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1. 发明公开

EP1754811A4 III GROUP NITRIDE CRYSTAL AND METHOD FOR PREPARATION THEREOF, AND III GROUP NITRIDE CRYSTAL SUBSTRATE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译： III族氮化物晶体及其制造方法和III族氮化物晶体衬底和半导体元件
公开(公告)号：EP1754811A4
公开(公告)日：2009-11-11
申请号：EP05730635
申请日：2005-04-15
申请人： SUMITOMO ELECTRIC INDUSTRIES , SASAKI TAKATOMO
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA FUMIO , NAKAHATA SEIJI , HIROTA RYU
IPC分类号： C30B29/38 , C30B9/00 , C30B9/10 , C30B11/00 , C30B11/06 , C30B29/40 , H01L33/16 , H01L33/32
CPC分类号： C30B29/403 , C30B9/00 , C30B11/00 , H01L33/0075 , H01L33/32

2. 发明申请

WO2004079060A9 METHOD FOR PREPARING BORATE-BASED CRYSTAL AND LASER OSCILLATION APPARATUS 审中-公开
标题翻译：用于制备基于硼酸盐的晶体和激光振荡装置的方法
公开(公告)号：WO2004079060A9
公开(公告)日：2005-06-30
申请号：PCT/JP2004001546
申请日：2004-02-13
申请人： JAPAN SCIENCE & TECH AGENCY , SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , NISHIOKA MUNEYUKI , FUKUMOTO SATORU , MATSUI TOMOYO , SAJI TAKASHI
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , NISHIOKA MUNEYUKI , FUKUMOTO SATORU , MATSUI TOMOYO , SAJI TAKASHI
IPC分类号： C01B35/12 , C30B11/00 , C30B15/00 , C30B29/22
CPC分类号： C30B35/007 , C01B35/12 , C30B11/02 , C30B29/22
摘要： A method for preparing a borate-based crystal which comprises dissolving water-soluble raw materials into water to form an aqueous solution, evaporating the water in the aqueous solution or evaporating the water followed by sintering, to thereby provide a material for raising a crystal, melting the resultant material for raising a crystal, and then growing the borate-based crystal; and a laser oscillation apparatus using a borate-based crystal prepared by the method as an optical element for wavelength conversion. The method allows the preparation of a borate-based crystal being useful as an optical element for wavelength conversion or the like, with a reduced time required for the preparation, at a reduced cost, with ease, with enhanced uniformity in quality and excellent reliability, and the laser oscillation apparatus exhibits enhanced reliability.
摘要翻译：一种制备硼酸盐基晶体的方法，其包括将水溶性原料溶解在水中以形成水溶液，蒸发水中的水或蒸发水，随后烧结，从而提供用于提高晶体的材料，熔化所得材料以提高晶体，然后生长硼酸盐基晶体; 以及使用通过该方法制备的基于硼酸盐的晶体作为用于波长转换的光学元件的激光振荡装置。该方法允许制备硼酸盐基晶体作为波长转换等的光学元件，随着制备时间的缩短，容易地降低成本，提高了质量的均匀性和优异的可靠性，激光振荡装置的可靠性提高。

3. 发明申请

WO2006064882A9 PROCESS FOR PRODUCING BORIC ACID COMPOUND CRYSTAL AND BORIC ACID COMPOUND CRYSTAL PRODUCED BY SAID PROCESS 审中-公开
标题翻译：生产硼酸化合物晶体和硼酸化合物晶体的方法
公开(公告)号：WO2006064882A9
公开(公告)日：2006-10-19
申请号：PCT/JP2005023072
申请日：2005-12-15
申请人： UNIV OSAKA , MORI YUSUKE , SASAKI TAKATOMO , YOSHIMURA MASASHI , SAJI TAKASHI , HISAMINATO NAOTO
发明人： MORI YUSUKE , SASAKI TAKATOMO , YOSHIMURA MASASHI , SAJI TAKASHI , HISAMINATO NAOTO
IPC分类号： C30B29/22 , C30B33/02 , G02F1/355
CPC分类号： C30B29/22 , C30B33/02
摘要： This invention provides a process for producing a boric acid compound crystal that can easily remove a light scattering source. A starting crystal for a boric acid compound is heated from the melting point -140ºC of the starting crystal to the melting point, or the decomposition point -140ºC to the decomposition point, and the temperature is held for a given period of time and is then cooled to remove the light scattering source. Preferably, the heating is carried out, for example, in such a manner that the temperature is raised at a temperature rise rate, which does not cause cracking in the starting crystal, and this heated state is held for 2 hr or longer. The cooling is preferably carried out in such a manner that a temperature zone of at least 650 to 300ºC is rapidly cooled at a cooling rate of 60ºC/min. An example of the crystal obtained by the production process is shown in Fig. 1. As can be seen from the drawing, in the crystal, light scattering is removed, and high quality is realized.
摘要翻译：本发明提供了一种能够容易地除去光散射源的硼酸化合物结晶的制造方法。将硼酸化合物的起始晶体从起始晶体的熔点-140℃加热至熔点或将分解点-140℃加热至分解点，并将温度保持给定的时间段，然后冷却以去除光散射源。优选地，例如以这样的方式进行加热，即以不会引起起始晶体破裂的升温速率升高温度，并将该加热状态保持2小时或更长时间。冷却优选以至少650-300℃的温度区以60℃/分钟的冷却速度快速冷却。通过该制造方法得到的结晶的一个例子如图1所示。从图中可以看出，在结晶中，光散射被除去，实现了高质量。

4. 发明申请

WO2006022302A3 PROCESS FOR PRODUCING ALUMINUM NITRIDE CRYSTAL AND ALUMINUM NITRIDE CRYSTAL OBTAINED THEREBY 审中-公开
标题翻译：生产氮化钠晶体和获得的氮化铝晶体的方法
公开(公告)号：WO2006022302A3
公开(公告)日：2006-04-20
申请号：PCT/JP2005015366
申请日：2005-08-24
申请人： UNIV OSAKA , KANSAI TECH LICENSING ORG CO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA FUMIO , YOSHIMURA MASASHI , KAWAHARA MINORU , ISOBE HIROAKI
发明人： MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA FUMIO , YOSHIMURA MASASHI , KAWAHARA MINORU , ISOBE HIROAKI
IPC分类号： C30B29/38 , C30B9/10
CPC分类号： C30B29/403 , C30B9/00 , C30B9/10
摘要： A process in which an aluminum nitride crystal can be produced under moderate pressure and temperature conditions. There is provided a process for producing an aluminum nitride crystal, comprising forming and growing of an aluminum nitride crystal through reaction, in the presence of a nitrogenous gas, of the nitrogen with aluminum in a flux containing the following components (A) and (B) or in a flux containing the following component (B): (A): element(s) of at least either an alkali metal or an alkaline earth metal group, and (B): at least one element selected from the group consisting of tin (Sn), gallium (Ga), indium (In), bismuth (Bi) and mercury (Hg).
摘要翻译：在中等压力和温度条件下可以生产氮化铝晶体的方法。提供了一种生产氮化铝晶体的方法，其包括在含有以下组分（A）和（B）的助熔剂中，在氮气与氮气的存在下，在氮气的存在下，通过反应形成和生长氮化铝晶体）或含有以下组分（B）的助熔剂中：（A）：碱金属或碱土金属组中的至少一种的元素，和（B）：至少一种选自锡（Sn），镓（Ga），铟（In），铋（Bi）和汞（Hg）。

5. 发明专利

JP2002068891A RARE EARTH-CALCIUM-OXYBORATE-BASED CRYSTAL EXHIBITING REDUCED DETERIORATION WITH LIGHT AND METHOD OF PRODUCING THE SAME 失效
公开(公告)号：JP2002068891A
公开(公告)日：2002-03-08
申请号：JP2000256672
申请日：2000-08-28
申请人： MATSUSHITA ELECTRIC IND CO LTD , SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI
发明人： FURUYA HIROYUKI , SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI
IPC分类号： G02F1/37 , C30B29/22 , G02F1/355 , H01S3/10
摘要： PROBLEM TO BE SOLVED: To provide a rare earth-calcium-oxyborate-based crystal ReCa4O(BO3)3, where, Re is a rare earth element} capable of reducing the occurrence of optical damages caused by irradiation with light having a wavelength of

6. 发明专利

JP2001075135A OPTICAL HIGHER HARMONIC GENERATOR 失效
公开(公告)号：JP2001075135A
公开(公告)日：2001-03-23
申请号：JP24746399
申请日：1999-09-01
申请人： MATSUSHITA ELECTRIC IND CO LTD , SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI
发明人： YAMAZAKI MASATAKA , SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI
IPC分类号： G02F1/37 , G02F1/355
摘要： PROBLEM TO BE SOLVED: To decrease the quantity of nonlinear optical media and to provide an inexpensive higher harmonic light source by executing the generation of second higher harmonic and third higher harmonic on the same straight line in an optical higher harmonic generator. SOLUTION: An optical resonator is composed of a reflection mirror 1 which totally reflects basic frequency light and a first prism surface 7 which reflects the basic frequency light. A nonlinear optical element 5 which generates the second higher harmonic and third higher harmonic is arranged in the resonator. A phase retarder prism 6 having the first prism surface 7 has a second prism surface 8 having a function equal to the function of a quarter-wave plate to the second higher harmonic light and a third prism surface 9 which is the total reflection to the second higher harmonic light and rotates the prism 6, thereby adjusting the polarization direction and enabling the phase matching on the same straight line. As a result, the second higher harmonic and third higher harmonic can be generated on the same straight line and the number of the nonlinear optical media can be decreased.

7. 发明专利

JP2000271764A TREATMENT OF OPTICAL ELEMENT SURFACE BY ION BEAM ETCHING 失效
公开(公告)号：JP2000271764A
公开(公告)日：2000-10-03
申请号：JP8730699
申请日：1999-03-29
申请人： JAPAN SCIENCE & TECH CORP , KOGAKU GIKEN KK , SASAKI TAKATOMO , MORI YUSUKE
发明人： SASAKI TAKATOMO , MORI YUSUKE , TANAKA MITSUHIRO
IPC分类号： B23K15/00 , G02B1/02 , G02B1/12 , G02F1/35 , G02F1/355
摘要： PROBLEM TO BE SOLVED: To suppress damage of a crystal optical element due to laser irradiation and to improve the laser resistance and life elongation of the element surface by irradiating the surface of a mechanically ground crystal optical element with ion beams and removing the surface layer containing residual abrasive grain. SOLUTION: Preferably, the crystal optical element is a nonlinear optical crystal and also the crystal optical element is quartz or inorganic fluoride. The crystal optical element having a ground surface is in the state that granular substance such as ZrO2 or CeO2 as abrasive grains sticks to the surface or is embedded inside the crystal. The surface of the crystal optical element is irradiated with ion beams, the surface layer of the crystal into which abrasive grains stick or are embedded is etched, and abrasive grain substance thereof is removed. Since the flatness and cleanliness of the crystal surface are secured in ion beam etching, high laser resistance and life elongation of the optical element are attained, and the optical element having high reliability is obtained. With respect to the ion beams, an inert gas such as Ar is used as sputtering ions in a vacuum chamber.

8. 发明专利

JPH06132595A SECONDARY HIGHER HARMONIC LIGHT EMITTER 失效
公开(公告)号：JPH06132595A
公开(公告)日：1994-05-13
申请号：JP27899792
申请日：1992-10-16
申请人： SASAKI TAKATOMO , MITSUBISHI CABLE IND LTD
发明人： SASAKI TAKATOMO
IPC分类号： G02F1/37 , H01S3/08 , H01S3/109
摘要： PURPOSE:To provide a secondary higher harmonic light emitter capable of being manufactured in a simple structure at low cost as well as emitting green or blue colored light. CONSTITUTION:The title secondary higher harmonic light emitter is provided with a beam source 1 formed of a mirror structure 2 on one end surface and a nonreflective structure 3 on the opposite surface, a domain inversion structure 5 comprising nonlinear optical material as well as a member 4 formed of a mirror structure 6 on an optical oscillation surface and another nonreflective structure 10 on the opposite surface. In such a constitution, a resonator structure 7 is formed between the mirror structures 2 and 6 respectively comprising the beam source 1 and the member 4 while it is recommended that the beam source 1 is to be a semiconductor laser or/and a semiconductor laser excited solid state laser. Through these procedures, this beam emitter can be miniaturized by reducing the number of components thereby enabling the title secondary higher harmonic emitter capable of emitting green or blue colored beams to be manufactured at low cost.

9. 发明专利

JP2002068896A METHOD AND DEVICE FOR PRODUCING NITRIDE SINGLE CRYSTAL 失效
公开(公告)号：JP2002068896A
公开(公告)日：2002-03-08
申请号：JP2000261669
申请日：2000-08-30
申请人： KOBE STEEL LTD , SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI
发明人： UEHARA KAZUHIRO , SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI
IPC分类号： C30B29/38 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a production method for obtaining a bulky nitride single crystal, in which it is possible to control the generation of a nucleus and by which the nitride single crystal having a high quality and a large size can be obtained at a relatively low temperature and low pressure. SOLUTION: A seed crystal is placed in a raw material for growing the nitride single crystal and then a crystal is grown by locally heating the seed crystal. Especially, it is preferable that crystal growth is carried out in such a manner that the seed crystal is locally heated while maintaining the temperature of the raw material for growing the nitride single crystal at a temperature at which the crystal hardly grows so that the temperature of the raw material present in the vicinity of the seed crystal is maintained at a high temperature at which the crystal can grow.

10. 发明专利

JP2000029084A WAVELENGTH CONVERSION CRYSTAL 失效
公开(公告)号：JP2000029084A
公开(公告)日：2000-01-28
申请号：JP11006499
申请日：1999-04-16
申请人： SASAKI TAKATOMO , MORI YUSUKE
发明人： SASAKI TAKATOMO , MORI YUSUKE
IPC分类号： G02F1/37 , G02F1/35 , G02F1/355
摘要： PROBLEM TO BE SOLVED: To provide a wavelength conversion crystal for generation of vacuum UV rays of a short absorption edge, etc. SOLUTION: This wavelength conversion crystal has the BeO3 structure as the crystal basic structure having a nonlinear optical characteristic and consists mainly of crystals of Rb2Be2Si2O7, RbNa5Be8O11, SrBe3O4 or Na6Be8O11.

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