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1. 发明申请

WO1997044712A1 PHOTOSENSITIVE SOLUTIONS AND USE THEREOF IN MAKING THIN FILMS 审中-公开
标题翻译：敏感性解决方案及其在制作薄膜中的应用
公开(公告)号：WO1997044712A1
公开(公告)日：1997-11-27
申请号：PCT/US1997008955
申请日：1997-05-23
申请人： SYMETRIX CORPORATION
发明人： SYMETRIX CORPORATION , UCHIDA, Hiroto , SOYAMA, Nobuyuki , KAGEYAMA, Kensuke , OGI, Katsumi , SCOTT, Michael, C. , MCMILLAN, Larry, D. , PAZ DE ARAUJO, Carlos, A.
IPC分类号： G03F07/004
CPC分类号： H01L21/02172 , G03F7/0047 , H01L21/02282 , H01L21/312 , H01L21/31691 , H01L28/55
摘要： A photosensitive liquid solution (106) is used to make thin films for use in integrated circuits. The photosensitive liquid solution contains a photo initiator, and solvent, and a mixture of metals bonded to free-radical-susceptible monomers. The metals are mixed in amounts corresponding to the desired stoichiometry of a metal oxide thin film that derives from the solution. The photosensitive liquid solution is applied (P206) to a substrate (100), soft baked (P208), and exposed (P210) to ultraviolet radiation (116) under a photo mask (112). The ultraviolet radiation patterns the soft-baked film through a free radical polymerization chain reaction. A solvent etch (P212) is used to remove the unpolymerized portion of the polymerized film. The remaining thin film pattern is annealed to provide a patterned metal oxide film.
摘要翻译：使用感光性液体溶液（106）制造用于集成电路的薄膜。感光性液体溶液含有光引发剂和溶剂，以及与自由基易感单体结合的金属的混合物。金属以对应于从溶液衍生的金属氧化物薄膜的期望化学计量的量来混合。将光敏液体溶液（P206）施加到基材（100）上，软烘烤（P208），并在光掩模（112）下暴露（P210）至紫外线辐射（116）。紫外线辐射通过自由基聚合反应形成软烘烤膜。使用溶剂蚀刻（P212）去除聚合膜的未聚合部分。剩余的薄膜图案被退火以提供图案化的金属氧化物膜。

2. 发明申请

WO1998028466A1 COMPOSITION AND PROCESS FOR FABRICATING METAL OXIDE FILMS 审中-公开
标题翻译：用于制造金属氧化物膜的组合物和方法
公开(公告)号：WO1998028466A1
公开(公告)日：1998-07-02
申请号：PCT/US1997023510
申请日：1997-12-23
申请人： SYMETRIX CORPORATION , MITSUBISHI MATERIALS CORPORATION
发明人： SYMETRIX CORPORATION , MITSUBISHI MATERIALS CORPORATION , UCHIDA, Hiroto , SOYAMA, Nobuyuki , KAGEYAMA, Kensuke , OGI, Katsumi , BACON, Jeffrey, W. , SCOTT, Michael, C. , McMILLAN, Larry, D. , PAZ DE ARAUJO, Carlos, A.
IPC分类号： C23C18/12
CPC分类号： C23C18/1216 , C23C18/1279
摘要： A metal organic liquid precursor solution includes metal organic complexes dispersed in an ester solvent. The ester solvent has medium length carbon chains to prevent the precipitation of strongly electropositive metals in solution. A liquid precursor solution is used to make thin film metal oxides of uniform thickness and consistent quality.
摘要翻译：金属有机液体前体溶液包括分散在酯溶剂中的金属有机配合物。酯溶剂具有中等长度的碳链以防止溶液中强正电性金属的沉淀。使用液体前体溶液制备厚度均匀且品质一致的薄膜金属氧化物。

3. 发明申请

WO1998005071A1 METHOD OF FABRICATING AN INTEGRATED CIRCUIT USING SELF-PATTERNED THIN FILMS 审中-公开
标题翻译：使用自制薄膜制作集成电路的方法
公开(公告)号：WO1998005071A1
公开(公告)日：1998-02-05
申请号：PCT/US1997013483
申请日：1997-07-25
申请人： SYMETRIX CORPORATION
发明人： SYMETRIX CORPORATION , UCHIDA, Hiroto , SOYAMA, Nobuyuki , OGI, Katsumi , SCOTT, Michael, C. , CUCHIARO, Joseph, D. , MCMILLAN, Larry, D. , PAZ DE ARAUJO, Carlos, A.
IPC分类号： H01L27/115
CPC分类号： H01L27/11502 , H01L28/55
摘要： A first photosensitive liquid solution is applied to a substrate (21, 105, 125, 155, 188, 255), patterned through exposure to radiation and development, and annealed to form a layered superlattice material (34, 34A, 34B, 34D, 106, 126, 157, 176, 256, 286, 434) that is incorporated into a component (30, 30A, 30B, 30D, 101, 121, 330) of an integrated circuit (50, 60, 64, 70). Fabrication processes are designed to protect the self-patterned material from conventional IC processing and to protect the conventional materials, such as silicon, from elements in the self-patterned layered superlattice material. In one embodiment, a layer of bismuth oxide (158) is formed on SrBi2Ta2O9 (156) and a silicon oxide hole (162) is etched to the bismuth oxide. The bismuth oxide protects the SrBi2Ta2O9 from the etchant, and is reduced by the etchant to bismuth. Any remaining bismuth oxide and much of the bismuth are vaporized in the anneal, and the remaining bismuth is incorporated into the SrBi2Ta2O9. In another embodiment, a transitor (22) on a silicon substrate is covered by an insulating layer (31). A conducting plug (38) passes through the insulating layer to the transistor drain (24). The bottom electrode (32) of a layered superlattice material capacitor (30) directly overlies the plug and contacts the plug. The layered superlattice material completely overlies the transistor. A self-patterned sacrificial layer (40) completely overlies the layered superlattice material. The bottom electrode of the capacitor is completely enclosed by the layered superlattice material, the insulting layer, and the conducting plug.
摘要翻译：将第一感光性液体溶液施加到通过暴露于辐射和显影而图案化的基板（21,105,125,155,188,255），并且退火以形成分层超晶格材料（34,34A，34B，34D，106 ，126，157，176，256，286，434），其被集成到集成电路（50,60,64,70）的组件（30,30A，30B，30D，101,121,330）中。设计制造工艺以保护自组装图案材料免于常规IC处理，并且保护常规材料（例如硅）免受自图形分层超晶格材料中的元素的影响。在一个实施例中，在SrBi 2 Ta 2 O 9（156）上形成氧化铋层（158），氧化铋蚀刻氧化硅孔（162）。氧化铋保护SrBi2Ta2O9与蚀刻剂的相互作用，并被腐蚀剂还原成铋。任何剩余的氧化铋和大部分铋在退火过程中被蒸发，剩余的铋掺入到SrBi2Ta2O9中。在另一个实施例中，硅衬底上的过渡器（22）被绝缘层（31）覆盖。导电插头（38）穿过绝缘层到晶体管漏极（24）。分层超晶格材料电容器（30）的底部电极（32）直接覆盖在插头上并接触插头。分层超晶格材料完全覆盖晶体管。自图案化牺牲层（40）完全覆盖层状超晶格材料。电容器的底部电极被层状超晶格材料，绝缘层和导电插塞完全封闭。

4. 发明公开

EP0894155A1 COMPOSITION AND PROCESS FOR FABRICATING METAL OXIDE FILMS 失效
标题翻译：联合国组成工艺用于生产METALLOXYDFILMEN
公开(公告)号：EP0894155A1
公开(公告)日：1999-02-03
申请号：EP97954177.0
申请日：1997-12-23
申请人： SYMETRIX CORPORATION , Mitsubishi Materials Corporation
发明人： UCHIDA, Hiroto , SOYAMA, Nobuyuki , KAGEYAMA, Kensuke , OGI, Katsumi , BACON, Jeffrey, W. , SCOTT, Michael, C. , McMILLAN, Larry, D. , PAZ DE ARAUJO, Carlos, A.
IPC分类号： C01B13 , C01G33 , C01G35 , C23C18 , H01L21 , H01L27
CPC分类号： C23C18/1216 , C23C18/1279
摘要： A metal organic liquid precursor solution includes metal organic complexes dispersed in an ester solvent. The ester solvent has medium length carbon chains to prevent the precipitation of strongly electropositive metals in solution. A liquid precursor solution is used to make thin film metal oxides of uniform thickness and consistent quality.

5. 发明授权

EP0894155B1 COMPOSITION AND PROCESS FOR FABRICATING METAL OXIDE FILMS 失效
标题翻译：组合物及其制备方法METALLOXYDFILMEN
公开(公告)号：EP0894155B1
公开(公告)日：2003-04-16
申请号：EP97954177.8
申请日：1997-12-23
申请人： SYMETRIX CORPORATION , Mitsubishi Materials Corporation
发明人： UCHIDA, Hiroto , SOYAMA, Nobuyuki , KAGEYAMA, Kensuke , OGI, Katsumi , BACON, Jeffrey, W. , SCOTT, Michael, C. , McMILLAN, Larry, D. , PAZ DE ARAUJO, Carlos, A.
IPC分类号： C23C18/12
CPC分类号： C23C18/1216 , C23C18/1279

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