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1. 发明公开

EP1003208A2 Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating same 审中-公开
标题翻译： Integrierte Schaltung mit selbstausgerichteter Wasserstoffbariereschicht und Herstellungsmethode
公开(公告)号：EP1003208A2
公开(公告)日：2000-05-24
申请号：EP99122247.2
申请日：1999-11-08
申请人： SYMETRIX CORPORATION , NEC Corporation
发明人： Cuchiaro, Joseph D. , Paz de Araujo, Carlos A. , Furuya, Akira, c/o NEC Corporation , Miyasaka, Yoichi,c/o NEC Corporation
IPC分类号： H01L21/28
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： In an integrated circuit, a stack of thin film (124) layers comprising respectively a bottom electrode (122), a thin film (124) of metal oxide, a top electrode (126), a lower barrier-adhesion layer (128), a hydrogen barrier layer (130), and an upper barrier-adhesion layer (132) are patterned to form a memory capacitor (120) capped with a self-aligned hydrogen barrier layer (130). Preferably, the top and bottom electrodes comprise platinum, the metal oxide material comprises ferroelectric layered superlattice material, the upper and lower barrier-adhesion layers comprise titanium, and the hydrogen barrier layer (130) comprises titanium nitride. The hydrogen barrier layer (130) inhibits diffusion of hydrogen, thereby preventing hydrogen degradation of the metal oxides. Part of the upper barrier-adhesion layer (132) is removed in order to increase the electrical conductivity in the layer. Preferably, the memory capacitor is a ferroelectric nonvolatile memory. Preferably, the layered superlattice material includes strontium bismuth tantalate or strontium bismuth tantalum niobate.
摘要翻译：在集成电路中，分别包括底部电极（122），金属氧化物薄膜（124），顶部电极（126），下部阻挡粘附层（128），薄膜（124）图案化氢阻挡层（130）和上阻挡层粘合层（132）以形成用自对准氢阻挡层（130）封盖的记忆电容器（120）。优选地，顶部和底部电极包括铂，金属氧化物材料包括铁电层状超晶格材料，上部和下部阻挡 - 粘附层包括钛，并且氢气阻挡层（130）包括氮化钛。氢阻挡层（130）抑制氢的扩散，从而防止金属氧化物的氢降解。去除上部阻挡 - 粘附层（132）的一部分以增加该层中的导电性。优选地，存储电容器是铁电非易失性存储器。优选地，层状超晶格材料包括铋铋钽酸锶或铌酸铋钽铌酸盐。

2. 发明公开

EP0954031A3 Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and including a hydrogen barrier layer, and method for fabricating the same 审中-公开
标题翻译：与氢接触的低灵敏度，具有氢阻挡层的铁电集成电路和其制造方法
公开(公告)号：EP0954031A3
公开(公告)日：2009-09-02
申请号：EP99102684.0
申请日：1999-02-12
申请人： SYMETRIX CORPORATION , NEC CORPORATION
发明人： Cuchiaro, Joseph D. , Feruya, Akira , Paz de Araujo, Carlos A. , Miyasaka, Yoichi
IPC分类号： H01L27/115 , H01L21/8247 , H01L21/02
CPC分类号： H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/55 , H01L28/75
摘要： A hydrogen barrier layer (128) is formed above a ferroelectric thin film (124) in an integrated circuit. The hydrogen barrier layer (128) is directly over a protected segment (123) of the ferroelectric thin film (124), while a sacrificial segment (125) of the ferroelectric thin film (124) extends laterally beyond the edges (129) of the hydrogen barrier layer (128). The sacrificial segment (125) absorbs hydrogen so that it cannot diffuse laterally into the protected segment (123) of the ferroelectric thin film (124). After it absorbs hydrogen, the sacrificial segment (125) is etched away to allow electrical connection to circuit layers below it. The ferroelectric thin film (124) preferably comprises a layered superlattice compound. Excess bismuth or niobium added to the standard precursor solution of a strontium bismuth tantalum niobate material helps to reduce hydrogen degradation of the ferroelectric properties.

3. 发明公开

EP1003208A3 Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating same 审中-公开
标题翻译：具有自对准Wasserstoffbariereschicht及其制造方法集成电路
公开(公告)号：EP1003208A3
公开(公告)日：2003-06-11
申请号：EP99122247.2
申请日：1999-11-08
申请人： SYMETRIX CORPORATION , NEC Corporation
发明人： Cuchiaro, Joseph D. , Paz de Araujo, Carlos A. , Furuya, Akira, c/o NEC Corporation , Miyasaka, Yoichi,c/o NEC Corporation
IPC分类号： H01L21/28 , H01L21/02 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： In an integrated circuit, a stack of thin film (124) layers comprising respectively a bottom electrode (122), a thin film (124) of metal oxide, a top electrode (126), a lower barrier-adhesion layer (128), a hydrogen barrier layer (130), and an upper barrier-adhesion layer (132) are patterned to form a memory capacitor (120) capped with a self-aligned hydrogen barrier layer (130). Preferably, the top and bottom electrodes comprise platinum, the metal oxide material comprises ferroelectric layered superlattice material, the upper and lower barrier-adhesion layers comprise titanium, and the hydrogen barrier layer (130) comprises titanium nitride. The hydrogen barrier layer (130) inhibits diffusion of hydrogen, thereby preventing hydrogen degradation of the metal oxides. Part of the upper barrier-adhesion layer (132) is removed in order to increase the electrical conductivity in the layer. Preferably, the memory capacitor is a ferroelectric nonvolatile memory. Preferably, the layered superlattice material includes strontium bismuth tantalate or strontium bismuth tantalum niobate.

4. 发明公开

EP0954019A2 Method for fabricating ferroelectric integrated circuits including a hydrogen heating step 审中-公开
标题翻译：一种制备的铁电集成电路的用氢退火步骤过程
公开(公告)号：EP0954019A2
公开(公告)日：1999-11-03
申请号：EP99102688.1
申请日：1999-02-12
申请人： SYMETRIX CORPORATION , NEC Corporation
发明人： Cuchiaro, Joseph D. , Furuya, Akira , Paz de Araujo , Miyasaki, Yoichi
IPC分类号： H01L21/324 , H01L21/316 , H01L27/115 , H01L21/8247 , G11C11/22
CPC分类号： H01L27/11502 , G11C11/22 , H01L21/28291 , H01L21/31691 , H01L21/324 , H01L27/11507 , H01L28/55 , H01L28/56
摘要： An integrated circuit is formed that contains a ferroelectric element (122) comprising metal oxide material containing at least two metals. Various methods and structures are applied to minimize the degradation of ferroelectric properties caused by hydrogen during fabrication of the circuit. Oxygen is added to some elements of the integrated circuit to serve as a getter of hydrogen during fabrication steps. To minimize hydrogen degradation, the ferroelectric compound can be fabricated from a liquid precursor containing one or more of the constituent metals in excess of the amount corresponding to a stoichiometrically balanced concentration. A hydrogen barrier layer (126), preferably comprising titanium nitride, is formed to cover the top of the ferroelectric element (122). A hydrogen heat treatment in hydrogen gas is performed on the integrated circuit at a temperature from 200° to 350°C and for a time period not exceeding 30 minutes to minimize degradation of the ferroelectric properties by hydrogen while restoring other properties of the integrated circuit. An oxygen recovery anneal at 800°C after high-energy hydrogen steps restores ferroelectric properties.
摘要翻译：一种集成电路形成确实包含一个铁电元件（122）包括含有至少两种金属的金属氧化物材料。各种方法和结构被施加到电路的制造过程中由氢引起的铁电特性的退化最小化。氧气被添加到集成电路的一些元件以用作氢的过程中制造步骤的吸气剂。为了最小化氢退化，铁电化合物可以从液体前体含有过量的化学计量量对应于一个平衡浓度组成金属的一个或多个来制造。氢阻挡层（126），优选地包括氮化钛，形成为覆盖铁电元件（122）的顶部。氢气中的氢热处理的温度下进行所述集成电路上从200℃至350℃并保持一定时间周期不超过30分钟的氢，同时恢复该集成电路的其它特性，以最小化铁电特性的退化。高能量的氢步骤后，在800℃的氧复原退火恢复铁电特性。

5. 发明公开

EP0951058A3 Method of fabricating ferroelectric integrated circuit using dry and wet etching 审中-公开
标题翻译：一种通过干法和湿法蚀刻的方式生产铁电集成电路工艺
公开(公告)号：EP0951058A3
公开(公告)日：2009-06-24
申请号：EP99102913.3
申请日：1999-02-12
申请人： SYMETRIX CORPORATION , NEC CORPORATION
发明人： Cuchiaro, Joseph D. , Furuya, Akira c/o NEC Corporation , Paz De Araujo, Carlos A. , Miyasaka, Yoichi c/o NEC Corporation
IPC分类号： H01L21/3213 , H01L27/115 , H01L21/02 , H01L21/8247 , H01L21/285 , H01L21/8242
CPC分类号： H01L27/11502 , H01L21/28568 , H01L21/32132 , H01L21/32134 , H01L21/32136 , H01L27/1085 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： In a ferroelectric integrated circuit, a hydrogen barrier layer (128, 628) comprising titanium or titanium nitride or both is formed over a metal oxide element (124) to protect it from hydrogen degradation. After hydrogen annealing and other process steps causing hydrogenating or reducing conditions, the hydrogen barrier layer is removed in a two-step etching process. The first etch step is a dry etch, preferably a standard ion-mill etching process, which rapidly removes most of the hydrogen barrier layer. The second step is a wet, chemical etch, preferably using a solution containing NH 4 OH, H 2 O 2 , and H 2 O, which selectively removes remanents of the hydrogen barrier layer from the circuit by oxidizing a chemical element of the barrier layer. The metal oxide material preferably comprises a layered superlattice material.

6. 发明公开

EP0951059A2 Method of fabricating ferroelectric integrated circuit using oxygen anneal to inhibit and repair hydrogen degradation 审中-公开
标题翻译：引起的氢气和修理用于为了抑制损坏生产具有氧退火的铁电集成电路的方法
公开(公告)号：EP0951059A2
公开(公告)日：1999-10-20
申请号：EP99102914.1
申请日：1999-02-12
申请人： SYMETRIX CORPORATION , NEC Corporation
发明人： Cuchiaro, Joseph D. , Furuya, Akira c/o NEC Corporation , Paz De Araujo, Carlos A. , Miyasaka, Yoichi c/o NEC Corporation
IPC分类号： H01L21/324 , H01L21/316 , H01L27/115 , H01L21/8247 , G11C11/22
CPC分类号： H01L27/11502 , H01L21/3003 , H01L21/31691 , H01L21/324 , H01L27/11507 , H01L28/55
摘要： An integrated circuit is formed that contains a ferroelectric element (122) comprising metal oxide material containing at least two metals. An oxygen-recovery anneal is conducted in ambient oxygen at a temperature range from 300° to 1000°C for a time period from 20 minutes to 2 hours. The oxygen-recovery anneal reverses the effects of hydrogen degradation and restores ferroelectric properties. The oxygen-recovery anneal is more effective as the annealing temperature and annealing time increase. Preferably the ferroelectric element comprises a layered superlattice compound. Hydrogen degradation of the ferroelectric properties is minimized when the layered superlattice compound comprises strontium bismuth tantalum niobate and the niobium/tantalum mole ratio in the precursor is about 0.4. Hydrogen degradation is further minimized when at least one of the superlattice generator-element and the B-site element of the layered superlattice compound is present in excess of the amounts represented by the balanced stoichiometric formula of the compound.
摘要翻译：一种集成电路形成确实包含一个铁电元件（122）包括含有至少两种金属的金属氧化物材料。氧复原退火是在环境氧的温度范围内进行300℃〜1000℃的时间段为20分钟至2小时。氧复原退火反转氢退化的影响，并恢复铁电特性。的氧复原退火是随着退火温度和退火时间的增加更加有效。优选铁电元件包括层状超晶格化合物。铁电体性质的氢退化最小化当层状超晶格化合物包括锶铌酸钽铋和前体中的铌/钽的摩尔比为约0.4。氢退化被进一步最小化当超晶格产生元素和层状超晶格化合物的B位元素中的至少一种是过量存在由所述化合物的平衡的化学计量式表示的量的。

7. 发明公开

EP1017104A3 Ferroelectric intergrated circuit with protective layer incorporating oxygen and method for fabricating same 审中-公开
标题翻译：铁电集成电路，其包括氧保护层和方法
公开(公告)号：EP1017104A3
公开(公告)日：2001-08-08
申请号：EP99122514.5
申请日：1999-11-11
申请人： SYMETRIX CORPORATION , NEC Corporation
发明人： Cuchiaro, Joseph D. , Furuya, Akira , Paz De Araujo, Carlos A. , Miyasaka, Yoichi
IPC分类号： H01L27/115 , H01L21/02 , H01L23/31 , H01L29/92 , H01L21/8246
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/56 , H01L2924/0002 , H01L2924/00
摘要： A protective layer(130, 135, 160) in a ferroelectric integrated circuit contains small amounts of oxygen to protect ferroelectric oxide material against hydrogen degradation during the fabrication process. Typically, the protective layer (130, 135) is a hydrogen diffusion barrier layer formed to cover a thin film of ferroelectric oxide material (124). In one method, a small amount of oxygen is included in the sputter atmosphere during deposition of a hydrogen diffusion barrier (130, 135) or a metallized wiring layer (160). The oxygen forms oxides that inhibit diffusion of hydrogen towards the ferroelectric oxide material. The oxygen forms a concentration gradient so that the oxygen concentration in the interior of the protective layer is zero, and the oxygen concentration near the surfaces of the layer is about two weight percent.

8. 发明公开

EP0951058A2 Method of fabricating ferroelectric integrated circuit using dry and wet etching 审中-公开
标题翻译：一种通过干法和湿法蚀刻的方式生产铁电集成电路工艺
公开(公告)号：EP0951058A2
公开(公告)日：1999-10-20
申请号：EP99102913.3
申请日：1999-02-12
申请人： SYMETRIX CORPORATION , NEC Corporation
发明人： Cuchiaro, Joseph D. , Furuya, Akira c/o NEC Corporation , Paz De Araujo, Carlos A. , Miyasaka, Yoichi c/o NEC Corporation
IPC分类号： H01L21/3213 , H01L27/115 , H01L21/316 , H01L21/8247 , H01G4/10 , G11C11/22
CPC分类号： H01L27/11502 , H01L21/28568 , H01L21/32132 , H01L21/32134 , H01L21/32136 , H01L27/1085 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： In a ferroelectric integrated circuit, a hydrogen barrier layer (128, 628) comprising titanium or titanium nitride or both is formed over a metal oxide element (124) to protect it from hydrogen degradation. After hydrogen annealing and other process steps causing hydrogenating or reducing conditions, the hydrogen barrier layer is removed in a two-step etching process. The first etch step is a dry etch, preferably a standard ion-mill etching process, which rapidly removes most of the hydrogen barrier layer. The second step is a wet, chemical etch, preferably using a solution containing NH 4 OH, H 2 O 2 , and H 2 O, which selectively removes remanents of the hydrogen barrier layer from the circuit by oxidizing a chemical element of the barrier layer. The metal oxide material preferably comprises a layered superlattice material.
摘要翻译：在铁电集成电路，包括钛或氮化钛氢阻挡层（128，628）或两者之上形成的金属氧化物元件（124），以保护其免受氢退化。氢退火及其它工艺步骤曹景伟氢化或还原条件后，氢阻挡层是在两步蚀刻工艺去除。第一蚀刻步骤是干式蚀刻，优选地是标准离子铣腐蚀工艺，从而迅速移除大部分的氢阻挡层的。第二步骤是湿的，化学蚀刻，优选使用含有NH 4 OH，H 2 O 2和H 2 O，其选择性通过氧化阻挡层的化学元素中删除从该电路的氢阻挡层的遗民的溶液，所述金属氧化物材料优选包括层状超晶格材料。

9. 发明公开

EP0954019A3 Method for fabricating ferroelectric integrated circuits including a hydrogen heating step 审中-公开
标题翻译：一种制备的铁电集成电路的用氢退火步骤过程
公开(公告)号：EP0954019A3
公开(公告)日：2009-07-01
申请号：EP99102688.1
申请日：1999-02-12
申请人： SYMETRIX CORPORATION , NEC CORPORATION
发明人： Cuchiaro, Joseph D. , Furuya, Akira , Paz de Araujo , Miyasaki, Yoichi
IPC分类号： H01L21/324 , H01L21/316 , H01L27/115 , H01L21/8247 , G11C11/22 , H01L21/02 , H01L21/314
CPC分类号： H01L27/11502 , G11C11/22 , H01L21/28291 , H01L21/31691 , H01L21/324 , H01L27/11507 , H01L28/55 , H01L28/56
摘要： An integrated circuit is formed that contains a ferroelectric element (122) comprising metal oxide material containing at least two metals. Various methods and structures are applied to minimize the degradation of ferroelectric properties caused by hydrogen during fabrication of the circuit. Oxygen is added to some elements of the integrated circuit to serve as a getter of hydrogen during fabrication steps. To minimize hydrogen degradation, the ferroelectric compound can be fabricated from a liquid precursor containing one or more of the constituent metals in excess of the amount corresponding to a stoichiometrically balanced concentration. A hydrogen barrier layer (126), preferably comprising titanium nitride, is formed to cover the top of the ferroelectric element (122). A hydrogen heat treatment in hydrogen gas is performed on the integrated circuit at a temperature from 200° to 350°C and for a time period not exceeding 30 minutes to minimize degradation of the ferroelectric properties by hydrogen while restoring other properties of the integrated circuit. An oxygen recovery anneal at 800°C after high-energy hydrogen steps restores ferroelectric properties.

10. 发明公开

EP0951059A3 Method of fabricating ferroelectric integrated circuit using oxygen anneal to inhibit and repair hydrogen degradation 审中-公开
标题翻译：引起的氢气和修理用于为了抑制损坏生产具有氧退火的铁电集成电路的方法
公开(公告)号：EP0951059A3
公开(公告)日：2009-07-01
申请号：EP99102914.1
申请日：1999-02-12
申请人： SYMETRIX CORPORATION , NEC CORPORATION
发明人： Cuchiaro, Joseph D. , Furuya, Akira c/o NEC Corporation , Paz De Araujo, Carlos A. , Miyasaka, Yoichi c/o NEC Corporation
IPC分类号： H01L21/316 , H01L27/115 , H01L21/8247 , G11C11/22 , H01L21/02 , H01L21/314 , H01L21/324 , H01L21/30
CPC分类号： H01L27/11502 , H01L21/3003 , H01L21/31691 , H01L21/324 , H01L27/11507 , H01L28/55
摘要： An integrated circuit is formed that contains a ferroelectric element (122) comprising metal oxide material containing at least two metals. An oxygen-recovery anneal is conducted in ambient oxygen at a temperature range from 300° to 1000°C for a time period from 20 minutes to 2 hours. The oxygen-recovery anneal reverses the effects of hydrogen degradation and restores ferroelectric properties. The oxygen-recovery anneal is more effective as the annealing temperature and annealing time increase. Preferably the ferroelectric element comprises a layered superlattice compound. Hydrogen degradation of the ferroelectric properties is minimized when the layered superlattice compound comprises strontium bismuth tantalum niobate and the niobium/tantalum mole ratio in the precursor is about 0.4. Hydrogen degradation is further minimized when at least one of the superlattice generator-element and the B-site element of the layered superlattice compound is present in excess of the amounts represented by the balanced stoichiometric formula of the compound.

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