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1. 发明授权

US08188492B2 Light emitting device having plural light emitting diodes and at least one phosphor for emitting different wavelengths of light 有权
标题翻译：具有多个发光二极管和至少一个用于发射不同波长的光的荧光体的发光器件
公开(公告)号：US08188492B2
公开(公告)日：2012-05-29
申请号：US12439052
申请日：2007-08-24
申请人： Sang Min Lee , Hyuck Jung Choi , Mi Hae Kim
发明人： Sang Min Lee , Hyuck Jung Choi , Mi Hae Kim
IPC分类号： H01L33/50
CPC分类号： H01L25/0753 , C09K11/7734 , C09K11/7792 , H01L33/50 , H01L2224/48 , Y02B20/181
摘要： The present invention provides a light emitting device, comprising a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor. According to the present invention, there is provided a white light emitting device, wherein using a light emitting diode for emitting light different in wavelength from light that is ex-cititively emitted from the phosphor, an excitation light source, i.e., light in the ultraviolet region for exciting the phosphor is effectively used, thereby improving energy conversion efficiency and improving reliability.
摘要翻译：本发明提供了一种发光器件，包括用于发射紫外线波长区域的光的第一发光二极管; 至少一个磷光体布置在第一发光二极管周围并被从第一发光二极管发射的光激发，以发射具有比从第一发光二极管发射的光的波长更长的峰值波长的光; 以及至少一个第二发光二极管，用于发射波长不同于从荧光体发出的光的峰值波长的波长的光。根据本发明，提供了一种白光发光装置，其中使用发光二极管发射波长不同于从荧光体中突出出射的光的光，激发光源，即紫外线中的光有效地利用激发荧光体的区域，从而提高能量转换效率并提高可靠性。

2. 发明申请

US20090315053A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20090315053A1
公开(公告)日：2009-12-24
申请号：US12439052
申请日：2007-08-24
申请人： Sang Min Lee , Hyuck Jung Choi , Mi Hae Kim
发明人： Sang Min Lee , Hyuck Jung Choi , Mi Hae Kim
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , C09K11/7734 , C09K11/7792 , H01L33/50 , H01L2224/48 , Y02B20/181
摘要： The present invention provides a light emitting device, comprising a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor. According to the present invention, there is provided a white light emitting device, wherein using a light emitting diode for emitting light different in wavelength from light that is ex-cititively emitted from the phosphor, an excitation light source, i.e., light in the ultraviolet region for exciting the phosphor is effectively used, thereby improving energy conversion efficiency and improving reliability.
摘要翻译：本发明提供了一种发光器件，包括用于发射紫外线波长区域的光的第一发光二极管; 至少一个磷光体布置在第一发光二极管周围并被从第一发光二极管发射的光激发，以发射具有比从第一发光二极管发射的光的波长更长的峰值波长的光; 以及至少一个第二发光二极管，用于发射波长不同于从荧光体发出的光的峰值波长的波长的光。根据本发明，提供了一种白光发光装置，其中使用发光二极管发射波长不同于从荧光体中突出出射的光的光，激发光源，即紫外线中的光有效地利用激发荧光体的区域，从而提高能量转换效率并提高可靠性。

3. 发明申请

US20090272991A1 LIGHT EMITTING DIODE HAVING AlInGaP ACTIVE LAYER AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有AlInGaP活性层的发光二极管及其制造方法
公开(公告)号：US20090272991A1
公开(公告)日：2009-11-05
申请号：US12442511
申请日：2007-09-04
申请人： Chung Hoon Lee , Joe Ho Lee , Mi Hae Kim
发明人： Chung Hoon Lee , Joe Ho Lee , Mi Hae Kim
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L25/0753 , H01L33/62 , H01L2224/48137 , H01L2224/49107
摘要： A light emitting diode having an AlInGaP active layer and a method of fabricating the same are disclosed. The light emitting diode includes a substrate. A plurality of light emitting cells are positioned to be spaced apart from one another, wherein each of the light emitting cells has a first conductive-type lower semiconductor layer, an AlInGaP active layer and a second conductive-type upper semiconductor layer. Meanwhile, a semi-insulating layer is interposed between the substrate and the light emitting cells. Further, wires connect the plurality of light emitting cells in series. Accordingly, it is possible to provide a light emitting diode, in which a plurality of light emitting cells are connected in series to one another through wires to be driven by an AC power source.
摘要翻译：公开了具有AlInGaP有源层的发光二极管及其制造方法。发光二极管包括基板。多个发光单元被定位成彼此间隔开，其中每个发光单元具有第一导电型下半导体层，AlInGaP有源层和第二导电型上半导体层。同时，在衬底和发光单元之间插入半绝缘层。此外，电线串联连接多个发光单元。因此，可以提供一种发光二极管，其中多个发光单元通过由AC电源驱动的导线彼此串联连接。

4. 发明授权

US08350279B2 Light emitting diode having AlInGaP active layer and method of fabricating the same 有权
标题翻译：具有AlInGaP有源层的发光二极管及其制造方法
公开(公告)号：US08350279B2
公开(公告)日：2013-01-08
申请号：US12442511
申请日：2007-09-04
申请人： Chung Hoon Lee , Jae Ho Lee , Mi Hae Kim
发明人： Chung Hoon Lee , Jae Ho Lee , Mi Hae Kim
IPC分类号： H01L29/26 , H01L29/22
CPC分类号： H01L27/153 , H01L25/0753 , H01L33/62 , H01L2224/48137 , H01L2224/49107
摘要： A light emitting diode having an AlInGaP active layer and a method of fabricating the same are disclosed. The light emitting diode includes a substrate. A plurality of light emitting cells are positioned to be spaced apart from one another, wherein each of the light emitting cells has a first conductive-type lower semiconductor layer, an AlInGaP active layer and a second conductive-type upper semiconductor layer. Meanwhile, a semi-insulating layer is interposed between the substrate and the light emitting cells. Further, wires connect the plurality of light emitting cells in series. Accordingly, it is possible to provide a light emitting diode, in which a plurality of light emitting cells are connected in series to one another through wires to be driven by an AC power source.
摘要翻译：公开了具有AlInGaP有源层的发光二极管及其制造方法。发光二极管包括基板。多个发光单元被定位成彼此间隔开，其中每个发光单元具有第一导电型下半导体层，AlInGaP有源层和第二导电型上半导体层。同时，在衬底和发光单元之间插入半绝缘层。此外，电线串联连接多个发光单元。因此，可以提供一种发光二极管，其中多个发光单元通过由AC电源驱动的导线彼此串联连接。

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