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1. 发明专利

JP2012146390A Method, system, and computer-readable code for testing flash memory 有权
标题翻译：用于测试闪存的方法，系统和计算机可读代码
公开(公告)号：JP2012146390A
公开(公告)日：2012-08-02
申请号：JP2012048160
申请日：2012-03-05
申请人： Sandisk Il Ltd , サンディスクアイエルリミテッド
发明人： MARC MLYN , RUSSELL MENACHEM , MEIR AVRAHAM
IPC分类号： G11C29/12 , G06F12/16
CPC分类号： G11C29/16 , G11C11/5621 , G11C16/04 , G11C2029/0401
摘要： PROBLEM TO BE SOLVED: To provide a method, a system, and a device for testing a flash memory die.SOLUTION: In a post-wafer-sorting stage of device manufacture, a plurality of flash memory devices which each include a flash controller die related to a common housing and at least one flash memory die are passed to a test process such as a batch test process or mass test process. During a test, at least one test program is executed which allows a flash controller on each flash controller die to test one or more flash memory dies of each flash device. Disclosed is a test system including at least 100 flash memory devices and a mass test board. Further, disclosed is a flash memory device which is operative such that a flash controller tests one or more flash memory dies. A model test includes a defective block test.
摘要翻译：要解决的问题：提供一种用于测试闪存芯片的方法，系统和设备。解决方案：在器件制造的晶片间分选阶段，每个包括与公共壳体和至少一个闪速存储器管芯相关的闪存控制器管芯的多个闪存器件被传递到诸如批次测试过程或批量测试过程。在测试期间，执行至少一个测试程序，其允许每个闪存控制器管芯上的闪存控制器测试每个闪存设备的一个或多个闪存存储器管芯。公开了一种包括至少100个闪存设备和质量测试板的测试系统。此外，公开了一种闪存设备，其操作使得闪存控制器测试一个或多个闪存存储器管芯。模型测试包括有缺陷的块测试。版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2011258236A Nand flash memory system architecture 审中-公开
标题翻译： NAND闪存系统架构
公开(公告)号：JP2011258236A
公开(公告)日：2011-12-22
申请号：JP2011198168
申请日：2011-09-12
申请人： Sandisk Il Ltd , サンディスクアイエルリミテッド
发明人： ABRAHAM MEIR , MOSQUE AMIR , ROHL AMIR , RUSSELL MENACHEM
IPC分类号： G06F12/06 , G06F12/00 , G06F12/02
CPC分类号： G06F9/44573 , G06F3/0611 , G06F3/0632 , G06F3/0679 , G06F9/4403 , G06F9/4406 , G06F12/0246 , G06F12/0292 , G06F12/10 , G06F2212/2022 , G06F2212/7201 , G06F2212/7203
摘要： PROBLEM TO BE SOLVED: To obtain a data storage device for offering both memory management based on a controller and boot support.SOLUTION: A data storage device includes a NAND flash memory, an executable interface, and a controller for receiving, from a host, via the executable interface, an instruction to access a NAND flash memory at a virtual address and for translating the virtual address to a physical address of the volatile memory. Preferably, the controller also provides boot functionality to the host.
摘要翻译：要解决的问题：获得一种数据存储设备，用于提供基于控制器和引导支持的存储器管理。解决方案：数据存储设备包括NAND闪存，可执行接口和控制器，用于从主机经由可执行接口接收以虚拟地址访问NAND闪存的指令，并且用于将虚拟地址到易失性存储器的物理地址。优选地，控制器还向主机提供引导功能。版权所有（C）2012，JPO＆INPIT

3. 发明专利

JP2011238346A Method for restoration from error in flash memory 审中-公开
标题翻译：从闪存存储器中的错误恢复的方法
公开(公告)号：JP2011238346A
公开(公告)日：2011-11-24
申请号：JP2011133901
申请日：2011-06-16
申请人： Sandisk Il Ltd , サンディスクアイエルリミテッド
发明人： RUSSELL MENACHEM , MARC MLYN
IPC分类号： G11C16/02 , G06F12/16 , G11C16/06 , G11C29/42
摘要： PROBLEM TO BE SOLVED: To provide a method, a device and a computer-readable code for reading data out of one or more flash memory cells and for restoration from a reading error.SOLUTION: In the event of failure to correct an error by an error detection and correction module, re-reading out of a flash memory cell is attempted at least once by using one or more correction reference voltages. For some time after the error is successfully corrected, no data (for instance a reliable value of data that have been read out) are re-written in, and subsequent read-out requests are processed. The reference voltage regarding the reading for which the error was corrected may be stored in a memory to be read out when responding to any request for read-out. The reference voltage for correction is a predetermined reference voltage. Or it may be determined by using a value figured out at random as required or according to information provided by the error detection and correction module.
摘要翻译：要解决的问题：提供一种用于从一个或多个闪存单元读取数据并从读取错误中恢复的方法，设备和计算机可读代码。解决方案：在错误检测和校正模块无法纠正错误的情况下，通过使用一个或多个校正参考电压，至少尝试重新读出闪存单元。在错误成功纠正之后的某段时间内，不会重写任何数据（例如已读出的数据的可靠值），并处理随后的读出请求。关于纠错错误的读数的参考电压可以在响应任何读出请求时存储在存储器中以被读出。用于校正的参考电压是预定的参考电压。或者可以根据需要随机地根据错误检测和校正模块提供的信息使用计算出的值来确定。版权所有（C）2012，JPO＆INPIT

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