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1. 发明申请

US20150268914A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20150268914A1
公开(公告)日：2015-09-24
申请号：US14476965
申请日：2014-09-04
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Tae-Woong KIM , Young-Gug SEOL , Ki-Yong LEE , Sang-Wol LEE
IPC分类号： G06F3/14 , G06F1/16
CPC分类号： G06F3/1423 , G06F1/1647 , G06F1/1652 , G09G2380/02
摘要： A display device includes a first display, an accommodation unit on a side of the first display, and a second display. The second display is rollably accommodated in the accommodation unit in a rolled state.
摘要翻译：显示装置包括第一显示器，位于第一显示器一侧的调节单元和第二显示器。第二显示器以滚动状态可滚动地容纳在收纳单元中。

2. 发明申请

US20150234431A1 DISPLAY MODULE INCLUDING FLEXIBLE PANEL 有权
标题翻译：显示模块，包括柔性面板
公开(公告)号：US20150234431A1
公开(公告)日：2015-08-20
申请号：US14305613
申请日：2014-06-16
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Tae-Hyeog JUNG , Tae-Hoon YANG , Ki-Yong LEE , Sang-Wol LEE
IPC分类号： G06F1/16
CPC分类号： G06F1/1652 , G02F1/133305 , G02F2001/133314 , G06F1/1601 , G06F1/1613 , G06F1/1643 , G09G5/00
摘要： A display module may include a flexible panel that is bent in a direction such that a compressive stress is exerted on a display unit within a housing.
摘要翻译：显示模块可以包括柔性面板，该柔性面板沿着使得压缩应力施加在壳体内的显示单元上的方向弯曲。

3. 发明申请

US20150072454A1 METHOD FOR MANUFACTURING DISPLAY PANEL 审中-公开
标题翻译：制造显示面板的方法
公开(公告)号：US20150072454A1
公开(公告)日：2015-03-12
申请号：US14297169
申请日：2014-06-05
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Tae Woong KIM , Hyung Sik KIM , Hyun Woo KOO , Woo Jeong JANG , Ki-Yong LEE
IPC分类号： H01L51/56
CPC分类号： H01L51/003 , H01L27/1266 , H01L51/0096 , H01L2251/566 , Y02E10/549 , Y02P70/521
摘要： A method of manufacturing a display panel is provided. A release layer is formed on a support substrate. A thin film substrate is formed on the release layer and the support substrate. A pixel and an encapsulation member are formed on a part of the thin film substrate. The part of the thin film substrate is overlapped with the release layer. The part of the thin film substrate is separated from the support substrate. The release layer includes siloxane and polyimide silane.
摘要翻译：提供一种制造显示面板的方法。剥离层形成在支撑基板上。在剥离层和支撑基板上形成薄膜基板。在薄膜基板的一部分上形成像素和封装构件。薄膜基板的一部分与剥离层重叠。薄膜基板的一部分与支撑基板分离。剥离层包括硅氧烷和聚酰亚胺硅烷。

4. 发明申请

US20150001523A1 THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DEVICE INCLUDING POLYCRYSTALLINE SILICON LAYER 审中-公开
标题翻译：薄膜晶体管和有机发光器件，包括多晶硅层
公开(公告)号：US20150001523A1
公开(公告)日：2015-01-01
申请号：US14490725
申请日：2014-09-19
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Byoung-Keon PARK , Jong-Ryuk PARK , Yun-Mo CHUNG , Tak-Young LEE , Jin-Wook SEO , Ki-Yong LEE , Min-Jae JEONG , Yong-Duck SON , Byung-Soo SO , Seung-Kyu PARK , Dong-Hyun LEE , Kil-Won LEE , Jae-Wan Jung
IPC分类号： H01L27/32 , H01L29/10 , H01L29/786
CPC分类号： H01L27/3244 , H01L21/0245 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L27/1277 , H01L27/3262 , H01L29/1033 , H01L29/66765 , H01L29/78609 , H01L29/78675 , H01L29/78678
摘要： A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.
摘要翻译：形成多晶硅层的方法包括：形成第一非晶硅层并形成第二非晶硅层，使得第一非晶硅层和第二非晶硅层彼此具有不同的膜质量，并使第一非晶硅层以及使用金属催化剂形成第一多晶硅层和第二多晶硅层的第二非晶硅层。薄膜晶体管包括通过该方法形成的多晶硅层和包括薄膜晶体管的有机发光器件。

5. 发明申请

US20130113765A1 FLAT PANEL DISPLAY 有权
标题翻译：平板显示
公开(公告)号：US20130113765A1
公开(公告)日：2013-05-09
申请号：US13727201
申请日：2012-12-26
申请人： Samsung Display Co., Ltd.
发明人： Jae-Bon KOO , Ji-Yong PARK , Sang-II PARK , Ki-Yong LEE , Ul-Ho LEE
IPC分类号： G09G3/32
CPC分类号： G09G3/3275 , H01L27/1214 , H01L29/78621 , H01L29/78624 , H01L29/78645 , H01L29/78672 , H01L29/78696
摘要： A high-speed flat panel display has thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, which have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One thin film transistor has a zigzag shape in its gate region or drain region or has an offset region.
摘要翻译：高速平板显示器在其中排列有多个像素的像素阵列部分中具有薄膜晶体管，以及用于驱动像素阵列部分的像素的驱动电路部分，其具有彼此不同的电阻值或具有不同的像素阵列部分几何结构比彼此。平板显示器包括其中布置有多个像素的像素阵列部分和用于驱动像素阵列部分的像素的驱动电路部分。像素阵列部分和驱动电路部分中的薄膜晶体管在其栅极区域或漏极区域中具有彼此不同的电阻值，或者具有彼此不同的几何结构。一个薄膜晶体管在其栅极区域或漏极区域中具有锯齿形状或具有偏移区域。

6. 发明申请

US20160048169A1 DISPLAY DEVICE HAVING A FLEXIBLE DISPLAY PANEL 审中-公开
标题翻译：具有柔性显示面板的显示设备
公开(公告)号：US20160048169A1
公开(公告)日：2016-02-18
申请号：US14693367
申请日：2015-04-22
申请人： Samsung Display Co., Ltd.
发明人： Tae-Hoon YANG , So-Youn JUNG , Jae-Wan JUNG , Ki-Yong LEE , Sang-Wol LEE
IPC分类号： G06F1/16
CPC分类号： G06F1/1652 , G02F1/133305 , H04M1/0268
摘要： A display device includes a display panel having a bendable part and flat parts, at least one flat part disposed at each side of the bendable part; and a panel guide attached to surfaces of the flat parts of the display panel, in which the display panel is attached to the panel guide when the bendable part is in a state of being tensioned at a reference strain included in an elastic range.
摘要翻译：显示装置包括具有可弯曲部分和平坦部分的显示面板，设置在可弯曲部分的每一侧的至少一个平坦部分; 以及附接到显示面板的平坦部分的表面的面板引导件，其中当弯曲部分处于包括在弹性范围内的参考应变时被张紧的状态时，显示面板附接到面板引导件。

7. 发明申请

US20130228760A1 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US20130228760A1
公开(公告)日：2013-09-05
申请号：US13841121
申请日：2013-03-15
申请人： SAMSUNG DISPLAY CO., LTD.
发明人： Byoung-Keon PARK , Tae-Hoon YANG , Jin-Wook SEO , Soo-Beom JO , Dong-Hyun LEE , Kil-Won LEE , Maxim LISACHENKO , Yun-Mo CHUNG , Bo-Kyung CHOI , Jong-Ryuk PARK , Ki-Yong LEE
IPC分类号： H01L51/52
CPC分类号： H01L51/52 , H01L27/3265 , H01L2227/323
摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.
摘要翻译：提供了一种有机发光二极管（OLED）显示装置及其制造方法。 OLED显示装置包括具有薄膜晶体管区域和电容器区域的基板，设置在基板上的缓冲层，设置在基板上的栅极绝缘层，设置在电容器区域的栅极绝缘层上的下部电容电极，设置在所述基板上的层间绝缘层，以及设置在所述层间绝缘层上并面向所述下部电容电极的上部电容电极，其中，所述缓冲层，所述栅极绝缘层，所述层间绝缘层，所述下部电容电极并且上部电容器电极具有形成具有与半导体层的晶界相同形状的突起的表面。所得的电容器具有增加的表面积，因此增加电容。

8. 发明申请

US20150255282A1 METHOD OF FABRICATING POLYSILICON LAYER, THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：制造多晶硅层，薄膜晶体管，包括其的有机发光二极管显示装置的方法及其制造方法
公开(公告)号：US20150255282A1
公开(公告)日：2015-09-10
申请号：US14721621
申请日：2015-05-26
申请人： Samsung Display Co., Ltd.
发明人： Dong-Hyun LEE , Ki-Yong LEE , Jin-Wook SEO , Tae-Hoon YANG , Yun-Mo CHUNG , Byoung-Keon PARK , Kil-Won LEE , Jong-Ryuk PARK , Bo-Kyung CHOI , Byung-Soo SO
IPC分类号： H01L21/02 , H01L29/66 , H01L27/32 , H01L21/477
CPC分类号： H01L21/02672 , H01L21/0206 , H01L21/02488 , H01L21/02491 , H01L21/02532 , H01L21/477 , H01L27/1277 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L29/78675
摘要： A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.
摘要翻译：制造多晶硅层的方法包括在基板上形成缓冲层，在缓冲层上形成金属催化剂层，将金属催化剂向金属催化剂层扩散至缓冲层，除去金属催化剂层，形成非晶硅层，并且使基板退火以将非晶硅层结晶成多晶硅层。薄膜晶体管包括基板，设置在基板上的缓冲层，设置在缓冲层上的半导体层，设置在基板上方和半导体层上的栅极绝缘层，设置在栅极绝缘层上的栅电极，源极电极和漏电极，两者电连接到半导体层，以及设置在缓冲层和半导体层之间的金属硅化物。

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