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1. 发明申请

WO2006058142A3 SOI-BASED OPTICAL INTERCONNECT ARRANGEMENT 审中-公开
标题翻译：基于SOI的光学互连布置
公开(公告)号：WO2006058142A3
公开(公告)日：2006-12-07
申请号：PCT/US2005042581
申请日：2005-11-25
申请人： SIOPTICAL INC , PIEDE DAVID , DAMA BIPIN , SHASTRI KALPENDU , FANGMAN JOHN , WAGNER HARVEY , GHIRON MARGARET
发明人： PIEDE DAVID , DAMA BIPIN , SHASTRI KALPENDU , FANGMAN JOHN , WAGNER HARVEY , GHIRON MARGARET
IPC分类号： G02B6/12 , G02B6/28
CPC分类号： H04B10/801 , G02B6/43
摘要： An SOl-based optical interconnection arrangement is provided that significantly reduces the size, complexity and power consumption requires of conventional high density electrical interconnections. A group of optical modulators and wavelength division multiplexers/demultiplexers are used in association with traditional electrical signal paths to "concentrate" a large number of the electrical-pinouts onto one optical waveguide (e.g., fiber). By utilizing a number of such SOl- based signal concentration structures, an optical backplane can be formed that couples all of these concentration structures through one optical substrate and then onto a separate number of output/receiving boards. Additionally, optical gain material may be embedded within the backplane element to furmer enhance the optical signal quality. The ability to integrate the electrical and optical components within a monolithic SOl-based structure provides for die significant reduction in the overall size of the connection arrangement and, further, reduces the power consumption by about an order of magnitude.
摘要翻译：提供了一种基于SO1的光互连装置，其显着地减小了常规高密度电互连所需的尺寸，复杂性和功耗。一组光调制器和波分多路复用器/解复用器与传统的电信号路径相结合使用，以将大量的电气引线“集中”到一个光波导（例如光纤）上。通过利用多个这样的基于SO 1的信号浓度结构，可以形成光背板，其将所有这些浓度结构通过一个光学基板并且然后到单独的数量的输出/接收板。此外，光学增益材料可以嵌入在背板元件内以加强光信号质量。将电和光学部件集成在基于单片SO1的结构内的能力提供了连接装置的整体尺寸的显着降低，并进一步降低功耗大约一个数量级。

2. 发明申请

WO2005057253A3 PLANAR WAVEGUIDE OPTICAL ISOLATOR IN THIN SILICON-ON-ISOLATOR (SOI) STRUCTURE 审中-公开
标题翻译：平面波导光隔离器（SILION-ON-ISOLATOR（SOI））结构
公开(公告)号：WO2005057253A3
公开(公告)日：2006-05-18
申请号：PCT/US2004040600
申请日：2004-12-06
申请人： SIOPTICAL INC , PIEDE DAVID , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A , WAGNER HARVEY
发明人： PIEDE DAVID , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A , WAGNER HARVEY
IPC分类号： G02B20060101 , G02B6/122 , G02B6/125 , G02B6/26 , G02B6/42
CPC分类号： G02B6/1228 , G02B6/125 , G02B6/4207
摘要： A planar optical isolator is formed within the silicon surface layer of an SOI structure. A forward-directed signal is applied to an input waveguiding section of the isolator and thereafter propagates through a non-reciprocal waveguide coupling region into an output waveguide section. A rearward-directed signal enters via the output waveguide section and is thereafter coupled into the non-reciprocal waveguide structure, where the geometry of the structure functions to couple only a small amount of the reflected signal into the input waveguide section. In one embodiment, the non-reciprocal structure comprises an N-way directional coupler (with one output waveguide, one input waveguide and N-1 isolating waveguides). In another embodiment, the non-reciprocal structure comprises a waveguide expansion region including a tapered, mode-matching portion coupled to the output waveguide and an enlarged, non-mode matching portion coupled to the input waveguide such that a majority of a reflected signal will be mismatched with respect to the input waveguide section. By cascading a number of such planar SOI-based structures, increased isolation can be achieved - advantageously within a monolithic arrangement.
摘要翻译：在SOI结构的硅表面层内形成平面光隔离器。正向信号被施加到隔离器的输入波导部分，然后通过非互易波导耦合区域传播到输出波导部分中。后向信号经由输出波导部分进入，然后耦合到不可逆波导结构中，其中结构的几何结构仅将少量的反射信号耦合到输入波导部分中。在一个实施例中，非互易结构包括N路定向耦合器（具有一个输出波导，一个输入波导和N-1个隔离波导）。在另一个实施例中，不可逆结构包括波导扩展区域，其包括耦合到输出波导的锥形模式匹配部分和耦合到输入波导的放大的非模式匹配部分，使得反射信号的大部分将相对于输入波导部分不匹配。通过级联多个这种平面的基于SOI的结构，可以实现增加的隔离 - 有利地在单片布置中。

3. 发明专利

AT468610T 未知
公开(公告)号：AT468610T
公开(公告)日：2010-06-15
申请号：AT04811306
申请日：2004-11-17
申请人： SIOPTICAL INC , PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE
IPC分类号： H01L27/14 , G02B6/12 , G02B6/122 , H01L31/00 , H01L31/0224 , H01L31/0232 , H01L31/0392 , H01L31/06 , H01L31/108 , H01L31/153
摘要： A silicon-based IR photodetector is formed within a silicon-on-insulator (SOI) structure by placing a metallic strip (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer (i.e., "planar SOI layer") of the SOI structure, the planar SOI layer comprising a thickness of less than one micron. Room temperature operation of the photodetector is accomplished as a result of the relatively low dark current associated with the SOI-based structure and the ability to use a relatively small surface area silicide strip to collect the photocurrent. The planar SOI layer may be doped, and the geometry of the silicide strip may be modified, as desired, to achieve improved results over prior art silicon-based photodetectors.

6. 发明申请

WO2006116747A3 COMMON ELECTRONIC DISPERSION COMPENSATION ARRANGEMENT FOR USE WITH MULTIPLE OPTICAL COMMUNICATION CHANNELS 审中-公开
标题翻译：用于多光通信通道的通用电子分散补偿装置
公开(公告)号：WO2006116747A3
公开(公告)日：2007-11-15
申请号：PCT/US2006016463
申请日：2006-04-28
申请人： SIOPTICAL INC , DAMA BIPIN , SHASTRI KALPENDU , PIEDE DAVID
发明人： DAMA BIPIN , SHASTRI KALPENDU , PIEDE DAVID
IPC分类号： H04B10/06
CPC分类号： H04L25/0228 , H04B10/66 , H04L25/025 , H04L25/03057
摘要： An electronic dispersion compensation (EDC) arrangement for a multi-channel optical receiver utilizes a time division technique to "share" a common adaptive algorithm block between a plurality of N separate channels. The algorithm block (40) embodies a specific algorithm associated with correcting/updating tap weights for the delay lines forming the equalizing elements, and a time slot assignment element (42) is used m conjunction with the algorithm block (40) to control the access of the various channels to the algorithm block. In situations where certain channels experience a greater degree of dispersion than others the time slot assignment element (42) may be configured to allot a greater number of time slots to the affected channels.
摘要翻译：用于多通道光接收机的电子色散补偿（EDC）装置利用时分技术“共享”多个N个独立信道之间的公共自适应算法块。算法块（40）体现了与形成均衡元件的延迟线的校正/更新抽头加权相关联的特定算法，并且时隙分配元件（42）与算法块（40）结合使用以控制访问的各种通道到算法块。在某些频道经历比其他频道更大程度的色散的情况下，时隙分配元素（42）可被配置为向受影响的频道分配更多数量的时隙。

7. 发明申请

WO2005060689A3 EMI-EMC SHIELD FOR SILICON-BASED OPTICAL TRANSCEIVER 审中-公开
标题翻译：用于硅基光学收发器的EMI-EMC屏蔽
公开(公告)号：WO2005060689A3
公开(公告)日：2006-02-23
申请号：PCT/US2004042741
申请日：2004-12-17
申请人： SIOPTICAL INC , PIEDE DAVID , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
发明人： PIEDE DAVID , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
IPC分类号： G02B6/42 , G02B6/12
CPC分类号： G02B6/4277 , G02B6/42 , G02B6/4246
摘要： An SOI-based opto-electronic structure includes various electronic components disposed with their associated optical components within a single SOI layer, forming a monolithic arrangement. EMI/EMC shielding is provided by forming a metallized outer layer on the surface of an external prism coupler that interfaces with the SOI layer, the metallized layer including transparent apertures to allow an optical signal to be coupled into and out of the SOI layer. The opposing surface of the prism coupler may also be coated with a metallic material to provide additional shielding. Further, metallic shielding plates may be formed on the SOI structure itself, overlying the locations of EMI-sensitive electronics. All of these metallic layers are ultimately coupled to an external ground plane to isolate the structure and provide the necessary shielding.
摘要翻译：基于SOI的光电结构包括在单个SOI层内与其相关联的光学部件一起设置的各种电子部件，形成单片布置。通过在与SOI层相接的外部棱镜耦合器的表面上形成金属化的外层来提供EMI / EMC屏蔽，金属化层包括透明的孔，以允许光信号耦合到SOI层中。棱镜耦合器的相对表面也可以用金属材料涂覆以提供额外的屏蔽。此外，金属屏蔽板可以形成在SOI结构本身上，覆盖EMI敏感电子器件的位置。所有这些金属层最终被耦合到外部接地平面以隔离结构并提供必要的屏蔽。

8. 发明申请

WO2005079258A3 SOI-BASED PHOTONIC BANDGAP DEVICES 审中-公开
标题翻译：基于SOI的光电带宽器件
公开(公告)号：WO2005079258A3
公开(公告)日：2006-06-01
申请号：PCT/US2005004123
申请日：2005-02-09
申请人： SIOPTICAL INC , GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
IPC分类号： G02B26/00 , G02F1/00 , G02F1/025
CPC分类号： G02F1/025 , G02F2202/32
摘要： An SOI-based photonic bandgap (PBG) electro-optic device utilizes a patterned PBG structure to define a two-dimensional waveguide within an active waveguiding region of the SOI electro-optic device. The inclusion of the PBG columnar arrays within the SOI structure results in providing extremely tight lateral confinement of the optical mode within the waveguiding structure, thus significantly reducing the optical loss. By virtue of including the PBG structure, the associated electrical contacts may be placed in closer proximity to the active region without affecting the optical performance, thus increasing the switching speed of the electro-optic device. The overall device size, capacitance and resistance also reduced as a consequence of using PBGs for lateral mode confinement.
摘要翻译：基于SOI的光子带隙（PBG）电光器件利用图案化的PBG结构来在SOI电光器件的有源波导区域内限定二维波导。在SOI结构中包含PBG柱状阵列导致在波导结构内提供光学模式的非常紧密的侧向约束，从而显着减少光学损耗。通过包括PBG结构，相关联的电触点可以放置在更接近有源区域而不影响光学性能，从而增加电光器件的切换速度。由于使用PBG用于横向模式限制，整个设备尺寸，电容和电阻也减小了。

9. 发明申请

WO2005086786A3 WAFER-LEVEL OPTO-ELECTRONIC TESTING APPARATUS AND METHOD 审中-公开
标题翻译：水平光电测试装置和方法
公开(公告)号：WO2005086786A3
公开(公告)日：2006-06-22
申请号：PCT/US2005007473
申请日：2005-03-08
申请人： SIOPTICAL INC , GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , PIEDE DAVID , YANUSHEFSKI KATHERINE A
发明人： GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , PIEDE DAVID , YANUSHEFSKI KATHERINE A
IPC分类号： G01R31/26
CPC分类号： G02B6/30 , G02B6/34 , G02B2006/12107
摘要： A wafer-level testing arrangement for opto-electronic devices formed in a silicon-on-insulator (SOI) wafer structure utilizes a single opto-electronic testing element to perform both optical and electrical testing. Beam steering optics may be formed on the testing element and used to facilitate the coupling between optical probe signals and optical coupling elements (e.g., prism couplers, gratings) formed on the top surface of the SOI structure. The optical test signals are thereafter directed into optical waveguides formed in the top layer of the SOI structure. The optoelectronic testing element also comprises a plurality of electrical test pins that are positioned to contact a plurality of bondpad test sites on the opto-electronic device and perform electrical testing operations. The optical test signal results may be converted into electrical representations within the SOI structure and thus returned to the testing element as electrical signals.
摘要翻译：用于在绝缘体上硅（SOI）晶片结构中形成的光电器件的晶片级测试装置利用单个光电测试元件执行光学和电学测试。光束转向光学元件可以形成在测试元件上，并且用于促进光学探针信号与形成在SOI结构的顶表面上的光耦合元件（例如，棱镜耦合器，光栅）之间的耦合。此后，光学测试信号被引导到形成在SOI结构的顶层中的光波导中。光电测试元件还包括多个电测试引脚，其定位成接触光电器件上的多个接合焊盘测试点并进行电测试操作。光学测试信号结果可以转换为SOI结构内的电气表示，并因此作为电信号返回到测试元件。

10. 发明申请

WO2005094530A2 OPTICAL CROSSOVER IN THIN SILICON 审中-公开
标题翻译：薄硅玻璃的光学切割机
公开(公告)号：WO2005094530A2
公开(公告)日：2005-10-13
申请号：PCT/US2005009872
申请日：2005-03-24
申请人： SIOPTICAL INC , PIEDE DAVID , GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
发明人： PIEDE DAVID , GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
IPC分类号： G02B6/12 , G02B6/125
CPC分类号： G02B6/12004 , G02B6/125 , G02B2006/12061 , G02B2006/12097 , G02B2006/12104 , G02B2006/12176 , G02B2006/12195
摘要： An arrangement for providing optical crossovers between waveguides formed in an SOI-based structure utilize a patterned geometry in the SOI structure that is selected to reduce the effects of crosstalk in the area where the signals overlap. Preferably, the optical signals are fixed to propagate along orthogonal directions (or are of different wavelengths) to minimize the effects of crosstalk. The geometry of the SOI structure is patterned to include predetermined tapers and/or reflecting surfaces to direct/shape the propagating optical signals. The patterned waveguide regions within the optical crossover region may be formed to include overlying polysilicon segments to further shape the propagating beams and improve the coupling efficiency of the crossover arrangement.
摘要翻译：用于在基于SOI的结构中形成的波导之间提供光学交叉的装置利用SOI结构中的图案化几何形状，其被选择以减少信号重叠的区域中串扰的影响。优选地，光信号被固定以沿着正交方向（或不同波长）传播，以最小化串扰的影响。 SOI结构的几何形状被图案化以包括预定的锥形和/或反射表面以引导/形成传播的光学信号。光学交叉区域内的图案化波导区域可以形成为包括覆盖多晶硅段，以进一步使传播波束成形，并提高交叉布置的耦合效率。

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