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1. 发明申请

WO2011097056A3 SOLAR CELLS AND METHODS OF FABRICATION THEREOF 审中-公开
公开(公告)号：WO2011097056A3
公开(公告)日：2011-08-11
申请号：PCT/US2011/021146
申请日：2011-01-13
申请人： SUNIVA, INC. , MEIER, Daniel, L. , CHANDRASEKARAN, Vinodh , PAYNE, Adam, M.
发明人： MEIER, Daniel, L. , CHANDRASEKARAN, Vinodh , PAYNE, Adam, M.
IPC分类号： H01L31/0224 , H01L31/0288 , H01L31/068
摘要： Solar cells and methods for fabrication thereof are provided. A method may include forming a via through at least one dielectric layer formed on a semiconductor wafer by using a laser to ablate a region of the at least one dielectric layer such that at least a portion of the surface of the semiconductor wafer is exposed by the via. The method may further include applying a self-doping metal paste to the via. The method may additionally include heating the semiconductor wafer and self-doping metal paste to a temperature sufficient to drive at least some dopant from the self-doping metal paste into the portion of the surface of the semiconductor wafer exposed by the via to form a selective emitter region and a contact overlying and self-aligned to the selective emitter region.

2. 发明申请

WO2011085143A2 SOLAR CELL INCLUDING SPUTTERED REFLECTIVE LAYER AND METHOD OF MANUFACTURE THEREOF 审中-公开
标题翻译：包括溅射反射层的太阳能电池及其制造方法
公开(公告)号：WO2011085143A2
公开(公告)日：2011-07-14
申请号：PCT/US2011/020436
申请日：2011-01-07
申请人： SUNIVA, INC. , MEIER, Daniel L. , CHANDRASEKARAN, Vinodh , MCPHERSON, Bruce
发明人： MEIER, Daniel L. , CHANDRASEKARAN, Vinodh , MCPHERSON, Bruce
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/056 , H01L31/068 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Solar cells and methods for their manufacture are disclosed. An exemplary method may include providing a semiconductor substrate and introducing dopant atoms to a front surface of the substrate. The substrate may be annealed to drive the dopant atoms deeper in the substrate to produce a p-n junction while also forming front and back passivation layers. A reflective surface is sputtered on the back surface of the solar cell. It protects and generates hydrogen to passivate one or more substrate-passivation layer interfaces at the same time as forming an anti- reflective layer on the front surface of the substrate. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided.
摘要翻译：公开了太阳能电池及其制造方法。示例性方法可以包括提供半导体衬底并将掺杂剂原子引入衬底的前表面。衬底可被退火以在衬底中更深地驱动掺杂剂原子以产生p-n结，同时还形成正面和反面钝化层。反射表面溅射在太阳能电池的背面上。它在保护和产生氢以钝化一个或多个衬底钝化层界面，同时在衬底的前表面上形成抗反射层。可以在单次共烧操作中进行前后触点的穿透以及具有接触连接的金属化。还提供了相关的太阳能电池。

3. 发明申请

WO2011152982A2 ION IMPLANTED SELECTIVE EMITTER SOLAR CELLS WITH IN SITU SURFACE PASSIVATION 审中-公开
标题翻译：离子入侵选择性发射太阳能电池与表面钝化
公开(公告)号：WO2011152982A2
公开(公告)日：2011-12-08
申请号：PCT/US2011/036602
申请日：2011-05-16
申请人： SUNIVA, INC. , ROHATGI, Ajeet , YELUNDUR, Vijay , CHANDRASEKARAN, Vinodh , DAVIS, Hubert, Preston , DAMIANI, Ben
发明人： ROHATGI, Ajeet , YELUNDUR, Vijay , CHANDRASEKARAN, Vinodh , DAVIS, Hubert, Preston , DAMIANI, Ben
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L21/263 , H01L21/26513 , H01L21/2658 , H01L21/266 , H01L31/02363 , H01L31/068 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Solar cells and methods for their manufacture are disclosed. An example method may include providing a p-type doped silicon substrate and introducing n- type dopant to a first and second region of the front surface of the substrate by ion implantation so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to activate the dopant, drive the dopant into the substrate, produce a p-n junction, and form a selective emitter. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided.
摘要翻译：公开了太阳能电池及其制造方法。示例性方法可以包括提供p型掺杂硅衬底，并通过离子注入将n型掺杂剂引入衬底的前表面的第一和第二区域，使得第二区域比第一区域更重掺杂。衬底可以经历单个高温退火循环以激活掺杂剂，将掺杂剂驱动到衬底中，产生p-n结，并形成选择性发射极。可以在单个退火循环期间引入氧气以形成原位前后钝化氧化物层。可以在单次共烧操作中进行前后触点的穿透以及具有接触连接的金属化。还提供了相关的太阳能电池。

4. 发明申请

WO2014051629A1 BUS BAR FOR A SOLAR CELL 审中-公开
标题翻译：用于太阳能电池的母线
公开(公告)号：WO2014051629A1
公开(公告)日：2014-04-03
申请号：PCT/US2012/058151
申请日：2012-09-29
申请人： SUNIVA, INC. , GUPTA, Atul , CHANDRASEKARAN, Vinodh , ROBERTS, John
发明人： GUPTA, Atul , CHANDRASEKARAN, Vinodh , ROBERTS, John
IPC分类号： H01L31/042 , H01L31/0224
CPC分类号： H01L31/022433 , H01L31/02245 , Y02E10/50
摘要： Various embodiments of the present invention are directed to a reduced-area bus bar for collecting current from contacts on the surface of a solar cell. According to various embodiments described herein, a reduced-area bus bar is provided having a width that varies at various points along its longitudinal axis. In particular, the larger width portions of the reduced-area bus bar are configured to provide sufficient pull strength when an interconnecting ribbon is soldered along the bus bar, while the smaller width portions of the reduced-area bus bar enable a reduction in the material required to form the bus bar. Additionally, various embodiments are contemplated in which the reduced-area bus bar comprises a series of segments disposed in a spaced-apart relationship along the bus bar's longitudinal axis.
摘要翻译：本发明的各种实施例涉及用于从太阳能电池表面上的触点收集电流的减小区域母线。根据本文所描述的各种实施例，提供了一种缩小区域汇流条，其宽度在其纵向轴线的各个点处变化。特别地，缩小面积母线的较大宽度部分构造成当互连带沿着母线焊接时提供足够的拉伸强度，而减小区域汇流条的较小宽度部分能够减少材料要求形成母线。另外，可以想到各种实施例，其中减小区域母线包括沿着母线的纵向轴线以间隔开的关系设置的一系列段。

5. 发明申请

WO2012027000A2 BACK JUNCTION SOLAR CELL WITH SELECTIVE FRONT SURFACE FIELD 审中-公开
标题翻译：具有选择性前表面场的背面连接太阳能电池
公开(公告)号：WO2012027000A2
公开(公告)日：2012-03-01
申请号：PCT/US2011/036730
申请日：2011-05-17
申请人： SUNIVA, INC. , MEIER, Daniel , ROHATGI, Ajeet , CHANDRASEKARAN, Vinodh , YELUNDUR, Vijay , DAVIS, Hubert, Preston , DAMIANI, Ben
发明人： MEIER, Daniel , ROHATGI, Ajeet , CHANDRASEKARAN, Vinodh , YELUNDUR, Vijay , DAVIS, Hubert, Preston , DAMIANI, Ben
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells and methods for their manufacture are disclosed. An example method may include fabricating an n-type silicon substrate and introducing n-type dopant to one or more first and second regions of the substrate so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to form a selective front surface field layer. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co- firing operation. The firing of the back contact may form a p+ emitter layer at the interface of the substrate and back contacts, thus forming a p-n junction at the interface of the emitter layer and the substrate. Associated solar cells are also provided.
摘要翻译：公开了太阳能电池及其制造方法。示例性方法可以包括制造n型硅衬底并将n型掺杂剂引入衬底的一个或多个第一和第二区域，使得第二区域比第一区域更重掺杂。可以对衬底进行单个高温退火循环以形成选择性前表面场层。可以在单个退火循环期间引入氧气以形成原位前后钝化氧化物层。可以在单次共同点火操作中执行前触点和后触点的穿透以及具有接触连接的金属化。背接触的点火可以在衬底和背接触的界面处形成p +发射极层，从而在发射极层和衬底的界面处形成p-n结。还提供了相关的太阳能电池。

6. 发明申请

WO2011152986A2 SELECTIVE EMITTER SOLAR CELLS FORMED BY A HYBRID DIFFUSION AND ION IMPLANTATION PROCESS 审中-公开
标题翻译：通过混合扩散和离子植入过程形成的选择性发射极太阳能电池
公开(公告)号：WO2011152986A2
公开(公告)日：2011-12-08
申请号：PCT/US2011/036720
申请日：2011-05-17
申请人： SUNIVA, INC. , ROHATGI, Ajeet , YELUNDUR, Vijay , DAVIS, Hubert, Preston , CHANDRASEKARAN, Vinodh , DAMIANI, Ben
发明人： ROHATGI, Ajeet , YELUNDUR, Vijay , DAVIS, Hubert, Preston , CHANDRASEKARAN, Vinodh , DAMIANI, Ben
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L21/263 , H01L21/26513 , H01L21/266 , H01L31/02363 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： Solar cells and methods for their manufacture are disclosed. An example method may include providing a silicon substrate and introducing dopant to one or more selective regions of the front surface of the substrate by ion implantation. The substrate may be subjected to a single high-temperature anneal cycle. Additional dopant atoms may be introduced for diffusion into the front surface of the substrate during the single anneal cycle. A selective emitter may be formed on the front surface of the substrate such that the one or more selective regions of the selective emitter layer are more heavily doped than the remainder of the selective emitter layer. Associated solar cells are also provided.
摘要翻译：公开了太阳能电池及其制造方法。示例性方法可以包括提供硅衬底并通过离子注入将掺杂剂引入到衬底的前表面的一个或多个选择性区域。衬底可以经受单个高温退火循环。在单个退火循环期间，可引入另外的掺杂剂原子用于扩散到衬底的前表面。选择性发射极可以形成在衬底的前表面上，使得选择性发射极层的一个或多个选择性区域比选择性发射极层的其余部分更重掺杂。还提供了相关的太阳能电池。

7. 发明公开

EP2534694A2 SOLAR CELLS AND METHODS OF FABRICATION THEREOF 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：EP2534694A2
公开(公告)日：2012-12-19
申请号：EP11701908.3
申请日：2011-01-13
申请人： Suniva, Inc.
发明人： MEIER, Daniel, L. , CHANDRASEKARAN, Vinodh , PAYNE, Adam, M.
IPC分类号： H01L31/0224 , H01L31/0288 , H01L31/068
CPC分类号： H01L31/0288 , H01L31/022425 , H01L31/068 , Y02E10/547
摘要： Solar cells and methods for fabrication thereof are provided. A method may include forming a via through at least one dielectric layer formed on a semiconductor wafer by using a laser to ablate a region of the at least one dielectric layer such that at least a portion of the surface of the semiconductor wafer is exposed by the via. The method may further include applying a self-doping metal paste to the via. The method may additionally include heating the semiconductor wafer and self-doping metal paste to a temperature sufficient to drive at least some dopant from the self-doping metal paste into the portion of the surface of the semiconductor wafer exposed by the via to form a selective emitter region and a contact overlying and self-aligned to the selective emitter region.

8. 发明公开

EP2577745A2 ION IMPLANTED SELECTIVE EMITTER SOLAR CELLS WITH IN SITU SURFACE PASSIVATION 审中-公开
标题翻译：离子植入选择性发射极太阳能电池的原位表面钝化
公开(公告)号：EP2577745A2
公开(公告)日：2013-04-10
申请号：EP11721926.1
申请日：2011-05-16
申请人： Suniva, Inc.
发明人： ROHATGI, Ajeet , YELUNDUR, Vijay , CHANDRASEKARAN, Vinodh , DAVIS, Hubert, Preston , DAMIANI, Ben
IPC分类号： H01L31/068 , H01L21/263 , H01L31/18 , H01L21/266 , H01L21/265
CPC分类号： H01L31/1804 , H01L21/263 , H01L21/26513 , H01L21/2658 , H01L21/266 , H01L31/02363 , H01L31/068 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Solar cells and methods for their manufacture are disclosed. An example method may include providing a p-type doped silicon substrate and introducing n-type dopant to a first and second region of the front surface of the substrate by ion implantation so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to activate the dopant, drive the dopant into the substrate, produce a p-n junction, and form a selective emitter. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided.

9. 发明公开

EP2609631A2 BACK JUNCTION SOLAR CELL WITH SELECTIVE FRONT SURFACE FIELD 审中-公开
标题翻译：与后连接和选择性的前区太阳能领域CELL
公开(公告)号：EP2609631A2
公开(公告)日：2013-07-03
申请号：EP11721938.6
申请日：2011-05-17
申请人： Suniva, Inc.
发明人： MEIER, Daniel , ROHATGI, Ajeet , CHANDRASEKARAN, Vinodh , YELUNDUR, Vijay , DAVIS, Hubert, Preston , DAMIANI, Ben
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Solar cells and methods for their manufacture are disclosed. An example method may include fabricating an n-type silicon substrate and introducing n-type dopant to one or more first and second regions of the substrate so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to form a selective front surface field layer. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co- firing operation. The firing of the back contact may form a p+ emitter layer at the interface of the substrate and back contacts, thus forming a p-n junction at the interface of the emitter layer and the substrate. Associated solar cells are also provided.

10. 发明公开

EP2577748A2 SELECTIVE EMITTER SOLAR CELLS FORMED BY A HYBRID DIFFUSION AND ION IMPLANTATION PROCESS 审中-公开
标题翻译： SOLARZELLEN MIT SELEKTIVEM发射器，DIE DURCH EINEN HYBRIDDIFUSIONS- UND IONENIMPLANTATIONSVORGANG GEBILDET WERDEN
公开(公告)号：EP2577748A2
公开(公告)日：2013-04-10
申请号：EP11721686.1
申请日：2011-05-17
申请人： Suniva, Inc.
发明人： ROHATGI, Ajeet , YELUNDUR, Vijay , DAVIS, Hubert, Preston , CHANDRASEKARAN, Vinodh , DAMIANI, Ben
IPC分类号： H01L31/18 , H01L31/068 , H01L21/265
CPC分类号： H01L31/1804 , H01L21/263 , H01L21/26513 , H01L21/266 , H01L31/02363 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： Solar cells and methods for their manufacture are disclosed. An example method may include providing a silicon substrate and introducing dopant to one or more selective regions of the front surface of the substrate by ion implantation. The substrate may be subjected to a single high-temperature anneal cycle. Additional dopant atoms may be introduced for diffusion into the front surface of the substrate during the single anneal cycle. A selective emitter may be formed on the front surface of the substrate such that the one or more selective regions of the selective emitter layer are more heavily doped than the remainder of the selective emitter layer. Associated solar cells are also provided.
摘要翻译：公开了太阳能电池及其制造方法。示例性方法可以包括提供硅衬底并通过离子注入将掺杂剂引入衬底的前表面的一个或多个选择性区域。可以对衬底进行单个高温退火循环。在单个退火循环期间，可引入另外的掺杂剂原子用于扩散到衬底的前表面。选择性发射极可以形成在衬底的前表面上，使得选择性发射极层的一个或多个选择性区域比选择性发射极层的其余部分更重掺杂。还提供了相关的太阳能电池。

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