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    • 3. 发明授权
    • Method of preparing whiskers of silicon carbide and other materials
    • 制备碳化硅等材料的方法
    • US4915924A
    • 1990-04-10
    • US230747
    • 1988-08-10
    • Sadashiv K. NadkarniMukesh K. Jain
    • Sadashiv K. NadkarniMukesh K. Jain
    • C30B29/62C30B25/00
    • C30B25/005C30B29/36C30B29/38
    • A method of producing whiskers of silicon carbide and other materials. For the formation of silicon carbide, the method involves forming a first reaction zone containing microfine particles of silicon dioxide uniformly mixed with carbon or a carbon precursor, with the ratio of the silicon dioxide to the carbon present as a starting material or derivable from the precursor being greater than about 5 to 1 by weight. A closely adjacent second reaction zone is formed containing a porous fibrous mass of active carbon or an infusible carbon precursor. The reaction zones are heated under a non-oxidizing atmosphere to temperatures at which silicon monoxide is formed in the first reaction zone, diffuses to the second reaction zone and reacts with carbon derived from the carbon precursor in the second reaction zone to form silicon carbide whiskers. A continuous supply of a whisker-forming catalyst is provided in the second reaction zone, at least in the vicinity where the silicon monoxide and carbon react with each other. This can be assured, for example, by providing the whisker-forming catalyst in the first reaction zone together with a catalyst volatilizing aid which enables the catalyst to diffuse to the second reaction zone along with the SiO. The first reaction zone may also contain a catalyst for the SiO producting reaction. By changing the starting materials, reaction temperatures etc. but using the same method steps, whiskers of other materials such as AlN, sialons, Si.sub.3l N.sub.4 l etc. can also be prepared.
    • 10. 发明授权
    • Process for producing silicon nitride
    • 氮化硅生产工艺
    • US4990471A
    • 1991-02-05
    • US262605
    • 1988-10-26
    • Mukesh K. JainSadashiv Nadkarni
    • Mukesh K. JainSadashiv Nadkarni
    • C01B21/068
    • C01B21/0685
    • A process for forming silicon nitride containing little or no silicon carbide. The process involves producing a uniform dispersion of finely divided silica particles in a polymer, heating the polymer/silica dispersion in a non-oxidizing atmosphere to carbonize the polymer, and heating the resulting carbonized product to a temperature in the range of 1300.degree.-1800.degree. C. in a non-oxidizing nitrogen-containing atmosphere. This latter heating step is carried out in the presence of a metal oxide (preferably alumina which is capable, in the reaction conditions, of reducing the amount of silicon carbide formed as an undesired by-product.
    • 一种形成少量或不含碳化硅的氮化硅的方法。 该方法包括在聚合物中产生细分二氧化硅颗粒的均匀分散体,在非氧化气氛中加热聚合物/二氧化硅分散体以使聚合物碳化,并将所得碳化产物加热至1300-11800℃的温度 在非氧化性含氮气氛中。 后一加热步骤在金属氧化物(优选氧化铝)的存在下进行,氧化铝在反应条件下能够减少作为不期望的副产物形成的碳化硅的量。