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1. 发明申请

WO2015073591A9 METAL FOIL METALLIZATION FOR BACKPLANE-ATTACHED SOLAR CELLS AND MODULES 审中-公开
标题翻译：用于背板连接的太阳能电池和模块的金属箔金属化
公开(公告)号：WO2015073591A9
公开(公告)日：2016-04-07
申请号：PCT/US2014065312
申请日：2014-11-12
申请人： SOLEXEL INC , MOSLEHI MEHRDAD , STALCUP THOM , KRAMER KARL-JOSEF , KAPUR PAWAN , CALCATERRA ANTHONY , RANA VIRENDRA V , SEUTTER SEAN M , WINGERT MICHAEL
发明人： MOSLEHI MEHRDAD , STALCUP THOM , KRAMER KARL-JOSEF , KAPUR PAWAN , CALCATERRA ANTHONY , RANA VIRENDRA V , SEUTTER SEAN M , WINGERT MICHAEL
IPC分类号： H01L31/00
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , Y02E10/547 , Y02P70/521
摘要： A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (Ml), the Ml metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the Ml layer, the backplane sheet comprising a plurality of via holes that expose portions of the Ml layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 μm, the M2 layer electrically connected to the Ml layer through the via holes in the backplane sheet.
摘要翻译：描述了一种背接触太阳能电池，其包括半导体光吸收层; 第一级金属层（M1），位于光吸收层背面的Ml金属层，背面与被设计成接收入射光的光吸收层的前侧相反; 具有M1层的所述太阳能电池背面的电绝缘背板片，所述背板片包括多个通孔，所述多个通孔暴露在所述背板片下面的M1层的部分; 以及与背板接触的M2层，M2层由预先制备的金属箔材料制成，包括5〜50μm的厚度，M2层通过导电孔中的通孔与M1层电连接底板。

2. 发明公开

EP2856512A4 STRUCTURES AND METHODS OF FORMATION OF CONTIGUOUS AND NON-CONTIGUOUS BASE REGIONS FOR HIGH EFFICIENCY BACK-CONTACT SOLAR CELLS 无效
标题翻译：结构和方法的形成邻国的，而不是根据邻近地区对于高高效背接触太阳能电池
公开(公告)号：EP2856512A4
公开(公告)日：2015-12-16
申请号：EP13798110
申请日：2013-05-29
申请人： SOLEXEL INC , DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER DAWN , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
发明人： DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
IPC分类号： H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/068
CPC分类号： H01L31/022441 , H01L31/02167 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521

3. 发明专利

AU2013267481A1 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells 未知
公开(公告)号：AU2013267481A1
公开(公告)日：2015-01-22
申请号：AU2013267481
申请日：2013-05-29
申请人： COUTANT SOLENE , SEUTTER SEAN , KOMMERA SWAROOP , ANBALAGAN PRANAV , SOLEXEL INC , KAPUR PAWAN , RATTLE BENJAMINE , DESHAZER HEATHER , DESHPANDE ANAND , MOSLEHI MEHRDAD , RANA VIRENDRA
发明人： DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
IPC分类号： H01L31/04 , H01L31/18
摘要： Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non-nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

4. 发明申请

WO2006138103A3 METHOD FOR SILICON BASED DIELECTRIC CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：基于硅的介电化学蒸气沉积方法
公开(公告)号：WO2006138103A3
公开(公告)日：2007-08-16
申请号：PCT/US2006021787
申请日：2006-06-05
申请人： APPLIED MATERIALS INC , WANG YAXIN , MAEDA YUJI , MELE THOMAS C , SEUTTER SEAN M , TANDON SANJEEV , IYER R SURYANARAYANAN
发明人： WANG YAXIN , MAEDA YUJI , MELE THOMAS C , SEUTTER SEAN M , TANDON SANJEEV , IYER R SURYANARAYANAN
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45525 , C23C16/45553 , H01L29/6656 , H01L29/6659 , H01L29/66628 , H01L29/7834
摘要： Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film (434) on a substrate (122) includes flowing a nitrogen and carbon containing chemical into a deposition chamber (100), flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber (100), and heating the substrate (122) disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3-N.
摘要翻译：本发明的实施方案通常提供一种沉积含硅膜的方法。在一个实施例中，在衬底（122）上沉积含硅材料膜（434）的方法包括使含氮和碳的化学品流入沉积室（100），使含硅的源化学品流过硅 - 氮键进入处理室（100），并且将设置在室中的基板（122）加热至低于约550℃的温度。在另一个实施方案中，含硅化学品是三甲基胺，含氮和碳的化学品是（CH 3）3 -N。

5. 发明申请

WO2007002040A3 METHOD FOR FORMING SILICON-CONTAINING MATERIALS DURING A PHOTOEXCITATION DEPOSITION PROCESS 审中-公开
标题翻译：曝光沉积过程中形成含硅材料的方法
公开(公告)号：WO2007002040A3
公开(公告)日：2009-03-19
申请号：PCT/US2006023915
申请日：2006-06-20
申请人： APPLIED MATERIALS INC , SINGH KAUSHAL K , RANISH JOSEPH M , SEUTTER SEAN M
发明人： SINGH KAUSHAL K , RANISH JOSEPH M , SEUTTER SEAN M
IPC分类号： H01L21/318 , H01L21/469
CPC分类号： H01L21/3185 , C23C16/0227 , C23C16/345 , C23C16/45519 , C23C16/45591 , C23C16/482 , C23C16/488 , C23C16/52
摘要： Embodiments of the invention generally provide a method for depositing films using a UV source during a photoexcitation process. The films are deposited on a substrate and contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent the deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.
摘要翻译：本发明的实施方案通常提供一种在光激发过程中使用UV源沉积膜的方法。膜沉积在衬底上并且包含诸如硅（例如外延，晶体，微晶，多晶硅或非晶），氧化硅，氮化硅，氮氧化硅或其它含硅材料的材料。光致激发过程可以在沉积过程之前，期间或之后使衬底和/或气体暴露于能量束或通量。因此，光激发过程可以用于预处理或后处理衬底或材料，沉积含硅材料，并且增强室清洁过程。通过UV光激发过程增强的方法的特征包括在沉积之前去除原生氧化物，从沉积膜去除挥发物，增加沉积膜的表面能，增加前体的激发能，减少沉积时间和降低沉积温度。

6. 发明申请

WO2007044145A2 METHOD AND APPARATUS FOR THE LOW TEMPERATURE DEPOSITION OF DOPED SILICON NITRIDE FILMS 审中-公开
标题翻译：氮化硅薄膜低温沉积的方法与装置
公开(公告)号：WO2007044145A2
公开(公告)日：2007-04-19
申请号：PCT/US2006033470
申请日：2006-08-29
申请人： APPLIED MATERIALS INC , IYER R SURYANARAYANAN , SMITH JACOB W , SEUTTER SEAN M , ZHANG KANGZHAN , LAM ANDREW M , CUNNINGHAM KEVIN L , RAMACHANDRAN PHANI
发明人： IYER R SURYANARAYANAN , SMITH JACOB W , SEUTTER SEAN M , ZHANG KANGZHAN , LAM ANDREW M , CUNNINGHAM KEVIN L , RAMACHANDRAN PHANI
IPC分类号： H01L21/00
CPC分类号： C23C16/45565 , C23C16/345 , C23C16/4412 , C23C16/4557
摘要： A method and apparatus for low temperature deposition of doped silicon nitride films is disclosed. The improvements include a mechanical design for a CVD chamber that provides uniform heat distribution for low temperature processing and uniform distribution of process chemicals, and methods for depositing at least one layer comprising silicon and nitrogen on a substrate by heating a substrate, flowing a silicon containing precursor into a processing chamber having a mixing region defined by an adaptor ring and one or more blocker plates and an exhaust system, heating the adapter ring and a portion of the exhaust system, flowing one or more of a hydrogen, germanium, boron, or carbon containing precursor into the processing chamber, and optionally flowing a nitrogen containing precursor into the processing chamber.
摘要翻译：公开了一种用于低温沉积掺杂氮化硅膜的方法和装置。这些改进包括用于CVD室的机械设计，其提供用于低温处理的均匀热分布和工艺化学品的均匀分布，以及用于通过加热衬底在衬底上沉积至少一层包含硅和氮的方法，使含硅前体进入处理室，其具有由适配环和一个或多个阻断板和排气系统限定的混合区域，加热适配环和排气系统的一部分，其中一个或多个氢，锗，硼或含碳前体进入处理室，并任选地将含氮前体流入处理室。

7. 发明申请

WO2008100718A3 SUBSTRATE HEATING METHOD AND APPARATUS 审中-公开
标题翻译：基板加热方法和装置
公开(公告)号：WO2008100718A3
公开(公告)日：2008-10-23
申请号：PCT/US2008052711
申请日：2008-01-31
申请人： APPLIED MATERIALS INC , CUI ANQING , SEUTTER SEAN M , SMITH JACOB W , IYER R SURYANARAYANAN
发明人： CUI ANQING , SEUTTER SEAN M , SMITH JACOB W , IYER R SURYANARAYANAN
IPC分类号： H05B3/68 , G03F7/20 , H01L21/00 , H05B3/08
CPC分类号： H01L21/67103 , H01L21/67109 , H01L21/6875
摘要： Embodiments of substrate heating methods and apparatus are provided herein. In one embodiment, a substrate heater is provided including a heater plate having a top surface and an opposing bottom surface, a recess formed in the top surface, the recess having a feature having an upper surface for supporting a substrate, wherein the depth from a bottom surface of the recess to the upper surface of the feature is at least 5 mils. One or more pads may be disposed in the recess for supporting a substrate. The heater plate may have a thickness of about 19 mm. One or more indentations may be formed in the bottom surface of the recess for altering the rate of heat transfer to a portion of a substrate disposed above the indentation during processing. The heater plate may be utilized in a process chamber for performing heat-assisted processes.
摘要翻译：本文提供了基板加热方法和装置的实施例。在一个实施例中，提供了一种衬底加热器，其包括具有顶表面和相对底表面的加热器板，在顶表面中形成的凹部，该凹部具有用于支撑衬底的上表面的特征，其中，该凹槽的底表面至该特征的上表面至少为5密耳。一个或多个垫可以设置在凹槽中用于支撑基底。加热器板可以具有约19mm的厚度。可以在凹部的底表面中形成一个或多个凹口，用于改变在处理期间设置在压痕之上的衬底的一部分的热传递速率。加热器板可以用在用于执行热辅助工艺的处理室中。

8. 发明申请

WO2010123877A3 CVD APPARATUS FOR IMPROVED FILM THICKNESS NON-UNIFORMITY AND PARTICLE PERFORMANCE 审中-公开
标题翻译：改善薄膜厚度的CVD装置非均匀性和颗粒性能
公开(公告)号：WO2010123877A3
公开(公告)日：2011-01-20
申请号：PCT/US2010031723
申请日：2010-04-20
申请人： APPLIED MATERIALS INC , TRAN BINH , CUI ANQING , HWANG BERNARD L , NGUYEN SON T , NGUYEN ANH N , SEUTTER SEAN M , TAO XIANZHI
发明人： TRAN BINH , CUI ANQING , HWANG BERNARD L , NGUYEN SON T , NGUYEN ANH N , SEUTTER SEAN M , TAO XIANZHI
IPC分类号： H01L21/205
CPC分类号： H01L21/6719 , C23C16/4401 , C23C16/4409 , C23C16/45512 , C23C16/45561 , H01L21/68742 , H01L21/68785
摘要： Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.
摘要翻译：本发明的实施例提供了用于在衬底上沉积层（例如通过化学气相沉积（CVD））的改进的装置。本文公开的本发明的装置可以有利地促进一种或多种在给定的处理室内具有减小的膜厚度不均匀的沉积膜，改善的颗粒性能（例如，在处理室中形成的膜上的还原颗粒），室到室的性能在多个处理室之间进行匹配，以及改进的处理室可维护性。

9. 发明申请

WO2008074016A2 METHOD AND APPARATUS FOR LOW TEMPERATURE AND LOW K SIBN DEPOSITION 审中-公开
标题翻译：用于低温和低K SIBN沉积的方法和设备
公开(公告)号：WO2008074016A2
公开(公告)日：2008-06-19
申请号：PCT/US2007087473
申请日：2007-12-13
申请人： APPLIED MATERIALS INC , ZHANG KANGZHAN , SEUTTER SEAN M , GRAYSON JACOB , IYER R SURYANARAYANAN
发明人： ZHANG KANGZHAN , SEUTTER SEAN M , GRAYSON JACOB , IYER R SURYANARAYANAN
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , H01L21/0217 , H01L21/02271 , H01L21/31111 , H01L21/318 , H01L29/4966 , H01L29/6659
摘要： A method and apparatus for depositing silicon boron nitride films is provided. The apparatus comprises a chamber, a gas mixing block connected to the chamber, and separate boron-containing precursor, silicon-containing precursor, and nitrogen-containing precursor gas line systems that are connected to the gas mixing block. Methods of depositing a silicon boron nitride film in the apparatus are provided. In another aspect, a method of depositing a silicon boron nitride film includes reacting a boron-containing precursor, silicon-containing precursor, and nitrogen-containing precursor in a chamber, wherein a ratio of the flow rate of the nitrogen-containing precursor into the chamber to the flow rate of the boron-containing precursor is greater than or equal to about 10.
摘要翻译：提供了用于沉积硅氮化硼膜的方法和设备。该设备包括腔室，连接到腔室的气体混合块，以及分离的含硼前体，含硅前体和连接到气体混合块的含氮前体气体管线系统。提供了在设备中沉积氮化硅氮化硅膜的方法。另一方面，沉积硅氮化硼膜的方法包括在室中使含硼前体，含硅前体和含氮前体反应，其中含氮前体流入室与含硼前体的流速之比大于或等于约10。

10. 发明专利

AU2016200610B2 Structures and methods of formation of contiguous and non-contiguous base regions for high efficiency back-contact solar cells 未知
公开(公告)号：AU2016200610B2
公开(公告)日：2017-12-07
申请号：AU2016200610
申请日：2016-02-01
申请人： SOLEXEL INC
发明人： DESHPANDE ANAND , KAPUR PAWAN , RANA VIRENDRA V , MOSLEHI MEHRDAD M , SEUTTER SEAN M , DESHAZER HEATHER , KOMMERA SWAROOP , ANBALAGAN PRANAV , RATTLE BENJAMINE E , COUTANT SOLENE
IPC分类号： H01L31/04 , H01L31/18
摘要： Fabrication methods and structures relating to multi-level metallization of solar cells are described. In one embodiment, a back contact solar cell comprises a substrate having a substrate having a light receiving frontside surface and a backside surface for forming patterned emitter 5 and non-nested base regions. Interdigitated doped emitter and base regions are formed on a backside surface of a crystalline semiconductor substrate. A patterned electrically insulating layer stack comprising a combination of at least a doped layer and an undoped capping layer is formed on the patterned doped emitter and base regions. A contact metallization pattern is formed comprising emitter metallization electrodes contacting the emitter regions and non 10 nested base metallization electrodes contacting the base regions wherein the non-nested base metallization electrodes are allowed to go beyond the base regions to overlap at least a portion of said patterned insulator without causing electrical shunts in the solar cell.

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