专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP1366203A4 REFRACTORY METAL PLATES WITH UNIFORM TEXTURE AND METHODS OF MAKING THE SAME 无效
标题翻译：具有质地均匀和过程薄壁难熔金属用于生产
公开(公告)号：EP1366203A4
公开(公告)日：2004-07-28
申请号：EP02726582
申请日：2002-02-20
申请人： STARCK H C INC , JEPSON PETER R , UHLENHUT HENNING , KUMAR PRABHAT
发明人： JEPSON PETER R , UHLENHUT HENNING , KUMAR PRABHAT
IPC分类号： C22C27/02 , C22F1/00 , C22F1/18 , C23C14/34
CPC分类号： C23C14/3414 , C22C27/02 , C22F1/18
摘要： A method (10) of forming sputtering target from ingots of tantalum or niobium of requisite purity by the process of cutting the ingot to short lengths (12) and pressure working (14, 22, 30, 34) the ingot along alternating essentially orthogonal work axes. Intermediate anneals (18, 26, 38) are applied as necessary to establish a uniform texture thickness-wise and area-wide throughout the target, including the center. The uniform texture is a substantially constant mix of grains with orientation (100) and (111), thereby improving sputtering performance by providing a more predictable sputter rate to control film thickness.

2. 发明公开

EP1200218A4 LOW OXYGEN REFRACTORY METAL POWDER FOR POWDER METALLURGY 有权
标题翻译：含氧量少FOR USE粉末冶金耐火粉料
公开(公告)号：EP1200218A4
公开(公告)日：2004-04-14
申请号：EP00959289
申请日：2000-08-18
申请人： STARCK H C INC
发明人： KUMAR PRABHAT
IPC分类号： B22F1/00 , B22F3/16 , B22F9/02 , B22F9/20 , B22F9/22 , C22B9/14 , C22B34/24 , C22C1/04 , C22C32/00 , H01G9/042 , H01G9/052
CPC分类号： H01G9/042 , B22F1/0088 , B22F3/162 , B22F9/023 , B22F2003/208 , B22F2998/00 , B22F2998/10 , B22F2999/00 , C22B9/14 , C22B34/24 , C22C1/045 , C22C32/0031 , H01G9/0525 , B22F3/04 , B22F3/1208 , B22F3/20 , B22F3/16 , B22F3/10 , B22F3/15 , B22F3/1007 , B22F2201/20
摘要： Process for producing formed Ta/Nb powder metallurgy products using Ta and/or Nb hydride powders with an oxygen content greater than a target level, e.g., 300 ppm, heating the metal hydride in the presence of another metal having a higher affinity for oxygen, removing the other metal and any reaction byproducts, to form a metal powder with an oxygen content less than the target level and forming a metallurgical product from said oxygen reduced Ta/Nb powder with an oxygen content less than the target level.

3. 发明公开

EP2220264A4 REFRACTORY METAL-DOPED SPUTTERING TARGETS 审中-公开
标题翻译：顽固性的掺杂金属溅射靶材
公开(公告)号：EP2220264A4
公开(公告)日：2010-12-01
申请号：EP08841376
申请日：2008-10-24
申请人： STARCK H C INC
发明人： SUN SHUWEI , GAYDOS MARK , WU RICHARD , KUMAR PRABHAT
IPC分类号： C23C14/00 , G11B5/127
CPC分类号： C23C14/3414 , C22C1/002 , C22C1/0425 , C22F1/08 , C23C14/14 , H01B1/02 , H01B1/026 , Y10T428/31678

4. 发明公开

EP1362132A4 REJUVENATION OF REFRACTORY METAL PRODUCTS 有权
标题翻译：治疗METALS含耐火制品
公开(公告)号：EP1362132A4
公开(公告)日：2004-07-28
申请号：EP02718966
申请日：2002-02-14
申请人： STARCK H C INC
发明人： AIMONE PAUL , KUMAR PRABHAT , JEPSON PETER R , UHLENHUT HENNING , GOLDBERG HOWARD V
IPC分类号： C23C14/34 , B22F3/24 , B22F7/06 , B23F7/00 , H01L21/285
CPC分类号： H01J37/3491 , B22F7/062 , B22F2007/068 , B22F2999/00 , C23C14/3414 , Y02P10/295 , B22F3/1055
摘要： Refractory metal products (12), such as tantalum on non-refractory conductive metal backings (14), e.g. copper, can be rejuvenated after metal consumption in selected zones by powder filling (28) the zones (18) and high energy heating (30) at high scan speed to sinter the added powder, without complete melting of the powder fill, thus establishing a microstructure consistent with the balance of the reclaimed product and avoiding the separation of the copper backing (14) and tantalum sputter plate (12). The rejuvenation method can be applied to non-mounted refractory metal products that are subject to non-uniform erosion, etching, chipping or other metal loss. The form of such refractory metal products can be as plate, rod, cylinder, block or other forms apart from sputter targets. The process can be applied to, for example, x-ray disks or targets (molybdenum plate on carbon backing).

5. 发明申请

WO2006026621A3 MOLYBDENUM TUBULAR SPUTTERING TARGETS WITH UNIFORM GRAIN SIZE AND TEXTURE 审中-公开
标题翻译：具有均匀颗粒尺寸和纹理的莫氏管喷雾目标
公开(公告)号：WO2006026621A3
公开(公告)日：2006-07-13
申请号：PCT/US2005030852
申请日：2005-08-29
申请人： STARCK H C INC , LEMON BRAD , HIRT JOSEPH , WELLING TIMOTHY , DAILY JAMES G III , MEENDERING DAVID , ROZAK GARY , O'GRADY JERONE , JEPSON PETER R , KUMAR PRABHAT , MILLER STEVEN A , WU RONG-CHEIN RICHARD , SCHWARZ DAVD G
发明人： LEMON BRAD , HIRT JOSEPH , WELLING TIMOTHY , DAILY JAMES G III , MEENDERING DAVID , ROZAK GARY , O'GRADY JERONE , JEPSON PETER R , KUMAR PRABHAT , MILLER STEVEN A , WU RONG-CHEIN RICHARD , SCHWARZ DAVD G
IPC分类号： C22C27/04 , B22F3/14 , C23C14/34
CPC分类号： C23C14/3414 , B22F1/0003 , B22F3/16 , B22F3/162 , B22F3/24 , B22F5/006 , B22F2003/248 , B22F2301/20 , B22F2998/00 , B22F2998/10 , C21D8/0221 , C21D8/0247 , C22C1/045 , C22C27/04 , C22F1/18 , C23C14/14 , C23C14/3478 , C23C14/3485 , C23C14/35 , C23C14/46 , B22F3/172 , B22F3/20 , B22F3/04 , B22F3/10
摘要： Molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m X 5.5 m. The thin films can be used in electronic components such as Thin Film Transistor - Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emission Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
摘要翻译：钼，溅射靶和烧结表征为没有或最小纹理条纹或通过厚度梯度。具有精细，均匀的晶粒尺寸以及均匀质地的钼溅射靶是高纯度的，并且可以微合金化以改善性能。溅射靶可以是圆盘，正方形，矩形或管状，并且可以溅射以在基底上形成薄膜。通过使用段形成方法，溅射靶的尺寸可以达到6m×5.5μm。薄膜可以用于薄膜晶体管 - 液晶显示器，等离子体显示面板，有机发光二极管，无机发光二极管显示器，场发射显示器，太阳能电池，传感器，半导体器件和门装置等电子部件中 CMOS（互补金属氧化物半导体）具有可调功能。

6. 发明申请

WO2004069453A3 REFRACTORY METAL ANNEALING BANDS 审中-公开
标题翻译：耐火金属退火带
公开(公告)号：WO2004069453A3
公开(公告)日：2004-12-09
申请号：PCT/US2004002695
申请日：2004-01-30
申请人： STARCK H C INC , KUMAR PRABHAT , DURHAM JOHN , MALEN RICHARD R , GOLDBERG HOWARD V , UHLENHUT HENNING
发明人： KUMAR PRABHAT , DURHAM JOHN , MALEN RICHARD R , GOLDBERG HOWARD V , UHLENHUT HENNING
IPC分类号： B22F3/16 , B22F5/00 , C21D9/62 , B22F3/00 , B22F3/20 , H05B3/00
CPC分类号： B22F5/003 , B22F3/16 , B22F5/006 , B22F2005/002 , B22F2998/00 , B22F2998/10 , C21D9/52 , C21D9/62 , C22C1/045 , C22C9/00 , C22C32/0031 , B22F3/105 , B22F3/17 , B22F3/18 , B22F3/12 , B22F3/15 , B22F3/20 , B22F2003/248 , B22F2202/06 , B22F3/02 , B22F3/10 , B22F3/04 , B22F3/14 , B22F3/24 , B22F1/0003
摘要： The invention relates to a process for making an annealing band, the process comprising (a) producing a refractory metal powder; or refractory metal alloy powder; (b) optionally blending the powder with an oxide component or a carbide component; (c) consolidating the powder or powder blend and forming a consolidated powder component; (d) subjecting the consolidated powder component to thermo-mechanical treatment and forming a sheet, or tube; (e) cutting the sheet into a strip; and (f) forming an annealing band from the strip. Then invention also relates to annealing bands and processes for using annealing bands.
摘要翻译：本发明涉及制造退火带的方法，该方法包括（a）生产难熔金属粉末; 或难熔金属合金粉末; （b）任选地将粉末与氧化物组分或碳化物组分混合; （c）将粉末或粉末混合物固结并形成固结粉末组分; （d）使固结的粉末成分经受热机械处理并形成片材或管; （e）将该片切割成带; 和（f）由条形成退火带。然后本发明还涉及使用退火带的退火条带和方法。

7. 发明申请

WO02064287A3 REJUVENATION OF REFRACTORY METAL PRODUCTS 审中-公开
标题翻译：重新制造金属制品
公开(公告)号：WO02064287A3
公开(公告)日：2002-10-10
申请号：PCT/US0204306
申请日：2002-02-14
申请人： STARCK H C INC , AIMONE PAUL , KUMAR PRABHAT , JEPSON PETER R , UHLENHUT HENNING , GOLDBERG HOWARD V
发明人： AIMONE PAUL , KUMAR PRABHAT , JEPSON PETER R , UHLENHUT HENNING , GOLDBERG HOWARD V
IPC分类号： C23C14/34 , B22F3/24 , B22F7/06 , B23F7/00 , H01L21/285
CPC分类号： H01J37/3491 , B22F7/062 , B22F2007/068 , B22F2999/00 , C23C14/3414 , Y02P10/295 , B22F3/1055
摘要： Refractory metal products (12), such as tantalum on non-refractory conductive metal backings (14), e.g. copper, can be rejuvenated after metal consumption in selected zones by powder filling (28) the zones (18) and high energy heating (30) at high scan speed to sinter the added powder, without complete melting of the powder fill, thus establishing a microstructure consistent with the balance of the reclaimed product and avoiding the separation of the copper backing (14) and tantalum sputter plate (12). The rejuvenation method can be applied to non-mounted refractory metal products that are subject to non-uniform erosion, etching, chipping or other metal loss. The form of such refractory metal products can be as plate, rod, cylinder, block or other forms apart from sputter targets. The process can be applied to, for example, x-ray disks or targets (molybdenum plate on carbon backing).
摘要翻译：耐火金属制品（12），例如在非耐火导电金属背衬（14）上的钽，例如。铜可以在选定区域的金属消耗后通过以高扫描速度粉末填充（28）区域（18）和高能量加热（30）来烧结添加的粉末而不使粉末填充物完全熔化，从而建立微结构与回收产品的平衡一致，避免了铜背衬（14）和钽溅射板（12）的分离。复原方法可以应用于非均匀侵蚀，蚀刻，切屑或其他金属损失的非安装的难熔金属制品。这种难熔金属产品的形式可以是除溅射靶之外的板，棒，圆筒，块或其它形式。该方法可以应用于例如x射线盘或靶（碳背衬上的钼板）。

8. 发明申请

WO2005095263A3 METHODS OF FORMING ALPHA AND BETA TANTALUM FILMS WITH CONTROLLED AND NEW MICROSTRUCTURES 审中-公开
标题翻译：形成ALPHA和BETA TANTALUM膜与控制和新的微结构的方法
公开(公告)号：WO2005095263A3
公开(公告)日：2006-05-11
申请号：PCT/US2005009763
申请日：2005-03-24
申请人： STARCK H C INC , NARAYAN JAGDISH , KUMAR PRABHAT , WU RICHARD
发明人： NARAYAN JAGDISH , KUMAR PRABHAT , WU RICHARD
IPC分类号： B81C1/00 , C23C14/16 , C23C14/54 , C23C16/06 , C30B23/00 , C30B25/00 , C30B29/02
CPC分类号： C23C16/06 , C23C14/16 , C23C14/548
摘要： Thin tantalum films having novel microstructures are provided. The films have microstructures such as nanocrystalline, single crystal and amorphous. These films provide excellent diffusion barrier properties and are useful in microelectronic devices. Methods of forming the films using pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) deposition methods are also provided, as are microelectronic devices incorporating these films.
摘要翻译：提供具有新颖微结构的薄钽膜。这些薄膜具有微结构，例如纳米晶体，单晶和无定形。这些膜提供优异的扩散阻挡性能并且可用于微电子器件。还提供了使用脉冲激光沉积（PLD）和分子束外延（MBE）沉积方法形成膜的方法，以及包含这些膜的微电子器件也是如此。

9. 发明申请

WO03062491A2 REFRACTRORY METAL AND ALLOY REFINING BY LASER FORMING AND MELTING 审中-公开
标题翻译：通过激光成形和熔融的精炼金属和合金精炼
公开(公告)号：WO03062491A2
公开(公告)日：2003-07-31
申请号：PCT/US0301825
申请日：2003-01-22
申请人： STARCK H C INC , AIMONE PAUL R , KUMAR PRABHAT , JEPSON PETER R
发明人： AIMONE PAUL R , KUMAR PRABHAT , JEPSON PETER R
IPC分类号： B22F3/105 , B22F3/15 , C23C14/34 , C23C24/10 , C23C26/00
CPC分类号： B22F5/00 , C23C14/3414 , C23C24/10
摘要： A process to chemically refine and consolidate tantalum, niobium and their alloys to a fabricated product of net shape or near-net shape with higher throughput, more consistency, and lower manufacturing costs compared to prior art routes or rejuvenate damaged and deteriorated refractory metal parts. Powder metal is loaded into hoppers to be fed into laser forming/melting equipment. A suitable substrate is loaded into a laser forming/melting chamber onto which the powder will be deposited and consolidated in a point-scan process. As the powder is fed onto successive points of the surface of the substrate in linear traces, the laser is used to heat and partially melt the substrate and completely melt the powder. A combined deposition and melt beam traces the substrate surface repeatedly over a selected area to build up a dense coating of controlled microstructure in multiple layers. A fully dense deposit is built up that becomes the desired shape.
摘要翻译：与现有技术路线相比，将钽，铌及其合金化学改善和固结成网状或近净形状的制造产品，具有更高的生产能力，更高的一致性和更低的制造成本，或者使受损和劣化的难熔金属部件恢复活力。将粉末金属装入料斗中以供入激光成形/熔化设备。合适的基底被加载到激光成形/熔化室中，粉末将在其中沉积并在点扫描过程中固结到其上。当粉末以线性迹线供给到基底表面的连续点时，激光用于加热和部分熔化基底并完全熔化粉末。组合的沉积和熔体束在选择的区域上重复地跟踪衬底表面，以在多层中建立受控微结构的致密涂层。建立了一个完全致密的沉积物，成为所需的形状。

10. 发明申请

WO2008063774A3 TITANIUM OXIDE-BASED SPUTTERING TARGET FOR TRANSPARENT CONDUCTIVE FILM, METHOD FOR PRODUCING SUCH FILM AND COMPOSITION FOR USE THEREIN 审中-公开
标题翻译：用于透明导电膜的氧化钛基溅射靶，用于制造这种膜的方法和用于其中的组合物
公开(公告)号：WO2008063774A3
公开(公告)日：2008-08-14
申请号：PCT/US2007081074
申请日：2007-10-11
申请人： STARCK H C INC , WU RONG-CHEN RICHARD , KUMAR PRABHAT , SUN SHUWEI
发明人： WU RONG-CHEN RICHARD , KUMAR PRABHAT , SUN SHUWEI
IPC分类号： C04B35/46 , C23C14/08 , C23C14/34
CPC分类号： H01B1/08 , C04B35/46 , C04B35/645 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/404 , C04B2235/9653 , C23C14/083 , C23C14/3414
摘要： The present invention is directed to a composition consisting essentially of: a) from about 80 to about 99 moie% of TiO2, and b) from about 1 to about 20 mole % of one or more materials selected from the group consisting of i) WO2, ii) Ta2O5, iii) Nb2O5, iv) MoO2, v) Mo, vi) Ta, vii) Nb, viii) W and ix) mixtures thereof, wherein the mole %s are based on the total product and wherein the sum of components a) and b) is 100. The invention is also directed to the sintered product of such composition, a sputtering target made from the sintered product and a transparent electroconductive film made from the composition.
摘要翻译：本发明涉及一种组合物，该组合物基本上由以下成分组成：a）约80至约99摩尔％的TiO 2，和b）约1至约20摩尔％的一种或多种选自以下的材料：i）WO 2 ，ii）Ta 2 O 5，iii）Nb 2 O 5，iv）MoO 2，v）Mo，vi）Ta，vii）Nb，viii）W和ix）其混合物，其中摩尔％s基于总产物，组分a）和b）的重量百分比为100.本发明还涉及这种组合物的烧结产物，由该烧结产物制成的溅射靶和由该组合物制成的透明导电膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式