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1. 发明申请

US20040216678A1 Wafer Holder for Semiconductor Manufacturing Equipment and Semiconductor Manufacturing Equipment in Which It Is Installed 审中-公开
标题翻译：半导体制造设备及其安装的半导体制造设备的晶圆座
公开(公告)号：US20040216678A1
公开(公告)日：2004-11-04
申请号：US10709957
申请日：2004-06-09
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Manabu Hashikura
IPC分类号： C23C016/00
CPC分类号： C04B35/581 , C04B2235/3225 , C04B2235/3865 , C04B2235/5409 , C04B2235/5445 , C04B2235/6025 , C04B2235/6584 , C04B2235/723 , C04B2235/725 , C04B2235/728 , C04B2235/963 , C04B2237/366 , C04B2237/403 , H01L21/68735
摘要： Wafer holder for semiconductor manufacturing and semiconductor manufacturing equipment in which the holder is installed, the wafer holder having a wafer-carrying surface, wherein the isothermal rating of its wafer-carrying surface is enhanced. In the wafer holder having a wafer-carrying surface, by making the diameter a of the wafer holder wafer-carrying surface not greater than the diameter b of the surface on its side opposite the wafer-carrying surface, the temperature distribution superficially in a wafer can be brought to within null0.5%. Moreover, by making bnulla null50 nullm, the temperature distribution can be brought to within null0.4%. The wafer holder is preferably a ceramic susceptor.
摘要翻译：用于半导体制造的半导体制造用半导体保持器和保持器安装的半导体制造设备，晶片保持器具有晶片承载表面，其中提供了其晶片承载表面的等温额定值。在具有晶片承载表面的晶片保持器中，通过使晶片保持器晶片承载表面的直径a不大于其与晶片承载表面相对的表面的直径b，表面上的晶片的温度分布可以达到±0.5％以内。此外，通过使b-a> = 50□m，温度分布可以达到±0.4％以内。晶片保持器优选为陶瓷基座。

2. 发明申请

US20030201264A1 CERAMIC SUSCEPTOR 失效
标题翻译：陶瓷制品
公开(公告)号：US20030201264A1
公开(公告)日：2003-10-30
申请号：US10249614
申请日：2003-04-23
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H05B003/68
CPC分类号： H01L21/67103 , H05B3/143 , H05B3/265
摘要： Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within null0.8%, while isothermal rating of the entire surface of the wafer-retaining face is null1.0% or less. Preferable is a superior isothermal rating of null0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within null0.5%.
摘要翻译：其晶片保持面具有优异的等温性能，适用于半导体制造装置和液晶制造装置的陶瓷基座。在板状烧结陶瓷体1中，形成电阻加热元件2。烧结陶瓷体外周边缘1a和电阻加热元件本体外周边缘2a之间的回拉长度L的波动在±0.8％以内，而晶片保持面的整个表面的等温额定值为±1.0％减。优选的等温额定值为±0.5％以下，通过使拉回长度L的波动在±0.5％以内可以实现。

3. 发明申请

US20020000431A1 Ceramic heater for toner-fixing units and method for manufacturing the heater 失效
公开(公告)号：US20020000431A1
公开(公告)日：2002-01-03
申请号：US09834646
申请日：2001-04-16
申请人： Sumitomo Electric Industries, Ltd.
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H05B003/00 , G03G015/20
CPC分类号： G03G15/2064 , G03G15/2053 , G03G15/2057 , G03G2215/2016 , G03G2215/2035 , H05B3/0095
摘要： A ceramic heater that is used in a toner-fixing system comprising a ceramic heater and a heat-resistant film, that reduces the degree of deformation of the heat-resistant film, that lightens the load applied to the film at the time of revolution, that prevents the fracture of the film, and that enables fixing at a high rate exceeding 24 ppm. A ceramic base material 11 of the ceramic heater attached to a heating cylinder comprises aluminum nitride or silicon nitride. A heating element 12 and current-feeding electrodes are made of silver or silver alloy and are formed on the ceramic base material. In the ceramic heater, at least one part of the face (the fixing face) that contacts the heat-resistant film is curved when viewed from a direction perpendicular to the feeding direction of a copying sheet.

4. 发明申请

US20020025409A1 Method of polishing a ceramic substrate 有权
标题翻译：抛光陶瓷基板的方法
公开(公告)号：US20020025409A1
公开(公告)日：2002-02-28
申请号：US09964997
申请日：2001-09-26
申请人： Sumitomo Electric Industries, Ltd.
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Motoyuki Tanaka , Yasuhisa Yushio
IPC分类号： B32B001/00
CPC分类号： B24B29/00 , B24B7/22 , G03G15/2053 , Y10T428/24355 , Y10T428/24413 , Y10T428/2495 , Y10T428/24967 , Y10T428/26 , Y10T428/266 , Y10T428/268
摘要： The circumferential edge portion of a ductile rotating body containing abrasive grains is used to polish the surface of a ceramic substrate. The angle null formed between the polishing direction D0 of the ceramic substrate and the rotating direction D1 of the rotating body is set in the range from 10null to 80null for the polishing step. Alternatively, the polishing process is divided into at least two steps, and the average grain size of abrasive grains is reduced stepwise in the successive steps of the polishing process. According to this method, the surface of a large-area and thin ceramic substrate can be polished without damage, and a smooth polished ceramic surface can be provided. This method is particularly suitable for polishing a ceramic substrate having a thickness of at most 2.0 mm, and the resulting polished ceramic substrate is suitable for a ceramic heater in a thermal fixation device for fixing a toner image.
摘要翻译：含有磨粒的韧性旋转体的圆周边缘部分用于抛光陶瓷基体的表面。在研磨步骤中，将陶瓷基板的研磨方向D0与旋转体的旋转方向D1之间形成的角度θ设定在10°〜80°的范围内。或者，抛光工艺被分为至少两个步骤，并且在抛光过程的连续步骤中磨粒的平均晶粒尺寸逐步降低。根据该方法，可以在不损坏的情况下抛光大面积且薄的陶瓷基板的表面，并且可以提供光滑的抛光陶瓷表面。该方法特别适合于研磨厚度至多为2.0mm的陶瓷基板，所得到的抛光陶瓷基板适用于用于定影调色剂图像的热固定装置中的陶瓷加热器。

5. 发明申请

US20040244695A1 Holder for Use in Semiconductor or Liquid-Crystal Manufacturing Device and Semiconductor or Liquid-Crystal Manufacturing Device in Which the Holder Is Installed 有权
标题翻译：用于半导体或液晶制造装置的支架，以及安装支架的半导体或液晶制造装置
公开(公告)号：US20040244695A1
公开(公告)日：2004-12-09
申请号：US10709889
申请日：2004-06-03
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Manabu Hashikura , Hirohiko Nakata , Akira Kuibira , Masuhiro Natsuhara
IPC分类号： C23C016/00
CPC分类号： H01L21/68757 , C23C16/4581 , C23C16/4586 , H01L21/68785 , H05B3/12 , H05B3/143
摘要： Affords a holder for use in semiconductor or liquid-crystal manufacturing devicesnullas well as semiconductor or liquid-crystal manufacturing devices in which the holder is installednullin which temperature uniformity in the processed-object retaining face is heightened. Configuring the holder with, furnished atop a ceramic susceptor, a composite of a ceramic and a metal improves the temperature uniformity in the holder's processed-object retaining face and makes for curtailing the generation of particulates and other contaminants. In addition, putting a coating on at least the retaining face improves the durability of the holder. Installing a holder of this sort in a semiconductor manufacturing device or a liquid-crystal manufacturing device contributes to making available semiconductor or liquid-crystal manufacturing devices whose productivity and throughput are excellent.
摘要翻译：提供用于半导体或液晶制造装置的保持器以及其中安装保持器的半导体或液晶制造装置，其中加工对象保持面的温度均匀性提高。配置陶瓷基座上的支架，陶瓷和金属的复合材料，可提高保持器的加工对象保持面的温度均匀性，并减少微粒和其他污染物的产生。另外，至少在保持面上涂上涂层，提高了保持体的耐久性。在半导体制造装置或液晶制造装置中安装这样的支架有助于制造生产率和生产率优异的半导体或液晶制造装置。

6. 发明申请

US20040208228A1 TEMPERATURE GAUGE AND CERAMIC SUSCEPTOR IN WHICH IT IS UTILIZED 有权
标题翻译：使用温度计和陶瓷制品
公开(公告)号：US20040208228A1
公开(公告)日：2004-10-21
申请号：US10605519
申请日：2003-10-06
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Manabu Hashikura , Hirohiko Nakata , Masuhiro Natsuhara , Akira Kuibira
IPC分类号： G01K001/00 , G01K007/00
CPC分类号： G01K1/08
摘要： Temperature gauge, and ceramic susceptors and semiconductor manufacturing equipment utilizing the temperature gauge, in which the thermocouple may be easily replaced even if damaged, and in which heat from the temperature-gauging site is readily transmitted to the temperature-gauging contact, shortening time until the measurement temperature stabilizes. A temperature-gauging contact (12) in the tip of the thermocouple contacts, in an exposed-as-it-is state, a temperature-gauging site on a ceramic susceptor (1), and by means of a circular cylindrical-shaped retaining member (11) screwed into female threads in the ceramic susceptor (1) is detachably pressed upon and retained against the ceramic susceptor. Thermocouple lead lines (13), passing through a through-hole (14) in the retaining member (11), stretch from one end face to the other end face thereof. The retaining member may be provided with a flange having threaded holes and screwlocked into female screws in the ceramic susceptor.
摘要翻译：使用温度计的温度计和陶瓷感受体和半导体制造设备，其中热电偶即使损坏也可以容易地更换，并且来自温度测量部位的热量容易传递到温度测量接点，缩短时间直到测量温度稳定。热电偶尖端中的温度测量接点（12）以暴露状态接触陶瓷基座（1）上的温度测量位置，并且通过圆柱形保持螺纹连接在陶瓷基座（1）中的阴螺纹中的构件（11）可拆卸地按压并保持在陶瓷基座上。穿过保持构件（11）中的通孔（14）的热电偶引线（13）从一个端面延伸到另一端面。保持构件可以设置有具有螺纹孔的凸缘并且被螺纹锁定在陶瓷基座中的内螺纹中。

7. 发明申请

US20040188413A1 Ceramic Susceptor and Semiconductor or Liquid-Crystal Manufacturing Apparatus in Which the Susceptor Is Installed 审中-公开
标题翻译：陶瓷受体和其中安装有受体的半导体或液晶制造装置
公开(公告)号：US20040188413A1
公开(公告)日：2004-09-30
申请号：US10708663
申请日：2004-03-18
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Masuhiro Natsuhara , Masaru Furusyo , Hirohiko Nakata
IPC分类号： H05B003/68
CPC分类号： H01L21/67109 , H01L21/67103 , H05B3/143
摘要： Ceramic susceptor having a processed-object retaining facenulland semiconductor as well as liquid-crystal manufacturing apparatuses in which the susceptor is installednullin which temperature uniformity in the surface of an object being processed on the susceptor is enhanced. Forming a resistive heating element in the susceptor surface on other than its processed-object retaining side, or on an internal surface of the susceptor, and forming a lead circuit for supplying electricity to the resistive heating elements in a surface separate from the surface on which the resistive heating element is formed, allows the temperature uniformity of the susceptor to be enhanced and enables uniformization of the temperature distribution in the processed-object retaining face.
摘要翻译：具有加工对象保持面和半导体的陶瓷基座以及其中安装有基座的液晶制造装置，其中在基座上处理的物体的表面的温度均匀性增强。在感受体表面上形成电阻加热元件，而不是在其处理对象保持侧或基座的内表面上形成电阻加热元件，并且形成引线电路，以在与其上表面分开的表面中的电阻加热元件供电形成电阻加热元件，可以提高基座的温度均匀性，并能使加工对象保持面的温度分布均匀化。

8. 发明申请

US20040154543A1 WAFER HOLDER FOR SEMICONDUCTOR MANUFACTURING DEVICE AND SEMICONDUCTOR MANUFACTURING DEVICE IN WHICH IT IS INSTALLED 审中-公开
标题翻译：用于半导体制造装置的散热片和其安装的半导体制造装置
公开(公告)号：US20040154543A1
公开(公告)日：2004-08-12
申请号：US10604065
申请日：2003-06-25
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Manabu Hashikura
IPC分类号： C23C016/00
CPC分类号： C23C16/4586 , C23C16/4581 , H01L21/6833
摘要： Wafer holder for semiconductor manufacturing and semiconductor manufacturing device in which the holder is installed, the wafer holder having a wafer-carrying surface, wherein the isothermal rating of its wafer-carrying surface is enhanced. In the wafer holder having a wafer-carrying surface, by making the spacing of electrodes for supplying power to electrical circuits formed either on a surface other than the wafer-carrying surface of the wafer holder, or else inside it, 10% or more of the wafer holder thickness, the temperature distribution in the wafer-carrying surface can be brought to within nullnull1.0%. The electrical circuits can be heater circuits, electrostatic-chuck electrode circuits, RF electrode circuits, and high-voltage electrode circuits. One or more metals selected from the group being tungsten, molybdenum and tantalum preferably are incorporated into the portion of the power-supply electrodes that is directly connected to the circuits.
摘要翻译：用于半导体制造的半导体制造用半导体保持器和安装有保持器的半导体制造装置，晶片保持器具有晶片承载表面，其中提供了其晶片承载表面的等温额定值。在具有晶片承载表面的晶片保持器中，通过使形成在晶片保持器的晶片承载表面以外的表面上形成的电路的电力间隔，或者在其内部，形成10％以上的晶片保持器厚度，晶片承载表面的温度分布可以达到±1.0％以内。电路可以是加热器电路，静电吸盘电极电路，RF电极电路和高压电极电路。选自钨，钼和钽的一种或多种金属优选并入到直接连接到电路的电源电极的部分中。

9. 发明申请

US20040188321A1 WAFER HOLDER FOR SEMICONDUCTOR MANUFACTURING DEVICE AND SEMICONDUCTOR MANUFACTURING DEVICE IN WHICH IT IS INSTALLED 审中-公开
标题翻译：用于半导体制造装置的散热片和其安装的半导体制造装置
公开(公告)号：US20040188321A1
公开(公告)日：2004-09-30
申请号：US10604514
申请日：2003-07-28
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Manabu Hashikura
IPC分类号： B65D085/00
CPC分类号： H01L21/67103 , H01L21/6831
摘要： Wafer holder and semiconductor manufacturing equipment in which the holder is installed, the wafer holder having a wafer-carrying surface, wherein incidence of warping and cracking when the wafer holder is heated is slight. In the wafer holder having a wafer-carrying surface, electrical circuitry consisting of one or more sinter laminae is formed on the face or in the interior of the wafer holder; and by rendering pores present in the circuitry, the incidence of warping and cracking can be made very slight. The electrical circuitry is preferably any of an electrode circuit for an electrostatic chuck, a resistive-heating-element circuit, an RF-power electrode circuit, and a high-voltage-generating electrode circuit.
摘要翻译：晶片保持器和其中安装有保持器的半导体制造设备，具有晶片承载表面的晶片保持器，其中晶片保持器被加热时的翘曲和开裂的发生率很小。在具有晶片承载表面的晶片保持器中，在晶片保持器的表面或内部形成由一个或多个烧结层组成的电路; 并且通过使电路中存在毛孔，翘曲和开裂的发生率可以非常轻微。电路优选为静电卡盘的电极电路，电阻加热元件电路，RF功率电极电路以及高压发生电极电路中的任一种。

10. 发明申请

US20040178114A1 WAFER HOLDER FOR SEMICONDUCTOR MANUFACTURING DEVICE AND SEMICONDUCTOR MANUFACTURING DEVICE IN WHICH IT IS INSTALLED 审中-公开
标题翻译：用于半导体制造装置的散热片和其安装的半导体制造装置
公开(公告)号：US20040178114A1
公开(公告)日：2004-09-16
申请号：US10604513
申请日：2003-07-28
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Manabu Hashikura
IPC分类号： B65D085/00
CPC分类号： H01L21/6875
摘要： Wafer holder for semiconductor manufacturing and semiconductor manufacturing device in which the holder is installed, the wafer holder having a wafer-carrying surface whose wafer-retaining face has an enhanced isothermal rating. In the wafer holder having a wafer-carrying surface, multiple nubs having a flat portion are formed on the wafer-carrying surface; and by making the surface area of the flats on the nubs 70 mm2 or less per nub, distribution in obverse-surface temperature of a wafer set in place on the wafer holder can be brought within null1.0%. If moreover the per-nub flat surface area is 30 mm2 or less, the temperature can be brought within null0.5%. In addition, the total surface area of the flats on the nubs preferably is 40% or less of the wafer surface area, inasmuch as the incidence of trouble when de-chucking the wafers can be kept under control.
摘要翻译：用于半导体制造的半导体制造用半导体保持器和安装保持器的半导体制造装置，晶片保持器具有晶片承载面，其晶片保持面具有增强的等温等级。在具有晶片承载表面的晶片保持器中，在晶片承载表面上形成具有平坦部分的多个凸块; 并且通过使晶片上的平面的表面积为70mm 2以下，在晶片保持器上设置的晶片的正面温度的分布可以在±1.0％以内。此外，如果每个单位的平面面积为30mm 2以下，则温度可以在±0.5％以内。此外，芯片上的平面的总表面积优选为晶片表面积的40％以下，这是因为可以保持对夹紧晶片的麻烦的发生。

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