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1. 发明公开

EP1039557A1 SILICON BASED CONDUCTIVE MATERIAL AND PROCESS FOR PRODUCTION THEREOF 审中-公开
标题翻译：维多利亚ZER HERSTELLUNG SILIZIUMHALTENDES LEITENDES材料
公开(公告)号：EP1039557A1
公开(公告)日：2000-09-27
申请号：EP98937838.5
申请日：1998-08-14
申请人： SUMITOMO SPECIAL METALS COMPANY LIMITED
发明人： HARUYAMA, Shunichi , YAMASHITA, Osamu , SADATOMI, Nobuhiro , SAIGOU, Tsunekazu
IPC分类号： H01L35/14 , H01L21/44 , H01L35/34 , H01L29/43 , H01L21/28
CPC分类号： H01L35/22 , H01B1/04 , H01L23/49872 , H01L23/49883 , H01L23/53271 , H01L23/5328 , H01L35/16 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A silicon based conductive material based on a semiconductor silicon and having an electric resistivity of 10 -3 (Ω·m) or less at ambient temperature which has been unattainable heretofore, while facilitating production and handling. An electric resistivity of 10 -6 (Ω·m) or less, which is common for conductors can be realized by adding relatively large quantities of various kinds of elements to silicon. The conductive material can be provided in a semiconductor silicon substrate in a desired pattern by ion beam implantation and patterning. It can be employed not only in the form of a substrate, a rod or a wire, but also in the form of fine particles dispersed in a resin or glass to be employed in various applications requiring conduction, including a conductive sheet material.
摘要翻译：在环境温度下，基于半导体硅的电阻率为10 -3（-3.0）的硅基导电材料）在此之前一直是无法实现的，同时便于生产和处理。通过向硅中添加相对大量的各种元素，可以实现导体常用的10 -6（Ω·m）以下的电阻率（OMEGA·m）以下。导电材料可以通过离子束注入和图案化以期望的图案提供在半导体硅衬底中。不仅可以以基板，棒或线的形式使用，而且还可以以分散在树脂或玻璃中的细颗粒的形式使用，以用于需要导电的各种应用，包括导电片材。

2. 发明公开

EP1324400A1 THERMOELECTRIC CONVERSION ELEMENT 审中-公开
标题翻译：热电元件实现
公开(公告)号：EP1324400A1
公开(公告)日：2003-07-02
申请号：EP01965623.0
申请日：2001-09-13
申请人： SUMITOMO SPECIAL METALS COMPANY LIMITED
发明人： SADATOMI, Nobuhiro , SAIGO, Tsunekazu
IPC分类号： H01L35/08 , H01L35/14 , H01L35/32
CPC分类号： H01L35/32 , H01L35/22
摘要： A high-performance thermoelectric conversion ele-ment using an Si-group thermoelectric conversion material, and an thermoelectric conversion element capable of providing a high-out-put power by improving a power -generating efficiency, wherein the thermal expansion coefficient of an electrode material is set to up to 1 0 ppm/K in order to provide a good electrode joining between a p-type thermoelectric conversion material and a n-type thermo-electric. conversion material consisting of an Si-group thermoelec-tric conversion material to thereby ease thermal stress and prevent cracking and breaking at ajoining portion, and, in joining, a brazing filler material selected according to a working temperature range is interposed to thereby provide good joining characteristics, reduce an output loss, and improve a heat resistance and a heat -cycle resistance.

3. 发明公开

EP1039556A1 THERMOELECTRIC TRANSDUCING MATERIAL AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：热带烟草在西班牙赫尔辛基
公开(公告)号：EP1039556A1
公开(公告)日：2000-09-27
申请号：EP98936676.0
申请日：1998-08-05
申请人： SUMITOMO SPECIAL METALS COMPANY LIMITED
发明人： YAMASHITA, Osamu , SADATOMI, Nobuhiro , SAIGO, Tsunekazu
IPC分类号： H01L35/14 , H01L35/34
CPC分类号： H01L35/22 , H01L23/49872 , H01L23/49883 , H01L23/53271 , H01L23/5328 , H01L35/16 , H01L2924/0002 , H01L2924/00
摘要： A novel silicon-base thermoelectric transducing material containing a P- or N-type semiconductor obtained by adding various impurities to Si, which is produced with good productivity at low cost and has a stable quality and a high performance index. Generally when various elements are added to Si, the Seebeck coefficient of the material decreases with the carrier concentration until the carrier concentration exceeds 10 18 M/m 3 , and a minimum value of the Seebeck coefficient is in a range from 10 18 to 10 19 M/m 3 . The material of the invention is a P- or N-type semiconductor having a carrier concentration of 10 17 to 10 20 M/m 3 and containing Si and 0.001 to 0.5 atomic % of one or more elements of Be, Mg, Ca, Sr, Ba Zn, Cd, Hg, B, Al, Ga, In, and Tl, or one or more elements of N, P, As, Sb, Bi, O, S, Se, and Te, and another material is a P- or N-type semiconductor having a carrier concentration of 10 19 to 10 21 M/m 3 and containing Si and 0.5 to 10 atomic % of one or more of the elements.
摘要翻译：一种新颖的硅基热电转换材料，其含有通过向Si中添加各种杂质而获得的P-型或N型半导体，其以低成本生产且具有稳定的质量和高的性能指数。通常当将各种元素添加到Si时，材料的塞贝克系数随着载流子浓度而降低，直到载流子浓度超过10 18 M / m 3，塞贝克系数的最小值在10 18至10 19 M / m 3。本发明的材料是载流子浓度为10 17至10 20 M / m 3并含有Si和0.001至0.5原子％的一种或多种元素的P型或N型半导体，Mg，Ca，Sr，Ba Zn，Cd，Hg，B，Al，Ga，In和Tl，或N，P，As，Sb，Bi，O，S，Se和Te中的一种或多种元素，另一种材料是载流子浓度为10 19至10 21 M / m 3并含有Si和0.5至10原子％的一种或多种元素的P-型或N型半导体。

4. 发明公开

EP1083610A1 THERMOELECTRIC CONVERSION MATERIAL AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译： HERMTELLUNGSVERFAHRENDAFÜR热敏电阻
公开(公告)号：EP1083610A1
公开(公告)日：2001-03-14
申请号：EP00908000.3
申请日：2000-03-10
申请人： SUMITOMO SPECIAL METALS COMPANY LIMITED
发明人： SADATOMI, Nobuhiro , YAMASHITA, Osamu , SAIGO, Tsunekazu , NOUMI, Masao
IPC分类号： H01L35/14
CPC分类号： H01L35/22 , H01L35/34
摘要： It is an object of the present invention to provide a silicon-based thermoelectric conversion material and thermoelectric conversion element with which the thermal conductivity of a silicon-based thermoelectric conversion material can be lowered without decreasing the Seebeck coefficient and electrical conductivity of the material, which affords a marked increase in the Figure of merit. A polycrystal structure comprises crystal grains composed of a silicon-rich phase, and a added element-rich phase in which at least one type of added element is deposited at the grain boundary thereof, the result of which is an extremely large Seebeck coefficient and low thermal conductivity, allowing the thermoelectric conversion rate to be raised dramatically, and affording a silicon-based thermoelectric conversion material composed chiefly of silicon, which is an abundant resource, and which causes extremely little environmental pollution. For example, adding carbon, germanium, or tin to a silicon-based thermoelectric conversion material allows the thermal conductivity to be greatly reduced without changing the carrier concentration in the silicon-based material. A doping amount of 5 to 10 at% is ideal for lowering the thermal conductivity, and if a dopant that is added in order to produce a p- or n-type semiconductor and a group-IV element are deposited at the grain boundary of polycrystalline silicon, the resulting p- or n-type semiconductor will have a carrier concentration of 10 17 to 10 21 (M/m 3 ) and a thermal conductivity of 50 W/m·K or less.
摘要翻译：本发明的目的是提供一种硅基热电转换材料和热电转换元件，可以降低硅基热电转换材料的导热性，而不降低材料的塞贝克系数和导电率，其中使品质因数显着增加。多晶结构包括由富硅相组成的晶粒和在其晶界上沉积至少一种添加元素的添加元素富相，其结果是极大的塞贝克系数和低导热性，使得热电转换率急剧上升，提供主要由硅构成的硅系热电转换材料，其资源丰富，造成极少的环境污染。例如，将碳，锗或锡添加到硅基热电转换材料中，可以在不改变硅基材料中的载流子浓度的情况下大大降低热导率。 5至10at％的掺杂量对于降低热导率是理想的，并且如果为了产生p型或n型半导体而添加的掺杂剂和IV族元素沉积在多晶的晶界处硅，所得的p型或n型半导体的载流子浓度为10 17〜10 21（M / m 3），导热率为50W / m·K以下。

5. 发明公开

EP0969526A1 THERMOELECTRIC ELEMENT 审中-公开
标题翻译：热敏元件
公开(公告)号：EP0969526A1
公开(公告)日：2000-01-05
申请号：EP98961514.1
申请日：1998-12-24
申请人： SUMITOMO SPECIAL METALS COMPANY LIMITED
发明人： YAMASHITA, Osamu , SADATOMI, Nobuhiro
IPC分类号： H01L35/14 , H01L35/32 , H01L35/08 , H01L35/04
CPC分类号： H01L35/32 , H01L35/22
摘要： With the thermo-electric conversion element according to the present invention, the power generating efficiency (in other words, the conversion efficiency) can be improved by inserting as metallic film made of either Ag, Al, or silver soldering material for the PN junction formation between the Si based P type and N type semiconductors and inserting a metallic film made of either Zn, Ni, Cu, Ag, Au, or Cu-30Zn at a connecting portion between the semiconductors and lead wires, so that the electromotive power and the thermo-electromotive force are not cancelled each other due to the Schottky barrier which is generated at the interfacial area between the metals and semiconductors. The desired thermo-electric conversion efficiency can be achieved by the material presented in this invention without any deterioration of the original thermo-electric properties.
摘要翻译：利用根据本发明的热电转换元件，可以通过作为用于PN结形成的由Ag，Al或银焊接材料制成的金属膜插入来提高发电效率（换句话说，转换效率）在Si基P型和N型半导体之间，并且在半导体和引线之间的连接部分插入由Zn，Ni，Cu，Ag，Au或Cu-30Zn制成的金属膜，使得电动势和由于在金属和半导体之间的界面区域产生的肖特基势垒，热电动势不会相互抵消。所需的热电转换效率可以通过本发明中提供的材料实现，而没有原始热电性能的任何劣化。

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