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1. 发明授权

US5897979A Method of forming multiple layer attenuating phase shifting masks 失效
标题翻译：形成多层衰减相移掩模的方法
公开(公告)号：US5897979A
公开(公告)日：1999-04-27
申请号：US33433
申请日：1998-03-02
申请人： San-De Tzu , Jia-Jing Wang , Chin-Chiang Tu , Wen-Hong Huang
发明人： San-De Tzu , Jia-Jing Wang , Chin-Chiang Tu , Wen-Hong Huang
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/142
摘要： This invention describes a new method of forming a double layer attenuating phase shifting mask. A first pattern is formed in a layer of attenuating phase shifting material and an alignment pattern is formed in a layer of opaque material. A first resist is used to form the first pattern. A pellicle is used to restrict the deposition of a second resist to the alignment region of the mask only and as a result neither the first resist nor the second resist must withstand dry etching steps. The first resist is removed before the step of forming the first pattern in the attenuating phase shifting material and cleaning before is step is carried out is thereby improved.
摘要翻译：本发明描述了形成双层衰减相移掩模的新方法。在衰减相移材料层中形成第一图案，并且在不透明材料层中形成对准图案。使用第一抗蚀剂来形成第一图案。防护薄膜组件仅用于限制第二抗蚀剂沉积到掩模的对准区域，因此第一抗蚀剂和第二抗蚀剂都不能经受干蚀刻步骤。在衰减相移材料中形成第一图案的步骤之前去除第一抗蚀剂，从而提高步骤之前的清洁。

2. 发明授权

US5792578A Method of forming multiple layer attenuating phase shifting masks 失效
标题翻译：形成多层衰减相移掩模的方法
公开(公告)号：US5792578A
公开(公告)日：1998-08-11
申请号：US782705
申请日：1997-01-13
申请人： San-De Tzu , Jia-Jing Wang , Chih-Chiang Tu , Wen-Hong Huang
发明人： San-De Tzu , Jia-Jing Wang , Chih-Chiang Tu , Wen-Hong Huang
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/142
摘要： This invention describes a new method of forming a double layer attenuating phase shifting mask. A first pattern is formed in a layer of attenuating phase shifting material and an alignment pattern is formed in a layer of opaque material. A first resist is used to form the first pattern. A pellicle is used to restrict the deposition of a second resist to the alignment region of the mask only and as a result neither the first resist nor the second resist must withstand dry etching steps. The first resist is removed before the step of forming the first pattern in the attenuating phase shifting material and cleaning before this step is carried out is thereby improved.
摘要翻译：本发明描述了形成双层衰减相移掩模的新方法。在衰减相移材料层中形成第一图案，并且在不透明材料层中形成对准图案。使用第一抗蚀剂来形成第一图案。防护薄膜组件仅用于限制第二抗蚀剂沉积到掩模的对准区域，因此第一抗蚀剂和第二抗蚀剂都不能经受干蚀刻步骤。因此，在进行衰减相变材料的形成第一图案的步骤之前和在进行该步骤之前的清洁之前，第一抗蚀剂被去除。

3. 发明授权

US5888678A Mask and simplified method of forming a mask integrating attenuating phase shifting mask patterns and binary mask patterns on the same mask substrate 失效
标题翻译：掩模和简化的形成掩模的方法，其将衰减相移掩模图案和二进制掩模图案集成在相同的掩模基板上
公开(公告)号：US5888678A
公开(公告)日：1999-03-30
申请号：US20502
申请日：1998-02-09
申请人： San-De Tzu , Chia-Hui Lin , Wen-Hong Huang , Ching-Chia Lin
发明人： San-De Tzu , Chia-Hui Lin , Wen-Hong Huang , Ching-Chia Lin
IPC分类号： G03F1/00 , G03F1/29 , G03F9/00
CPC分类号： G03F1/29
摘要： A mask and a method of forming a mask having a binary mask pattern in a first region of a transparent mask substrate and a rim type attenuating phase shifting mask pattern in a second region of the same transparent mask substrate. The rim type attenuating phase shifting mask pattern is used to form small contact holes and the binary mask pattern is used to form larger contact holes in an integrated circuit wafer. The use of the rim type attenuating phase shifting mask pattern and the binary mask pattern avoids the problems due to side lobe effect for cases where different size contact holes are required on the same layer in an integrated circuit wafer. The formation of the rim type attenuating phase shifting mask pattern and the binary mask pattern on the same transparent mask substrate increases throughput and decreases cost in the fabrication of integrated circuit wafers.
摘要翻译：在相同的透明掩模基板的第二区域中，在透明掩模基板的第一区域中形成具有二元掩模图案的掩模和边缘型衰减相移掩模图案的掩模和方法。边缘型衰减相移掩模图案用于形成小的接触孔，并且二进制掩模图案用于在集成电路晶片中形成更大的接触孔。使用边缘型衰减相移掩模图案和二进制掩模图案避免了在集成电路晶片的同一层上需要不同尺寸的接触孔的情况下由于旁瓣效应引起的问题。在相同的透明掩模基板上形成边缘型衰减相移掩模图案和二进制掩模图案增加了集成电路晶片的制造中的吞吐量并降低了成本。

4. 发明授权

US5783337A Process to fabricate a double layer attenuated phase shift mask (APSM) with chrome border 失效
标题翻译：制造具有镀铬边框的双层衰减相移掩模（APSM）的工艺
公开(公告)号：US5783337A
公开(公告)日：1998-07-21
申请号：US856786
申请日：1997-05-15
申请人： San-De Tzu , Chih-Chiang Tu , Wen-Hong Huang , Chia-Hui Lin
发明人： San-De Tzu , Chih-Chiang Tu , Wen-Hong Huang , Chia-Hui Lin
IPC分类号： G03F1/32 , G03F9/00
CPC分类号： G03F1/32
摘要： A new process for fabricating an attenuated phase-shifting photomask is described. A photomask blank is provided comprising a phase-shifting layer overlying a substrate, a chromium layer overlying the phase-shifting layer, and a resist layer overlying the chromium layer. The resist layer of the photomask blank is exposed to electron-beam energy wherein a main pattern area of the photomask blank is exposed to a first dosage of the electron-beam energy and wherein a border area surrounding the main pattern area is not exposed to the electron-beam energy and wherein a secondary pattern area between the main pattern area and the border area is exposed to a second dosage of electron-beam energy wherein the second dosage is lower than the first dosage. The exposed resist layer is developed wherein the resist within the main pattern area is removed to expose the chromium layer. The exposed chromium layer is etched through to expose the underlying phase-shifting layer. The exposed phase-shifting layer is etched through to expose the substrate. The resist overlying the chromium layer within the secondary pattern area is etched away. The chromium layer within the secondary pattern area is etched away. The resist within the border area is stripped away to leave a patterned phase-shifting layer in the main pattern area and a chromium layer in the border area to complete fabrication of the attenuated phase-shifting photomask.
摘要翻译：描述了制造衰减相移光掩模的新工艺。提供了一种光掩模坯料，其包括覆盖衬底的相移层，覆盖在相移层上的铬层和覆盖在铬层上的抗蚀剂层。光掩模坯料的抗蚀剂层暴露于电子束能量，其中光掩模坯料的主图案区域暴露于第一剂量的电子束能量，并且其中围绕主图案区域的边界区域不暴露于电子束能量，其中主图案区域和边界区域之间的次级图案区域暴露于第二剂量的电子束能量，其中第二剂量低于第一剂量。显影曝光的抗蚀剂层，其中去除主图案区域内的抗蚀剂以暴露铬层。暴露的铬层被蚀刻通过以暴露下面的相移层。暴露的相移层被蚀刻以暴露衬底。覆盖二次图案区域内的铬层的抗蚀剂被蚀刻掉。二次图案区域内的铬层被蚀刻掉。边界区域内的抗蚀剂被剥离，在主图案区域中留下图案化的相移层和边界区域中的铬层，以完成衰减的相移光掩模的制造。

5. 发明授权

US06660436B1 OPC-like repair method for attenuated phase shift masks 有权
标题翻译：用于衰减相移掩模的类OPC修复方法
公开(公告)号：US06660436B1
公开(公告)日：2003-12-09
申请号：US09953609
申请日：2001-09-17
申请人： Same-Ting Chen , Wen-Hong Huang , Wen-Reng Huang
发明人： Same-Ting Chen , Wen-Hong Huang , Wen-Reng Huang
IPC分类号： G03F900
CPC分类号： G03F1/72 , G03F1/26 , G03F1/36
摘要： A new process for repairing an attenuated phase-shifting photomask is described. A contact hole pattern is provided on an attenuating phase-shifting photomask. An aerial image is obtained of the contact hole pattern. The critical dimension of the contact hole pattern is predicted from the intensity of the aerial image. Thereafter, the critical dimension is adjusted by forming non-printable optical proximity or scattering bar correction patterns around abnormal defects in the contact hole pattern on the attenuated phase-shifting photomask. The non-printable correction patterns enhance or cancel light intensity to correct the adnormal defects.
摘要翻译：描述了修复衰减相移光掩模的新工艺。在衰减的相移光掩模上设置接触孔图案。获得接触孔图案的空中图像。接触孔图案的临界尺寸是根据空中图像的强度预测的。此后，通过在衰减的相移光掩模上的接触孔图案中的异常缺陷周围形成不可打印的光学邻近或散射棒校正图案来调整临界尺寸。不可打印的校正图案增强或消除光强度以校正异常缺陷。

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