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    • 9. 发明申请
    • Magentic Memory Device and Method of Magnetization Reversal of the Magnetization of at Least One Magnetic Memory Element
    • 磁性记忆装置及其磁化反转方法
    • US20080043518A1
    • 2008-02-21
    • US11813949
    • 2005-12-29
    • Hans Schumacher
    • Hans Schumacher
    • G11C11/02
    • G11C11/16Y10S977/935
    • Method of magnetization reversal of the magnetization (M) of at least one first magnetic memory element of an array of magnetic memory elements comprising the steps of: applying a first magnetic field pulse to a first set of magnetic memory elements, and applying a second magnetic field pulse to a second set of magnetic memory elements, such that during the application of the first and second magnetic field pulse the magnetization (M) of said first magnetic memory element which is to be reversed upon the field pulse decay performs approximately an odd number of a half precessional turns, wherein the magnetization (M) of at least one second magnetic memory element which is not to be reversed upon the field pulse decay performs approximately a number of full precessional turns. The underlying concept of the invention is to improve the bit addressing in an array of magnetic memory cells by reducing the ringing of the magnetization of the free layer of the magnetic cells which are not selected for reversal but which are nevertheless subject to the application of a magnetic field pulse. This can be achieved by applying a field pulse to these cells which induces approximately a full precessional turn of the magnetization of the free layer of the cells. After the full precessional turn the magnetization is oriented very near the initial orientation along the easy application of the half select field pulse is reduced.
    • 磁存储元件阵列的至少一个第一磁存储元件的磁化(M)的磁化反转方法包括以下步骤:将第一磁场脉冲施加到第一组磁存储元件,以及施加第二磁性 场脉冲到第二组磁存储元件,使得在施加第一和第二磁场脉冲期间,所述第一磁存储元件的磁场(M)在场脉冲衰减时被反转,执行大约奇数 其中在场脉冲衰减时不被反转的至少一个第二磁存储元件的磁化强度(M)执行大约一定数量的全进位匝数。 本发明的基本概念是通过减少不被选择用于反转的磁性单元的自由层的磁化的振荡来改善磁存储单元的阵列中的位寻址,但仍然需要应用 磁场脉冲。 这可以通过对这些单元施加场脉冲来实现,这些单元引起单元自由层的磁化的大致完全转动。 在完全进动转弯之后,磁化方向非常接近初始取向,沿着半选择场脉冲的容易应用减小。