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1. 发明授权

US06806517B2 Flash memory having local SONOS structure using notched gate and manufacturing method thereof 失效
标题翻译：具有本地SONOS结构的闪存，使用缺口栅极及其制造方法
公开(公告)号：US06806517B2
公开(公告)日：2004-10-19
申请号：US10388427
申请日：2003-03-17
申请人： Sang Su Kim , Nae-In Lee , Geum-Jong Bae , Ki Chul Kim , Hwa Sung Rhee
发明人： Sang Su Kim , Nae-In Lee , Geum-Jong Bae , Ki Chul Kim , Hwa Sung Rhee
IPC分类号： H01L2710
CPC分类号： H01L29/4232 , H01L21/28114 , H01L21/28273 , H01L21/28282 , H01L29/66833 , H01L29/7923
摘要： A notched gate SONOS transistor includes: a substrate having source/drain regions; a gate insulator layer on the substrate between the source/drain regions; a notched gate structure, on the gate insulator leyer, having at least one notch; and at least one ONO wedge structure in the at least one notch, respectively, of the gate structure.
摘要翻译：缺口门SONOS晶体管包括：具有源/漏区的衬底; 在源/漏区之间的衬底上的栅极绝缘体层; 在所述栅极绝缘体雷管上具有至少一个凹口的缺口栅极结构; 以及分别在所述栅极结构的所述至少一个凹口中的至少一个ONO楔形结构。

2. 发明授权

US07060563B2 Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same 失效
标题翻译：具有两片门和自对准ONO的本地SONOS型结构及其制造方法
公开(公告)号：US07060563B2
公开(公告)日：2006-06-13
申请号：US10953553
申请日：2004-09-30
申请人： Geum-Jong Bae , Nae-In Lee , Sang Su Kim , Ki Chul Kim , Jin-Hee Kim , In-Wook Cho , Sung-Ho Kim , Kwang-Wook Koh
发明人： Geum-Jong Bae , Nae-In Lee , Sang Su Kim , Ki Chul Kim , Jin-Hee Kim , In-Wook Cho , Sung-Ho Kim , Kwang-Wook Koh
IPC分类号： H01L21/8247
CPC分类号： H01L29/792 , H01L29/7923 , Y10S438/954
摘要： A local SONOS structure having a two-piece gate and a self-aligned ONO structure includes: a substrate; an ONO structure on the substrate; a first gate layer on and aligned with the ONO structure; a gate insulator on the substrate aside the ONO structure; and a second gate layer on the first gate layer and on the gate insulator. The first and second gate layers are electrically connected together. Together, the ONO structure and first and second gate layers define at least a 1-bit local SONOS structure. A corresponding method of manufacture includes: providing a substrate; forming an ONO structure on the substrate; forming a first gate layer on and aligned with the ONO structure; forming a gate insulator on the substrate aside the ONO structure; forming a second gate layer on the first gate layer and on the gate insulator; and electrically connecting the first and second gate layers.
摘要翻译：具有两件式门和自对准ONO结构的本地SONOS结构包括：衬底; 基底上的ONO结构; 在ONO结构上并与ONO结构对准的第一栅极层; 衬底上的栅极绝缘体旁边的ONO结构; 以及在第一栅极层上和栅极绝缘体上的第二栅极层。第一和第二栅极层电连接在一起。 ONO结构和第一和第二栅极层一起定义至少1位本地SONOS结构。相应的制造方法包括：提供衬底; 在基板上形成ONO结构; 在ONO结构上形成第一栅极层并与其结合; 在衬底上形成栅极绝缘体，除了ONO结构; 在第一栅极层和栅极绝缘体上形成第二栅极层; 并且电连接第一和第二栅极层。

3. 发明授权

US06815764B2 Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same 失效
标题翻译：具有两片门和自对准ONO的本地SONOS型结构及其制造方法
公开(公告)号：US06815764B2
公开(公告)日：2004-11-09
申请号：US10388631
申请日：2003-03-17
申请人： Geum-Jong Bae , Nae-In Lee , Sang Su Kim , Ki Chul Kim , Jin-Hee Kim , In-Wook Cho , Sung-Ho Kim , Kwang-Wook Koh
发明人： Geum-Jong Bae , Nae-In Lee , Sang Su Kim , Ki Chul Kim , Jin-Hee Kim , In-Wook Cho , Sung-Ho Kim , Kwang-Wook Koh
IPC分类号： H01L29792
CPC分类号： H01L29/792 , H01L29/7923 , Y10S438/954
摘要： A local SONOS structure having a two-piece gate and a self-aligned ONO structure includes: a substrate; an ONO structure on the substrate; a first gate layer on and aligned with the ONO structure; a gate insulator on the substrate aside the ONO structure; and a second gate layer on the first gate layer and on the gate insulator. The first and second gate layers are electrically connected together. Together, the ONO structure and first and second gate layers define at least a 1-bit local SONOS structure. A corresponding method of manufacture includes: providing a substrate; forming an ONO structure on the substrate; forming a first gate layer on and aligned with the ONO structure; forming a gate insulator on the substrate aside the ONO structure; forming a second gate layer on the first gate layer and on the gate insulator; and electrically connecting the first and second gate layers.
摘要翻译：具有两件式门和自对准ONO结构的本地SONOS结构包括：衬底; 基底上的ONO结构; 在ONO结构上并与ONO结构对准的第一栅极层; 衬底上的栅极绝缘体旁边的ONO结构; 以及在第一栅极层上和栅极绝缘体上的第二栅极层。第一和第二栅极层电连接在一起。 ONO结构和第一和第二栅极层一起定义至少1位本地SONOS结构。相应的制造方法包括：提供衬底; 在基板上形成ONO结构; 在ONO结构上形成第一栅极层并与其结合; 在衬底上形成栅极绝缘体，除了ONO结构; 在第一栅极层和栅极绝缘体上形成第二栅极层; 并且电连接第一和第二栅极层。

4. 发明授权

US06884705B2 Semiconductor device having hetero grain stack gate and method of forming the same 失效
标题翻译：具有异质晶粒堆叠栅极的半导体器件及其形成方法
公开(公告)号：US06884705B2
公开(公告)日：2005-04-26
申请号：US10619581
申请日：2003-07-16
申请人： Hwa Sung Rhee , Nae In Lee , Jung Il Lee , Sang Su Kim , Bae Geum Jong
发明人： Hwa Sung Rhee , Nae In Lee , Jung Il Lee , Sang Su Kim , Bae Geum Jong
IPC分类号： H01L21/8238 , H01L21/20 , H01L21/205 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L27/088 , H01L29/423 , H01L29/49 , H01L29/78 , H01L21/3205 , H01L21/4763
CPC分类号： H01L21/2807 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L29/6659
摘要： A semiconductor device includes a hetero grain stack gate (HGSG). The device includes a semiconductor substrate having a surface, a gate insulating layer formed over the surface of the semiconductor substrate, and a gate electrode formed over the gate insulating layer, wherein the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, and an upper poly-Si layer having a random crystalline structure. In one embodiment, the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, an intermediate layer having an random crystalline structure, and an upper poly-Si layer having a columnar crystalline structure. A method of manufacturing a semiconductor device having an HGSG comprises depositing a gate insulating layer over a surface of a semiconductor substrate, depositing a lower poly-SiGe layer having a columnar crystalline structure over the gate insulating layer, depositing an amorphous Si layer over the lower poly-SiGe layer, and crystallizing the amorphous Si layer to obtain an upper poly-Si layer having a random crystalline structure.
摘要翻译：半导体器件包括杂质堆叠栅极（HGSG）。该器件包括具有表面的半导体衬底，形成在半导体衬底的表面上的栅极绝缘层和形成在栅极绝缘层上的栅电极，其中栅极包括具有柱状晶体结构的下部多晶硅层，以及具有无规晶体结构的上部多晶硅层。在一个实施例中，栅电极包括具有柱状晶体结构的下多晶SiGe层，具有无规晶体结构的中间层和具有柱状晶体结构的上多晶硅层。制造具有HGSG的半导体器件的方法包括在半导体衬底的表面上沉积栅极绝缘层，在栅极绝缘层上沉积具有柱状晶体结构的下部多晶硅层，在下部多晶SiGe层，并且使非晶Si层结晶，得到具有无规晶体结构的上多晶硅层。

5. 发明授权

US06667525B2 Semiconductor device having hetero grain stack gate 失效
标题翻译：具有杂质堆叠栅极的半导体器件
公开(公告)号：US06667525B2
公开(公告)日：2003-12-23
申请号：US10086565
申请日：2002-03-04
申请人： Hwa Sung Rhee , Nae In Lee , Jung Il Lee , Sang Su Kim , Bae Geum Jong
发明人： Hwa Sung Rhee , Nae In Lee , Jung Il Lee , Sang Su Kim , Bae Geum Jong
IPC分类号： H01L2976
CPC分类号： H01L21/2807 , H01L21/02381 , H01L21/0245 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L29/6659
摘要： A semiconductor device includes a hetero grain stack gate (HGSG). The device includes a semiconductor substrate having a surface, a gate insulating layer formed over the surface of the semiconductor substrate, and a gate electrode formed over the gate insulating layer, wherein the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, and an upper poly-Si layer having a random crystalline structure. In one embodiment, the gate electrode includes a lower poly-SiGe layer having a columnar crystalline structure, an intermediate layer having an random crystalline structure, and an upper poly-Si layer having a columnar crystalline structure. A method of manufacturing a semiconductor device having an HGSG comprises depositing a gate insulating layer over a surface of a semiconductor substrate, depositing a lower poly-SiGe layer having a columnar crystalline structure over the gate insulating layer, depositing an amorphous Si layer over the lower poly-SiGe layer, and crystallizing the amorphous Si layer to obtain an upper poly-Si layer having a random crystalline structure.
摘要翻译：半导体器件包括杂质堆叠栅极（HGSG）。该器件包括具有表面的半导体衬底，形成在半导体衬底的表面上的栅极绝缘层和形成在栅极绝缘层上的栅电极，其中栅极包括具有柱状晶体结构的下部多晶硅层，以及具有无规晶体结构的上部多晶硅层。在一个实施例中，栅电极包括具有柱状晶体结构的下多晶SiGe层，具有无规晶体结构的中间层和具有柱状晶体结构的上多晶硅层。制造具有HGSG的半导体器件的方法包括在半导体衬底的表面上沉积栅极绝缘层，在栅极绝缘层上沉积具有柱状晶体结构的下部多晶硅层，在下部多晶SiGe层，并且使非晶Si层结晶，得到具有无规晶体结构的上多晶硅层。

6. 发明授权

US09101826B2 Display device for a slot machine 有权
标题翻译：老虎机的显示设备
公开(公告)号：US09101826B2
公开(公告)日：2015-08-11
申请号：US13990571
申请日：2011-11-28
申请人： Kyoung Chan Lee , Sang Su Kim
发明人： Kyoung Chan Lee , Sang Su Kim
IPC分类号： A63F13/00 , G02F1/1335 , G02F1/1347 , G07F17/32 , G02F1/1333
CPC分类号： A63F13/843 , G02F1/133615 , G02F1/1347 , G02F2001/133388 , G07F17/3211 , G07F17/3213 , G07F17/34
摘要： Provided is a display device for a slot machine. The display device for a slot machine includes: a front display part outputting a first image and a rear display part disposed at a rear side of the front display part to output a second image. The second image of the rear display part can be viewed through a predetermined area of the front display part, the front display part includes: a liquid crystal panel, a light guide plate, disposed at a rear side of the liquid crystal panel, the light guide plate having a viewing window at a position corresponding to the predetermined area so that the second image of the rear display part is transmitted, and a light source is disposed around the light guide plate to provide backlight to the liquid crystal panel.
摘要翻译：提供了一种用于老虎机的显示装置。用于老虎机的显示装置包括：输出第一图像的前显示部分和设置在前显示部分的后侧的后显示部分，以输出第二图像。后显示部分的第二图像可以通过前显示部分的预定区域观看，前显示部分包括：液晶面板，配置在液晶面板后侧的导光板，光导板在与预定区域相对应的位置处具有观察窗，使得后显示部分的第二图像被透射，并且光源设置在导光板周围以向液晶面板提供背光。

7. 发明申请

US20130252709A1 DISPLAY DEVICE FOR A SLOT MACHINE 有权
标题翻译：一种槽机的显示装置
公开(公告)号：US20130252709A1
公开(公告)日：2013-09-26
申请号：US13990571
申请日：2011-11-28
申请人： Kyoung Chan Lee , Sang Su Kim
发明人： Kyoung Chan Lee , Sang Su Kim
IPC分类号： A63F13/00
CPC分类号： A63F13/843 , G02F1/133615 , G02F1/1347 , G02F2001/133388 , G07F17/3211 , G07F17/3213 , G07F17/34
摘要： Provided is a display device for a slot machine. The display device for a slot machine includes: a front display part outputting a first image and a rear display part disposed at a rear side of the front display part to output a second image. The second image of the rear display part can be viewed through a predetermined area of the front display part, the front display part includes: a liquid crystal panel, a light guide plate, disposed at a rear side of the liquid crystal panel, the light guide plate having a viewing window at a position corresponding to the predetermined area so that the second image of the rear display part is transmitted, and a light source is disposed around the light guide plate to provide backlight to the liquid crystal panel.
摘要翻译：提供了一种用于老虎机的显示装置。用于老虎机的显示装置包括：输出第一图像的前显示部分和设置在前显示部分的后侧的后显示部分，以输出第二图像。后显示部分的第二图像可以通过前显示部分的预定区域观看，前显示部分包括：液晶面板，配置在液晶面板后侧的导光板，光导板在与预定区域相对应的位置处具有观察窗，使得后显示部分的第二图像被透射，并且光源设置在导光板周围以向液晶面板提供背光。

8. 发明授权

US5696868A Apparatus and method for recording/playing back broadcasting signal 失效
标题翻译：用于记录/播放广播信号的装置和方法
公开(公告)号：US5696868A
公开(公告)日：1997-12-09
申请号：US699198
申请日：1996-08-19
申请人： Sang Su Kim , Young Man Kim , Yong Taek Lim , Se Yong Ro
发明人： Sang Su Kim , Young Man Kim , Yong Taek Lim , Se Yong Ro
IPC分类号： G11B20/00 , G11B20/10 , G11B27/032 , G11B31/00 , H04N5/44 , H04N5/775 , H04N5/782 , H04N5/7826 , H04N5/91 , H04N5/92 , H04N5/783
CPC分类号： H04N5/4448 , G11B27/032 , H04N5/775 , G11B2220/90
摘要： An apparatus and a method for recording/playing back a broadcasting signal wherein the broadcasting signal is separated into a video signal and an audio signal and then written into video and audio signal memories. The video and audio signals are read from the video and audio signal memories if a HISTORY mode key is ON. The operation is ended if a REVIEW key is OFF under the condition that the HISTORY mode key is off. If the REVIEW key is ON the write operation of the video signal into the video signal memory is stopped and it is discriminated whether a JOG key is ON or OFF. A video signalportion of a predetermined previous interval is read from the video signal memory if it is discriminated that the JOG key is OFF. If the JOG key is ON, a read timing signal is generated to read the video signal from the video signal memory according to an operation of the JOG key. The video signal is read from the video signal memory with an address being incremented, if it is discriminated that the JOG key is operated clockwise. If it is discriminated that the JOG key is operated counter-clockwise, the video signal is read from the video signal memory with the address being decremented.
摘要翻译：一种用于记录/播放广播信号的装置和方法，其中广播信号被分成视频信号和音频信号，然后被写入视频和音频信号存储器。如果HISTORY模式键为ON，则从视频和音频信号存储器读取视频和音频信号。如果在历史模式键关闭的条件下REVIEW键为OFF，则操作结束。如果REVIEW键为ON，则视频信号到视频信号存储器的写入操作停止，并且判断JOG键是ON还是OFF。如果判断出JOG键为OFF，则从视频信号存储器读取预先确定的间隔的视频信号。如果JOG键为ON，则产生读取定时信号，以根据JOG键的操作从视频信号存储器读取视频信号。如果判断为顺时针方向操作JOG键，则视频信号从视频信号存储器读取，地址递增。如果判断为逆时针方向操作JOG键，则视频信号从地址递减的视频信号存储器读取。

9. 发明授权

US10663851B2 Stereoscopic image display device 有权
公开(公告)号：US10663851B2
公开(公告)日：2020-05-26
申请号：US16087105
申请日：2017-03-17
申请人： Sang Su Kim , Kim Hung Yu
发明人： Sang Su Kim
IPC分类号： G02B27/28 , G03B21/606 , G02B27/22 , H04N13/363 , H04N13/337 , G02B27/26 , H04N13/332 , G02B5/30
摘要： The present invention relates to a stereoscopic image display through which after the incident light incident from a projector lens is split into different lights according to polarized components, by selectively delaying the phase of each split light by a predetermined value through an on/off operation of an optical switch module, each light is converted to have the same polarized component, and the synthesized light obtained by synthesizing the lights having the same polarized component is projected on a screen so as to double the luminance on the screen.

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