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1. 发明公开

EP1883104A1 Method for manufacturing bonded SOI wafer and bonded SOI wafer manufactured thereby 有权
标题翻译： Verfahren zur Herstellung eines gebundenen SOI-Wafers
公开(公告)号：EP1883104A1
公开(公告)日：2008-01-30
申请号：EP07014401.9
申请日：2007-07-23
申请人： SUMCO Corporation
发明人： Ikeda, Yasunobu , Tomita, Shinichi , Miyahara, Hiroyuki
IPC分类号： H01L21/322 , H01L21/762
CPC分类号： H01L21/02052 , H01L21/3226 , H01L21/76256
摘要： A bonded SOI wafer is manufactured by performing bonding in a state where organics exist on a surface of an active layer wafer and/or on a surface of a supporting wafer and performing heat-treating for bonding reinforcement in a state where the organics are trapped at an interface between the active layer wafer and the supporting wafer to form crystal defects at an interface between the active layer wafer and the oxide film and/or at an interface between the supporting wafer and the oxide film. This allows a simple and inexpensive gettering source to be formed at the interface between an SOI layer and an insulating layer (oxide film). Also, the bonded SOI wafer of the present invention that is manufactured by this method can effectively remove heavy-metal impurities that may have a negative impact on the characteristics of the device and/or the withstand voltage characteristics of the oxide film. Therefore, the manufacturing method and the bonded SOI wafer according to the present invention can be utilized widely as an SOI wafer with improved device characteristics or as a manufacturing method thereof.
摘要翻译：通过在有源层晶片的表面和/或支撑晶片的表面上存在有机物的状态下进行结合，并且在有机物被捕获的状态下进行接合强化的热处理来制造接合的SOI晶片活性层晶片和支撑晶片之间的界面，以在有源层晶片和氧化物膜之间的界面处和/或在支撑晶片和氧化物膜之间的界面处形成晶体缺陷。这允许在SOI层和绝缘层（氧化物膜）之间的界面处形成简单且廉价的吸气源。此外，通过该方法制造的本发明的接合SOI晶片可以有效地去除可能对器件特性和/或耐电压特性产生负面影响的重金属杂质。因此，根据本发明的制造方法和接合SOI晶片可以广泛地用作具有改进的器件特性的SOI晶片或其制造方法。

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