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    • 3. 发明授权
    • Permanent magnet type rotary electric machine
    • 永磁式旋转电机
    • US09013083B2
    • 2015-04-21
    • US12778424
    • 2010-05-12
    • Yusuke MoritaMasatsugu NakanoSachiko Kawasaki
    • Yusuke MoritaMasatsugu NakanoSachiko Kawasaki
    • H02K1/06H02K11/00H02K21/16H02K1/14H02K1/22H02K29/12H02K21/14H02K29/06
    • H02K1/146H02K1/223H02K21/14H02K21/16H02K29/06H02K29/12H02K2213/03
    • Provided is a permanent magnet type motor including: a rotor including a rotor core and a plurality of permanent magnets; a conducting circuit including a first electric conductor extending in an axial direction of the rotor and being disposed between permanent magnets in a circumferential direction of the rotor and a second electric conductor for connecting the first electric conductors electrically; and a stator disposed so as to be opposed to the rotor, including a stator core and an armature winding. A rotation angle is detected by measuring current flowing in the armature winding. The stator core is formed to have a shape in which, a slot pitch is defined by ρs=(2×π×Rs)/Ns, where an inner radius of the stator is represented by Rs and a number of slots is represented by Ns, a value Wsn obtained by dividing a slot opening width Ws by the slot pitch ρs satisfies “0.08≦Wsn”.
    • 提供一种永磁式电动机,其包括:转子,包括转子芯和多个永磁体; 导体电路,包括沿着转子的轴向延伸并且在转子的周向上设置在永磁体之间的第一导电体和用于电连接第一导电体的第二电导体; 以及与转子相对设置的定子,包括定子芯和电枢绕组。 通过测量在电枢绕组中流动的电流来检测旋转角度。 定子铁芯的形状是这样一种形状:槽间距由&rgr; s =(2×&pgr;×Rs)/ Ns定义,其中定子的内半径由Rs表示,槽数为 通过用Ns表示,通过将槽开口宽度Ws除以槽间距&rgrs而获得的值Wsn满足“0.08≦̸ Wsn”。
    • 5. 发明申请
    • PERMANENT MAGNET ROTATING ELECTRICAL MACHINE AND ELECTRIC POWER STEERING APPARATUS USING THE SAME
    • 永久磁铁旋转电机及电动转向装置
    • US20120139372A1
    • 2012-06-07
    • US13390305
    • 2009-11-24
    • Masatsugu NakanoToshihiro MatsunagaKazuhisa TakashimaSatoru AkutsuYusuke Morita
    • Masatsugu NakanoToshihiro MatsunagaKazuhisa TakashimaSatoru AkutsuYusuke Morita
    • H02K21/12H02K7/116
    • H02K1/148H02K29/03H02K2213/03
    • A compact, light permanent magnet motor with low torque pulsations is obtained by reducing a cogging torque resulting from variations at the end of a rotor, such as an error in attachment position and a variation in magnet characteristic of the permanent magnets.A permanent magnet rotating electrical machine includes a rotor having a rotor core and plural magnetic poles formed of permanent magnets provided to the rotor core, and a stator having plural teeth opposing the plural magnetic poles, a stator core provided with slots in which to store an armature winding wire wound around the teeth, and supplemental grooves provided to the teeth in portions opposing the rotor in an axial direction of the stator core. The permanent magnet rotating electrical machine is configured in such a manner that the supplemental grooves are provided to the stator in a part in the axial direction of the stator core, and that let P be the number of the magnetic poles (the number of poles) and S be the number of the slots (the number of slots), then a relation, 0.75
    • 通过减小由于转子端部的变化而导致的齿槽转矩,例如安装位置的误差和永久磁铁的磁铁特性的变化,可获得具有低转矩脉动的小型轻型永磁电动机。 一种永久磁铁式旋转电机,具有:转子铁心和设置在转子铁芯上的永久磁铁形成的多个磁极的转子,以及具有与上述多个磁极相对的多个齿的定子,具有槽, 缠绕在齿上的电枢绕组线,以及在定子芯的轴向方向上与转子相对的部分设置到齿的补充槽。 永久磁铁旋转电机的构成是,在定子铁芯的轴向的一部分中,向定子设置补充槽,使P为数量的磁极(极数) 并且S是时隙的数量(时隙数),则建立0.75
    • 10. 发明授权
    • Manufacturing method of semiconductor device
    • 半导体器件的制造方法
    • US08034696B2
    • 2011-10-11
    • US11802048
    • 2007-05-18
    • Ryuta TsuchiyaYoshinobu KimuraYusuke Morita
    • Ryuta TsuchiyaYoshinobu KimuraYusuke Morita
    • H01L21/20
    • C30B23/00C30B25/00
    • It is an object of the present invention to provide a method of manufacturing an SOI wafer at low cost and with high yield. It is another object of the present invention to provide a semiconductor device including also bulk type MISFETs used as high voltage regions and a method of manufacturing the same without using complicated processes and increasing the size of a semiconductor chip.The method of manufacturing a semiconductor device comprises selectively epitaxially growing a single-crystal Si layer and continuously performing the epitaxial growth without bringing a substrate temperature increased during the growth to room temperature even once. An epitaxially grown surface is then etched and planarized. The substrate temperature is then cooled down to the room temperature.
    • 本发明的目的是提供一种以低成本和高产率制造SOI晶片的方法。 本发明的另一个目的是提供一种半导体器件,其还包括用作高电压区域的体型型MISFET及其制造方法,而不需要使用复杂的工艺并增加半导体芯片的尺寸。 制造半导体器件的方法包括选择性地外延生长单晶Si层并连续进行外延生长,而不会使基板温度在生长至室温期间增加甚至一次。 然后将外延生长的表面蚀刻并平坦化。 然后将衬底温度冷却至室温。