分类号： H01L21/302 , C09K13/00 , H01L29/94
CPC分类号： H01L21/32134 , C09K13/02 , H01L21/28088 , H01L29/4966 , H01L29/517 , H01L29/6659 , H01L29/7833
摘要： A transistor having a metal nitride layer pattern, etchant and methods of forming the same is provided. A gate insulating layer and/or a metal nitride layer may be formed on a semiconductor substrate. A mask layer may be formed on the metal nitride layer. Using the mask layer as an etching mask, an etching process may be performed on the metal nitride layer, forming the metal nitride layer pattern. An etchant, which may have an oxidizing agent, a chelate agent and/or a pH adjusting mixture, may perform the etching. The methods may reduce etching damage to a gate insulating layer under the metal nitride layer pattern during the formation of a transistor.
摘要翻译：提供具有金属氮化物层图案的晶体管，蚀刻剂及其形成方法。可以在半导体衬底上形成栅极绝缘层和/或金属氮化物层。掩模层可以形成在金属氮化物层上。使用掩模层作为蚀刻掩模，可以对金属氮化物层进行蚀刻处理，形成金属氮化物层图案。可以具有氧化剂，螯合剂和/或pH调节混合物的蚀刻剂可以进行蚀刻。在形成晶体管期间，这些方法可以减少金属氮化物层图案下的栅极绝缘层的蚀刻损伤。

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