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1. 发明申请

US20110303292A1 LIGHT-ABSORBING MATERIAL AND PHOTOELECTRIC CONVERSION ELEMENT USING THE SAME 审中-公开
标题翻译：光吸收材料和光电转换元件使用相同
公开(公告)号：US20110303292A1
公开(公告)日：2011-12-15
申请号：US13202464
申请日：2010-02-18
申请人： Saki Sonoda , Masahiro Yoshimoto
发明人： Saki Sonoda , Masahiro Yoshimoto
IPC分类号： H01L31/0304 , H01B1/02
CPC分类号： H01L31/03044 , H01L21/0237 , H01L21/02521 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02631 , H01L31/03042 , H01L31/03048 , H01L31/0735 , H01L31/075 , H01L31/1848 , Y02E10/544 , Y02E10/548
摘要： There is provided a new light-absorbing material and a photoelectric conversion element using the same, which are capable of improving conversion efficiency of a solar cell. The light-absorbing material in the present invention is made up of a GaN-based compound semiconductor with part of Ga replaced by a 3d transition metal, and has one or more impurity bands, and whose light absorption coefficient over an overall wavelength region of not longer than 1500 nm and not shorter than 300 nm is not lower than 1000 cm−1.
摘要翻译：提供了能够提高太阳能电池的转换效率的新的光吸收材料和使用该光吸收材料的光电转换元件。本发明中的光吸收材料由具有部分Ga被3d过渡金属取代的GaN系化合物半导体构成，具有一个以上的杂质带，并且其整个波长区域的光吸收系数为长于1500nm且不小于300nm不低于1000cm -1。

2. 发明申请

US20130008508A1 LIGHT ABSORBING MATERIAL AND PHOTOELECTRIC CONVERSION ELEMENT 审中-公开
标题翻译：光吸收材料和光电转换元件
公开(公告)号：US20130008508A1
公开(公告)日：2013-01-10
申请号：US13635647
申请日：2011-03-16
申请人： Saki Sonoda , Junichi Kato , Osamu Kawasaki , Mutsuo Takenaga
发明人： Saki Sonoda , Junichi Kato , Osamu Kawasaki , Mutsuo Takenaga
IPC分类号： H01L31/0304
CPC分类号： H01L31/03044 , H01L31/1035 , H01L31/1848 , H01L31/1852 , Y02E10/544
摘要： A new light-absorbing material which can increase the conversion efficiency of a solar cell and a photoelectric conversion element using same are provided. The light-absorbing material of the present invention comprises a nitride-based compound semiconductor obtained by replacement of part of Al and/or Ga in a compound semiconductor expressed by a general formula Al1−yGayN (0≦y≦1) by at least one kind of 3d-transition metals, the nitride-based compound semiconductor having one or more impurity bands between a valence band and a conduction band, and whose light absorption coefficient over an overall wavelength region of not longer than 1500 nm and not shorter than 300 being not lower than 1000 cm−1.
摘要翻译：提供了可以提高太阳能电池的转换效率和使用其的光电转换元件的新的光吸收材料。本发明的光吸收材料包括通过将由通式Al1-yGayN（0＆nlE; y＆nlE; 1）表示的化合物半导体中的Al和/或Ga的一部分置换至少一种而获得的氮化物系化合物半导体一种3d-过渡金属，在价带和导带之间具有一个或多个杂质带的氮化物基化合物半导体，并且在不超过1500nm且不小于300的总波长区域上的光吸收系数为不低于1000厘米-1。

3. 发明申请

US20130105306A1 PHOTOCATALYST MATERIAL AND PHOTOCATALYST DEVICE 审中-公开
标题翻译：光电材料和光电子器件
公开(公告)号：US20130105306A1
公开(公告)日：2013-05-02
申请号：US13806950
申请日：2011-06-24
申请人： Saki Sonoda , Osamu Kawasaki , Junichi Kato , Mutsuo Takenaga
发明人： Saki Sonoda , Osamu Kawasaki , Junichi Kato , Mutsuo Takenaga
IPC分类号： C25B11/04
CPC分类号： H01G9/205 , B01J27/24 , B01J35/004 , C01B3/042 , C01B13/0207 , C25B1/003 , C25B1/04 , C25B11/0478 , Y02E60/364 , Y02E60/368 , Y02E70/10
摘要： A photocatalyst material and a photocatalyst device capable of generating hydrogen from water by radiation of sunlight at high efficiency. The photocatalyst material according to the present invention includes a nitride-based compound semiconductor obtained by replacement of part of Ga and/or Al by a 3d-transition metal. The nitride-based compound semiconductor has one or more impurity bands. A light absorption coefficient of the nitride-based compound semiconductor is 1,000 cm−1 or more in an entire wavelength region of 1,500 nm or less and 300 nm or more. Further, the photocatalyst material satisfies the following conditions: the energy level of the bottom of the conduction band is more negative than the redox potential of H+/H2; the energy level of the top of the valence band is more positive than the redox potential of O2/H2O; and there is no or little degradation of a material even when the material is irradiated with light underwater.
摘要翻译：一种光催化剂材料和能够以高效率的阳光照射从水中产生氢的光催化剂装置。根据本发明的光催化剂材料包括通过用3d-过渡金属置换部分Ga和/或Al而获得的氮化物基化合物半导体。氮化物系化合物半导体具有一个以上的杂质带。氮化物系化合物半导体的光吸收系数在1500nm以下且300nm以上的整个波长范围内为1000cm -1以上。此外，光催化剂材料满足以下条件：导带底部的能级比H + / H2的氧化还原电位更负; 价带顶部的能级比O2 / H2O的氧化还原电位更正; 即使当材料在水下被照射时，材料也没有或几乎没有劣化。

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