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    • 7. 发明授权
    • Method and apparatus for vehicle driving guide
    • 车辆驾驶导轨的方法和装置
    • US08115652B2
    • 2012-02-14
    • US12360546
    • 2009-01-27
    • Kang Lee
    • Kang Lee
    • G08G1/09
    • G08G1/0104G08G1/04G08G1/096716G08G1/096741G08G1/096775
    • A method and an apparatus for vehicle driving guide with lamps are applied to a target road. The apparatus has a traffic condition detection module, multiple indication lamps and a signal control module. The traffic condition detection module obtains a traffic condition. The indication lamps are mounted separately on the target road. The signal control module is electrically connected to the traffic condition detection module and the indication lamps and operates the indication lamps according to a control process based on different traffic conditions. The control process may be in a chase mode that sequentially pulses the indication lamps on with a regulated moving direction of the target road with a pulse interval between turning the indication lamps on to present an impression that the lights are moving at an indicator speed. The impression allows drivers in vehicles on the target road to follow to drive.
    • 将具有灯的车辆驾驶引导件的方法和装置应用于目标道路。 该装置具有交通状况检测模块,多个指示灯和信号控制模块。 交通状况检测模块获取交通状况。 指示灯分别安装在目标道路上。 信号控制模块电连接到交通状况检测模块和指示灯,并根据不同的交通状况根据控制过程操作指示灯。 控制过程可以是追逐模式,其以指示灯开启之间的脉冲间隔以目标道路的调节移动方向顺序地脉冲显示灯,以呈现灯以指示器速度移动的印象。 该印象允许目标道路上的车辆驾驶员驾驶。
    • 9. 发明申请
    • Method for fabricating a semiconductor device
    • 半导体器件的制造方法
    • US20070049039A1
    • 2007-03-01
    • US11320977
    • 2005-12-30
    • Jeong JangKang Lee
    • Jeong JangKang Lee
    • H01L21/461
    • H01L21/32139H01L21/31116H01L21/31138
    • Method for fabricating a semiconductor device in which a by-product of etching is deposited on a photoresist film for using as a mask. The method for fabricating a semiconductor device includes the steps of depositing a polysilicon, and a bottom anti-refection coating on an entire surface of a substrate in succession, forming a photoresist film pattern on a predetermined portion of the bottom anti-refection coating, etching the bottom anti-refection coating by using the photoresist film pattern to deposit by-product of the etching on sidewalls of the photoresist pattern to form spacers, and etching the polysilicon by using the photoresist film pattern and the spacers, to form a line.
    • 制造半导体器件的方法,其中蚀刻副产物沉积在用作掩模的光致抗蚀剂膜上。 制造半导体器件的方法包括以下步骤:在基片的整个表面上依次沉积多晶硅和底部抗反射涂层,在底部抗反射涂层的预定部分上形成光致抗蚀剂膜图案,蚀刻 通过使用光致抗蚀剂膜图案沉积蚀刻的副产物的底部抗反射涂层以形成间隔物,并且通过使用光致抗蚀剂膜图案和间隔物蚀刻多晶硅以形成线。