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1. 发明专利

DE69008140T2 未知
公开(公告)号：DE69008140T2
公开(公告)日：1994-08-25
申请号：DE69008140
申请日：1990-12-07
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： KAWAI CHIHIRO , IGARASHI TADASHI
IPC分类号： C04B35/56 , C04B35/565 , C04B35/58 , C04B35/584 , C04B35/80 , C04B35/83 , C04B41/52 , C04B41/89 , C04B41/87
摘要： A coated carbon fiber-reinforced composite material comprising a substrate material which comprises a carbon or ceramic matrix and reinforcing carbon fibers and a coating layer which comprises silicon carbide and at least one material selected from the group consisting of titanium carbide, zirconium carbide and hafnium, wherein a part of the coating layer contacting to the substrate consists of at least one material selected from the group consisting of titanium carbide, zirconium carbide and hafnium carbide, a surface part of the coating layer consists of silicon carbide and a composition in an intermediate part between the part contacting to the substrate and the surface part continuously or stepwise changes from at least one material selected from the group consisting of titanium carbide, zirconium carbide and hafnium carbide to silicon carbide, and a carbon fiber-reinforced composite material comprising a matrix which comprises carbon and oxidation resistant ceramic and reinforcing carbon fiber contained in the matrix and optionally a coating layer which comprises hafnium carbide, wherein both surface parts of the matrix consists of the oxidation resistant ceramic, a center part of the matrix consists of carbon and a composition in each of intermediate parts between each surface and the center part continuously or stepwise changes from the oxidation resistant ceramic to carbon, which have improved oxidation resistance and thermal shock resistance.

2. 发明专利

DE69008140D1 未知
公开(公告)号：DE69008140D1
公开(公告)日：1994-05-19
申请号：DE69008140
申请日：1990-12-07
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： KAWAI CHIHIRO , IGARASHI TADASHI
IPC分类号： C04B35/56 , C04B35/565 , C04B35/58 , C04B35/584 , C04B35/80 , C04B35/83 , C04B41/52 , C04B41/89 , C04B41/87
摘要： A coated carbon fiber-reinforced composite material comprising a substrate material which comprises a carbon or ceramic matrix and reinforcing carbon fibers and a coating layer which comprises silicon carbide and at least one material selected from the group consisting of titanium carbide, zirconium carbide and hafnium, wherein a part of the coating layer contacting to the substrate consists of at least one material selected from the group consisting of titanium carbide, zirconium carbide and hafnium carbide, a surface part of the coating layer consists of silicon carbide and a composition in an intermediate part between the part contacting to the substrate and the surface part continuously or stepwise changes from at least one material selected from the group consisting of titanium carbide, zirconium carbide and hafnium carbide to silicon carbide, and a carbon fiber-reinforced composite material comprising a matrix which comprises carbon and oxidation resistant ceramic and reinforcing carbon fiber contained in the matrix and optionally a coating layer which comprises hafnium carbide, wherein both surface parts of the matrix consists of the oxidation resistant ceramic, a center part of the matrix consists of carbon and a composition in each of intermediate parts between each surface and the center part continuously or stepwise changes from the oxidation resistant ceramic to carbon, which have improved oxidation resistance and thermal shock resistance.

3. 发明专利

JPH03153584A COATED CARBON FIBER REINFORCED COMPOSITE MATERIAL 失效
公开(公告)号：JPH03153584A
公开(公告)日：1991-07-01
申请号：JP29368789
申请日：1989-11-10
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： KAWAI CHIHIRO , IGARASHI TADASHI
IPC分类号： C04B41/87 , C04B35/80 , C04B41/50
摘要： PURPOSE:To provide the composite material which obviates the generation of thermal cracks in a ceramics coating layer and has excellent oxidation resistance by forming the matrix of a base material of the carbide, nitride or carbonitride of specific elements. CONSTITUTION:This coated carbon fiber reinforced composite material has the base material formed by incorporating carbon fibers as a reinforcing material into the matrix consisting of >=1 kinds of the carbide, nitride or carbonitride of group 4A, 5A, 6A elements, silicon or boron and the coating layer of silicon carbide or silicon nitride formed on the surface of the base material. The coefft. of thermal expansion of the base material of this composite material is approximate to the coefft. of thermal expansion of the coating layer. Since the generation of thermal stresses in the coating layer on the base material is thereby obviated, the generation of the thermal cracks in the coating layer is prevented and the coated carbon fiber reinforced composite material having the excellent strength and oxidation resistance in combination is provided.

4. 发明专利

JPH03122055A SINTERED SILICON NITRIDE HAVING EXCELLENT HIGH-TEMPERATURE STRENGTH 失效
公开(公告)号：JPH03122055A
公开(公告)日：1991-05-24
申请号：JP25867189
申请日：1989-10-05
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： AWAZU TOMOYUKI , TAKEUCHI HISAO , IGARASHI TADASHI
IPC分类号： C04B35/584 , C04B35/58
摘要： PURPOSE:To obtain a sintered Si3N4 having excellent high-temperature strength and containing grain boundary consisting of a mixed phase having a specific composition by using a specific amount of an assistant composed of Y2O3 and Al2O3 in the production of an Si3N4 sintered material, heat-treating the sintered product and completely crystallizing the glassy phase of the grain boundary. CONSTITUTION:The amounts of Y2O3 and Al2O3 used as assistants are determined in such a manner as to obtain a grain boundary phase having a composition falling on a straight line binding the Y2O3.2SiO2 crystal phase and the 3Y2O3.5Al2O3 crystal phase in the diagram. The determined amounts of Y2O3 and Al2O3 are added to Si3N4 raw material and the mixture is preformed and sintered in nitrogen gas. The sintered product is heat-treated to completely crystallize the grassy phase of the grain boundary and from a grain boundary composed of a mixture of the Y2O3.2SiO2 crystal phase and the 3Y2O3.5Al2O3 crystal phase. A sintered silicon nitride having excellent high-temperature strength and usable as various mechanical structural parts can be produced by this process.

5. 发明专利

JPH02225677A FILM FORMATION 失效
公开(公告)号：JPH02225677A
公开(公告)日：1990-09-07
申请号：JP24634389
申请日：1989-09-25
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： AIHARA TOMOYASU , KAWAI CHIHIRO , IGARASHI TADASHI
IPC分类号： C23C16/00 , C23C24/00 , C23C26/00
摘要： PURPOSE:To obtain a film in which respective contents of powder and pore are changed continuously or by stages at high speed into a large area by introducing a powder into a reaction vessel to deposit the powder onto the surface of a base material and simultaneously forming a film on the above surface by means of chemical vapor growth. CONSTITUTION:In the course of film formation by a chemical vapor growth method, a powder having a composition or crystalline structure (including amorphous one) similar or dissimilar to that of a film is introduced. The above powder is deposited on the surface of a base material, and simultaneously, the film is formed on the above surface by means of chemical vapor growth. The composition, porosity, and structure of the film can be easily controlled by controlling the composition, crystalline structure, magnetic properties, grain size, shape, and quantity of the powder to be supplied or the composition, quantity, etc., of gaseous raw material. By this method, the uniform film having gradient function or network structure can be obtained at high speed. This film can be used for insulator electric conductor, heat insulator, catalyst support, heat sink, etc.

6. 发明专利

JPS643826B2 失效
公开(公告)号：JPS643826B2
公开(公告)日：1989-01-23
申请号：JP5331884
申请日：1984-03-19
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： HARA AKIO , IGARASHI TADASHI , SHIBATA KENICHIRO , KUME MASAHIRO
IPC分类号： C04B35/00 , G02F1/03 , G02F1/05

7. 发明专利

JPS6365740B2 失效
公开(公告)号：JPS6365740B2
公开(公告)日：1988-12-16
申请号：JP11721178
申请日：1978-09-21
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： KODAMA JUJIRO , AMANO YOSHINARI , IGARASHI TADASHI
IPC分类号： C22C5/10 , C22C5/06 , H01H1/02 , H01H1/023 , H01H11/04

8. 发明专利

JPS63305543A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63305543A
公开(公告)日：1988-12-13
申请号：JP13989487
申请日：1987-06-05
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： MAEDA TAKAO , YAMANAKA SEISAKU , IGARASHI TADASHI
IPC分类号： H01L23/50 , H01L21/60 , H01L23/12 , H01L23/52
摘要： PURPOSE:To obtain a semiconductor device capable of coping with the increase of density and pins and having excellent productivity by mounting a semiconductor element housed in a recessed section in an insulating substrate with an outer lead, an insulating supporter covering the surface of the insulating substrate and a plurality of conductor wirings. CONSTITUTION:Each electrode pad section 10 for semiconductor elements 5 is joined collectively with bump sections 11 at one ends of each conductor wiring 8 supported by an insulating supporter 9 at a time, the semiconductor elements 5 are housed into recessed sections 7 in the surface of a substrate as the semiconductor elements 5 are left as they are, and the other ends of the conductor wirings 8 are connected respectively to viaholes 2 on corresponding outer leads 4. Since the conductor wirings 8 are extended onto the semiconductor elements 5 and connected to electrodes, excess space can be omitted in the peripheries of the semiconductor elements 5, the electrodes can be disposed to sections near the centers if the surface of the semiconductor elements 5, and packaging density can further be increased. One ends of all conductor wirings 8 and all electrodes for the semiconductor elements 5 can be connected collectively at a time. Accordingly, productivity is improved, and a semiconductor device can be acquired at low cost.

9. 发明专利

JPS63271960A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63271960A
公开(公告)日：1988-11-09
申请号：JP10519987
申请日：1987-04-28
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： MAEDA TAKAO , YAMANAKA SEISAKU , IGARASHI TADASHI
IPC分类号： H01L23/28
摘要： PURPOSE:To prevent such erroneous operations as cross talk by a method wherein an insulating layer wherein a coverage is provided on a wiring layer containing a plurality of leads formed on an insulating substrate, and a conducting layer formed on the insulating layer and to be connected to the ground potential, are provided. CONSTITUTION:A conducting layer 15 is provided through the intermediary of an insulating layer 14 on a wiring layer 8 formed on an insulating substrate 1, and the conducting layer 15 is set at the ground potential. The conducting layer 15 is so formed as to cover all the lines 8' of the wiring layer 8, and the gaps between the lines 8' are filled up with an insulating layer of high permittivity. As the results, the coupling force is relatively weakened between the leads 8' and fluctuation in potential attributable to adjacent lines 8' may be reduced. Such erroneous operations as cross talk is reduced in a device with its wirings highly integrated.

10. 发明专利

JPS63261862A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63261862A
公开(公告)日：1988-10-28
申请号：JP9677087
申请日：1987-04-20
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： MAEDA TAKAO , YAMANAKA SEISAKU , IGARASHI TADASHI
IPC分类号： H01L23/12 , H01L23/52
摘要： PURPOSE:To make it possible to adjust freely the width and spacing of wiring while an insulating substrate such as ceramics is used, by providing at least two thin film wiring layers formed by lamination on a wiring layer formation region, and an intermediate thin film insulating layer formed thinly between each thin film wiring layer. CONSTITUTION:Metal pins 12 are inserted into each through-hole of a sintered ceramics substrate 10 of Al2O3 with holes, and fixed with glass filled in gaps to the through holes. On the substrate surface, a first wiring layer 4 of Al is formed, and connected to the prescribed metal pins 12. On the whole surface thereon, an intermediate insulating layer 11 of Al2O3 is deposited by a PVD method. Further thereon, a second wiring layer 5 of Al is formed and connected to the prescribed metal pins 12. After a semiconductor element 7 is mounted at a prescribed position, each electrode of the semiconductor element 7, and the first wiring layer 4 and the second wiring layer 5 are connected in order with lower stage bonding wires 8 and upper stage bonding wires 9. Thereby, high density mounting is enabled, while the width and spacing of wiring are freely adjusted.

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