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1. 发明授权

US07403494B2 Method for generating nodes in multiway search tree and search method using the same 失效
标题翻译：在多路搜索树中生成节点的方法和使用它的搜索方法
公开(公告)号：US07403494B2
公开(公告)日：2008-07-22
申请号：US10038923
申请日：2001-12-31
申请人： Kang-Bok Lee , Sang-Woo Lee , Heyung-Sub Lee , Hyeong-Ho Lee
发明人： Kang-Bok Lee , Sang-Woo Lee , Heyung-Sub Lee , Hyeong-Ho Lee
IPC分类号： H04L12/28 , G06F7/00 , G06F15/173 , H04L12/66
CPC分类号： H04L45/742 , H04L49/90 , H04L49/901 , H04L49/9057 , Y10S707/99933
摘要： A node structure of a multiway search tree can accelerates a search speed by making a key, a key pointer and a node pointer coincident with the size of a cache line through the use of only one pointer written on a node regardless of the number of keys used in the node and, thereafter, reduce the main memory capacity, a search method using the node structure and a computer readable recording medium in which a program implementing the search method is recorded. The method for generating nodes of a multiway search tree includes the steps of: a) assigning at least one key to each of the nodes; and b) assigning pointer information so that related information written on the node is accommodated in a cache line regardless a number of keys.
摘要翻译：多路搜索树的节点结构可以通过使用键，键指针和节点指针，通过仅使用写在节点上的一个指针而与高速缓存行的大小一致来加速搜索速度，而不管键的数量如何并且此后减少主存储器容量，使用节点结构的搜索方法以及其中记录了实现搜索方法的程序的计算机可读记录介质。用于生成多路搜索树的节点的方法包括以下步骤：a）将至少一个密钥分配给每个节点; 以及b）分配指针信息，使得写在节点上的相关信息被容纳在高速缓存行中，而不管密钥的数量如何。

2. 发明授权

US07382726B2 Node system, dual ring communication system using node system, and communication method thereof 失效
标题翻译：节点系统，使用节点系统的双环通信系统及其通信方法
公开(公告)号：US07382726B2
公开(公告)日：2008-06-03
申请号：US10426402
申请日：2003-04-30
申请人： Sang-Woo Lee , Heyung-Sub Lee , Hyeong-Ho Lee
发明人： Sang-Woo Lee , Heyung-Sub Lee , Hyeong-Ho Lee
IPC分类号： H04J3/14
CPC分类号： H04L45/125 , H04L12/42 , H04L47/10 , H04L47/11 , H04L47/263 , Y02D50/10
摘要： A dual ring communication method using a node system includes: with congestion occurring in a first node system, the first node system generating a congestion information packet and forwarding it to an upper node system positioned in a direction opposed to a direction of forwarding a data packet; a second node system determining whether it is the last node involved in the congestion; adding its congestion information to the congestion information packet and forwarding the congestion information packet to an upper node system when the second node system is not the last node; performing bandwidth allocation for the node systems in other case; and generating a bandwidth allocation packet and transmitting the bandwidth allocation packet to the node systems involved in the congestion.
摘要翻译：使用节点系统的双环通信方法包括：具有在第一节点系统中发生的拥塞，所述第一节点系统生成拥塞信息分组并将其转发到位于与转发数据分组的方向相反的方向上的上层节点系统 ; 确定是否是所述拥塞中涉及的最后一个节点的第二节点系统; 将所述拥塞信息添加到所述拥塞信息分组，并且当所述第二节点系统不是所述最后节点时，将所述拥塞信息分组转发到上级节点系统; 在其他情况下，为节点系统执行带宽分配; 以及生成带宽分配分组并将所述带宽分配分组发送到所述拥塞中涉及的节点系统。

3. 发明授权

US08145248B2 Apparatus and method for uplink beamforming and Space-Division Multiple Access (SDMA) in Multiple Input Multiple Output (MIMO) wireless communication systems 有权
标题翻译：用于多输入多输出（MIMO）无线通信系统中的上行波束成形和空分多址（SDMA）的装置和方法
公开(公告)号：US08145248B2
公开(公告)日：2012-03-27
申请号：US12407951
申请日：2009-03-20
申请人： Ki-Young Han , Sang-Woo Lee , June Moon , Byoung-Ha Yi , Cheol Mun
发明人： Ki-Young Han , Sang-Woo Lee , June Moon , Byoung-Ha Yi , Cheol Mun
IPC分类号： H04B7/00 , H04B1/38 , H04L27/00 , H04W4/00
CPC分类号： H04B7/0417 , H04B7/0404 , H04B7/0632 , H04B7/0634 , H04B7/0639 , H04L25/0204 , H04L25/0224
摘要： An apparatus and method for beamforming of a terminal in a Multiple Input Multiple Output (MIMO) wireless communication system are provided. The method includes transmitting sounding signals beamformed through a plurality of beamforming weight vectors in sequence, receiving control information indicative of an uplink weight vector determined by a base station and a maximum channel quality value using the sounding signals and transmitting a transmit signal beamformed with the uplink weight vector via a plurality of antennas.
摘要翻译：提供了一种用于在多输入多输出（MIMO）无线通信系统中的终端的波束成形的装置和方法。该方法包括：依次发送通过多个波束成形权重向量形成的波束信号，接收指示由基站确定的上行链路权重向量的控制信息和使用该探测信号的最大信道质量值，并发送与上行链路形成的发射信号波束权重向量经由多个天线。

4. 发明授权

US08124524B2 Methods of forming metal interconnection structures 有权
标题翻译：形成金属互连结构的方法
公开(公告)号：US08124524B2
公开(公告)日：2012-02-28
申请号：US12711812
申请日：2010-02-24
申请人： Kyung-In Choi , Sang-Woo Lee , Jong-Myeong Lee , Jong-Won Hong , Hyun-Bae Lee
发明人： Kyung-In Choi , Sang-Woo Lee , Jong-Myeong Lee , Jong-Won Hong , Hyun-Bae Lee
IPC分类号： H01L21/4763
CPC分类号： H01L23/5226 , H01L21/76846 , H01L21/76858 , H01L23/53223 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming a metal interconnection structure are provided. The methods include forming an insulating layer on a semiconductor substrate including a first metal interconnection. The insulating layer is patterned to form an opening that exposes the first metal interconnection. A first diffusion barrier layer is formed on the exposed first metal interconnection. After forming the first diffusion barrier layer, a second diffusion barrier layer is formed on the first diffusion barrier layer in the opening, the second diffusion barrier layer contacting a sidewall of the opening. A second metal interconnection is formed on the second diffusion barrier layer.
摘要翻译：提供形成金属互连结构的方法。所述方法包括在包括第一金属互连的半导体衬底上形成绝缘层。图案化绝缘层以形成露出第一金属互连的开口。在暴露的第一金属互连上形成第一扩散阻挡层。在形成第一扩散阻挡层之后，在开口中的第一扩散阻挡层上形成第二扩散阻挡层，第二扩散阻挡层与开口的侧壁接触。第二金属互连形成在第二扩散阻挡层上。

5. 发明申请

US20120024228A1 APPARATUS FOR FORMING THIN FILM 有权
标题翻译：用于形成薄膜的装置
公开(公告)号：US20120024228A1
公开(公告)日：2012-02-02
申请号：US13179463
申请日：2011-07-08
申请人： Sang-Woo Lee
发明人： Sang-Woo Lee
IPC分类号： C23C16/455
CPC分类号： C23C14/243 , C23C14/12
摘要： A thin film forming apparatus according to the embodiment includes a plurality of vapor deposition sources respectively separated from each other, a plurality of nozzle bodies connected to upper portions of the respective vapor deposition sources, and a plurality of nozzles connected to upper portions of the respective nozzle bodies. A nozzle hole of each of the nozzles is formed on a same vapor deposition line. Thus, according to the embodiment, the first organic material and the second organic material respectively sprayed through a first nozzle hole and a second nozzle hole can be uniformly mixed by disposing the first nozzle hole and the second nozzle on the same vapor deposition line.
摘要翻译：根据实施例的薄膜形成装置包括分别彼此分离的多个气相沉积源，连接到各个蒸镀源的上部的多个喷嘴体，以及连接到各个蒸镀源的上部的多个喷嘴喷嘴体。每个喷嘴的喷嘴孔形成在相同的蒸镀线上。因此，根据本实施例，通过将第一喷嘴孔和第二喷嘴设置在相同的蒸镀线上，能够均匀地混合通过第一喷嘴孔和第二喷嘴孔喷射的第一有机材料和第二有机材料。

6. 发明申请

US20110306205A1 Semiconductor Device and Method of Fabricating the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110306205A1
公开(公告)日：2011-12-15
申请号：US13105195
申请日：2011-05-11
申请人： Byung-Hak Lee , Yu-Gyun Shin , Sang-Woo Lee , Sun-Ghil Lee , Jin-Bum Kim , Joon-Gon Lee
发明人： Byung-Hak Lee , Yu-Gyun Shin , Sang-Woo Lee , Sun-Ghil Lee , Jin-Bum Kim , Joon-Gon Lee
IPC分类号： H01L21/3205
CPC分类号： H01L21/28518 , H01L21/823807 , H01L21/823814
摘要： Methods of forming a semiconductor device include providing a substrate having an area including a source and a drain region of a transistor. A nickel (Ni) metal film is formed on the substrate area including the source and the drain region. A first heat-treatment process is performed including heating the substrate including the metal film from a first temperature to a second temperature at a first ramping rate and holding the substrate including the metal film at the second temperature for a first period of time. A second heat-treatment process is then performed including heating the substrate including the metal film from a third temperature to a fourth temperature at a second ramping rate and holding the substrate at the fourth temperature for a second period of time. The fourth temperature is different from the second temperature and the second period of time is different from the first period of time. The sequentially performed first and second heat-treatment processes convert the Ni metal layer on the source and drain regions into a NiSi layer on the source and drain regions and a NiSi2 layer between the NiSi layer and the source and drain regions.
摘要翻译：形成半导体器件的方法包括提供具有包括晶体管的源极和漏极区域的区域的衬底。在包括源极和漏极区域的衬底区域上形成镍（Ni）金属膜。执行第一热处理工艺，包括以第一斜率从第一温度至第二温度加热包括金属膜的基板，并将包含金属膜的基板在第二温度下保持第一时间段。然后执行第二热处理工艺，包括以第二斜率从第三温度至第四温度加热包括金属膜的衬底，并将衬底保持在第四温度第二时间段。第四温度与第二温度不同，第二时间段与第一时间段不同。依次执行的第一和第二热处理工艺将源极和漏极区域上的Ni金属层转换成源极和漏极区域上的NiSi层以及NiSi层与源极和漏极区域之间的NiSi 2层。

7. 发明授权

US07816257B2 Methods of fabricating semiconductor devices including contact plugs having laterally extending portions 有权
标题翻译：制造半导体器件的方法，包括具有横向延伸部分的接触插塞
公开(公告)号：US07816257B2
公开(公告)日：2010-10-19
申请号：US11409685
申请日：2006-04-24
申请人： Seong-Hwee Cheong , Gil-Heyun Choi , Sang-Woo Lee , Jin-Ho Park
发明人： Seong-Hwee Cheong , Gil-Heyun Choi , Sang-Woo Lee , Jin-Ho Park
IPC分类号： H01L21/4763
CPC分类号： H01L27/1108 , H01L21/28562 , H01L21/76802 , H01L21/76843 , H01L21/76846 , H01L27/0688 , H01L27/11
摘要： In a method of forming an integrated circuit device, an opening is formed extending through a first and a second insulating layers and through a semiconductor layer therebetween to a surface of a substrate. The opening includes a recess in a sidewall thereof between the first and second insulating layers adjacent the semiconductor layer. A conductive plug is formed on the sidewall of the opening and on the surface of the substrate and laterally extending into the recess between the first and second insulating layers to contact the semiconductor layer. The semiconductor layer may be selectively etched at the sidewall without substantially etching the first and second insulating layers at the sidewall of the opening to form the recess between the first and second insulating layers. Related devices are also discussed.
摘要翻译：在形成集成电路器件的方法中，形成延伸穿过第一和第二绝缘层并且穿过其间的半导体层到基板表面的开口。该开口包括在与半导体层相邻的第一和第二绝缘层之间的侧壁中的凹部。导电插塞形成在开口的侧壁和基板的表面上，并横向延伸到第一和第二绝缘层之间的凹部中以接触半导体层。可以在侧壁处选择性地蚀刻半导体层，而不必在开口的侧壁基本上蚀刻第一和第二绝缘层，以在第一和第二绝缘层之间形成凹部。还讨论了相关设备。

8. 发明授权

US07759248B2 Semiconductor memory device and method of fabricating the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07759248B2
公开(公告)日：2010-07-20
申请号：US11585087
申请日：2006-10-24
申请人： Seong-Hwee Cheong , Sang-Woo Lee , Jong-Won Hong , Seung-Gil Yang , Kyung-In Choi , Hyun-Bae Lee
发明人： Seong-Hwee Cheong , Sang-Woo Lee , Jong-Won Hong , Seung-Gil Yang , Kyung-In Choi , Hyun-Bae Lee
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L21/76846 , H01L21/28562 , H01L21/76843
摘要： A semiconductor memory device and a method of fabricating the same are disclosed. The semiconductor memory device may include a conductive layer doped with impurities, a non-conductive layer on the conductive layer and undoped with impurities, an interlayer insulating film on the non-conductive layer and having a contact hole for exposing an upper surface of the non-conductive layer, an ohmic tungsten film on the contact hole, a lower portion of the ohmic tungsten film permeating the non-conductive layer to come in contact with the conductive layer, a tungsten nitride film on the contact hole on the ohmic tungsten film, and a tungsten film on the tungsten nitride film to fill the contact hole.
摘要翻译：公开了一种半导体存储器件及其制造方法。半导体存储器件可以包括掺杂有杂质的导电层，在导电层上不掺杂的非导电层，在非导电层上的层间绝缘膜，并且具有用于暴露非导电层的上表面的接触孔导电层，接触孔上的欧姆钨膜，渗透非导电层的欧姆钨膜的下部与导电层接触，在欧姆钨膜上的接触孔上形成氮化钨膜，并在氮化钨膜上形成钨膜以填充接触孔。

9. 发明授权

US07662716B2 Method for forming silicide contacts 有权
标题翻译：形成硅化物接触的方法
公开(公告)号：US07662716B2
公开(公告)日：2010-02-16
申请号：US11355112
申请日：2006-02-14
申请人： Hyun-Su Kim , Kwang-Jin Moon , Sang-Woo Lee , Eun-Ok Lee , Ho-Ki Lee
发明人： Hyun-Su Kim , Kwang-Jin Moon , Sang-Woo Lee , Eun-Ok Lee , Ho-Ki Lee
IPC分类号： H01L21/28 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/76855 , H01L21/28556 , H01L21/76843
摘要： Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes.
摘要翻译：可以通过在衬底的第一器件区域上形成第一硅化物层，然后在第二器件区域上形成第二硅化物层，同时进一步形成第一硅化物层来产生具有不同特性的触点。可以在衬底的第一器件区域上的介电层中形成第一接触孔。然后可以在第一接触孔中形成硅化物层。可以在形成第一接触孔和硅化物层之后形成第二接触孔。然后可以在第一和第二接触孔中执行第二硅化。

10. 发明申请

US20090261713A1 ORGANIC LIGHT EMITTING DEVICE 有权
标题翻译：有机发光装置
公开(公告)号：US20090261713A1
公开(公告)日：2009-10-22
申请号：US12260955
申请日：2008-10-29
申请人： Beohm-Rock CHOI , Sang-Woo Lee , Un-Cheol Sung , Jung-Soo Rhee , Young-Rok Song , Jung-Yeon Kim
发明人： Beohm-Rock CHOI , Sang-Woo Lee , Un-Cheol Sung , Jung-Soo Rhee , Young-Rok Song , Jung-Yeon Kim
IPC分类号： H01J1/62
CPC分类号： H01L27/3276 , H01L51/5052 , H01L51/5088 , H01L51/5092 , H01L51/5234 , H01L51/5265 , H01L2251/5315
摘要： An organic light emitting device according to an exemplary embodiment of the present invention includes: a substrate; a first signal line and a second signal line formed on the substrate and intersecting each other; a common voltage line formed on the substrate, and intersecting one of the first signal line and the second signal line; a switching thin film transistor connected to the first signal line and the second signal line; a driving thin film transistor connected to the switching thin film transistor; an insulating layer covering the first signal line, the second signal line, the switching thin film transistor, and the driving thin film transistor; a pixel electrode formed on the insulating layer, and electrically connected to the driving thin film transistor; an organic light emitting member formed on the pixel electrode and including an emission layer and a member layer; and a common electrode formed on the organic light emitting member, wherein the member layer is made of a plurality of layers including electrons or holes, and at least one layer of the member layer is disposed between the common voltage line and the common electrode to electrically connect between the common voltage line and the common electrode.
摘要翻译：根据本发明的示例性实施例的有机发光器件包括：基板; 形成在所述基板上并且彼此交叉的第一信号线和第二信号线; 形成在所述基板上并与所述第一信号线和所述第二信号线之一相交的公共电压线; 连接到第一信号线和第二信号线的开关薄膜晶体管; 连接到开关薄膜晶体管的驱动薄膜晶体管; 覆盖第一信号线，第二信号线，开关薄膜晶体管和驱动薄膜晶体管的绝缘层; 形成在所述绝缘层上并与所述驱动薄膜晶体管电连接的像素电极; 形成在所述像素电极上并且包括发射层和成员层的有机发光部件; 以及形成在有机发光部件上的公共电极，其中，所述部件层由包含电子或空穴的多个层构成，并且至少一层所述部件层设置在所述公共电压线与所述公共电极之间，在公共电压线和公共电极之间连接。

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