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1. 发明申请

US20110268884A1 FORMATION OF NANOSCALE CARBON NANOTUBE ELECTRODES USING A SELF-ALIGNED NANOGAP MASK 审中-公开
标题翻译：使用自对准NANOGAP掩模形成纳米碳纳米管电极
公开(公告)号：US20110268884A1
公开(公告)日：2011-11-03
申请号：US13098957
申请日：2011-05-02
申请人： Samuel Jonas Wind , Jinyao Tang , James C. Hone , Yuyao Shan
发明人： Samuel Jonas Wind , Jinyao Tang , James C. Hone , Yuyao Shan
IPC分类号： B05D3/14 , B82Y40/00
CPC分类号： B82Y40/00 , B82Y10/00 , H01L51/0048 , H01L51/102
摘要： A first single-wall carbon nanotube can be electrically coupled to a first electrode, and a second single-wall carbon nanotube electrically coupled to a second electrode. In an example, the first and second single-wall carbon nanotubes are laterally separated by a nanoscale gap, such as sized and shaped for insertion of a single molecule.
摘要翻译：第一单壁碳纳米管可以电耦合到第一电极和电耦合到第二电极的第二单壁碳纳米管。在一个实例中，第一和第二单壁碳纳米管被纳米级间隙横向分开，例如尺寸和形状以插入单个分子。

2. 发明授权

US08168534B2 Methods of fabricating electrodes and uses thereof 有权
标题翻译：制造电极的方法及其用途
公开(公告)号：US08168534B2
公开(公告)日：2012-05-01
申请号：US12945424
申请日：2010-11-12
申请人： Jinyao Tang , Samuel Jonas Wind
发明人： Jinyao Tang , Samuel Jonas Wind
IPC分类号： H01L21/441 , H01L51/40
CPC分类号： H01L51/102 , H01L21/31683 , H01L51/0083 , H01L51/0545 , Y10S977/89 , Y10S977/893 , Y10T29/49117
摘要： The present invention relates to methods for fabricating nanoscale electrodes separated by a nanogap, wherein the gap size may be controlled with high precision using a self-aligning aluminum oxide mask, such that the gap width depends upon the thickness of the aluminum oxide mask. The invention also provides methods for using the nanoscale electrodes.
摘要翻译：本发明涉及用纳米隙分离的纳米尺度电极的制造方法，其中使用自对准氧化铝掩模可以高精度地控制间隙尺寸，使得间隙宽度取决于氧化铝掩模的厚度。本发明还提供了使用纳米级电极的方法。

3. 发明授权

US09108850B2 Preparing nanoparticles and carbon nanotubes 有权
标题翻译：制备纳米颗粒和碳纳米管
公开(公告)号：US09108850B2
公开(公告)日：2015-08-18
申请号：US13299875
申请日：2011-11-18
申请人： Stephen O'Brien , Limin Huang , Brian Edward White , Samuel Jonas Wind
发明人： Stephen O'Brien , Limin Huang , Brian Edward White , Samuel Jonas Wind
IPC分类号： B05D3/02 , C01B31/02 , B82Y30/00 , B82Y40/00
CPC分类号： C01B31/0233 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/02 , C01B2202/34 , C01B2202/36 , Y10T428/24802
摘要： Apparatus and methods for forming the apparatus include nanoparticles, catalyst nanoparticles, carbon nanotubes generated from catalyst nanoparticles, and methods of fabrication of such nanoparticles and carbon nanotubes.
摘要翻译：用于形成装置的装置和方法包括纳米颗粒，催化剂纳米颗粒，由催化剂纳米颗粒产生的碳纳米管，以及制备这种纳米颗粒和碳纳米管的方法。

4. 发明授权

US6035113A Electron beam proximity correction method for hierarchical design data 失效
标题翻译：用于层次设计数据的电子束接近校正方法
公开(公告)号：US6035113A
公开(公告)日：2000-03-07
申请号：US002841
申请日：1998-01-05
申请人： Porter Dean Gerber , Samuel Jonas Wind
发明人： Porter Dean Gerber , Samuel Jonas Wind
IPC分类号： H01J37/302 , G06F17/50
CPC分类号： H01J37/3023 , H01J2237/31769
摘要： A method for formulating an exposure dose for an electron beam on a resist film for a pattern of geometric shapes which compensates for electron scattering effects utilizing hierarchial design data which is preserved to as great as an extent as possible in the computation of the exposure dose. The exposure dose is corrected for both the forward scatter and backscatter effects of the electron beam in which the design data is modified for interactions of shapes which are affected only over the forward scatter range. In another version of the method, a multiple Gaussian approximation is used where the short term Gaussian terms are treated as the forward scatter terms and the long term Gaussian terms are treated as the back scatter terms.
摘要翻译：用于在抗蚀剂膜上形成用于几何形状图案的电子束的曝光剂量的方法，其利用在计算曝光剂量时尽可能地保持尽可能大的程度的层次设计数据来补偿电子散射效应。电子束的前向散射和反向散射效应的曝光剂量被校正，其中设计数据被修改用于仅在前向散射范围内影响的形状的相互作用。在该方法的另一个版本中，使用多高斯近似，其中短期高斯项被视为前向散射项，长期高斯项被视为后向散射项。

5. 发明申请

US20110111178A1 STRUCTURES HAVING AN ADJUSTED MECHANICAL PROPERTY 审中-公开
标题翻译：具有调整机械性能的结构
公开(公告)号：US20110111178A1
公开(公告)日：2011-05-12
申请号：US12936025
申请日：2009-04-02
申请人： Samuel Jonas Wind , Michael P. Sheetz , Teresa Anne Fazio
发明人： Samuel Jonas Wind , Michael P. Sheetz , Teresa Anne Fazio
IPC分类号： B32B3/30 , G21G5/00
CPC分类号： C08J7/123 , C08J2383/04 , Y10T428/24595
摘要： In various embodiments, the properties of a cross-linkable polymer can be changed by modifying the degree of cross-linking. The degree of cross-linking can be modified on a localized basis using lithographic patterns in which the cross-linkable polymer can be selectively and controllably subjected to charged particles or electromagnetic radiation. The modification of the degree of cross-linking can be applied to substrates having surfaces with varying geometric forms.
摘要翻译：在各种实施方案中，可交联聚合物的性质可以通过改变交联度来改变。可以使用其中可交联聚合物可选择性且可控地经受带电粒子或电磁辐射的光刻图案在局部基础上修饰交联度。交联度的改进可以应用于具有不同几何形状的表面的基材。

6. 发明授权

US5757038A Self-aligned dual gate MOSFET with an ultranarrow channel 失效
标题翻译：具有超窄通道的自对准双栅极MOSFET
公开(公告)号：US5757038A
公开(公告)日：1998-05-26
申请号：US554558
申请日：1995-11-06
申请人： Sandip Tiwari , Samuel Jonas Wind
发明人： Sandip Tiwari , Samuel Jonas Wind
IPC分类号： H01L21/336 , H01L29/786 , H01L31/0328 , H01L29/80 , H01L31/0336
CPC分类号： H01L29/7827 , B82Y10/00 , H01L29/66666 , H01L29/78609 , H01L29/78642 , H01L21/2815 , H01L29/42376 , H01L29/7613 , H01L29/775
摘要： A dual gate field effect transistor with an ultra thin channel of substantially uniform width formed by a self-aligned process utilizing selective etching or controlled oxidation between different materials to form a vertical channel extending between source and drain regions, having a thickness in the range from 2.5 nm to 100 nm.
摘要翻译：具有基本上均匀宽度的超薄通道的双栅场效应晶体管通过自对准工艺形成，其利用不同材料之间的选择性蚀刻或受控氧化形成在源区和漏区之间延伸的垂直沟道，其厚度范围为 2.5nm至100nm。

7. 发明授权

US5739057A Method of making self-aligned dual gate MOSFET with an ultranarrow channel 失效
标题翻译：制造具有超窄沟道的自对准双栅极MOSFET的方法
公开(公告)号：US5739057A
公开(公告)日：1998-04-14
申请号：US634342
申请日：1996-04-18
申请人： Sandip Tiwari , Samuel Jonas Wind
发明人： Sandip Tiwari , Samuel Jonas Wind
IPC分类号： H01L21/336 , H01L29/786 , H01L21/338
CPC分类号： H01L29/7827 , B82Y10/00 , H01L29/66666 , H01L29/78609 , H01L29/78642 , H01L21/2815 , H01L29/42376 , H01L29/7613 , H01L29/775
摘要： A dual gate field effect transistor with an ultra thin channel of substantially uniform width formed by a self-aligned process utilizing selective etching or controlled oxidation between different materials to form a vertical channel extending between source and drain regions, having a thickness in the range from 2.5 nm to 100 nm.
摘要翻译：具有基本上均匀宽度的超薄通道的双栅场效应晶体管通过自对准工艺形成，其利用不同材料之间的选择性蚀刻或受控氧化形成在源区和漏区之间延伸的垂直沟道，其厚度范围为 2.5nm至100nm。

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