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1. 发明授权

US08294219B2 Nonvolatile memory element including resistive switching metal oxide layers 有权
标题翻译：非易失性存储元件包括电阻式开关金属氧化物层
公开(公告)号：US08294219B2
公开(公告)日：2012-10-23
申请号：US12179538
申请日：2008-07-24
申请人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
发明人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
IPC分类号： H01L21/02
CPC分类号： H01L45/1608 , H01L27/2418 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641
摘要： Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.
摘要翻译：提供了基于电阻式开关存储元件层的非易失性存储元件。非易失性存储元件可以具有电阻性开关金属氧化物层。电阻式开关金属氧化物层可以具有一层或多层氧化物。电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。可以形成层以增强非易失性存储元件的热稳定性。用于非易失性存储元件的电极可以包含导电层和缓冲层。

2. 发明申请

US20120122291A1 Nonvolatile Memory Elements 有权
标题翻译：非易失性存储元件
公开(公告)号：US20120122291A1
公开(公告)日：2012-05-17
申请号：US13337611
申请日：2011-12-27
申请人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
发明人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
IPC分类号： H01L21/02
CPC分类号： H01L45/1608 , H01L27/2418 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641
摘要： Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.
摘要翻译：提供了基于电阻式开关存储元件层的非易失性存储元件。非易失性存储元件可以具有电阻性开关金属氧化物层。电阻式开关金属氧化物层可以具有一层或多层氧化物。电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。可以形成层以增强非易失性存储元件的热稳定性。用于非易失性存储元件的电极可以包含导电层和缓冲层。

3. 发明申请

US20090026434A1 NONVOLATILE MEMORY ELEMENTS 有权
标题翻译：非易失性存储元件
公开(公告)号：US20090026434A1
公开(公告)日：2009-01-29
申请号：US12179538
申请日：2008-07-24
申请人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
发明人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/1608 , H01L27/2418 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641
摘要： Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.
摘要翻译：提供了基于电阻式开关存储元件层的非易失性存储元件。非易失性存储元件可以具有电阻性开关金属氧化物层。电阻式开关金属氧化物层可以具有一层或多层氧化物。电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。可以形成层以增强非易失性存储元件的热稳定性。用于非易失性存储元件的电极可以包含导电层和缓冲层。

4. 发明授权

US08318573B2 Nonvolatile memory elements 有权
标题翻译：非易失性存储元件
公开(公告)号：US08318573B2
公开(公告)日：2012-11-27
申请号：US13337611
申请日：2011-12-27
申请人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
发明人： Sandra G. Malhotra , Pragati Kumar , Sean Barstow , Tony Chiang , Prashant B. Phatak , Wen Wu , Sunil Shanker
IPC分类号： H01L21/02
CPC分类号： H01L45/1608 , H01L27/2418 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/1625 , H01L45/1641
摘要： Nonvolatile memory elements that are based on resistive switching memory element layers are provided. A nonvolatile memory element may have a resistive switching metal oxide layer. The resistive switching metal oxide layer may have one or more layers of oxide. A resistive switching metal oxide may be doped with a dopant that increases its melting temperature and enhances its thermal stability. Layers may be formed to enhance the thermal stability of the nonvolatile memory element. An electrode for a nonvolatile memory element may contain a conductive layer and a buffer layer.
摘要翻译：提供了基于电阻式开关存储元件层的非易失性存储元件。非易失性存储元件可以具有电阻性开关金属氧化物层。电阻式开关金属氧化物层可以具有一层或多层氧化物。电阻式开关金属氧化物可以掺杂有增加其熔融温度并增强其热稳定性的掺杂剂。可以形成层以增强非易失性存储元件的热稳定性。用于非易失性存储元件的电极可以包含导电层和缓冲层。

5. 发明申请

US20120074376A1 NONVOLATILE MEMORY ELEMENTS WITH METAL DEFICIENT RESISTIVE SWITCHING METAL OXIDES 有权
标题翻译：金属不良电阻开关金属氧化物的非易失性存储元件
公开(公告)号：US20120074376A1
公开(公告)日：2012-03-29
申请号：US13312061
申请日：2011-12-06
申请人： Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang , Prashant B. Phatak
发明人： Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang , Prashant B. Phatak
IPC分类号： H01L47/00
CPC分类号： G11C13/0007 , G11C2213/32 , G11C2213/52 , G11C2213/72 , G11C2213/73 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1608
摘要： Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.
摘要翻译：提供具有电阻开关金属氧化物的非易失性存储元件。非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。含金属材料可以被氧化以形成电阻式开关金属氧化物。当施加热量时，含硅材料中的硅与含金属材料中的金属反应。这形成用于非易失性存储元件的金属硅化物下电极。上部电极可以沉积在金属氧化物的顶部。由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

6. 发明授权

US08097878B2 Nonvolatile memory elements with metal-deficient resistive-switching metal oxides 有权
标题翻译：具有金属缺陷电阻开关金属氧化物的非易失性存储元件
公开(公告)号：US08097878B2
公开(公告)日：2012-01-17
申请号：US11714326
申请日：2007-03-05
申请人： Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang , Prashant B. Phatak
发明人： Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang , Prashant B. Phatak
IPC分类号： H01L29/12 , H01L29/02
CPC分类号： G11C13/0007 , G11C2213/32 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1608
摘要： Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.
摘要翻译：提供具有电阻开关金属氧化物的非易失性存储元件。非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。含金属材料可以被氧化以形成电阻式开关金属氧化物。当施加热量时，含硅材料中的硅与含金属材料中的金属反应。这形成用于非易失性存储元件的金属硅化物下电极。上部电极可以沉积在金属氧化物的顶部。由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

7. 发明授权

US07629198B2 Methods for forming nonvolatile memory elements with resistive-switching metal oxides 有权
标题翻译：用电阻式开关金属氧化物形成非易失性存储元件的方法
公开(公告)号：US07629198B2
公开(公告)日：2009-12-08
申请号：US11714334
申请日：2007-03-05
申请人： Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang , Prashant B. Phatak
发明人： Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang , Prashant B. Phatak
IPC分类号： H01L21/00 , H01L21/16
CPC分类号： H01L45/04 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1608
摘要： Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.
摘要翻译：提供具有电阻开关金属氧化物的非易失性存储元件。非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。含金属材料可以被氧化以形成电阻式开关金属氧化物。当施加热量时，含硅材料中的硅与含金属材料中的金属反应。这形成用于非易失性存储元件的金属硅化物下电极。上部电极可以沉积在金属氧化物的顶部。由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

8. 发明申请

US20080220601A1 Methods for forming nonvolatile memory elements with resistive-switching metal oxides 有权
标题翻译：用电阻式开关金属氧化物形成非易失性存储元件的方法
公开(公告)号：US20080220601A1
公开(公告)日：2008-09-11
申请号：US11714334
申请日：2007-03-05
申请人： Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang , Prashant B. Phatak
发明人： Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang , Prashant B. Phatak
IPC分类号： H01L21/20 , H01L21/4763
CPC分类号： H01L45/04 , H01L27/2463 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1608
摘要： Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.
摘要翻译：提供具有电阻开关金属氧化物的非易失性存储元件。非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。含金属材料可以被氧化以形成电阻式开关金属氧化物。当施加热量时，含硅材料中的硅与含金属材料中的金属反应。这形成用于非易失性存储元件的金属硅化物下电极。上部电极可以沉积在金属氧化物的顶部。由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

9. 发明授权

US08386210B2 Combinatorial process optimization methodology and system 失效
公开(公告)号：US08386210B2
公开(公告)日：2013-02-26
申请号：US13274621
申请日：2011-10-17
申请人： Prashant B. Phatak
发明人： Prashant B. Phatak
IPC分类号： G06F19/00
CPC分类号： G05B19/41865 , G05B2219/32015 , G05B2219/45031 , Y02P90/20 , Y02P90/26
摘要： A method for obtaining an optimized process solution from a set of design of experiments in a cost effective manner is provided. An actual experiment is performed and data from the experiments is obtained. Through statistical analysis of the data, coefficients are obtained. These coefficients are input into an experiment simulator where input parameters and conditions are combined with the coefficients to predict an output for the input parameters and conditions. From simulated results, conclusions can be drawn as to sets of input parameters and conditions providing desired results. Thereafter, physical experiments utilizing the input parameters and conditions may be performed to verify the simulated results.

10. 发明授权

US08065107B1 Combinatorial process optimization methodology and system 有权
标题翻译：组合过程优化方法和系统
公开(公告)号：US08065107B1
公开(公告)日：2011-11-22
申请号：US12248850
申请日：2008-10-09
申请人： Prashant B. Phatak
发明人： Prashant B. Phatak
IPC分类号： G01L15/00
CPC分类号： G05B19/41865 , G05B2219/32015 , G05B2219/45031 , Y02P90/20 , Y02P90/26
摘要： A method for obtaining an optimized process solution from a set of design of experiments in a cost effective manner is provided. An actual experiment is performed and data from the experiments is obtained. Through statistical analysis of the data, coefficients are obtained. These coefficients are input into an experiment simulator where input parameters and conditions are combined with the coefficients to predict an output for the input parameters and conditions. From simulated results, conclusions can be drawn as to sets of input parameters and conditions providing desired results. Thereafter, physical experiments utilizing the input parameters and conditions may be performed to verify the simulated results.
摘要翻译：提供了一种以成本有效的方式从一组实验设计中获得优化的处理方案的方法。执行实际实验并获得实验数据。通过数据的统计分析，得到系数。这些系数被输入到实验模拟器中，其中输入参数和条件与系数组合以预测输入参数和条件的输出。从模拟结果可以得出结论，输入参数和条件的集合提供所需的结果。此后，可以执行利用输入参数和条件的物理实验来验证模拟结果。

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