专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP1615261A1 SEMICONDUCTOR WAFER HEAT TREATING JIG 有权
标题翻译： HALBLEITERWAFERWÄRMEBEHANDLUNGS-EINSPANNVORRICHTUNG
公开(公告)号：EP1615261A1
公开(公告)日：2006-01-11
申请号：EP04720720.4
申请日：2004-03-15
申请人： Sumco Corporation
发明人： ADACHI, Naoshi, Sumitomo Corporation
IPC分类号： H01L21/324 , H01L21/22 , H01L21/68
CPC分类号： H01L21/67306 , H01L21/67103 , H01L21/67309 , H01L21/68735 , H01L21/6875 , H01L21/68757
摘要： A heat treatment jig by the invention comprising: the diameter of a disk-type structure being 60% or more of that of loaded semiconductor wafers; the thickness being 1.0 mm or more but 10 mm or less; the surface roughness Ra of 0.1 µm or more but 100 µm or less at a contacting surface with the wafers; and the surface planarity being specifically controlled in the concentric direction as well as in the diametrical direction, otherwise in place of above planarity, comprising a controlled maximum height in such a way that the maximum height is obtained by the flatness measurement at the multiple positions and the difference between said maximum height and the hypothetical-average-height-plane thus set is 50 µm or less, can reduce the slip generation due to the close adhesion of the wafers and the jig. Owing to this, even if the wafers having large tare weight should be heat-treated, the slip generation can be effectively prevented, thus enabling the jig to be widely used as the reliable heat treatment jig for semiconductor substrates.
摘要翻译：本发明的热处理夹具包括：盘型结构的直径为装载的半导体晶片的直径的60％以上; 厚度为1.0mm以上且10mm以下; 在与晶片的接触面处的表面粗糙度Ra为0.1μm以上且100μm以下; 并且表面平面度被特别地在同心方向以及直径方向上被控制，否则代替上述平面度，包括受控的最大高度，使得最大高度通过在多个位置处的平坦度测量获得，并且所述最大高度与如此设定的假想平均高度平面之间的差为50μm以下，能够减少由于晶片和夹具的紧密附着而产生的滑移。因此，即使重量大的晶片，

IPRDB

热门服务

关于我们

友情链接

联系方式