专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20150259598A1 ETCHANT COMPOSITION AND METHOD OF FORMING METAL WIRE AND THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME 审中-公开
标题翻译：使用其形成金属线和薄膜晶体管阵列的蚀刻组合物和方法
公开(公告)号：US20150259598A1
公开(公告)日：2015-09-17
申请号：US14725849
申请日：2015-05-29
申请人： Samsung Display Co., Ltd. , DONGWOO FINE-CHEM CO., LTD.
发明人： In-Bae KIM , Jong-Hyun CHOUNG , Seon-Il KIM , Hong-Sick PARK , Wang Woo LEE , Jae-Woo JEONG , In Seol KUK , Sang-Tae KIM , Young-Chul PARK , Keyong Bo SHIM , In-Ho YU , Young-Jin YOON , Suck-Jun LEE , Joon-Woo LEE , Sang-Hoon JANG , Young-Jun JIN
IPC分类号： C09K13/08 , H01L21/32 , H01L21/3213 , H01L27/12
CPC分类号： C22F1/18 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28008 , H01L21/32 , H01L21/32134 , H01L27/124 , H01L27/1288 , H05K3/067
摘要： A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.
摘要翻译：一种蚀刻剂组合物，其包含基于蚀刻剂组合物的总重量为约0.5重量％至约20重量％的过硫酸盐，约0.5重量％至约0.9重量％的氟化铵，约1重量％至约10重量％无机酸的重量百分比，约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约10.0重量％的磺酸，约5重量％至约10重量％的有机酸，或其盐，剩余的水。蚀刻剂组合物可以被配置为蚀刻包括铜和钛的金属层，以形成可以包括在显示装置的薄膜晶体管阵列面板中的金属线。

2. 发明申请

US20140024206A1 ETCHANT COMPOSITION AND METHOD OF FORMING METAL WIRE AND THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME 有权
标题翻译：使用其形成金属线和薄膜晶体管阵列的蚀刻组合物和方法
公开(公告)号：US20140024206A1
公开(公告)日：2014-01-23
申请号：US13718557
申请日：2012-12-18
申请人： SAMSUNG DISPLAY CO., LTD. , DONGWOO FINE-CHEM CO., LTD.
发明人： In-Bae KIM , Jong-Hyun CHOUNG , Seon-Il KIM , Hong-Sick PARK , Wang Woo LEE , Jae-Woo JEONG , In Seol KUK , Sang-Tae KIM , Young-Chul PARK , Keyong Bo SHIM , In-Ho YU , Young-Jin YOON , Suck-Jun LEE , Joon-Woo LEE , Sang-Hoon JANG , Young-Jun JIN
IPC分类号： C23F1/18 , H01L21/28
CPC分类号： C22F1/18 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28008 , H01L21/32 , H01L21/32134 , H01L27/124 , H01L27/1288 , H05K3/067
摘要： A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.
摘要翻译：一种蚀刻剂组合物，其包含基于蚀刻剂组合物的总重量为约0.5重量％至约20重量％的过硫酸盐，约0.5重量％至约0.9重量％的氟化铵，约1重量％至约10重量％无机酸的重量百分比，约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约10.0重量％的磺酸，约5重量％至约10重量％的有机酸或其盐，剩余的水。蚀刻剂组合物可以被配置为蚀刻包括铜和钛的金属层，以形成可以包括在显示装置的薄膜晶体管阵列面板中的金属线。

3. 发明申请

US20220229322A1 DISPLAY DEVICE, METHOD FOR FORMING A PATTERN AND METHOD FOR MANUFACTURING DISPLAY DEVICE 有权
公开(公告)号：US20220229322A1
公开(公告)日：2022-07-21
申请号：US17713715
申请日：2022-04-05
申请人： Samsung Display Co., LTD.
发明人： Seon-Il KIM , Sung Won CHO , Sang Gab KIM , Su Bin BAE , Yu-Gwang JEONG , Dae Won CHOI
IPC分类号： G02F1/1368 , G02F1/1362 , H01L51/56 , H01L51/52 , H01L27/32
摘要： A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70° to about 90°. A thickness of the capping layer is in a range of about 100 Å to about 300 Å, and a thickness of the main conductive layer is in a range of about 1,000 Å to about 20,000 Å.

4. 发明申请

US20180101057A1 DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180101057A1
公开(公告)日：2018-04-12
申请号：US15698988
申请日：2017-09-08
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Seon-Il KIM , Sungwon CHO , Ji Hun KIM , Yunjong YEO , Sanggab KIM
IPC分类号： G02F1/1335
CPC分类号： G02F1/133528 , G02F1/133514 , G02F2001/133548
摘要： A display apparatus includes a wire grid pattern layer and a capping layer. The wire grid pattern layer includes protrusions having the same shape and spaced at uniform intervals to form a wire grid. The capping layer is on the wire grid pattern layer. The protrusions include metal, and the capping layer includes metal oxide which is an oxide of the metal.

5. 发明申请

US20140011352A1 METAL WIRE ETCHANT AND METHOD OF FORMING METAL WIRE USING THE SAME 有权
标题翻译：金属线材和使用该金属线形成金属线的方法
公开(公告)号：US20140011352A1
公开(公告)日：2014-01-09
申请号：US13728463
申请日：2012-12-27
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Jong-Hyun CHOUNG , In-Bae KIM , Seon-Il KIM , Hong Sick PARK , Jae Woo JEONG , Gyu-Po KIM , Won-Guk SEO , Hyun-Cheol SHIN , Ki-Beom LEE , Sam-Young CHO , Seung-Yeon HAN
IPC分类号： C23F1/18 , H01L21/48
CPC分类号： C23F1/18 , C23F1/26 , H01L21/4814
摘要： A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.
摘要翻译：包括过硫酸盐，磺酸盐，氟化合物，唑类化合物，有机酸，硝酸盐和氯化合物的金属线蚀刻剂及其制备方法。

6. 发明申请

US20220415932A1 DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME 有权
公开(公告)号：US20220415932A1
公开(公告)日：2022-12-29
申请号：US17822751
申请日：2022-08-26
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Sungwon CHO , Yu-Gwang JEONG , Daewon CHOI , Seon-Il KIM , Subin BAE , Yun Jong YEO
IPC分类号： H01L27/12 , H01L29/786
摘要： A display substrate includes a substrate, a first gate electrode on the substrate, a first gate insulating layer on the first gate electrode, an active layer on the first gate insulating layer, a second gate insulating layer on the active layer, a second gate electrode on the second gate insulating layer, an interlayer insulating layer on the second gate electrode, a first electrode on the interlayer insulating layer to contact a top surface, a side wall, and a bottom surface of the active layer via a first contact hole through the interlayer insulating layer, the second gate insulating layer, the active layer, and a portion of the first gate insulating layer, and a second electrode on the interlayer insulating layer to contact the first gate electrode via a second contact hole through the interlayer insulating layer, the second gate insulating layer, and the first gate insulating layer.

7. 发明申请

US20210132424A1 DISPLAY DEVICE, METHOD FOR FORMING A PATTERN AND METHOD FOR MANUFACTURING DISPLAY DEVICE 有权
公开(公告)号：US20210132424A1
公开(公告)日：2021-05-06
申请号：US16905306
申请日：2020-06-18
申请人： Samsung Display Co., LTD.
发明人： Seon-Il KIM , Sung Won CHO , Sang Gab KIM , Su Bin BAE , Yu-Gwang JEONG , Dae Won CHOI
IPC分类号： G02F1/1368 , G02F1/1362 , H01L51/56 , H01L27/32 , H01L51/52
摘要： A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70° to about 90°. A thickness of the capping layer is in a range of about 100 Å to about 300 Å, and a thickness of the main conductive layer is in a range of about 1,000 Å to about 20,000 Å.

8. 发明申请

US20150049282A1 LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：液晶显示器及其制造方法
公开(公告)号：US20150049282A1
公开(公告)日：2015-02-19
申请号：US14147150
申请日：2014-01-03
申请人： Samsung Display Co., Ltd.
发明人： Yeun Tae KIM , Koichi SUGITANI , Jung Wook LEE , Hoon KANG , Min Su KIM , Seon-Il KIM , Hee-Keun LEE
IPC分类号： G02F1/1333 , G02F1/1335 , G02F1/1362
CPC分类号： G02F1/133377 , G02F1/133512 , G02F1/1341 , G02F1/136227
摘要： A liquid crystal display device includes: a substrate; a thin film transistor disposed on the substrate; a pixel electrode connected with the thin film transistor; and a roof layer disposed to face the pixel electrode, wherein a plurality of microcavities having respective liquid crystal injection holes are formed between the pixel electrode and the roof layer, and the microcavities are filled with electrically orientatable liquid crystal molecules, wherein a light blocking layer disposed adjacent to the injection holes is formed and covering the thin film transistor, wherein the light blocking layer is covered by a passivation layer.
摘要翻译：液晶显示装置包括：基板; 设置在所述基板上的薄膜晶体管; 与薄膜晶体管连接的像素电极; 以及与所述像素电极相对配置的屋顶层，其中，在所述像素电极和所述屋顶层之间形成具有各自的液晶注入孔的多个微腔，并且所述微腔填充有可电取向的液晶分子，其中，遮光层形成并邻近喷射孔设置并覆盖薄膜晶体管，其中遮光层被钝化层覆盖。

9. 发明申请

US20210111198A1 DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THE SAME 有权
公开(公告)号：US20210111198A1
公开(公告)日：2021-04-15
申请号：US16896146
申请日：2020-06-08
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Sungwon CHO , Yu-Gwang JEONG , Daewon CHOI , Seon-Il KIM , Subin BAE , Yun Jong YEO
IPC分类号： H01L27/12 , H01L29/786
摘要： A display substrate includes a substrate, a first gate electrode on the substrate, a first gate insulating layer on the first gate electrode, an active layer on the first gate insulating layer, a second gate insulating layer on the active layer, a second gate electrode on the second gate insulating layer, an interlayer insulating layer on the second gate electrode, a first electrode on the interlayer insulating layer to contact a top surface, a side wall, and a bottom surface of the active layer via a first contact hole through the interlayer insulating layer, the second gate insulating layer, the active layer, and a portion of the first gate insulating layer, and a second electrode on the interlayer insulating layer to contact the first gate electrode via a second contact hole through the interlayer insulating layer, the second gate insulating layer, and the first gate insulating layer.

10. 发明申请

US20140204300A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20140204300A1
公开(公告)日：2014-07-24
申请号：US13961793
申请日：2013-08-07
申请人： Samsung Display Co., Ltd.
发明人： Hong Sick PARK , Seon-Il KIM , Min Ho MOON , Hyang-Shik KONG , Yeun Tae KIM , Chang Oh JEONG
IPC分类号： G02F1/1362
CPC分类号： G02F1/13458 , G02F1/133305 , G02F1/133377 , G02F1/1341 , G02F1/136286 , G02F1/1368
摘要： The present invention relates to a display device and a manufacturing method thereof, wherein a spoilage layer generated in a manufacturing process is removed, and a manufacturing method of a display device according to an exemplary embodiment of the present invention includes: forming a thin film transistor on a substrate including a plurality of pixel areas; forming a pixel electrode connected to the thin film transistor in the pixel area; forming a sacrificial layer on the pixel electrode; forming a barrier layer on the sacrificial layer; forming a common electrode on the barrier layer; forming a roof layer on the common electrode; patterning the barrier layer, the common electrode, and the roof layer to exposed a portion of the sacrificial layer thereby forming an injection hole; removing the sacrificial layer to form a microcavity for a plurality of pixel areas; removing the barrier layer.
摘要翻译：本发明涉及一种显示装置及其制造方法，其中在制造过程中产生的腐败层被去除，并且根据本发明的示例性实施例的显示装置的制造方法包括：形成薄膜晶体管在包括多个像素区域的基板上; 在所述像素区域中形成连接到所述薄膜晶体管的像素电极; 在像素电极上形成牺牲层; 在牺牲层上形成阻挡层; 在阻挡层上形成公共电极; 在公共电极上形成屋顶层; 图案化阻挡层，公共电极和屋顶层，以暴露部分牺牲层，从而形成注入孔; 去除所述牺牲层以形成用于多个像素区域的微腔; 去除阻挡层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式