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    • 7. 发明授权
    • Scan driver for a display device
    • US11282463B2
    • 2022-03-22
    • US16744009
    • 2020-01-15
    • Samsung Display Co., Ltd.
    • Jong Hee KimSoo Yeon Lee
    • G09G3/32G09G3/3266G09G3/36
    • A scan driver for a display device includes a plurality of scan stage groups, each of the scan stage groups including a first scan stage and a second scan stage. The first scan stage includes: a first transistor including a gate electrode coupled to a first Q node, one electrode coupled to a first scan clock line, and another electrode coupled to a first scan line; a second transistor including a gate electrode and one electrode, which are coupled to a first scan carry line, and another electrode coupled to the first Q node; a third transistor including a gate electrode coupled to a first control line and one electrode coupled to a first sensing carry line; a fourth transistor including a gate electrode coupled to the other electrode of the third transistor, one electrode coupled to a second control line, and another electrode coupled to a first node; a first capacitor including one electrode coupled to the one electrode of the fourth transistor and another electrode coupled to the gate electrode of the fourth transistor; a fifth transistor including a gate electrode coupled to a third control line, one electrode coupled to the first node, and another electrode coupled to the first Q node; and a sixth transistor including a gate electrode coupled to the first Q node, one electrode coupled to the second control line, and another electrode coupled to the first node.
    • 8. 发明授权
    • Scan driver for a display device with reduced degradation of transistors
    • US11823626B2
    • 2023-11-21
    • US17699943
    • 2022-03-21
    • Samsung Display Co., Ltd.
    • Jong Hee KimSoo Yeon Lee
    • G09G3/32G09G3/3266G09G3/36
    • G09G3/3266G09G3/3677G09G2310/08
    • A scan driver for a display device includes a plurality of scan stage groups, each of the scan stage groups including a first scan stage and a second scan stage. The first scan stage includes: a first transistor including a gate electrode coupled to a first Q node, one electrode coupled to a first scan clock line, and another electrode coupled to a first scan line; a second transistor including a gate electrode and one electrode, which are coupled to a first scan carry line, and another electrode coupled to the first Q node; a third transistor including a gate electrode coupled to a first control line and one electrode coupled to a first sensing carry line; a fourth transistor including a gate electrode coupled to the other electrode of the third transistor, one electrode coupled to a second control line, and another electrode coupled to a first node; a first capacitor including one electrode coupled to the one electrode of the fourth transistor and another electrode coupled to the gate electrode of the fourth transistor; a fifth transistor including a gate electrode coupled to a third control line, one electrode coupled to the first node, and another electrode coupled to the first Q node; and a sixth transistor including a gate electrode coupled to the first Q node, one electrode coupled to the second control line, and another electrode coupled to the first node.
    • 10. 发明授权
    • Scan driver for a display device with reduced degradation of transistors
    • US11776482B2
    • 2023-10-03
    • US17699943
    • 2022-03-21
    • Samsung Display Co., Ltd.
    • Jong Hee KimSoo Yeon Lee
    • G09G3/32G09G3/3266G09G3/36
    • G09G3/3266G09G3/3677G09G2310/08
    • A scan driver for a display device includes a plurality of scan stage groups, each of the scan stage groups including a first scan stage and a second scan stage. The first scan stage includes: a first transistor including a gate electrode coupled to a first Q node, one electrode coupled to a first scan clock line, and another electrode coupled to a first scan line; a second transistor including a gate electrode and one electrode, which are coupled to a first scan carry line, and another electrode coupled to the first Q node; a third transistor including a gate electrode coupled to a first control line and one electrode coupled to a first sensing carry line; a fourth transistor including a gate electrode coupled to the other electrode of the third transistor, one electrode coupled to a second control line, and another electrode coupled to a first node; a first capacitor including one electrode coupled to the one electrode of the fourth transistor and another electrode coupled to the gate electrode of the fourth transistor; a fifth transistor including a gate electrode coupled to a third control line, one electrode coupled to the first node, and another electrode coupled to the first Q node; and a sixth transistor including a gate electrode coupled to the first Q node, one electrode coupled to the second control line, and another electrode coupled to the first node.