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1. 发明专利

JP2006086527A Image sensor and method of forming it 有权
标题翻译：图像传感器及其形成方法
公开(公告)号：JP2006086527A
公开(公告)日：2006-03-30
申请号：JP2005262836
申请日：2005-09-09
申请人： Samsung Electronics Co Ltd , 三星電子株式会社Samsung Electronics Co.,Ltd.
发明人： YI DUK-MIN , WON SUNG-KEUN , RYU JUNRETSU
IPC分类号： H01L27/146
CPC分类号： H01L27/14687 , H01L27/14609 , H01L27/14689
摘要： PROBLEM TO BE SOLVED: To provide an image sensor which includes a photo-sensitive device and at least one transistor electrically connected to the photo-sensitive device for outputting charges stored in the photo-sensitive device.
SOLUTION: The image sensor includes a photo-sensitive device and at least a transistor for outputting charges generated in the photo-sensitive device. The transistor connected to the photo-sensitive device includes a stacked gate pattern consisting of a gate electrode to which a bias voltage is applied and an ion-implantation interrupting pattern arranged on the gate electrode. A well region of the photo-sensitive device is formed self-aligned with the gate electrode of the transistor connected to the photo-sensitive device by the ion-implantation interrupting pattern in the ion-implantation process for forming the well region.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种图像传感器，其包括光敏器件和电连接到光敏器件的至少一个晶体管，用于输出光敏器件中存储的电荷。解决方案：图像传感器包括光敏装置和至少一个用于输出在感光装置中产生的电荷的晶体管。连接到感光装置的晶体管包括由施加偏置电压的栅电极和布置在栅电极上的离子注入断线图案组成的堆叠栅极图案。在用于形成阱区域的离子注入工艺中，通过离子注入断开模式，光敏器件的阱区域与连接到光敏器件的晶体管的栅电极自对准。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2004104125A Manufacturing method of nonvolatile memory device 审中-公开
公开(公告)号：JP2004104125A
公开(公告)日：2004-04-02
申请号：JP2003309291
申请日：2003-09-01
申请人： Samsung Electronics Co Ltd , 三星電子株式会社
发明人： LEE CHANYUPU , CHO JINSHU , YU JAE-MIN , KIM HEIKYU , RYU JUNRETSU
IPC分类号： G11C7/00 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , H01L27/115
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a split-gate nonvolatile memory device.
SOLUTION: This manufacturing method includes the following process: a lower conducting film is formed on a semiconductor substrate, and a lower sacrificial film pattern and an upper sacrificial film pattern, which are laminated, is sequentially formed on the lower conducting film; then a mask spacer is formed on the sidewalls of the sacrificial film patterns. The upper and lower sacrificial film patterns have an opening, to expose the lower conducting film. The upper sacrificial film pattern is preferably made of silicon oxide film or another material, having etching selectivity with respect to the lower sacrificial film pattern. When forming the upper sacrificial film pattern, it is preferable that the low-temperature chemical vapor deposition method be used. As a result, the height of the mask spacer can be increased without thermal budget, which prevents short circuits between a word line and a source line.
COPYRIGHT: (C)2004,JPO

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