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    • 10. 发明专利
    • PHOTORESIST COMPOSITION
    • JPS63161443A
    • 1988-07-05
    • JP31045386
    • 1986-12-24
    • SUMITOMO CHEMICAL CO
    • KOKUBO TOSHIYUKIKAMIMURA YUKIKAZUFURUTA AKIHIRO
    • G03C1/00G03F7/004G03F7/09
    • PURPOSE:To obtain a photoresist compsn. maintaining sensitivity and giving a fine pattern on a highly reflective substrate with high dimensional controllability independently of a change in prebaking conditions by adding a light absorbing agent selected among specified azo compds. to a photoresist. CONSTITUTION:At least one kind of light absorbing agent selected among azo compds. represented by the formula (where each of X and Y is H atom, alkyl, nitro or -COOCH3 group and Z is H atom or phenyl group) is added to a photoresist by 0.1-20wt.%, preferably 0.5-10wt.% of the amt. of the resulting photoresist compsn. The photoresist as the base of the photoresist compsn. may be a rubber-based photoresist contg. cyclized rubber and bisazide as principal components or a positive type photoresist contg. novolak resin obtd. by the addition condensation of phenol with formaldehyde and at least one kind of o-quinonediazido compd. The photoresist compsn. gives a resist pattern having high dimensional accuracy and high sensitivity on a highly reflective substrate of aluminum, polysilicon or the like independently of a change in baking conditions without causing halation.