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1. 发明申请

WO2013019993A1 DOPANT INJECTION LAYERS 审中-公开
标题翻译：呕吐物注射层
公开(公告)号：WO2013019993A1
公开(公告)日：2013-02-07
申请号：PCT/US2012/049397
申请日：2012-08-02
申请人： SUMITOMO CHEMICAL CO., LTD. , MACKENZIE, John, Devin , JONES, Eric , NAKAZAWA, Yuko
发明人： MACKENZIE, John, Devin , JONES, Eric , NAKAZAWA, Yuko
IPC分类号： H01L51/50
CPC分类号： H01L51/5088 , H01L51/5032
摘要： The present invention uses an isopotential source layer for an electronic device, wherein the source layer provides ions of charge to be preferentially injected into an active layer of the electronic device, such that a charge of the injected ions has the same sign as the sign of a relative bias applied to the isopotential source layer. The source layer may comprise a composite ionic dopant injection layer having at least one component that has a relatively high diffusivity for ions. The composite ionic dopant injection layer may comprise metallic conductive particles and an ion supporting matrix. The composite ionic dopant injection layer may also comprise a continuous metallic conductive network and an ion supporting matrix. The metallic network comprises metallic nanowires or conductive nanotubes. The ion supporting matrix may comprise a conductive polymer.
摘要翻译：本发明使用用于电子器件的等电位源层，其中源层提供电荷离子以优先注入到电子器件的有源层中，使得注入离子的电荷具有与符号相同的符号施加到等电位源层的相对偏置。源层可以包括复合离子掺杂剂注入层，其具有至少一个对于离子具有相对较高扩散率的组分。复合离子掺杂剂注入层可以包括金属导电颗粒和离子支持基质。复合离子掺杂剂注入层还可以包括连续金属导电网络和离子支持基质。金属网络包括金属纳米线或导电纳米管。离子支持基质可以包含导电聚合物。

2. 发明申请

WO2010141519A1 ENCAPSULATION PROCESS AND STRUCTURE FOR ELECTRONIC DEVICES 审中-公开
标题翻译：电子设备的封装过程和结构
公开(公告)号：WO2010141519A1
公开(公告)日：2010-12-09
申请号：PCT/US2010/036972
申请日：2010-06-01
申请人： ADD-VISION, INC. , MACKENZIE, John, Devin , JONES, Eric , NAKAZAWA, Yuko
发明人： MACKENZIE, John, Devin , JONES, Eric , NAKAZAWA, Yuko
IPC分类号： H01L21/56
CPC分类号： H01L51/5259 , H01L23/26 , H01L51/5246 , H01L2924/0002 , Y10T29/41 , Y10T29/49002 , Y10T29/49117 , Y10T29/49146 , H01L2924/00
摘要： Electronic devices, such as photovoltaic, transistor or doped light-emitting devices, can be manufactured with an air-based manufacturing process and device structure that encapsulates the device with air-stable electrodes and active layers that are reasonably stable in their unexcited state. A sheet of flexible material may act as a substrate and a second sheet of material acts as a cover. Getter materials are included in the encapsulated device, with the getter latent or unreactive during the manufacturing process.
摘要翻译：电子器件，如光伏，晶体管或掺杂的发光器件，可以用空气制造工艺和器件结构来制造，该器件结构使空气稳定的电极和活性层在其未激活状态下相当稳定。一片柔性材料可以用作基底，第二片材料用作盖子。吸气剂材料包括在封装的装置中，吸收剂在制造过程中潜在或不活跃。

3. 发明公开

EP2438610A1 ENCAPSULATION PROCESS AND STRUCTURE FOR ELECTRONIC DEVICES 审中-公开
标题翻译：封装和结构，电子器件
公开(公告)号：EP2438610A1
公开(公告)日：2012-04-11
申请号：EP10783966.4
申请日：2010-06-01
申请人： Sumitomo Chemical Co., Ltd
发明人： MACKENZIE, John, Devin , JONES, Eric , NAKAZAWA, Yuko
IPC分类号： H01L21/56
CPC分类号： H01L51/5259 , H01L23/26 , H01L51/5246 , H01L2924/0002 , Y10T29/41 , Y10T29/49002 , Y10T29/49117 , Y10T29/49146 , H01L2924/00
摘要： Electronic devices, such as photovoltaic, transistor or doped light-emitting devices, can be manufactured with an air-based manufacturing process and device structure that encapsulates the device with air-stable electrodes and active layers that are reasonably stable in their unexcited state. A sheet of flexible material may act as a substrate and a second sheet of material acts as a cover. Getter materials are included in the encapsulated device, with the getter latent or unreactive during the manufacturing process.

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