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1. 发明公开

EP2264793A4 LIGHT-EMITTING ELEMENT 有权转让
标题翻译： LICHTEMITTIERENDES元素
公开(公告)号：EP2264793A4
公开(公告)日：2015-03-18
申请号：EP09754967
申请日：2009-04-06
申请人： SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/44 , H01L33/22 , H01L33/46
CPC分类号： H01L33/44 , H01L33/04 , H01L33/12 , H01L33/22 , H01L33/46 , H01L33/58 , H01L2933/0091
摘要： Disclosed is a light emitting device. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, a first light extracting structure layer having a concave-convex structure on the passivation layer, a first electrode layer electrically connected to the first conductive semiconductor layer through the passivation layer and the first light extracting structure layer, and a second electrode layer electrically connected to the second conductive semiconductor layer through the passivation layer and the light extracting structure layer.
摘要翻译：公开了一种发光器件。发光器件包括第一导电半导体层，第一导电半导体层上的有源层，有源层上的第二导电半导体层，围绕第一导电半导体层的钝化层，有源层和第二导电半导体层层，在钝化层上具有凹凸结构的第一光提取结构层，通过钝化层和第一光提取结构层与第一导电半导体层电连接的第一电极层和电连接的第二电极层通过钝化层和光提取结构层到达第二导电半导体层。

2. 发明公开

EP2262012A4 LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 有权转让
标题翻译： HECTELLUNGSVERFAHRENDAFÜR的LICHTEMITTIERENDES ELEMENT
公开(公告)号：EP2262012A4
公开(公告)日：2014-12-31
申请号：EP09754948
申请日：2009-04-02
申请人： SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/00 , H01L33/40 , H01L33/44
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/44
摘要： A light emitting device according to the embodiment includes a support substrate; a reflective layer over the support substrate; an ohmic contact layer over the reflective layer; a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer over the ohmic contact layer; a first passivation layer surrounding a lateral side of the light emitting semiconductor layer; and a second passivation layer surrounding lateral sides of the first passivation layer and the reflective layer.
摘要翻译：根据实施例的发光器件包括支撑衬底; 在支撑衬底上的反射层; 反射层上的欧姆接触层; 包括在所述欧姆接触层上的第二导电半导体层，有源层和第一导电半导体层的发光半导体层; 围绕所述发光半导体层的侧面的第一钝化层; 以及围绕所述第一钝化层和所述反射层的横向侧面的第二钝化层。

3. 发明公开

EP2259346A4 LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 有权转让
标题翻译：发光元件及其制造方法
公开(公告)号：EP2259346A4
公开(公告)日：2014-08-20
申请号：EP09725283
申请日：2009-03-27
申请人： SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/14 , H01L33/00
CPC分类号： H01L33/14 , H01L33/0079
摘要： A light emitting element according to an exemplary embodiment includes: a support substrate; a second electrode layer formed on the support substrate; a current spreading layer formed on the support substrate; a second conductive semiconductor layer formed on the second electrode layer and the current spreading layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; and a first electrode layer formed on the first conductive semiconductor layer.
摘要翻译：根据示例性实施例的发光元件包括：支撑衬底; 形成在所述支撑基板上的第二电极层; 形成在所述支撑基板上的电流扩散层; 形成在所述第二电极层和所述电流扩展层上的第二导电半导体层; 形成在所述第二导电半导体层上的有源层; 形成在所述有源层上的第一导电半导体层; 以及形成在所述第一导电半导体层上的第一电极层。

4. 发明公开

EP2262011A4 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR SAME 有权转让
标题翻译： VERFAHREN ZU IHRER HERSTELLUNG LICHTEMITTIERENDE VORRICHTUNG
公开(公告)号：EP2262011A4
公开(公告)日：2014-01-22
申请号：EP09754930
申请日：2009-04-01
申请人： SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/00 , H01L33/08 , H01L33/38
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/0095 , H01L33/08 , H01L33/145 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括支撑衬底，支撑衬底上的反射欧姆接触层，包括由反射欧姆接触层上的工艺辅助区域划分的工艺辅助区域和欧姆接触区域的功能复合层，以及发光半导体层，包括在每个欧姆接触区域上的第二导电半导体层，有源层和第一导电半导体层。

5. 发明公开

EP2264792A4 LIGHT EMITTING DEVICE AND A FABRICATION METHOD THEREOF 有权转让
标题翻译： HERMTELLUNGSVERFAHRENDAFÜRLICHTEMITTIERENDE VORRICHTUNG
公开(公告)号：EP2264792A4
公开(公告)日：2015-03-04
申请号：EP09754966
申请日：2009-04-06
申请人： SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/44 , H01L33/38 , H01L33/40 , H01L33/46
CPC分类号： H01L33/44 , H01L33/387 , H01L33/40 , H01L33/46 , H01L2933/0091
摘要： A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a first passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer; a second connection layer electrically connected to the second conductive semiconductor layer through the first passivation layer; a first light extracting structure layer on the first passivation layer and the second connection layer; a first electrode layer electrically connected to the first conductive semiconductor layer; and a second electrode layer on the first light extracting structure layer.
摘要翻译：根据实施例的发光器件包括第一导电半导体层; 在第一导电半导体层上的有源层; 在所述有源层上的第二导电半导体层; 围绕所述第一导电半导体层，所述有源层和所述第二导电半导体层的第一钝化层; 通过所述第一钝化层与所述第二导电半导体层电连接的第二连接层; 在所述第一钝化层和所述第二连接层上的第一光提取结构层; 电连接到第一导电半导体层的第一电极层; 以及第一光提取结构层上的第二电极层。

6. 发明公开

EP2259344A4 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR SAME 有权转让
公开(公告)号：EP2259344A4
公开(公告)日：2013-09-18
申请号：EP09724259
申请日：2009-03-24
申请人： SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/00 , H01L33/14 , H01L33/58
CPC分类号： H01L33/42 , H01L33/0079 , H01L33/14 , H01L33/38 , H01L33/44 , H01L2933/0016 , H01L2933/0091
摘要： A light emitting device according to the embodiment includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a current spreading layer on the second conductive semiconductor layer, a bonding layer on the current spreading layer, and a light extracting structure on the bonding layer.

7. 发明申请

WO2009134109A3 LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：发光元件及其生产方法
公开(公告)号：WO2009134109A3
公开(公告)日：2010-02-25
申请号：PCT/KR2009002352
申请日：2009-05-04
申请人： LG INNOTEK CO LTD , SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/00 , H01L33/14 , H01L33/16 , H01L33/32
CPC分类号： H01L33/0066 , H01L33/14 , H01L33/16 , H01L33/32
摘要： According to an embodiment of this invention, a light emitting element comprises: a supporting substrate; wafer-bonding layer on the supporting substrate; a current-spreading layer on the wafer-bonding layer; a second electrically conductive semiconductor layer on the current-spreading layer; an active layer on the second electrically conductive semiconductor layer; a first electrically conductive semiconductor layer on the active layer; a surface-modification layer on the first electrically conductive semiconductor layer; and a first electrode layer on the surface-modification layer.
摘要翻译：根据本发明的实施例，发光元件包括：支撑基板; 支撑基板上的晶片接合层; 晶片接合层上的电流扩散层; 电流扩展层上的第二导电半导体层; 在第二导电半导体层上的有源层; 有源层上的第一导电半导体层; 在第一导电半导体层上的表面改性层; 和表面改性层上的第一电极层。

8. 发明申请

WO2009125983A3 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：WO2009125983A3
公开(公告)日：2010-01-21
申请号：PCT/KR2009001824
申请日：2009-04-08
申请人： SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/00 , H01L33/14
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/42
摘要： A light-emitting device disclosed in the embodiment of this invention includes: a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a current-spreading layer of the second conductive semiconductor layer, a first electrode layer on the first conductive semiconductor layer, and a second electrode layer on the current-spreading layer.
摘要翻译：本发明实施例公开的发光器件包括：第一导电半导体层，第一导电半导体层上的有源层，有源层上的第二导电半导体层，第二导电半导体的电流扩展层层，第一导电半导体层上的第一电极层和电流扩展层上的第二电极层。

9. 发明申请

WO2009145465A2 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR SAME 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：WO2009145465A2
公开(公告)日：2009-12-03
申请号：PCT/KR2009001679
申请日：2009-04-01
申请人： SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/00 , H01L33/38
CPC分类号： H01L33/60 , H01L33/0079 , H01L33/0095 , H01L33/08 , H01L33/145 , H01L33/387 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device according to an embodiment of the present invention includes a base substrate; a reflective ohmic contact layer formed on the base substrate; a functional composite layer formed on the ohmic contact layer and including a process assistant region and ohmic contact regions divided by the process assistant region; and light emitting semiconductor layers formed on the ohmic contact regions and including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer.
摘要翻译：根据本发明实施例的发光器件包括：基底; 形成在基底基板上的反射欧姆接触层; 形成在欧姆接触层上的功能性复合层，其包括由工艺助剂区划分的工艺助剂区域和欧姆接触区域; 以及形成在欧姆接触区上并包括第二导电半导体层，有源层和第一导电半导体层的发光半导体层。

10. 发明申请

WO2009136719A2 LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 审中-公开
标题翻译：发光元件及其生产方法
公开(公告)号：WO2009136719A2
公开(公告)日：2009-11-12
申请号：PCT/KR2009002354
申请日：2009-05-04
申请人： LG INNOTEK CO LTD , SONG JUNE O
发明人： SONG JUNE O
IPC分类号： H01L33/42
CPC分类号： H01L33/42 , H01L2933/0091
摘要： According to an embodiment of this invention, a light-emitting element comprises: a growth substrate; a first electrically conductive semiconductor layer on the growth substrate; an active layer on the first electrically conductive semiconductor layer; a second electrically conductive semiconductor layer on the active layer; and an ohmic contact layer formed with a welded structure on the second electrically conductive semiconductor layer.
摘要翻译：根据本发明的实施例，发光元件包括：生长衬底; 生长衬底上的第一导电半导体层; 在第一导电半导体层上的有源层; 在所述有源层上的第二导电半导体层; 以及在所述第二导电半导体层上形成有焊接结构的欧姆接触层。

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