专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2014207225A 反射型拡散レンズ及び照明装置审中-公开
标题翻译：反射型扩张镜和照明装置
公开(公告)号：JP2014207225A
公开(公告)日：2014-10-30
申请号：JP2014075162
申请日：2014-04-01
申请人：三星電子株式会社Samsung Electronics Co.,Ltd. , Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM CHEOUL YOUNG , LEE KEUNBUM , LEE SEUNG-JAE , KIM SUN GIL , KIM CHANGJU , LEE GEUN HO , JANG DONG-SEOB
IPC分类号： F21S2/00 , F21V5/00 , G02B3/04 , G02F1/13357
CPC分类号： F21V13/04 , F21V7/04 , G02B19/0028 , G02B19/0061 , G02F1/133603 , G02F2001/133607
摘要：【課題】既存の反射型拡散レンズより光拡散効果を改善すると共に、加工が容易な構造を有する反射型拡散レンズ、及びその反射型拡散レンズを含む照明装置を提供しようとする。【解決手段】反射型拡散レンズは、反射面の方向に凹んでおり、入射する光が反射面に入射できるように縦断面が放物線形状または正規分布形状を有する底面と、底面の方向に凹んだ反射面とを含むことができる。前記反射面は、底面から入射された光を全反射させることができるように縦断面が放物線形状または正規分布形状を有する凹面を含むことができる。照明装置は、光を放射する一つ以上の光源と、光源からの光を集光するための反射型拡散レンズと、光源の下方に位置し、反射板に到達した光線の方向または光量を調節する反射板とを含むことができる。【選択図】図1
摘要翻译：要解决的问题：提供一种反射型漫射透镜，以及包括具有能够与现有的反射型漫射透镜相比能够改善光漫射效果的结构的反射型漫射透镜的照明装置，并且易于加工。解决方案：A 反射型扩散透镜可以包括在反射面的方向上凹陷的底面，并且在垂直截面上具有抛物线形状或正态分布形状，使得入射光能够进入反射表面，并且反射表面凹入底面的方向。反射表面可以包括在垂直横截面上具有抛物线形状或正态分布形状的凹陷表面，使得从底表面进入的光可以被完全反射。照明装置可以包括一个或多个照射光的光源，用于收集来自光源的光的反射型漫射透镜，以及位于光源下方的反射板，并且调节到达反射板的光线的方向或量。

2. 发明专利

JP2014193804A Method for preparing graphene 有权
标题翻译：制备石墨的方法
公开(公告)号：JP2014193804A
公开(公告)日：2014-10-09
申请号：JP2014047211
申请日：2014-03-11
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： SON INKAKU , LEE SEUNG-JAE
IPC分类号： C01B31/02 , B82Y30/00 , B82Y40/00 , H01L21/20 , H01L21/368
CPC分类号： H01L21/02527 , B01J21/04 , B01J23/755 , B82Y30/00 , B82Y40/00 , C01B32/186 , Y10T428/2982
摘要： PROBLEM TO BE SOLVED: To provide a method of preparing graphene easily at a lower temperature and at a higher yield.SOLUTION: A method of preparing graphene includes a step of supplying a gas onto a metal catalyst, the gas including CO, CHand HO.
摘要翻译：要解决的问题：提供一种在较低温度和较高产率下容易地制备石墨烯的方法。解决方案：制备石墨烯的方法包括将气体供应到金属催化剂上的步骤，所述气体包括CO，CH和HO。

3. 发明专利

JP2010123946A Method of driving light-emitting diode and backlight assembly for performing the same 审中-公开
标题翻译：驱动发光二极管的方法和用于执行发光二极管的背光组件
公开(公告)号：JP2010123946A
公开(公告)日：2010-06-03
申请号：JP2009250940
申请日：2009-10-30
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： HONG HYUN-SEOK , LEE YO-HAN , SHIN DONG-LYOUL , LEE SEUNG-JAE
IPC分类号： H01L33/00 , F21S2/00 , F21Y101/02 , H05B37/02
CPC分类号： H05B33/0869 , G09G3/3406
摘要： PROBLEM TO BE SOLVED: To provide a method of driving a light-emitting diode and a backlight assembly for performing the same. SOLUTION: The method of driving the light-emitting diode capable of preventing from lowering brightness and the backlight assembly for performing the same are disclosed. As the method of driving the light-emitting diode, the quantities of light of red light, green light, and blue light generated from red green and blue light-emitting diodes, are sensed respectively, and then an actual ratio of quantity of light among red light, green light, and blue light is compared to a standard ratio of quantity of light. When the actual ratio of quantity of light does not coincide with the standard ratio of quantity of light, the red, green and blue light-emitting diodes are controlled respectively so that the actual ratio of quantity of light coincides with the standard ratio of quantity of light. In this way, the actual ratio of quantity of light between red light, green light, and blue light is compared to the standard ratio of quantity of light, and accordingly, it becomes possible to prevent a decrease in the brightness of light generated from the red, green and blue light-emitting diodes. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种驱动发光二极管和执行该发光二极管的背光组件的方法。解决方案：公开了驱动能够防止降低亮度的发光二极管的方法和用于执行该亮度的背光组件。作为驱动发光二极管的方法，分别检测从红色绿色和蓝色发光二极管产生的红色光，绿色光和蓝色光的光量，然后将实际的光量之比将红光，绿光和蓝光与标准的光量比进行比较。当实际的光量比与光量的标准比率不一致时，分别控制红，绿和蓝色发光二极管，使得实际的光量比与标准比例的数量一致光。以这种方式，将红光，绿光和蓝光之间的光量的实际比率与光量的标准比率进行比较，因此，可以防止由光源产生的光的亮度降低红色，绿色和蓝色发光二极管。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2009064440A Memory system for storing multi-bit data and reading method for the same 有权
标题翻译：用于存储多位数据的存储系统及其读取方法
公开(公告)号：JP2009064440A
公开(公告)日：2009-03-26
申请号：JP2008226200
申请日：2008-09-03
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE SEUNG-JAE , KANG DONG-KU , SONG SEUNG-HWAN , GONG JUN-TIN , CHAE DONG-HYUK , PARK SUNG-CHUNG
IPC分类号： G06F12/16 , G11C16/02 , G11C16/06 , G11C29/42
CPC分类号： G11C11/5642 , G11C16/3418
摘要： PROBLEM TO BE SOLVED: To provide a reading method for a memory system having memory cells for storing multi-bit data respectively. SOLUTION: Whether the state of data read from a selected memory cell is changed to a different state when an adjacent memory cell is programmed or not is discriminated on the basis of data read from adjacent memory cells of the selected memory cell, respectively, and the data read from the selected memory cell are corrected according to the discriminated result. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种具有分别用于存储多位数据的存储单元的存储器系统的读取方法。解决方案：根据从所选择的存储器单元的相邻存储单元读取的数据来判别当相邻存储器单元被编程时，从所选存储单元读取的数据的状态是否被改变为不同的状态并且根据鉴别结果校正从所选存储单元读取的数据。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2008310948A Nonvolatile memory device, memory system including it, and its programming method and reading method 有权
标题翻译：非易失性存储器件，包括其的存储器系统及其编程方法和读取方法
公开(公告)号：JP2008310948A
公开(公告)日：2008-12-25
申请号：JP2008147189
申请日：2008-06-04
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE SEUNG-JAE , CHAE DONG-HYUK , KANG DONG-KU
IPC分类号： G11C16/06 , G11C16/04
CPC分类号： G11C16/10 , G11C16/26 , G11C2216/14
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile memory device, a memory system including it, and its programming method and reading method. SOLUTION: A reading method of a nonvolatile memory device includes a step for reading an initial threshold voltage value from threshold voltage information cells that store the initial threshold voltage value of an index cell, a step for reading a current threshold voltage value from the index cell, a step for comparing the initial threshold voltage value and the current threshold voltage value to calculate a shifted threshold voltage level of the index cell, and a step for reading user data by changing reading voltage by the shifted threshold voltage level. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种非易失性存储器件，包括它的存储器系统及其编程方法和读取方法。解决方案：非易失性存储器件的读取方法包括从存储索引单元的初始阈值电压值的阈值电压信息单元读取初始阈值电压值的步骤，从索引单元，用于比较初始阈值电压值和当前阈值电压值以计算索引单元的偏移阈值电压电平的步骤，以及通过将读取电压改变移位的阈值电压电平来读取用户数据的步骤。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2008141200A Semiconductor module and its manufacturing method 审中-公开
标题翻译：半导体模块及其制造方法
公开(公告)号：JP2008141200A
公开(公告)日：2008-06-19
申请号：JP2007307874
申请日：2007-11-28
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： PARK SANGOOK , LEE SEUNG-JAE , YANG SEUNG-YEOL
IPC分类号： H05K1/18 , H01L21/60 , H05K3/34
CPC分类号： H05K3/303 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H05K1/183 , H05K2201/09036 , H05K2201/09472 , H05K2201/10734 , Y02P70/613 , H01L2224/05599
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor module and its manufacturing method.
SOLUTION: The semiconductor module includes a semiconductor package having an external connection terminal, and a printed circuit board provided with a terminal land electrically connected to the external connection terminal. The printed circuit board has a recess in which the external connection terminal is contained as exposing the terminal land thereof. The recess has a width smaller than the semiconductor package. Thus, the edge of the semiconductor package contained in the recess is contacted to the printed circuit board, so that the breakage failure of the edge of the semiconductor package is prevented.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体模块及其制造方法。解决方案：半导体模块包括具有外部连接端子的半导体封装和设置有电连接到外部连接端子的端子焊盘的印刷电路板。印刷电路板具有露出其端子台的外部连接端子的凹部。凹部的宽度比半导体封装小。因此，包含在凹部中的半导体封装的边缘与印刷电路板接触，从而防止半导体封装的边缘的断裂故障。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2013026628A Method for manufacturing semiconductor light-emitting element 审中-公开
标题翻译：制造半导体发光元件的方法
公开(公告)号：JP2013026628A
公开(公告)日：2013-02-04
申请号：JP2012164079
申请日：2012-07-24
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIN KIHAN , KYO MOTOKU , CHOI SEUNG WOO , LEE SEUNG-JAE , LEE SI HYUK , KIM TAE-HOON
IPC分类号： H01L33/20 , H01L21/205
CPC分类号： H01L33/007 , H01L33/0095 , H01L33/20
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor light-emitting element, in which light extraction efficiency is improved by a simple process.SOLUTION: A method for manufacturing a semiconductor light-emitting element includes the steps of: providing a substrate having a first principal surface and a second principal surface facing each other; forming a plurality of columnar protrusions on the first principal surface of the substrate; forming a light-emitting laminate including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer, on the first principal surface having the protrusions formed thereon; forming a plurality of light-emitting structures by removing portions formed in regions corresponding to grooves around the protrusions, of the light-emitting laminate; and dividing the substrate along the grooves so as to obtain individual elements from the plurality of light-emitting structures formed on the substrate.
摘要翻译：解决的问题：提供一种通过简单的工艺提高光提取效率的半导体发光元件的制造方法。解决方案：一种用于制造半导体发光元件的方法包括以下步骤：提供具有彼此面对的第一主表面和第二主表面的衬底; 在所述基板的所述第一主表面上形成多个柱状突起; 在其上形成有突起的第一主表面上形成包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光层压体; 通过除去形成在与发光层叠体的突起部周围的槽对应的区域中的部分来形成多个发光结构体; 并且沿着所述凹槽划分所述基板，以便从形成在所述基板上的所述多个发光结构中获得单独的元件。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2006196152A Nonvolatile semiconductor memory device with load free type wired or configuration and its driving method 有权
标题翻译：具有负载自由类型布线或配置的非易失性半导体存储器件及其驱动方法
公开(公告)号：JP2006196152A
公开(公告)日：2006-07-27
申请号：JP2006000167
申请日：2006-01-04
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： LEE SEUNG-JAE
IPC分类号： G11C16/06 , G11C16/04
CPC分类号： G11C16/3459 , G11C16/0483 , G11C16/24 , G11C16/3454
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of verifying and reading a program by a wired-OR system and having a load free type wired-OR configuration and to provide its driving method. SOLUTION: The nonvolatile semiconductor memory device is provided with an internal output line and a data line control circuit. The internal output line can be driven by each output driver of a page buffer. If either one of main latch data of the page buffer is logic "H", the internal output line is driven by ground voltage regardless of the logic states of the residual main latch data. A global output line is precharged by a data line precharge circuit. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够通过有线或无线系统验证和读取程序并具有无负载型有线配置并提供其驱动方法的非易失性半导体存储器件。解决方案：非易失性半导体存储器件设置有内部输出线和数据线控制电路。内部输出线可以由页面缓冲区的每个输出驱动器驱动。如果页面缓冲器的主锁存数据中的任何一个是逻辑“H”，则内部输出线由接地电压驱动，而与剩余主锁存器数据的逻辑状态无关。全局输出线由数据线预充电电路预充电。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2009069804A Display apparatus including wireless communication device and method of operating same 有权
标题翻译：显示装置，包括无线通信装置及其操作方法
公开(公告)号：JP2009069804A
公开(公告)日：2009-04-02
申请号：JP2008103581
申请日：2008-04-11
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KIM BUM-JIN , LEE SEUNG-JAE , PYOUN SEOUNG-BUM , PARK WOO-IL , KIM DAE-SEOP
IPC分类号： G09G3/20
CPC分类号： G09G5/18 , G06F3/147 , G09G3/20 , G09G2310/08 , G09G2330/06 , G09G2370/047 , G09G2370/16 , H04B15/02 , H04B2215/065
摘要： PROBLEM TO BE SOLVED: To provide a display apparatus including a wireless communication device having an improved reception rate, and a method of operating the same. SOLUTION: The display apparatus including the wireless communication device includes: a display unit that receives a main clock and is operated by an operating frequency in response to the frequency of the main clock; and a main-clock-providing unit that measures noise in signals received from a wireless communication channel and changes the frequency of the main clock to reduce the noise when providing the main clock. COPYRIGHT: (C)2009,JPO&INPIT

10. 发明专利

JP2009016034A Flash memory system and its error correction method 有权
标题翻译：闪存存储器系统及其错误校正方法
公开(公告)号：JP2009016034A
公开(公告)日：2009-01-22
申请号：JP2008178064
申请日：2008-07-08
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： KANG DONG-KU , LEE SEUNG-JAE , KONG JUN-JIN
IPC分类号： G11C16/06 , G06F12/16 , G11C16/02 , G11C16/04
CPC分类号： G11C11/5642 , G06F11/1068 , G11C16/0483 , G11C16/26 , G11C16/3418 , G11C2029/0411
摘要： PROBLEM TO BE SOLVED: To provide a flash memory system, and more specifically, to provide a flash memory system and its error correction method. SOLUTION: The flash memory system includes: a multi-bit flash memory device that includes a memory cell array including memory cells disposed in rows and columns, a readout circuit for reading data from the memory cell array, and a control logic element, when a readout operation on the top data stored in a selected memory cell is requested, for controlling the readout circuit to read data sequentially from the selected memory cell and a memory cell adjacent to the selected memory cell; and a flash memory controller that compares the data read from the memory cell adjacent to the selected memory cell, which is provided from the multi-bit flash memory device, and corrects the data read from the selected memory cell based on the correction result. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种闪存系统，更具体地，提供一种闪存系统及其纠错方法。闪速存储器系统包括：多位闪存器件，其包括存储单元阵列，该存储单元阵列包括以列和列布置的存储单元，用于从存储单元阵列读取数据的读出电路和控制逻辑元件当请求存储在所选择的存储单元中的顶部数据的读出操作时，用于控制读出电路从所选择的存储单元和与所选存储单元相邻的存储单元顺序读取数据; 以及闪速存储器控制器，其比较从与多位闪存器件提供的所选存储单元相邻的存储单元读取的数据，并且基于校正结果校正从所选存储单元读取的数据。版权所有（C）2009，JPO＆INPIT

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式